Did You Know...
...that two musicians were responsible for the invention of color print film? Fascinated by photography, Leopold Godowsky and Leopold Mannes worked together to produce an easy-to-use, practical color film. They worked full time as music teachers and gave concerts while experimenting during their off hours in Mannes' kitchen. Their success earned them full-time, well-paying jobs at Kodak and their efforts resulted in Kodachrome film, which was introduced in 1935.
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| Number | Title | Issue Date |
| 7977216 | Silicon wafer and fabrication method thereof Provided is a silicon wafer including: a first denuded zone formed with a predetermined depth from a top surface of the silicon wafer; and a bulk area formed between the first denuded zone and a backside of the silicon wafer, wherein the first denuded zone is formed... | 07/12/2011 |
| 7939432 | Method of improving intrinsic gettering ability of wafer A method of improving the intrinsic gettering ability of a wafer is described. A first annealing step is performed to the wafer at a first temperature in an atmosphere containing at least one of oxygen gas and nitrogen gas. A second annealing step is performed to th... | 05/10/2011 |
| 7737005 | Method for forming Ti film and TiN film, contact structure, computer readable storing medium and computer program A cleaning process is performed on the surface of a nickel silicide film serving as an underlayer. Then, a Ti film is formed to have a film thickness of not less than 2 nm but less than 10 nm by CVD using a Ti compound gas. Then, the Ti film is nitrided. Then, a TiN... | 06/15/2010 |
| 7507642 | Vapor-phase growth method, semiconductor manufacturing method and semiconductor device manufacturing method In a vapor-phase growth method in which a silicon-germanium mixed crystal layer is deposited on a semiconductor substrate, the vapor-phase growth method comprises a first step of introducing silicon raw material gas into a reaction furnace in such a manner that a si... | 03/24/2009 |
| 7348267 | Flash memory and method of fabricating the same A method of fabricating a flash memory device produces a device that has a small cell area and yet a high coupling ratio. First, a basic structure is provided that includes a substrate, a field isolation film protruding from the substrate, and floating gates dispose... | 03/25/2008 |
| 7341775 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device Provided are a composition for forming film which can form a porous film excelling in dielectric constant, adhesiveness, uniformity of the film, mechanical strength and having low hygroscopicity; a porous film and a method for forming the film; and a high-performing... | 03/11/2008 |
| 7335564 | Method for forming device isolation layer of semiconductor device A method for forming a device isolation device of a semiconductor device is disclosed. The method includes the steps of forming a moat pattern for forming a trench on a semiconductor substrate, forming a trench by etching the semiconductor substrate to a predetermin... | 02/26/2008 |
| 7303979 | Vapor-phase growth method, semiconductor manufacturing method and semiconductor device manufacturing method In a vapor-phase growth method in which a silicon-germanium mixed crystal layer is deposited on a semiconductor substrate, the vapor-phase growth method comprises a first step of introducing silicon raw material gas into a reaction furnace in such a manner that a si... | 12/04/2007 |
| 7302982 | Label applicator and system A label applicator including a support surface having a central area and curving downwardly from the central area. A post assembly extends up from the central area such that a label having a label through-hole can be positioned in a support position generally on the... | 12/04/2007 |
| 7247252 | Method of avoiding plasma arcing during RIE etching A method for avoiding plasma arcing during a reactive ion etching (RIE) process including providing a semiconductor wafer having a process surface for depositing a dielectric insulating layer; depositing at least a portion of a dielectric insulating layer to form a ... | 07/24/2007 |
| 7242012 | Lithography device for semiconductor circuit pattern generator General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor ... | 07/10/2007 |
| 7235427 | Method for treating substrates for microelectronics and substrates obtained by said method An embodiment of a multilayer wafer according to the invention includes a base substrate, a first layer associated with the base substrate, and a second layer on the first layer on side opposite from the base substrate in an axial direction and having a lateral edge... | 06/26/2007 |
| 7229667 | Reduced moisture compositions comprising an acid gas and a matrix gas, articles of manufacture comprising said compositions, and processes for manufacturing same Compositions comprising a reactive gas and a matrix gas are disclosed, as well as articles of manufacture and methods of making the articles. The methods of manufacturing preferably employ zeolites to remove moisture from the reactive gas and from the matrix gas, an... | 06/12/2007 |
| 7226513 | Silicon wafer cleaning method This invention provides a cleaning method of silicon wafer for obtaining a silicon wafer in which micro roughness thereof under spatial frequency of 20/μm is 0.3 to 1.5 nm3 in terms of power spectrum density, by passing a process of oxidizing the silicon... | 06/05/2007 |
| 7223696 | Methods for maskless lithography General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor ... | 05/29/2007 |
| 7211513 | Process for chemical vapor desposition of a nitrogen-doped titanium oxide coating Nitrogen doped titanium oxide coatings on a hot glass substrate are prepared by providing a uniform vaporized reactant mixture containing a titanium compound, a nitrogen compound and an oxygen-containing compound, and delivering the reactant mixture to the surface o... | 05/01/2007 |
| 7211295 | Silicon dioxide film forming method Disclosed herein is a silicon dioxide film forming method including: a reaction chamber heating step of heating a reaction chamber to a predetermined temperature, the reaction chamber containing an object to be processed; a gas pretreating step of energizing a proce... | 05/01/2007 |
| 7208325 | Refreshing wafers having low-k dielectric materials A low-k dielectric layer having a composition of silicon, oxygen and carbon is removed from a wafer. The low-k dielectric layer is removed by exposing a surface of the low-k dielectric layer to an oxygen-containing gas to oxidized the surface. The oxidized surface i... | 04/24/2007 |
| 7199057 | Method of eliminating boron contamination in annealed wafer A method by which a silicon wafer is prevented from increasing boron concentration near the surface and difference in the boron concentration does not arise between the surface of the annealed wafer and the silicon bulk to eliminate boron contamination in the silico... | 04/03/2007 |
| 7193239 | Three dimensional structure integrated circuit A Three-Dimensional Structure (3DS) Memory allows for physical separation of the memory circuits and the control logic circuit onto different layers such that each layer may be separately optimized. One control logic circuit suffices for several memory circuits, red... | 03/20/2007 |
| 7176545 | Apparatus and methods for maskless pattern generation General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor ... | 02/13/2007 |
| 7166505 | Method for making a semiconductor device having a high-k gate dielectric A method for making a semiconductor device is described. That method includes forming on a substrate a dielectric layer that has a dielectric constant that is greater than the dielectric constant of silicon dioxide. The dielectric layer is modified so that it will b... | 01/23/2007 |
| 7144822 | High density plasma process for optimum film quality and electrical results A method for plasma processing of semiconductor wafers is provided that reduces plasma-induced damage to the gate dielectric while limiting damage to the wafer from particulates that flake off of the interior surfaces of the reaction chamber. Plasma conditions are m... | 12/05/2006 |
| 7138295 | Method of information processing using three dimensional integrated circuits A Three-Dimensional Structure (3DS) Memory allows for physical separation of the memory circuits and the control logic circuit onto different layers such that each layer may be separately optimized. One control logic circuit suffices for several memory circuits, red... | 11/21/2006 |
| 7098064 | Semiconductor laser device and its manufacturing method, and optical disc reproducing and recording apparatus Immediately after stacking of a barrier layer formed of GaAsP of a multiple-strain quantum well active layer 105 at a growth temperature of 650° C., a second upper guide layer 126 formed of AlGaAs is stacked. This second upper guide layer 126 i... | 08/29/2006 |
| 7087518 | Method of passivating and/or removing contaminants on a low-k dielectric/copper surface One aspect of the invention relates to a method of removing contaminants from a low-k film. The method involves forming a sacrificial layer over the contaminated film. The contaminants combine with the sacrificial layer and are removed by etching away the sacrificia... | 08/08/2006 |
| 7084505 | Porous film, composition and manufacturing method, interlayer dielectric film, and semiconductor device A porous film-forming composition comprising (A) a curable silicone resin having a Mn of at least 100, (B) a micelle-forming surfactant, and (C) a compound which generates an acid upon pyrolysis remains stable during storage. The composition is coated and heat treat... | 08/01/2006 |
| 7083680 | Sublimation and purification method A glass bottle containing a sample of an organic material to be purified is located at a position surrounded by a heater near one end in an outer glass tube. An inner glass tube for catching organic crystals obtained by recrystallization is located at a position nea... | 08/01/2006 |
| 7064072 | Method for fabricating trench isolation A semiconductor substrate having a front surface and a backside is prepared. A first silicon oxide layer is formed on the front surface of the semiconductor substrate and, simultaneously, forming a second silicon oxide layer on the backside of the semiconductor subs... | 06/20/2006 |
| 7049209 | De-fluorination of wafer surface and related structure Methods of de-fluorinating a wafer surface after damascene processing and prior to photoresist removal are disclosed, as is a related structure. In one embodiment, the method places the wafer surface in a chamber and exposes the wafer surface to a plasma from a sour... | 05/23/2006 |
| 7033938 | Method of making a long wavelength indium gallium arsenide nitride (InGaAsN) active region The active region of a long-wavelength light emitting device is made by providing an organometallic vapor phase epitaxy (OMVPE) reactor, placing a substrate wafer capable of supporting growth of indium gallium arsenide nitride in the reactor, supplying a Group IIIâ€... | 04/25/2006 |
| 7015119 | Fabrication method of semiconductor integrated circuit device A method of fabrication of a semiconductor integrated circuit device, calls for disposing, in an ultrapure water preparing system, UF equipment having therein a UF module which has been manufactured by disposing, in a body thereof, a plurality of capillary hollow fi... | 03/21/2006 |
| 7005385 | Method for removing a resist mask with high selectivity to a carbon hard mask used for semiconductor structuring The present invention relates to a method for removing a resist selective to a carbon hard mask including providing an etching plasma comprising of at least hydrogen at a predetermined temperature level and a predetermined pressure level in a reaction chamber, and e... | 02/28/2006 |
| 6962855 | Method of forming a porous material layer in a semiconductor device A material layer containing impurities that react with water molecules is formed on a substrate. The material layer is then heated under a pressure exceeding one atmosphere and in the presence of water vapor to generate pores in the material layer. The material laye... | 11/08/2005 |
| 6949478 | Oxide film forming method A method of forming an oxide film having high insularity capability is performed within an ultra clean environment, using charged particles. ... | 09/27/2005 |
| 6930393 | Composition for forming porous film, porous film and method for forming the same, interlayer insulator film, and semiconductor device The object of the invention is to provide a porous film having the dielectric constant of 2.2 or less and having practicable mechanical strength. This invention provides a porous film-forming composition comprising (A) and (B): (A)... | 08/16/2005 |
| 6921727 | Method for modifying dielectric characteristics of dielectric layers A method of treating a dielectric layer having a low dielectric constant, where the dielectric layer has been processed in a manner that causes a change in the dielectric constant of an affected region of the layer. The treatment of the affected region may comprise ... | 07/26/2005 |
| 6838395 | Method for fabricating a semiconductor crystal A method for fabricating a semiconductor crystal that has a first step for forming a semiconductor crystal layer (202) that contains carbon atoms and at least one kind of Group IV element other than carbon on a substrate (201), a second step for adding... | 01/04/2005 |
| 6830950 | Integrated method for release and passivation of MEMS structures Disclosed herein is a method of improving the adhesion of a hydrophobic self-assembled monolayer (SAM) coating to a surface of a MEMS structure, for the purpose of preventing stiction. The method comprises pretreating surfaces of the MEMS structure with a plasma gen... | 12/14/2004 |
| 6828690 | Non-uniform minority carrier lifetime distributions in high performance silicon power devices A process for heat-treating a single crystal silicon segment to influence the profile of minority carrier recombination centers in the segment. The segment has a front surface, a back surface, and a central plane between the front and back surfaces. In the process, ... | 12/07/2004 |
