Class 438/472 - By vibrating or impacting

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Process wherein a step of vibrating the semiconductive substrate
No. of patents: 37
Last issue date: 05/17/2011

Number	Title	Issue Date
7943491	Pattern transfer printing by kinetic control of adhesion to an elastomeric stamp The present invention provides methods, systems and system components for transferring, assembling and integrating features and arrays of features having selected nanosized and/or microsized physical dimensions, shapes and spatial orientations. Methods of the presen...	05/17/2011
7790579	Semiconductor storage device, semiconductor device, and manufacturing method therefor According to the present invention, a gettering layer is deposited both on the side surfaces and the bottom surface of a semiconductor chip. The semiconductor chip is then mounted on the board of a package so that a Schottky barrier is formed on the bottom surface. ...	09/07/2010
7674692	Nitride semiconductor light-emitting device and fabrication method thereof Provided is a method of fabricating a nitride semiconductor light-emitting device comprising; providing a nitride semiconductor light-emitting device with a GaN layer, bringing the nitride semiconductor light-emitting device into contact with hydrogen separation met...	03/09/2010
7622367	Methods and devices for fabricating and assembling printable semiconductor elements The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide rang...	11/24/2009
7329598	Method of manufacturing a semiconductor device A method of manufacturing a semiconductor device has: preparing a semiconductor wafer having electrode pads formed on the main surface; forming contact portions, which connect to the electrode pads, on the main surface; forming a sealing resin over the main surface;...	02/12/2008
7166505	Method for making a semiconductor device having a high-k gate dielectric A method for making a semiconductor device is described. That method includes forming on a substrate a dielectric layer that has a dielectric constant that is greater than the dielectric constant of silicon dioxide. The dielectric layer is modified so that it will b...	01/23/2007
7153760	Using acoustic energy including two lasers to activate implanted species Acoustic energy may be utilized to generate phonons for activating implanted species. As a result, greater activation may be achieved with lower thermal budgets. Higher temperatures utilized in conventional processes may result in damage to semiconductor wafers. In ...	12/26/2006
7060510	Electronic and optoelectronic devices and methods for preparing same Disclosed are electronic, plasmonic and opto-electronic components that are prepared using patterned photodeposited nanoparticles on a substrate surface. Also disclosed are ferroelectric nanolithography methods for preparing components, circuits and devices. ...	06/13/2006
6828690	Non-uniform minority carrier lifetime distributions in high performance silicon power devices A process for heat-treating a single crystal silicon segment to influence the profile of minority carrier recombination centers in the segment. The segment has a front surface, a back surface, and a central plane between the front and back surfaces. In the process, ...	12/07/2004
6825100	Method for fabricating conductive line on a wafer A method for fabricating an Al—Si—containing alloy line, which is adapted to form a conductive line on a substrate, is described. A first conductive layer, a second conductive layer and an Al—Si—containing alloy layer are sequentially formed on the substrate...	11/30/2004
6316335	Method for fabricating semiconductor device Wafers, each including an MOS semiconductor component thereon, are introduced one by one into a single-wafer heat treatment system. First, hydrogen is introduced into the system and the wafer is heated up to a predetermined temperature in Step 1. Next, wh...	11/13/2001
6313013	Method and device for processing semiconductor material There are a device and method for protecting semiconductor material, wherein semiconductor material is processed on a surface of stabilized ice made from ultrapure water and particles of semiconductor material....	11/06/2001
6063697	Crushing of silicon on ultrapure ice A device for protecting semiconductor material includes a support and a surface made of ice formed from ultrapure water. Semiconductor material is situated on this support surface....	05/16/2000
5914189	Protected thermal barrier coating composite with multiple coatings A composite that protects thermal barrier coatings from the deleterious effects of environmental contaminants at operational temperatures is discovered. The thermal barrier coated parts have least two outer protective coatings that decrease infiltration o...	06/22/1999
5759087	Method for inducing damage for gettering to single crystal silicon wafer A method for inducing damage for gettering to the rear surface of a single crystal silicon wafer by polishing the rear surface, which can provide a good gettering effect to the wafer and can also depress dusting characteristics of the rear surface of the ...	06/02/1998
5710077	Method for the generation of stacking-fault-induced damage on the back of semiconductor wafers A method for the generation of stacking-fault-induced damage on the back of emiconductor wafers is by treating the back with loose hard-material particles which are suspended in a liquid. The back of the semiconductor wafer is brought into contact with the...	01/20/1998
5424224	Method of surface protection of a semiconductor wafer during polishing The protection to the backside of the semiconductor wafer is accomplished by applying a layer of silicon oxide or silicon nitride or other deposited material to the back surface of a semiconductor wafer to protect against particles, scratches, and etching...	06/13/1995
5395770	Method of controlling misfit dislocation A method of controlling a misfit dislocation in a process of producing an epitaxial semiconductor wafer comprising a semiconductor substrate and an epitaxial layer deposited on the semiconductor substrate, an impurity concentration of the epitaxial layer ...	03/07/1995
5389551	Method of manufacturing a semiconductor substrate A method of manufacturing a semiconductor substrate in which a damage layer is formed on one surface of a wafer. An etching protection film is formed on the damage layer. An epitaxial layer is formed on the other surface of the wafer. Thereafter, the etch...	02/14/1995
5348893	Method for treatment of semiconductor wafer A method for the impartation of a mechanical distortion to a semiconductor wafer by the collision of particles against the surface of the semiconductor wafer is disclosed which represses the pollution of the semiconductor wafer with impurities from the pa...	09/20/1994
5238875	Method of producing a bonded wafer This invention provides a bonded wafer of the n/n+ or p/p+ step junction or the SOI configuration possessing an outstanding getter effect by bonding two wafers thereby forming a n/n+ or p/p+ stage junction or a ...	08/24/1993
5162241	Method of manufacturing a semiconductor device A gettering site is formed on the backside of a wafer, contaminant impurities are trapped in the gettering site by heat treatment, a contaminated layer of the gettering site including the impurities is removed. The impurities are thus prevented from being...	11/10/1992
5133160	Process for the removal of specific crystal structures defects from semiconductor discs The invention relates to an improved method for removing point defects and oint defect clusters from semiconductor discs, which defects impair the quality of electronic components or structural elements made from such discs. According to the invention, pri...	07/28/1992
5130260	Method of gettering unintentional mobile impurities in silicon wafer by using a damaged layer exposed to the reverse surface thereof A method of gettering unintentional mobile impurities starts with production of an damaged portion on the reverse side of a silicon wafer, and the silicon wafer is placed in a high temperature vacuum ambience so that the unintentional mobile impurities ar...	07/14/1992
5071776	Wafer processsing method for manufacturing wafers having contaminant-gettering damage on one surface First, silicon wafers are formed by cutting silicon monocrystalline ingot into slices. Then back side and main surfaces of the wafers are subjected to lapping and etching processes. Next, the wafers are submerged into substantially pure water and ultrason...	12/10/1991
5051375	Method of producing semiconductor wafer through gettering using spherical abrasives Disclosed is a method of producing a semiconductor wafer through gettering by means of sand blasting in a semiconductor wafer fabrication process. The method includes blasting abrasives each having a configuration at least similar to a sphere against a ba...	09/24/1991
5035750	Processing method for semiconductor wafers A cleaning method and a gettering method for semiconductor wafers comprises blasting frozen particles at the surface of a semiconductor wafer. A processing apparatus for a semiconductor wafer comprises means for forming ultrafine frozen particles and mean...	07/30/1991
5006475	Method for backside damage of silicon wafers A method of backside damaging a silicon semiconductor wafer by abrading the wafer in an abrasive powder is disclosed. The wafer is rotated or translated in the powder while the powder is being vibrated. A fixture holds one or more semiconductor wafers dur...	04/09/1991
4980300	Gettering method for a semiconductor wafer When a surface of semiconductor wafer is treated for gettering, ultrasonic waves are caused to propagate along the surface of the semiconductor wafer, through pure water. Mechanical damages are formed on the surface of the semiconductor wafer along which ...	12/25/1990
4971920	Gettering method for semiconductor wafers An ultrasonic wave is propagated to the surface of a semiconductor wafer in pure water to effect the gettering treatment with respect to the surface of the semiconductor wafer. Mechanical damages are formed on the surface of the semiconductor wafer to whi...	11/20/1990
4932168	Processing apparatus for semiconductor wafers A cleaning method and a gettering method for semiconductor wafers comprises blasting frozen particles at the surface of a semiconductor wafer. A processing apparatus for a semiconductor wafer comprises means for forming ultrafine frozen particles and mean...	06/12/1990
4820650	Introducing lattice defect with ice particles in semiconductor wafer The invention employs ice for introducing lattice defect into a semiconductor wafer, and is constructed to introduce particles of ice into the semiconductor wafer by ionizing (24) and accelerating (25) the particles of ice, whereby backside damage can be ...	04/11/1989
4782029	Method of gettering semiconductor wafers with an excimer laser beam A gettering method has a step in which the back surface of a semiconductor substrate having the upper surface on which semiconductor device elements is to be formed, with a laser beam having a wavelength of 150 to 400 nm to introduce strain fields onto th...	11/01/1988
4539050	Process for the manufacture of semiconductor wafers with a rear side having a gettering action For the manufacture of semiconductor wafers with a rear side having a geting action in subsequent oxidation processes by means of the action of light, especially laser, radiation ("laser damage"), there are advantageously chosen wafers with a fine surfac...	09/03/1985
4525239	Extrinsic gettering of GaAs wafers for MESFETS and integrated circuits A method is disclosed for extrinsically gettering imperfections in a semi-insulating GaAs wafer. This is accomplished by subjecting the semi-insulating GaAs wafers to processing conditions which allow the imperfections to migrate toward a mechanically dam...	06/25/1985
4249962	Method of removing contaminating impurities from device areas in a semiconductor wafer High energy ions are implanted at both the device areas (11--11) on a semiconductor wafer 10 to form electrical devices (15--15) and at areas (14--14) remote therefrom. The device areas (11--11) are then selectively laser recrystallized to repair damage c...	02/10/1981
4018626	Impact sound stressing for semiconductor devices Methods of making semiconductor devices using the technique of impact sound stressing are disclosed. Impact sound stressing (ISS) is a mechanical acoustical technique to damage, in a known and controlled manner, semiconductor wafers. Wafers are subjected ...	04/19/1977

PatentStorm

Bizarre Patents

PatentStorm News

Class 438/472 - By vibrating or impacting