Class 438/470 - Fusion of semiconductor region

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Process wherein semiconductor regions of the substrate are
No. of patents: 20
Last issue date: 07/29/2008

Number	Title	Issue Date
7405466	Method of fabricating microelectromechanical system structures A method of simultaneously bonding components, comprising the following steps. At least first, second and third components are provided and comprise: at least one glass component; and at least one conductive or semiconductive material component. The order of stackin...	07/29/2008
7153759	Method of fabricating microelectromechanical system structures A method of simultaneously bonding components, comprising the following steps. At least first, second and third components are provided and comprise: at least one glass component; and at least one conductive or semiconductive material component. The order of stackin...	12/26/2006
7153758	Anodic bonding method and electronic device having anodic bonding structure In anodic bonding between a conductor or semiconductor and glass, in order to attain good adhesion at a lower bonding temperature than usual and improve the toughness at its boundary to obtain higher reliability for a bonded portion even in a case where bonded membe...	12/26/2006
6984548	Method of making a nonvolatile memory programmable by a heat induced chemical reaction A nonvolatile memory cell occupying a minimum chip area is provided with a cell structure that includes two or more base materials being programmable by a heat induced chemical reaction to form a layer or layers of alloy. The formation of alloy results in a change i...	01/10/2006
6949423	MOSFET-fused nonvolatile read-only memory cell (MOFROM) With directly biasing drain to source in a floating-gate N-MOSFET, a new MOSFET-fused nonvolatile ROM cell (MOFROM) is provided by tunneling-induced punch through of the drain junction to the source. The MOFROM is completely compatible with the mainstream standard C...	09/27/2005
6864142	Method to produce a factory programmable IC using standard IC wafers and the structure A method for programming a semiconductor element in a semiconductor structure such as an IC involves reducing the backside thickness of the substrate and directing an energy beam through the backside at an opaque component of the semiconductor element. A support str...	03/08/2005
6838395	Method for fabricating a semiconductor crystal A method for fabricating a semiconductor crystal that has a first step for forming a semiconductor crystal layer (202) that contains carbon atoms and at least one kind of Group IV element other than carbon on a substrate (201), a second step for adding...	01/04/2005
6680227	Non-volatile memory device and fabrication method thereof A nonvolatile read-only memory device, wherein a word line is on a substrate and the word line includes a metal layer a polysilicon line. A trapping layer is further located between the word line and the substrate. A polysilicon protection line is formed ...	01/20/2004
6642102	Barrier material encapsulation of programmable material A method comprising forming as stacked materials on a substrate, a volume of programmable material and a signal line, conformably forming a first dielectric material on the stacked materials, forming a second dielectric material on the first material, etc...	11/04/2003
6610582	Field-assisted fusion bonding A method of field-assisted fusion bonding produces multiple-layer devices. Contacts (301, 303, 305, 307, 309) are placed at various points along different surfaces of a combination of two or more wafers (201, 203, 205, 501, 503, 505, 801, 803). An electri...	08/26/2003
6306692	Coplanar type polysilicon thin film transistor and method of manufacturing the same The present invention discloses a method of manufacturing a thin film transistor, including: depositing an amorphous silicon layer, an insulating layer, and a gate metal layer on a substrate sequentially; patterning the insulating layer and the gate metal...	10/23/2001
6291306	Method of improving the voltage coefficient of resistance of high polysilicon resistors A method of forming a high polysilicon resistor over a dielectric layer, comprising the following steps. A polysilicon resistor over a semiconductor structure is provided. The polysilicon resistor has a doped polysilicon layer having a first voltage coeff...	09/18/2001
6156626	Electromigration bonding process and system A process and system for connecting a semiconductor chip to a substrate is provided. The process includes providing the substrate that is configured to receive the semiconductor chip that has a bonding pad. The substrate has a first side that is suited to...	12/05/2000
6100464	Solar cell and method of producing same A method is provided of producing a solar cell having a semiconductor layer within which, in a direction of thickness, a p-n barrier layer is present, and which can be irradiated with light from at least one side. The cell has contacts for electrical cont...	08/08/2000
4667391	Process for the production of thin film hall effect transducers Process for the production of thin film Hall effect transducers of the type comprising semiconductor elements recrystallized in situ after deposition by a remelting of the semiconductor material, characterized by the following successive stages: the activ...	05/26/1987
4595428	Method for producing high-aspect ratio hollow diffused regions in a semiconductor body A semiconductor device and a method for its preparation are disclosed, wherein a body of semiconducting material has at least one bore extending completely therethrough, this bore having a substantially constant diameter of less than about 1.5 mils and an...	06/17/1986
4549912	Anode and cathode connections for the practice of electromigration In the electromigration process, liquid metal inclusions are migrated into or through bodies of semiconductor material by an electrical potential gradient driving force. The method of this invention provides anode and cathode connections generally useful ...	10/29/1985
4396456	Method of peeling epilayers A method is disclosed for peeling thin epitaxially grown crystalline layers (epilayers) from the substrates on which they have been grown. A thin layer of single-crystal is epitaxially grown on a substrate, where material at the interface of the epilayer ...	08/02/1983
4390743	Silicon layer solar cell and method of producing it A silicon layer solar cell comprises a low resistance silicon substrate produced by powder metallurgy, to which an active silicon layer is applied. The invention also includes a method of producing such a solar cell....	06/28/1983
4012242	Liquid epitaxy technique In a preferred embodiment, a technique and associated apparatus for producing heteroepitaxial semi-conductor junctions preferably for Group III-V compounds in an improved liquid-solid transport method, placing a prescribed doped "limited-volume" melt dire...	03/15/1977

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Class 438/470 - Fusion of semiconductor region