Did You Know...
...that a workman who left the soap mixing machine on too long was responsible for making Ivory Soap? He was so embarrassed by his mistake that he threw the mess in a stream. Imagine his dismay when the evidence of his error floated to the surface! Result: Ivory soap, the soap that floats.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8101506 | Method for producing a buried n-doped semiconductor zone in a semiconductor body and semiconductor component A method for producing a buried n-doped semiconductor zone in a semiconductor body. In one embodiment, the method includes producing an oxygen concentration at least in the region to be doped in the semiconductor body. The semiconductor body is irradiated via one si... | 01/24/2012 |
| 7998841 | Method for dehydrogenation treatment and method for forming crystalline silicon film A dehydrogenation treatment method which includes forming a hydrogenated amorphous silicon film above a non-heat-resistant substrate, and eliminating bonded hydrogen from the hydrogenated amorphous silicon film by irradiating an atmospheric thermal plasma discharge ... | 08/16/2011 |
| 7879694 | System and method for applying a pre-gate plasma etch in a semiconductor device manufacturing process A system and method is described for applying a pre-gate plasma etch in a semiconductor device manufacturing process in order to increase the integrity of a subsequently grown gate oxide layer. During the manufacture of a semiconductor device a sacrificial oxide lay... | 02/01/2011 |
| 7833882 | Method of producing a semiconductor device by forming an oxide film on a resin layer A method of producing a semiconductor device, including: a first plasma processing step of processing a surface of a resin layer laid on a semiconductor element and containing silicon, with a first plasma generated from a gas containing oxygen and fluorine, thereby ... | 11/16/2010 |
| 7799661 | Electrical sensor for real-time feedback control of plasma nitridation A device (101) for controlling the treatment of a substrate (102) with a plasma (103) is provided which comprises (a) a plasma chamber (104) adapted to generate a plasma (103); (b) a sensor (113) equipped with first (115 | 09/21/2010 |
| 7732304 | Method of manufacturing semiconductor device A method of manufacturing a semiconductor device according to embodiments includes forming an interlayer dielectric film with a damascene pattern over a semiconductor substrate having a lower metal wire. A seed layer may be formed over the interlayer dielectric film... | 06/08/2010 |
| 7538012 | Fluorine-containing carbon film forming method The present invention is made to solve a problem to improve adhesion between a fluorine-containing carbon film and a foundation film. In order to achieve this object, according to the present invention, a fluorine-containing carbon film forming method of forming a f... | 05/26/2009 |
| 7498242 | Plasma pre-treating surfaces for atomic layer deposition Method and structures are provided for conformal lining of dual damascene structures in integrated circuits. Preferred embodiments are directed to providing conformal lining over openings formed in porous materials. Trenches are formed in, preferably, insulating lay... | 03/03/2009 |
| 7485551 | Semiconductor-on-insulator type heterostructure and method of fabrication The present invention relates to a method of fabricating a semiconductor-on-insulator-type heterostructure that includes at least one insulating layer interposed between a receiver substrate of semiconductor material and an active layer derived from a donor substrat... | 02/03/2009 |
| 7442592 | Manufacturing a semiconductor device A technique of reducing fluctuation between elements is provided in which a semiconductor film having a crystal structure is obtained by using a metal element that accelerates crystallization of a semiconductor film and then the metal element remaining in the film i... | 10/28/2008 |
| 7442992 | Bonded SOI substrate, and method for manufacturing the same This bonded SOI substrate includes: an SOI layer having a low density impurity layer in which dopants are present at low density and a high density impurity layer in which dopants are present at high density; a wafer for a support substrate which supports said SOI l... | 10/28/2008 |
| 7442628 | Semiconductor laser manufacturing method A method for manufacturing a semiconductor laser. As a preparative step for coating an end face of a resonator with a dielectric film, a cleavage plane of a semiconductor laminated structure that is to be the end face is subjected to a plasma cleaning to prevent a c... | 10/28/2008 |
| 7374978 | Method of manufacturing semiconductor device A mask is formed selectively on a crystalline silicon film containing a catalyst element, and an amorphous silicon film is formed so as to cover the mask. Phosphorus is implanted into the amorphous silicon film and the portion of the crystalline silicon film which i... | 05/20/2008 |
| 7367196 | Spinning cold plasma apparatus and methods relating thereto Disclosed herein is an apparatus for generating a spinning cold plasma. A preferred embodiment of the spinning cold plasma apparatus is portable and includes a vortex tube having an inner wall to form a vortex reaction chamber. The vortex tube preferably has a cold ... | 05/06/2008 |
| 7342290 | Semiconductor metal contamination reduction for ultra-thin gate dielectrics A bilayer dielectric structure for substantially reducing or eliminating metal contaminants formed during subsequent polysilicon deposition is provided. The bilayer dielectric structure includes an upper surface region that is rich in chlorine located atop a bottom ... | 03/11/2008 |
| 7291568 | Method for fabricating a nitrided silicon-oxide gate dielectric A method of fabricating a gate dielectric layer, including: providing a substrate; forming a silicon dioxide layer on a top surface of the substrate; performing a plasma nitridation in a reducing atmosphere to convert the silicon dioxide layer into a silicon oxynitr... | 11/06/2007 |
| 7288458 | SOI active layer with different surface orientation A wafer having an SOI configuration and active regions having different surface orientations for different channel type transistors. In one example, semiconductor structures having a first surface orientation are formed on a donor wafer. Semiconductor structures hav... | 10/30/2007 |
| 7288488 | Method for resist strip in presence of regular low k and/or porous low k dielectric materials A two-step process is disclosed for stripping photoresist material from a substrate, wherein the substrate includes a low k dielectric material underlying the photoresist material and a polymer film overlying both the photoresist material and the low k dielectric ma... | 10/30/2007 |
| 7262500 | Interconnection structure In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a diff... | 08/28/2007 |
| 7259036 | Methods of forming doped and un-doped strained semiconductor materials and semiconductor films by gas-cluster-ion-beam irradiation and materials and film products Methods and apparatus are described for irradiating one or more substrate surfaces with accelerated gas clusters including strain-inducing atoms for blanket and/or localized introduction of such atoms into semiconductor substrates, with additional, optional introduc... | 08/21/2007 |
| 7256111 | Pretreatment for electroless deposition Embodiments of the present invention relate to an apparatus and method of annealing substrates in a thermal anneal chamber and/or a plasma anneal chamber before electroless deposition thereover. In one embodiment, annealing in a thermal anneal chamber includes heati... | 08/14/2007 |
| 7238604 | Forming thin hard mask over air gap or porous dielectric A thin hard mask is formed over a semiconductor substrate. The thin hard mask allows diffusion of a sacrificial material or pore-forming agent therethrough to form an underlying air gap or porous dielectric region. The thin hard mask may be a polymer or an initially... | 07/03/2007 |
| 7235427 | Method for treating substrates for microelectronics and substrates obtained by said method An embodiment of a multilayer wafer according to the invention includes a base substrate, a first layer associated with the base substrate, and a second layer on the first layer on side opposite from the base substrate in an axial direction and having a lateral edge... | 06/26/2007 |
| 7223621 | Method of fabricating an array substrate An array substrate for use in an X-ray sensing device and in an LCD device is fabricated using plasma gas treatment. Especially, an indium-tin-oxide (ITO) transparent conductive metallic layer is plasma-treated by N2 plasma, He plasma or Ar plasma, before... | 05/29/2007 |
| 7220668 | Method of patterning a porous dielectric material A method of patterning a porous dielectric material that includes an ash process to treat the porous dielectric material. The treated porous dielectric material allows for the formation of a substantially continuous barrier layer, which can inhibit diffusion of, for... | 05/22/2007 |
| 7208418 | Sealing sidewall pores in low-k dielectrics Barrier metal layer discontinuities or gaps due to low-k dielectric porosity is reduced by sealing sidewall porosity before barrier metal layer deposition. Embodiments include sealing sidewall porosity by depositing a swelling agent, adhesion promoter or an addition... | 04/24/2007 |
| 7202124 | Strained gettering layers for semiconductor processes A method and structure for forming semiconductor structures using tensilely strained gettering layers. The method includes forming a donor wafer comprising a tensilely strained gettering layer disposed over a substrate, and at least one material layer disposed over ... | 04/10/2007 |
| 7199048 | Method for preventing metalorganic precursor penetration into porous dielectrics Methods and structures are provided for conformal lining of dual damascene structures in semiconductor devices that contain porous or low k dielectrics. Features, such as trenches and contact vias are formed in the dielectrics. The features are subjected to low-powe... | 04/03/2007 |
| 7192851 | Semiconductor laser manufacturing method A method for manufacturing a semiconductor laser. As a preparative step for coating an end face of a resonator with a dielectric film, a cleavage plane of a semiconductor laminated structure that is to be the end face is subjected to a plasma cleaning to prevent a c... | 03/20/2007 |
| 7189661 | Method of forming silicon oxynitride layer in semiconductor device and apparatus of forming the same There are provided a method and an apparatus of forming an insulating layer including silicon oxynitride. The method includes performing a plasma treatment process for supplying a plasma reaction gas to a substrate to be treated after completing the annealing proces... | 03/13/2007 |
| 7187057 | Nitrogen controlled growth of dislocation loop in stress enhanced transistor Known techniques to improve metal-oxide-semiconductor field effect transistor (MOSFET) performance is to add a high stress dielectric layer to the MOSFET. The high stress dielectric layer introduces stress in the MOSFET that causes electron mobility drive current to... | 03/06/2007 |
| 7186597 | Method of manufacturing transistors A mask is formed selectively on a crystalline silicon film containing a catalyst element, and an amorphous silicon film is formed so as to cover the mask. Phosphorus is implanted into the amorphous silicon film and the portion of the crystalline silicon film which i... | 03/06/2007 |
| 7186652 | Method for preventing Cu contamination and oxidation in semiconductor device manufacturing A method for reducing or preventing contamination or oxidation of copper surfaces included in semiconductor process wafers including providing a semiconductor wafer including copper features having newly formed process surfaces following a semiconductor manufacturin... | 03/06/2007 |
| 7183197 | Water-barrier performance of an encapsulating film A method and apparatus for depositing a material layer onto a substrate is described. The method includes delivering a mixture of precursors for the material layer into a process chamber and depositing the material layer on the substrate at low temperature. The mate... | 02/27/2007 |
| 7176094 | Ultra-thin gate oxide through post decoupled plasma nitridation anneal DPN (decoupled plasma nitridation) is used to improve robustness of ultra thin gate oxides. Conventionally, this is followed by an anneal in pure helium to remove structural defects in the oxide. However, annealing under these conditions has been found to cause a de... | 02/13/2007 |
| 7176141 | Plasma treatment to improve barrier layer performance over porous low-K insulating dielectrics A method for plasma treating an etched opening formed in a porous low-K material to improve barrier layer integrity including providing a substrate comprising an etched opening formed in an insulating dielectric layer including porous low-K silicon oxide according t... | 02/13/2007 |
| 7166505 | Method for making a semiconductor device having a high-k gate dielectric A method for making a semiconductor device is described. That method includes forming on a substrate a dielectric layer that has a dielectric constant that is greater than the dielectric constant of silicon dioxide. The dielectric layer is modified so that it will b... | 01/23/2007 |
| 7157387 | Techniques to create low K ILD for BEOL One aspect of the present subject matter relates to a method for forming an interlayer dielectric (ILD). In various embodiments of the method, an insulator layer is formed, at least one trench is formed in the insulator layer, and a metal layer is formed in the at l... | 01/02/2007 |
| 7154147 | Electro-optical device and driving method for the same A grey tone display and a driving method are described. The display comprises a light influencing layer, an electrode pad located adjacent to the layer at one side of the layer in order to define a pixel in the layer, an n-channel field effect transistors connected ... | 12/26/2006 |
| 7144829 | Method for fabricating semiconductor device and semiconductor substrate A first thermal treatment, which is performed at a temperature within 650–750° C. for 30–240 minutes, and thereafter a second thermal treatment, which is performed at a temperature within 900–1100° C. for 30–120 minutes, are performed as the initial therma... | 12/05/2006 |
