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| Number | Title | Issue Date |
| 8138066 | Dislocation engineering using a scanned laser A method for generating patterned strained regions in a semiconductor device is provided. The method includes directing a light-emitting beam locally onto a surface portion of a semiconductor body; and manipulating a plurality of dislocations located proximate to th... | 03/20/2012 |
| 8124501 | Method of producing semiconductor wafer A semiconductor wafer is produced by irradiating a laser beam to either face of a semiconductor wafer so as to fit a focusing position into a given depth position of the semiconductor wafer to generate a multiphoton absorption process only in a specific portion of t... | 02/28/2012 |
| 8058153 | Method for recovering damage of low dielectric insulating film for manufacturing semiconductor device There is provided a damage recovery method capable of recovering electrical characteristics of a low dielectric insulating film sufficiently while suppressing oxidation of buried metal and generation of pattern defaults. A damaged functional group generated i... | 11/15/2011 |
| 8030183 | Method for reducing crystal defect of SIMOX wafer and SIMOX wafer The method includes: a first step of colliding ions implanted from a surface of a SIMOX wafer into a silicon layer underneath a BOX layer against crystal defects to destroy the crystal defects; and a second step of heating the wafer obtained in the first step to rec... | 10/04/2011 |
| 7951692 | Method of producing semiconductor substrate having an SOI structure There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having an oxide film of a thickness thinner than the conventional one, wherein hydrogen ions are implanted into a wafer for active layer having... | 05/31/2011 |
| 7879693 | Thermal treatment equipment and method for heat-treating The invention provides a method for activating impurity element added to a semiconductor and performing gettering process in shirt time, and a thermal treatment equipment enabling to perform such the heat-treating. The thermal treatment equipment comprises treatment... | 02/01/2011 |
| 7871904 | Wafer processing method for improving gettering capabilities of wafers made therefrom A wafer processing method for improving gettering capabilities of wafers made therefrom is presented. The method includes the steps of preparing, annealing and ion-implanting. The preparing step involves preparing the wafer from a silicon ingot. The annealing step i... | 01/18/2011 |
| 7858501 | Semiconductor wafer for semiconductor components and production method A semiconductor wafer for semiconductor components and to a method for its production is disclosed. In one embodiment, the semiconductor wafer includes a front side with an adjoining near-surface active zone as basic material for semiconductor component structures. ... | 12/28/2010 |
| 7799660 | Method for manufacturing SOI substrate The present invention provides a method for manufacturing an SOI substrate by which an oxygen ion is implanted from at least one of main surfaces of a single-crystal silicon substrate to form an oxygen-ion-implanted layer and then an oxide film-forming heat treatmen... | 09/21/2010 |
| 7795117 | Method of producing semiconductor substrate having an SOI structure There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having an oxide film of a thickness thinner than the conventional one, wherein hydrogen ions are implanted into a wafer for active layer having... | 09/14/2010 |
| 7772094 | Implant damage of layer for easy removal and reduced silicon recess A method for semiconductor processing is provided, wherein a removal of one or more layers is aided by structurally weakening the one or more layers via ion implantation. A semiconductor substrate is provided having one or more primary layers formed thereon, and a s... | 08/10/2010 |
| 7749871 | Method for depositing nanolaminate thin films on sensitive surfaces The present method provides tools for growing conformal metal nitride, metal carbide and metal thin films, and nanolaminate structures incorporating these films, from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is redu... | 07/06/2010 |
| 7732303 | Method for recycling of ion implantation monitor wafers A method of recycling monitor wafers. The method includes: (a) providing a semiconductor wafer which includes a dopant layer extending from a top surface of the wafer into the wafer a distance less than a thickness of the wafer, the dopant layer containing dopant sp... | 06/08/2010 |
| 7727863 | Sonic irradiation during wafer immersion Sonic radiation is applied to a wafer portion of the planar surface of a rotating, tilted wafer as it is being immersed into a liquid treatment bath. The portion includes the leading outer edge region of the wafer. The area of the wafer portion is significantly less... | 06/01/2010 |
| 7666761 | Semiconductor device and manufacturing method thereof In manufacturing a semiconductor device, the first gettering layer is formed on the backside of a wafer, and the second gettering layers are then formed on the backside and side surfaces of a chip, allowing these gettering layers to serve as trapping sites against m... | 02/23/2010 |
| 7645687 | Method to fabricate variable work function gates for FUSI devices An embodiment of fabrication of a variable work function gates in a FUSI device is described. The embodiment uses a work function doping implant to dope the polysilicon to achieve a desired work function. Selective epitaxy growth (SEG) is used to form silicon over t... | 01/12/2010 |
| 7618879 | Non-uniform minority carrier lifetime distributions in high performance silicon power devices This invention is directed to a process for heat-treating a single crystal silicon segment to influence the profile of minority carrier recombination centers in the segment. The segment is subjected to a heat-treatment to form crystal lattice vacancies, the vacancie... | 11/17/2009 |
| 7611970 | Wafer processing method A water processing method for providing a gettering sink effect to a wafer having a plurality of streets which are formed in a lattice pattern on the front surface of a substrate and devices which are formed in a plurality of areas sectioned by the plurality of stre... | 11/03/2009 |
| 7560363 | Manufacturing method for SIMOX substrate A manufacturing method for a SIMOX substrate for obtaining a SIMOX substrate by subjecting a silicon substrate having oxygen ions implanted thereinto by heat treatment at 1300 to 1350° C. in an atmosphere of a gas mixture of argon and oxygen, the method includes: p... | 07/14/2009 |
| 7501330 | Methods of forming a high conductivity diamond film and structures formed thereby A method of forming a high thermal conductivity diamond film and its associated structures comprising selectively nucleating a region of a substrate, and forming a diamond film on the substrate such that the diamond film has large grains, which are at least about 20... | 03/10/2009 |
| 7488670 | Direct channel stress An embodiment of the invention provides a semiconductor fabrication method. The method comprises forming a strained channel region in semiconductor devices. Embodiments include forming a stressor layer over an amorphous portion of the semiconductor device at an inte... | 02/10/2009 |
| 7476597 | Methods and systems for laser assisted wirebonding The invention provides methods and systems for laser assisted wirebonding. One or more conditioning laser pulses are used to prepare a bonding surface for wirebonding by removing impurities such as residues from manufacturing processes, oxides, or irregularities on ... | 01/13/2009 |
| 7473620 | Process for adjusting the strain on the surface or inside a substrate made of a semiconductor material This invention relates to a process for adjusting the strain in a strained layer on a substrate. The process steps include identifying one or more regions of the strained layer wherein the strain is to be adjusted; implanting elements into at least one of the region... | 01/06/2009 |
| 7419886 | Thermal treatment equipment and method for heat-treating The invention provides a method for activating impurity element added to a semiconductor and performing gettering process in shirt time, and a thermal treatment equipment enabling to perform such the heat-treating. The thermal treatment equipment comprises treatment... | 09/02/2008 |
| 7407867 | Method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrate A method for producing a semiconductor structure that includes at least one useful layer on a substrate. This method includes providing a source substrate with a zone of weakness therein that defines a relatively thick useful layer between the zone of weakness and a... | 08/05/2008 |
| 7407871 | Method for passivation of plasma etch defects in DRAM devices A process for fabricating an MOS device specifically a DRAM device, featuring passivation of defects in regions of a semiconductor substrate wherein defects left unpassivated can deleteriously influence data retention time, has been developed. A high density plasma ... | 08/05/2008 |
| 7402487 | Process for fabricating a semiconductor device having deep trench structures A process for fabricating a semiconductor device having deep trench structures includes forming a first portion of the trench in a semiconductor substrate and a second portion of the trench in a selectively-formed upper layer. After etching the substrate to form the... | 07/22/2008 |
| 7393761 | Method for fabricating a semiconductor device A method for treating a gate stack in the fabrication of a semiconductor device by providing a substrate containing a gate stack having a dielectric layer formed on the substrate and a metal-containing gate electrode layer formed on the high-k dielectric layer, form... | 07/01/2008 |
| 7365000 | Method for fabricating semiconductor device Disclosed is a method for fabricating a semiconductor device capable of preventing an inter-layer insulation layer from being damaged during a wet cleaning process due to a density difference created by reliance on a thickness of a SOG layer subjected to a curing pr... | 04/29/2008 |
| 7358147 | Process for producing SOI wafer There is provided a process for producing an SOI wafer in which, when producing an SOI wafer using Smart Cut technology, the surface can be smoothed after cleaving, the thickness of the SOI layer can be reduced, and the film thickness of the SOI wafer can be made un... | 04/15/2008 |
| 7358162 | Method of manufacturing semiconductor device A method of manufacturing a semiconductor device, includes the steps of: raising a temperature of a sapphire substrate which is included in the semiconductor device from a room temperature to a preheat temperature of 150° C. to 450° C. and keeping the preheat temp... | 04/15/2008 |
| 7347228 | Method of making semiconductor devices A method for fabricating semiconductor device is provided. A high stress layer formed on, under or on both sides of the transistors of the semiconductor device is employed as a cap layer. A specific region is then defined through photo resistor mask, and the stress ... | 03/25/2008 |
| 7341927 | Wafer bonded epitaxial templates for silicon heterostructures A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed... | 03/11/2008 |
| 7329583 | Method of fabricating isolated semiconductor devices in epi-less substrate An structure for electrically isolating a semiconductor device is formed by implanting dopant into a semiconductor substrate that does not include an epitaxial layer. Following the implant the structure is exposed to a very limited thermal budget so that dopant does... | 02/12/2008 |
| 7329590 | Method for depositing nanolaminate thin films on sensitive surfaces The present method provides tools for growing conformal metal nitride, metal carbide and metal thin films, and nanolaminate structures incorporating these films, from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is redu... | 02/12/2008 |
| 7326977 | Low noise field effect transistor An FET (field effect transistor) having source, drain and channel regions of a conductivity type in a semiconductor body of opposite conductivity type. The channel region is located at the lower extremity of the source and drain regions so as to be spaced from the s... | 02/05/2008 |
| 7316745 | High-resistance silicon wafer and process for producing the same A high-resistance silicon wafer is manufactured, in which a gettering ability and economical efficiency is excellent and an oxygen thermal donor is effectively prevented from being generated in a heat treatment for forming a circuit, which is to be implemented on th... | 01/08/2008 |
| 7316947 | Method of manufacturing a semiconductor device An object is to reduce the number of high temperature (equal to or greater than 600° C.) heat treatment process steps and achieve lower temperature (equal to or less than 600° C.) processes, and to simplify the process steps and increase throughput in a method of ... | 01/08/2008 |
| 7312153 | Treatment of semiconductor wafers A method is described for treating a wafer having at least a surface layer of semiconductor material, with the surface of this surface layer having undergone a chemical-mechanical polishing step followed by an RCA cleaning step. After the polishing step and prior to... | 12/25/2007 |
| 7294561 | Internal gettering in SIMOX SOI silicon substrates The present invention provides methods for forming SOI wafers having internal gettering layers for sequestering metallic impurities. More particularly, in one embodiment of the invention, a plurality of sites for sequestering metallic impurities are formed in a sili... | 11/13/2007 |
