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...that to encourage use of his new invention, the shopping cart, market owner Sylvan Goldman hired fake shoppers to push the carts around his store in Oklahoma City? Seems his customers were reluctant to give up their hand-carried baskets.
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| Number | Title | Issue Date |
| 8101507 | Semiconductor device manufacturing method and semiconductor device manufacturing apparatus There is provided a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method capable of recovering a damage of a low dielectric insulating film exposed to CO2 plasma to obtain the low dielectric insulating film in a goo... | 01/24/2012 |
| 7972941 | Method of manufacturing a semiconductor device A gate structure is formed on a substrate. An insulating interlayer is formed covering the gate structure. The substrate is heat treated while exposing a surface of the insulating interlayer to a hydrogen gas atmosphere. A silicon nitride layer is formed directly on... | 07/05/2011 |
| 7935613 | Three-dimensional silicon on oxide device isolation A silicon-on-insulator wafer (10). The SOI wafer (10) comprises a top silicon layer (6), a silicon substrate (4), and an oxide insulator layer (2) disposed across the wafer (10) and between the silicon substrate (4) a... | 05/03/2011 |
| 7897489 | Selective activation of hydrogen passivated silicon and germanium surfaces A method of selectively attaching a capping agent to an H-passivated Si or Ge surface is disclosed. The method includes providing the H-passivated Si or Ge surface, the H-passivated Si or Ge surface including a set of covalently bonded Si or Ge atoms and a set of su... | 03/01/2011 |
| 7799662 | Power semiconductor device with soft switching characteristic and manufacturing method for same After introducing oxygen into an N− type FZ wafer serving as an N− type first semiconductor layer, a P type second semiconductor layer and an anode are formed on a surface of the FZ wafer. The FZ wafer is irradiated with protons from the si... | 09/21/2010 |
| 7776722 | Manufacturing methods of semiconductor substrate, thin film transistor and semiconductor device In manufacturing an SOI substrate, in a case where a step is present in a surface to be bonded, a substrate may warp and the contact area becomes small due to the step, an SOI layer having a desired shape cannot be obtained in some cases. However, the present invent... | 08/17/2010 |
| 7704858 | Methods of forming nickel silicide layers with low carbon content A method for forming a nickel silicide layer on a MOS device with a low carbon content comprises providing a substrate within an ALD reactor and performing an ALD process cycle to form a nickel layer on the substrate, wherein the ALD process cycle comprises pulsing ... | 04/27/2010 |
| 7666762 | Method for fabricating semiconductor device A method for fabricating a semiconductor device is provided. A nickel layer is deposited on a semiconductor substrate and plasma-processed. Rapid thermal processing is performed on the plasma-processed nickel layer to form a nickel silicide layer. The portion of the... | 02/23/2010 |
| 7563697 | Method for producing SOI wafer Hydrogen gas is ion-implanted into a silicon wafer for active layer via an insulating film, and thus ion-implanted wafer is then bonded with a supporting wafer via an insulating film interposed therebetween. This bonded wafer is heated to 500° C., so that a part of... | 07/21/2009 |
| 7507641 | Method of producing bonded wafer A bonded wafer is produced by implanting ions of a light element into a wafer for active layer to a predetermined depth position to form an ion implanted layer, bonding the wafer for active layer to a wafer for support substrate directly or through an insulating fil... | 03/24/2009 |
| 7446023 | High-density plasma hydrogenation A high-density plasma hydrogenation method is provided. Generally, the method comprises: forming a silicon (Si)/oxide stack layer; plasma oxidizing the Si/oxide stack at a temperature of less than 400° C., using a high density plasma source, such as an inductively ... | 11/04/2008 |
| 7442628 | Semiconductor laser manufacturing method A method for manufacturing a semiconductor laser. As a preparative step for coating an end face of a resonator with a dielectric film, a cleavage plane of a semiconductor laminated structure that is to be the end face is subjected to a plasma cleaning to prevent a c... | 10/28/2008 |
| 7407867 | Method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrate A method for producing a semiconductor structure that includes at least one useful layer on a substrate. This method includes providing a source substrate with a zone of weakness therein that defines a relatively thick useful layer between the zone of weakness and a... | 08/05/2008 |
| 7405139 | Prevention of backside cracks in semiconductor chips or wafers using backside film or backside wet etch A method of preventing the formation of cracks on the backside of a silicon (Si) semiconductor chip or wafer during the processing thereof. Also provided is a method for inhibiting the propagation of cracks, which have already formed in the backside of a silicon chi... | 07/29/2008 |
| 7368359 | Method for manufacturing semiconductor substrate and semiconductor substrate A semiconductor substrate (100) is acquired by forming a mask with a target thickness on a major surface of a single-crystal silicon substrate, implanting oxygen ions to the major surface at a high temperature, forming a surface protection layer for blocking ... | 05/06/2008 |
| 7368369 | Method for activating P-type semiconductor layer A method for activating the P-type semiconductor layer of a semiconductor device is disclosed in this present invention. The above-mentioned method can activate the impurities in the P-type semiconductor layer of a semiconductor device by plasma. The plasma comprise... | 05/06/2008 |
| 7338883 | Process for transferring a layer of strained semiconductor material The invention relates to a process for producing an electronic structure that includes a thin layer of strained semiconductor material from a donor wafer. The donor wafer has a lattice parameter matching layer that includes an upper layer of a semiconductor material... | 03/04/2008 |
| 7332426 | Substrate processing method and fabrication process of a semiconductor device A method of fabricating a semiconductor device includes the steps of forming a via-hole in an interlayer insulation film such that a metal interconnection pattern formed underneath the interlayer insulation film is exposed at a bottom of the via-hole, forming a cond... | 02/19/2008 |
| 7328830 | Structure and method for bonding to copper interconnect structures An integrated circuit structure and a method for fabricating the structure. The method comprises forming a copper bond pad for attaching the integrated circuit to a package. Copper oxide is removed from the pad by reduction in a hydrogen ion atmosphere. For attachin... | 02/12/2008 |
| 7294563 | Semiconductor on insulator vertical transistor fabrication and doping process A process for conformally doping through the vertical and horizontal surfaces of a 3-dimensional vertical transistor in a semiconductor-on-insulator structure employs an RF oscillating torroidal plasma current to perform either conformal ion implantation, or conform... | 11/13/2007 |
| 7291542 | Semiconductor wafer and manufacturing method thereof A semiconductor wafer and its manufacturing method are provided where the current driving capability of a MOS transistor can be sufficiently enhanced. An SOI layer wafer in which an SOI layer (32) is formed has a crystal direction notch (32a | 11/06/2007 |
| 7279427 | Damage-free ashing process and system for post low-k etch A process is provided for substrate ashing following the etching of features in a low dielectric constant (low-k) layer. The low-k layer can include ultra-low-k material, or a porous low-k material. The process may be configured to remove etch byproducts while prese... | 10/09/2007 |
| 7277152 | Method for manufacturing active matrix type liquid crystal display device comprising annealing of the passivation film A TFT and a passivation film are formed on a transparent substrate and thereafter the passivation film is annealed. When measuring drain currents of a TFT at a fixed turn-on voltage (Von) and a fixed turn-off voltage (Voff), although performance of a TFT annealed (s... | 10/02/2007 |
| 7273788 | Ultra-thin semiconductors bonded on glass substrates A method for forming a semiconductor on insulator structure includes providing a glass substrate, providing a semiconductor wafer, and performing a bonding cut process on the semiconductor wafer and the glass substrate to provide a thin semiconductor layer bonded to... | 09/25/2007 |
| 7265029 | Fabrication of substrates with a useful layer of monocrystalline semiconductor material Methods for fabricating a semiconductor substrate. In an embodiment, the technique includes providing an intermediate support, providing a nucleation layer, and providing at least one bonding layer between the intermediate support and the nucleation layer to improve... | 09/04/2007 |
| 7262428 | Strained Si/SiGe/SOI islands and processes of making same A process of making a strained silicon-on-insulator structure is disclosed. A recess is formed in a substrate to laterally isolate an active area. An undercutting etch forms a bubble recess under the active area to partially vertically isolate the active area. A the... | 08/28/2007 |
| 7256087 | Techniques for improving negative bias temperature instability (NBTI) lifetime of field effect transistors In one embodiment, an integrated circuit includes a PMOS transistor having a gate stack comprising a P+ doped gate polysilicon layer and a nitrided gate oxide (NGOX) layer. The NGOX layer may be over a silicon substrate. The integrated circuit further includes an in... | 08/14/2007 |
| 7256111 | Pretreatment for electroless deposition Embodiments of the present invention relate to an apparatus and method of annealing substrates in a thermal anneal chamber and/or a plasma anneal chamber before electroless deposition thereover. In one embodiment, annealing in a thermal anneal chamber includes heati... | 08/14/2007 |
| 7253069 | Method for manufacturing silicon-on-insulator wafer A method for manufacturing a SOI wafer includes a step of heat-treating a wafer in a furnace to form an SOI wafer including a silicon support, an insulating layer containing oxide, and a superficial silicon layer arranged in that order and a step of unloading the SO... | 08/07/2007 |
| 7241670 | Method to form relaxed SiGe layer with high Ge content using co-implantation of silicon with boron or helium and hydrogen A method of forming a relaxed SiGe layer having a high germanium content in a semiconductor device includes preparing a silicon substrate; depositing a strained SiGe layer; implanting ions into the strained SiGe layer, wherein the ions include silicon ions and ions ... | 07/10/2007 |
| 7238973 | Semiconductor member, manufacturing method thereof, and semiconductor device An SiGe layer is grown on a silicon substrate. The SiGe layer or the silicon substrate and SiGe layer are porosified by anodizing the SiGe layer to form a strain induction porous layer or a porous silicon layer and strain induction porous layer. An SiGe layer and st... | 07/03/2007 |
| 7235427 | Method for treating substrates for microelectronics and substrates obtained by said method An embodiment of a multilayer wafer according to the invention includes a base substrate, a first layer associated with the base substrate, and a second layer on the first layer on side opposite from the base substrate in an axial direction and having a lateral edge... | 06/26/2007 |
| 7229891 | Fabrication method for silicon-on defect layer in field-effect and bipolar transistor devices Semiconductor devices have device regions in which semiconductor properties such as spreading resistivity and its profile are significant. In making a p-type device region on a semiconductor wafer, an initial semiconductor device region is defined by a buried region... | 06/12/2007 |
| 7226848 | Substrate treating method and production method for semiconductor device A method of hydrogen sintering a substrate including a semiconductor device formed thereon comprises the steps of exciting a processing gas comprising a noble gas and a hydrogen gas to form a plasma comprising hydrogen radicals and hydrogen ions, and exposing the su... | 06/05/2007 |
| 7220677 | WAT process to avoid wiring defects A method for forming a multi-level semiconductor device to eliminate conductive interconnect protrusions following a WAT test, the method including forming a first metallization layer; carrying out a wafer acceptance testing (WAT) process; and, then carrying out a c... | 05/22/2007 |
| 7220671 | Organometallic precursors for the chemical phase deposition of metal films in interconnect applications Chemical phase deposition processes utilizing organometallic precursors to form thin films are herein described. The organometallic precursors may include a single metal center or multiple metal centers. The chemical phase deposition may be chemical vapor deposition... | 05/22/2007 |
| 7202124 | Strained gettering layers for semiconductor processes A method and structure for forming semiconductor structures using tensilely strained gettering layers. The method includes forming a donor wafer comprising a tensilely strained gettering layer disposed over a substrate, and at least one material layer disposed over ... | 04/10/2007 |
| 7199057 | Method of eliminating boron contamination in annealed wafer A method by which a silicon wafer is prevented from increasing boron concentration near the surface and difference in the boron concentration does not arise between the surface of the annealed wafer and the silicon bulk to eliminate boron contamination in the silico... | 04/03/2007 |
| 7192851 | Semiconductor laser manufacturing method A method for manufacturing a semiconductor laser. As a preparative step for coating an end face of a resonator with a dielectric film, a cleavage plane of a semiconductor laminated structure that is to be the end face is subjected to a plasma cleaning to prevent a c... | 03/20/2007 |
| 7186647 | Method for fabricating semiconductor device having landing plug contact structure The present invention relates to a method for fabricating a semiconductor device with a landing plug contact structure. The method includes the steps of: forming a plurality of gate structures on a substrate; sequentially forming a first spacer and a second spacer o... | 03/06/2007 |
