Bizarre Patents
A coffin, for allowing inclination for display of a deceased person in a natural position.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8187954 | Method for manufacturing silicon single crystal wafer The present invention provides a method for manufacturing a silicon single crystal wafer, in which a silicon single crystal wafer that is fabricated based on a Czochralski method and has an entire plane in a radial direction formed of an N region is subjected to a r... | 05/29/2012 |
| 8173523 | Method of removing heavy metal in semiconductor substrate To provide a method of removing a heavy metal contained in a thinned semiconductor substrate. A method of removing a heavy metal in a semiconductor substrate of the present invention comprises: attaching, to a rear surface of the semiconductor substrate, a ma... | 05/08/2012 |
| 8143142 | Method of fabricating epi-wafer, epi-wafer fabricated by the method, and image sensor fabricated using the epi-wafer A method of fabricating an epi-wafer includes providing a wafer including boron by cutting a single crystal silicon ingot, growing an insulating layer on one surface of the wafer, performing thermal treatment of the wafer, removing the insulating layer formed on one... | 03/27/2012 |
| 8124502 | Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation A semiconductor device manufacturing method is provided, including: providing a semiconductor substrate, forming on the semiconductor substrate a layer including a semiconductor compound and a dope additive, and thereafter forming an emitter region and gettering imp... | 02/28/2012 |
| 8030184 | Epitaxial wafer and method of producing the same An epitaxial wafer comprises a silicon substrate, a gettering epitaxial film formed thereon and containing silicon and carbon, and a main silicon epitaxial film formed on the gettering epitaxial film, in which the gettering epitaxial film has a given carbon atom con... | 10/04/2011 |
| 7989321 | Semiconductor device gate structure including a gettering layer A method is provided that allows for maintaining a desired equivalent oxide thickness (EOT) by reducing the thickness of an interfacial layer in a gate structure. An interfacial layer is formed on a substrate, a gate dielectric layer such as, a high-k gate dielectri... | 08/02/2011 |
| 7972942 | Method of reducing metal impurities of upgraded metallurgical grade silicon wafer by using epitaxial silicon film Metal impurities of an upgraded metallurgical grade (UMG) silicon (Si) wafer are reduced. The UMG Si wafer having a 5N (99.999%) purity is chosen to grow a high-quality epitaxial Si thin film through atmospheric pressure chemical vapor deposition (APCVD). Through he... | 07/05/2011 |
| 7923353 | Gettering method and a wafer using the same It is shown in the invention a method for manufacturing a semiconductor wafer structure with an active layer for impurity removal, which method comprises phases of depositing a first layer on a first wafer surface for providing an active layer, an optional phase of ... | 04/12/2011 |
| 7879695 | Thin silicon wafer and method of manufacturing the same A method of manufacturing a thin silicon wafer by slicing a silicon single crystal includes: a thinning step S3 of polishing a rear surface of the silicon wafer to reduce the thickness of the silicon wafer after a device structure is formed on a front surface... | 02/01/2011 |
| 7855131 | Manufacturing method of a semiconductor device A manufacturing method of a semiconductor device comprises a process of doping conductive impurities in a silicon carbide substrate, a process of forming a cap layer on a surface of the silicon carbide substrate, a process of activating the conductive impurities dop... | 12/21/2010 |
| 7776723 | Method of manufacturing an epitaxial semiconductor substrate and method of manufacturing a semiconductor device In an example embodiment of the method of manufacturing an epitaxial semiconductor substrate, a gettering layer is grown over a semiconductor substrate. An epitaxial layer may then be formed over the gettering layer, and a semiconductor device may be formed on the e... | 08/17/2010 |
| 7737004 | Multilayer gettering structure for semiconductor device and method In one embodiment, a multi-layer extrinsic gettering structure includes plurality of polycrystalline semiconductor layers each separated by a dielectric layer. ... | 06/15/2010 |
| 7670931 | Methods for fabricating semiconductor structures with backside stress layers Methods for fabricating semiconductor structures with backside stress layers are provided. In one exemplary embodiment, the method comprises the steps of providing a semiconductor device formed on and within a front surface of a semiconductor substrate. The semicond... | 03/02/2010 |
| 7629232 | Semiconductor storage device and manufacturing method thereof A non-volatile semiconductor storage device having a high-dielectric-constant insulator and a manufacturing method thereof suitable for miniaturization are disclosed. According to one aspect of the present invention, it is provided a semiconductor storage device com... | 12/08/2009 |
| 7611971 | Method of removing residual contaminants from an environment A method of reducing the amount of halogenated materials in a halogen-containing environment. The method comprises introducing an aluminum compound into the halogen-containing environment, reacting the aluminum compound with the halogenated material to form a gaseou... | 11/03/2009 |
| 7611972 | Semiconductor devices and methods of manufacture thereof Semiconductor devices and methods of manufacture thereof are disclosed. A preferred embodiment comprises a method of forming an insulating material layer. The method includes forming a barrier layer and forming a rare earth element-containing material layer over the... | 11/03/2009 |
| 7459379 | Method for manufacturing semiconductor device When a semiconductor film is irradiated with laser light, the semiconductor film is instantaneously melted and expand locally. In order to reduce internal stress generated by this expansion, strain is locally generated in the semiconductor film. Accordingly, a varia... | 12/02/2008 |
| 7456084 | Method of using a setter having a recess in manufacturing a net-shape semiconductor wafer There is provided a method of fabricating a wafer, comprising depositing semiconductor material into a recess in a setter, moving the setter through a heating/cooling region to subject the semiconductor material to a temperature profile, and removing a wafer from th... | 11/25/2008 |
| 7452788 | Method of laser annealing using linear beam having quasi-trapezoidal energy profile for increased depth of focus A linear pulse laser beam to be applied to an illumination surface is so formed as to have, at the focus, an energy profile in the width direction which satisfies inequalities 0.5L1≦L2≦L1 and 0.5L1≦L3≦L1 where assumi... | 11/18/2008 |
| 7419886 | Thermal treatment equipment and method for heat-treating The invention provides a method for activating impurity element added to a semiconductor and performing gettering process in shirt time, and a thermal treatment equipment enabling to perform such the heat-treating. The thermal treatment equipment comprises treatment... | 09/02/2008 |
| 7416928 | Manufacturing method of semiconductor device An amorphous semiconductor film and a semiconductor film including an element selected from Group 15 of the periodic table are formed over a substrate. An island-shaped region including an island-shaped amorphous semiconductor film and an island-shaped semiconductor... | 08/26/2008 |
| 7407870 | Method for manufacturing semiconductor device The present invention is a separation method for easy separation of an allover release layer with a large area. Further, the present invention is the separating method that is not subjected to restrictions in the use of substrates, such as a kind of substrate, durin... | 08/05/2008 |
| 7393762 | Charge-free low-temperature method of forming thin film-based nanoscale materials and structures on a substrate A method of forming a nanostructure at low temperatures. A substrate that is reactive with one of atomic oxygen and nitrogen is provided. A flux of neutral atoms of at least one of nitrogen and oxygen is generated within a laser-sustained-discharge plasma source and... | 07/01/2008 |
| 7393761 | Method for fabricating a semiconductor device A method for treating a gate stack in the fabrication of a semiconductor device by providing a substrate containing a gate stack having a dielectric layer formed on the substrate and a metal-containing gate electrode layer formed on the high-k dielectric layer, form... | 07/01/2008 |
| 7364987 | Method for manufacturing semiconductor device In a method of forming a semiconductor device, a copper diffusion-prevention layer is formed underneath a substrate. Impurity regions are formed on the surface of the substrate. A copper wiring is electrically connected to the impurity regions. The copper diffusion-... | 04/29/2008 |
| 7348188 | Method for analyzing metal element on surface of wafer Various kinds of metal elements existing on the surface of a wafer are analyzed with higher sensitivity. A high concentration HF solution is dropped onto a surface of a wafer. By providing the droplets of high concentration HF solution, the native oxide film on the ... | 03/25/2008 |
| 7341930 | Systems and methods for integration of heterogeneous circuit devices A heterogeneous device comprises a substrate and a plurality of heterogeneous circuit devices defined in the substrate. In embodiments, a plurality of heterogeneous circuit devices are integrated by successively masking and ion implanting the substrate. The heteroge... | 03/11/2008 |
| 7335268 | Inorganic compound for removing polymers in semiconductor processes An inorganic compound for removing polymers after a semiconductor etching process and related methods and apparatus are disclosed. An example compound includes DIW, H2SO4, H2O2 and HF. An example method for removing polyme... | 02/26/2008 |
| 7332416 | Methods to manufacture contaminant-gettering materials in the surface of EUV optics Methods to manufacture contaminant-gettering materials in the surface of EUV optics are described herein. An optical element is patterned and a contaminant-gettering material is formed on a surface of the optical element. In one embodiment, a photoresist is deposite... | 02/19/2008 |
| 7332385 | Method of manufacturing a semiconductor device that includes gettering regions A catalytic element is added to an amorphous semiconductor film and heat treatment is conducted therefor to produce a crystalline semiconductor film with good quality, a TFT (semiconductor device) with a satisfactory characteristic is realized using the crystalline ... | 02/19/2008 |
| 7329594 | Method of manufacturing a semiconductor device An impurity of one conductivity type is ionized and accelerated by electric field before being implanted into a semiconductor layer to form a high concentration impurity region near its surface. Then the semiconductor layer is irradiated with continuous wave laser l... | 02/12/2008 |
| 7326604 | Semiconductor device and method of manufacturing the same In a semiconductor device using a crystalline semiconductor film on a substrate 106 having an insulating surface, impurities are locally implanted into an active region 102 to form a pinning region 104. The pinning region 104 suppresses t... | 02/05/2008 |
| 7316947 | Method of manufacturing a semiconductor device An object is to reduce the number of high temperature (equal to or greater than 600° C.) heat treatment process steps and achieve lower temperature (equal to or less than 600° C.) processes, and to simplify the process steps and increase throughput in a method of ... | 01/08/2008 |
| 7309865 | Electronic device having infrared sensing elements An electronic device according to the present invention includes: a cavity, which is surrounded with a cavity wall portion and which has a reduced pressure; a gettering thin film, which is arranged in the cavity and has the function of adsorbing a surrounding substa... | 12/18/2007 |
| 7306982 | Method of manufacturing a semiconductor device It is intended to achieve the reduction in number of heat treatments carried out at high temperature (at least 600° C.) and the employment of lower temperature processes (600° C. or lower), and to achieve step simplification and throughput improvemen... | 12/11/2007 |
| 7294561 | Internal gettering in SIMOX SOI silicon substrates The present invention provides methods for forming SOI wafers having internal gettering layers for sequestering metallic impurities. More particularly, in one embodiment of the invention, a plurality of sites for sequestering metallic impurities are formed in a sili... | 11/13/2007 |
| 7291523 | Method of manufacturing a semiconductor device After crystallization of a semiconductor film is performed by irradiating first laser light (energy density of 400 to 500 mJ/cm2) in an atmosphere containing oxygen, an oxide film formed by irradiating the first laser light is removed. It is next performe... | 11/06/2007 |
| 7282132 | Zinc oxide film treatment method and method of manufacturing photovoltaic device utilizing the same A film of zinc oxide electrochemically deposited from an aqueous solution is subjected to heat treatment at a temperature equal to or higher than 150° C. and equal to or lower than 400° C. in a nitrogen or inert gas atmosphere that contains oxygen, thereby obtaini... | 10/16/2007 |
| 7273788 | Ultra-thin semiconductors bonded on glass substrates A method for forming a semiconductor on insulator structure includes providing a glass substrate, providing a semiconductor wafer, and performing a bonding cut process on the semiconductor wafer and the glass substrate to provide a thin semiconductor layer bonded to... | 09/25/2007 |
| 7262428 | Strained Si/SiGe/SOI islands and processes of making same A process of making a strained silicon-on-insulator structure is disclosed. A recess is formed in a substrate to laterally isolate an active area. An undercutting etch forms a bubble recess under the active area to partially vertically isolate the active area. A the... | 08/28/2007 |
