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| Number | Title | Issue Date |
| 8030182 | Semiconductor device manufacturing method and semiconductor manufacturing apparatus By hydrogen-terminating a semiconductor surface using a solution containing HF2− ions and an oxidant, the hydrogen termination can be quickly carried out. In this case, the semiconductor surface is silicon having a (111) surface, a (110) surf... | 10/04/2011 |
| 7955956 | Method for recycling/reclaiming a monitor wafer The invention provides a method for recycling/reclaiming a monitor or test wafer and a method for testing an integrated circuit manufacturing process. After a monitor wafer has been used for testing one or more semiconductor wafer processing steps to determine adequ... | 06/07/2011 |
| 7923352 | Thermal treatment equipment and method for heat-treating The invention provides a method for activating impurity element added to a semiconductor and performing gettering process in shirt time, and a thermal treatment equipment enabling to perform such the heat-treating. The thermal treatment equipment comprises treatment... | 04/12/2011 |
| 7915145 | Silicon substrate and manufacturing method thereof A silicon substrate is manufactured from single-crystal silicon which is grown to have a carbon concentration equal to or higher than 1.0×1016 atoms/cm3 and equal to or lower than 1.6×1017 atoms/cm3 and an initial oxygen... | 03/29/2011 |
| 7781311 | System and method for filling vias System and method for filling vias in integrated circuits A preferred embodiment comprises forming a spacer layer on a substrate, forming a via with walls and a bottom in the spacer layer, depositing a conformal conductive layer on the spacer layer and on the walls ... | 08/24/2010 |
| 7759227 | Silicon semiconductor substrate heat-treatment method and silicon semiconductor substrate treated by the method A method is provided capable of universally controlling the proximity gettering structure, the need for which can vary from manufacturer to manufacturer, by arbitrarily controlling an M-shaped distribution in a depth direction of a wafer BMD density after RTA in a n... | 07/20/2010 |
| 7754586 | Method of surface treating a phase change layer and method of manufacturing a phase change memory device using the same A method of surface treating a phase change layer may include, before forming the phase change layer, forming a coating layer on a surface of a bottom layer on which the phase change layer is to be formed, wherein the coating layer has a chemical structure for contr... | 07/13/2010 |
| 7754585 | Method of heat treatment of silicon wafer doped with boron A method of subjecting a silicon wafer doped with boron to a heat treatment in an argon atmosphere, wherein the argon atmosphere is replaced with a hydrogen atmosphere or a mixed gas of an argon gas and a hydrogen gas in a proper fashion, to thereby uniformize a bor... | 07/13/2010 |
| 7749870 | Method for producing SOI substrate Provided is a method for producing an SOI substrate comprising a transparent insulating substrate and a silicon film formed on a first major surface of the insulating substrate wherein a second major surface of the insulating substrate which is opposite to the major... | 07/06/2010 |
| 7749869 | Crystalline silicon substrates with improved minority carrier lifetime including a method of annealing and removing SiOx precipitates and getterning sites A method for improving the minority lifetime of silicon containing wafer having metallic contaminants therein is described incorporating annealing at 1200° C. or greater and providing a gaseous ambient of oxygen, an inert gas and a chlorine containing gas such as H... | 07/06/2010 |
| 7662701 | Gettering of silicon on insulator using relaxed silicon germanium epitaxial proximity layers One aspect of this disclosure relates to a method for creating proximity gettering sites in a silicon on insulator (SOI) wafer. In various embodiments of this method, a relaxed silicon germanium region is formed over an insulator region of the SOI to be proximate to... | 02/16/2010 |
| 7615470 | Method of manufacturing gallium nitride semiconductor The present invention provides to a gallium nitride (GaN) semiconductor and a method of manufacturing the same, capable of reducing crystal defects caused by a difference in lattice parameters, and minimizing internal residual stress. In particular, since a high-qua... | 11/10/2009 |
| 7538011 | Method of manufacturing a semiconductor device An object is to reduce the number of high temperature (equal to or greater than 600° C.) heat treatment process steps and achieve lower temperature (equal to or less than 600° C.) processes, and to simplify the process steps and increase throughput in a method of ... | 05/26/2009 |
| 7507640 | Method for producing silicon wafer A method for producing a silicon wafer, comprising performing an activation of metallic impurities by irradiating laser light on the metallic impurities constituting contaminants in the silicon wafer, changing the electric charge of the contaminants, and activating ... | 03/24/2009 |
| 7501329 | Wafer gettering using relaxed silicon germanium epitaxial proximity layers One aspect of this disclosure relates to a method for creating proximity gettering sites in a semiconductor wafer. In various embodiments of this method, a relaxed silicon germanium region is formed to be proximate to a device region on the semiconductor wafer. The ... | 03/10/2009 |
| 7419886 | Thermal treatment equipment and method for heat-treating The invention provides a method for activating impurity element added to a semiconductor and performing gettering process in shirt time, and a thermal treatment equipment enabling to perform such the heat-treating. The thermal treatment equipment comprises treatment... | 09/02/2008 |
| 7407871 | Method for passivation of plasma etch defects in DRAM devices A process for fabricating an MOS device specifically a DRAM device, featuring passivation of defects in regions of a semiconductor substrate wherein defects left unpassivated can deleteriously influence data retention time, has been developed. A high density plasma ... | 08/05/2008 |
| 7407867 | Method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrate A method for producing a semiconductor structure that includes at least one useful layer on a substrate. This method includes providing a source substrate with a zone of weakness therein that defines a relatively thick useful layer between the zone of weakness and a... | 08/05/2008 |
| 7405131 | Method and structure to prevent silicide strapping of source/drain to body in semiconductor devices with source/drain stressor The example embodiments disclose devices and methods to prevent silicide strapping of the Source/Drain to Body in semiconductor devices with S/D stressor. We provide isolation regions in the substrate and a gate structure over the substrate. We form recesses in the ... | 07/29/2008 |
| 7397110 | High resistance silicon wafer and its manufacturing method A high-resistance silicon wafer is manufactured in which a gettering ability, mechanical strength, and economical efficiency are excellent and an oxygen thermal donor is effectively prevented from being generated in a heat treatment for forming a circuit, which is i... | 07/08/2008 |
| 7387952 | Semiconductor substrate for solid-state image pickup device and producing method therefor A semiconductor substrate for forming a pixel area provided surfacially with a plurality of pixels for photoelectric conversion, the semiconductor substrate, including a polysilicon film of a thickness of 0.5-2.0, on a rear surface of the pixel area-bearing surface,... | 06/17/2008 |
| 7364987 | Method for manufacturing semiconductor device In a method of forming a semiconductor device, a copper diffusion-prevention layer is formed underneath a substrate. Impurity regions are formed on the surface of the substrate. A copper wiring is electrically connected to the impurity regions. The copper diffusion-... | 04/29/2008 |
| 7365391 | Semiconductor device and method for manufacturing thereof A semiconductor device having high withstand voltage is provided. An active groove 22a includes a long and narrow main groove part 26 and a sub groove part 27 connected to a longitudinal side surface of the main groove part, and a buried ... | 04/29/2008 |
| 7357963 | Apparatus and method of crystallizing amorphous silicon A sequential lateral solidification apparatus includes a laser generator for generating and emitting a laser beam; an X-Y stage movable in two orthogonal axial directions; and a mask arranged between the laser generator and the X-Y stage. The mask has a plurality of... | 04/15/2008 |
| 7358163 | Semiconductor device and method for fabricating the same A novel and very useful method for forming a crystal silicon film by introducing a metal element which promotes crystallization of silicon to an amorphous silicon film and for eliminating or reducing the metal element existing within the crystal silicon film thus ob... | 04/15/2008 |
| 7358171 | Method to chemically remove metal impurities from polycide gate sidewalls An embodiment includes a process of forming a gate stack that acts to resist the redeposition to the semiconductive substrate of mobilized metal such as from a metal gate electrode. An embodiment also relates to a system that achieves the process. An embodiment also... | 04/15/2008 |
| 7338883 | Process for transferring a layer of strained semiconductor material The invention relates to a process for producing an electronic structure that includes a thin layer of strained semiconductor material from a donor wafer. The donor wafer has a lattice parameter matching layer that includes an upper layer of a semiconductor material... | 03/04/2008 |
| 7339248 | Self-adjusting serial circuit of thin layers and method for production thereof The invention relates to a self-adjusting serial connection of thin layers and a method for the production thereof. The invention is characterized in that electrically conducting conductor tracks (20) are applied to a substrate (10), whereupon several ... | 03/04/2008 |
| 7332416 | Methods to manufacture contaminant-gettering materials in the surface of EUV optics Methods to manufacture contaminant-gettering materials in the surface of EUV optics are described herein. An optical element is patterned and a contaminant-gettering material is formed on a surface of the optical element. In one embodiment, a photoresist is deposite... | 02/19/2008 |
| 7332437 | Method for processing semiconductor wafer and semiconductor wafer There is provided a method for processing a semiconductor wafer subjected to a chamfering process, a lapping process, an etching process, and a mirror-polishing process, wherein acid etching is performed after alkaline etching as the etching process, and the acid et... | 02/19/2008 |
| 7332385 | Method of manufacturing a semiconductor device that includes gettering regions A catalytic element is added to an amorphous semiconductor film and heat treatment is conducted therefor to produce a crystalline semiconductor film with good quality, a TFT (semiconductor device) with a satisfactory characteristic is realized using the crystalline ... | 02/19/2008 |
| 7329590 | Method for depositing nanolaminate thin films on sensitive surfaces The present method provides tools for growing conformal metal nitride, metal carbide and metal thin films, and nanolaminate structures incorporating these films, from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is redu... | 02/12/2008 |
| 7329906 | Semiconductor device and method for forming the same A low temperature process for fabricating a high-performance and reliable semiconductor device in high yield, comprising forming a silicon oxide film as a gate insulator by chemical vapor deposition using TEOS as a starting material under an oxygen, ozone, or a nitr... | 02/12/2008 |
| 7326597 | Gettering using voids formed by surface transformation One aspect of this disclosure relates to a method for creating a gettering site in a semiconductor wafer. In various embodiments, a predetermined arrangement of a plurality of holes is formed in the semiconductor wafer through a surface of the wafer. The wafer is an... | 02/05/2008 |
| 7327019 | Semiconductor device of a charge storage type According to the present invention, a gettering layer is deposited both on the side surfaces and the bottom surface of a semiconductor chip. The semiconductor chip is then mounted on the board of a package so that a Schottky barrier is formed on the bottom surface. ... | 02/05/2008 |
| 7323398 | Method of layer transfer comprising sequential implantations of atomic species A method of manufacturing a crystalline wafer that includes implanting first atomic species in a donor substrate to form a region of weakness at a first depth therein and configured to facilitate detachment of a first layer of the donor substrate from a remaining po... | 01/29/2008 |
| 7320931 | Interfacial layer for use with high k dielectric materials Methods and apparatus are provided for depositing a layer of pure germanium can on a silicon substrate. This germanium layer is very thin, on the order of about 14 Å, and is less than the critical thickness for pure germanium on silicon. The germanium layer serves... | 01/22/2008 |
| 7318870 | Method of cleaning semiconductor substrate A cleaning method for a semiconductor substrate including placing the semiconductor substrate into a cleaning chamber and injecting ozone gas (O3) into the cleaning chamber. This process operates to cleanse the semiconductor substrate without corrosion or... | 01/15/2008 |
| 7316947 | Method of manufacturing a semiconductor device An object is to reduce the number of high temperature (equal to or greater than 600° C.) heat treatment process steps and achieve lower temperature (equal to or less than 600° C.) processes, and to simplify the process steps and increase throughput in a method of ... | 01/08/2008 |
| 7314837 | Chemical treatment of semiconductor substrates A method is disclosed for removing liquids from a semiconductor substrate by contacting the liquid on the substrate with a liquid which attracts the liquid on the substrate, separating the liquids from the substrate, and inducing a phase transition in a layer on the... | 01/01/2008 |
