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| Number | Title | Issue Date |
| 6764870 | Method for manufacturing a gallium nitride type semiconductor laser device A gallium nitride type semiconductor laser device includes: a substrate; and a layered structure formed on the substrate. The layered structure at least includes an active layer of a nitride type semiconductor material which is interposed between a pair of nitride t... | 07/20/2004 |
| 6764888 | Method of producing nitride-based heterostructure devices A method of producing nitride based heterostructure devices by using a quaternary layer comprised of AlInGaN. The quaternary layer may be used in conjunction with a ternary layer in varying thicknesses and compositions that independently adjust polarization charges ... | 07/20/2004 |
| 6765238 | Material systems for semiconductor tunnel-junction structures The tunnel junction structure comprises a p-type tunnel junction layer of a first semiconductor material, an n-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. At least one of the semiconductor m... | 07/20/2004 |
| 6762106 | Semiconductor device and method for fabricating the same An Si/SiGe layer including an Si buffer layer, an SiGe spacer layer, a graded SiGe layer and an Si cap layer is epitaxially grown in a region corresponding to a collector opening while a polycrystalline layer is deposited on the upper surface of a nitride film, and ... | 07/13/2004 |
| 6759686 | Silicon-based ultra-violet LED A light emitting diode (LED), and a method for producing the same. The LED includes a substrate that may be made of silicon, a first conductive layer on one side, and a porous insulating layer on the opposite side. The insulating layer defines microcavities therein,... | 07/06/2004 |
| 6756246 | Method for fabricating III-V group compound semiconductor A method for fabricating a GaN-based III-V Group compound semiconductor is provided that utilizes a regrowth method based on the HVPE method to form a second III-V Group compound semiconductor layer having a flat surface on a first III-V Group compound semiconductor... | 06/29/2004 |
| 6756325 | Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region Several methods for producing an active region for a long wavelength light emitting device are disclosed. In one embodiment, the method comprises placing a substrate in an organometallic vapor phase epitaxy (OMVPE) reactor, the substrate for supporting growth of an ... | 06/29/2004 |
| 6753552 | Growth-selective structure of light-emitting diode A growth-selective structure of LED is created by growing first and patterning an oxidation layer on a substrate, then applying a lateral-growth technology to form a buffer layer on the oxidation layer selectively, and an n-GaN layer, an active layer, and a p-GaN la... | 06/22/2004 |
| 6743651 | Method of forming a SiGe-on-insulator substrate using separation by implantation of oxygen A method of fabricating high-quality, substantially relaxed SiGe-on-insulator substrate is provided by implanting oxygen into a Si/SiGe multilayer heterostructure which comprises alternating Si and SiGe layers. Specifically, the high quality, relaxed SiGe-on-insulat... | 06/01/2004 |
| 6737288 | Method for fabricating a semiconductor device A heterojunction structure has an AlxGa1−xAs layer (0 | 05/18/2004 |
| 6738175 | Light emitting device To enhance the emission output of the light emitting device including an active layer made of nitride semiconductor containing In, the light emitting device having an active layer between the n-type semiconductor layer and the p-type semiconductor layer, characteriz... | 05/18/2004 |
| 6737679 | Optoelectronic unit and transparent conductive substrate of the same An optoelectronic unit and a transparent conductive substrate of the same are disclosed. The transparent conductive substrate comprises a transparent plate, a transparent electrode film, an insulation part, and a bounding pad, wherein the transparent electrode film ... | 05/18/2004 |
| 6734033 | Ultraviolet light emitting diode A light emitting diode is disclosed. The diode includes a silicon carbide substrate having a first conductivity type, a first gallium nitride layer above the SiC substrate having the same conductivity type as the substrate, a superlattice on the GaN layer formed of ... | 05/11/2004 |
| 6734519 | Waveguide photodiode A waveguide photodiode includes an n-type cladding layer, an n-type light confining layer, an i-type light absorption layer, a p-type light confining layer, and a p-type cladding layer buried in an Fe—InP blocking layer on a semiconductor substrate. At least one o... | 05/11/2004 |
| 6730941 | Boron phosphide-based semiconductor light-emitting device, production method thereof, and light-emitting diode A boron-phosphide-based semiconductor light-emitting device having a semiconductor substrate of a first conduction type having, on its bottom surface, a bottom electrode; a first boron-phosphide-based semiconductor layer of a first conductive type provided on the su... | 05/04/2004 |
| 6730944 | InP based high temperature lasers with InAsP quantum well layers and barrier layers of Gax(ALIn)1-xP The invention provides a laser structure that operates at a wavelength of 1.3 μm and at elevated temperatures and a method of making same. The laser structure includes a quantum well layer of InAsP. The quantum well layer is sandwiched between a first barrier layer... | 05/04/2004 |
| 6730938 | Semiconductor light emitting device and method for manufacturing the same On a semiconductor substrate (1), there are laminated a light emitting layer forming portion (11) having at least an n-type layer (3) and a p-type layer (5) and a window layer (6), and a semiconductor laminating portion (12)... | 05/04/2004 |
| 6727109 | Method of fabricating long wavelength vertical-cavity surface-emitting lasers The present invention relates to a method of fabricating vertical-cavity surface emitting lasers being watched as a light source for long wavelength communication. The present invention includes forming a layer having a high resistance near the surface by implanting... | 04/27/2004 |
| 6727518 | Light emitting device using group III nitride compound semiconductor A wafer comprising a semiconductor layer formed on a substrate is diced on the back surface of the substrate to a depth of about ¾ thickness of the substrate. Thus a separation groove 21 is formed in a direction of a dicing line. A groove 22 is formed... | 04/27/2004 |
| 6720585 | Low thermal impedance DBR for optoelectronic devices A low thermal impedance optoelectronic device includes an optical cavity adjacent a low thermal impedance DBR that provides improved heat dissipation and temperature performance. The thermal impedance of the DBR may be reduced by increasing the relative or absolute ... | 04/13/2004 |
| 6720196 | Nitride-based semiconductor element and method of forming nitride-based semiconductor A thin nitride-based semiconductor layer having a low dislocation density is formed by laterally growing a nitride-based semiconductor layer on the upper surface of an underlayer and forming quantum dots on the laterally grown nitride-based semiconductor layer. The ... | 04/13/2004 |
| 6720200 | Field effect transistor and fabrication process thereof Using a mask opening a gate region, an undoped GaAs layer is selectively etched with respect to an undoped Al0.2Ga0.8As layer by dry etching with introducing a mixture gas of a chloride gas containing only chlorine and a fluoride gas containing... | 04/13/2004 |
| 6716655 | Group III nitride compound semiconductor element and method for producing the same An object of the invention is to produce, at high efficiency, semiconductor elements which are formed of a high-quality crystalline semiconductor having no cracks and a low dislocation density and which have excellent characteristics. Specifically, a mask formed fro... | 04/06/2004 |
| 6716654 | Light-emitting diode with enhanced brightness and method for fabricating the same The present invention discloses a light-emitting diode with enhanced brightness and a method for fabricating the same. The light-emitting diode comprises: an epitaxial LED structure having at least one lighting-emitting active layer with a plurality of spacers insid... | 04/06/2004 |
| 6717187 | Semiconductor optical device and the fabrication method A semiconductor optical device includes a semiconductor substrate and a stacked body formed by at least a first cladding layer, an active region and a second cladding layer; wherein both sides of the stacked body are buried by a burying layer formed by a semi-insula... | 04/06/2004 |
| 6709884 | Light emitting device, semiconductor device, and method of manufacturing the devices The invention provides a light emitting device and a semiconductor device each having improved characteristics by preventing occurrence of a damage caused by contact of a tool. On a substrate, an n-type semiconductor layer, an active layer, and a p-type semiconducto... | 03/23/2004 |
| 6709883 | Light emitting diode and method of making the same A light emitting diode (LED) and method of making the same are disclosed. The present invention uses a layer of elastic transparent adhesive material to bond a transparent substrate and a LED epitaxial structure having a light-absorbing substrate. The light absorbin... | 03/23/2004 |
| 6703688 | Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits Structures and methods for fabricating high speed digital, analog, and combined digital/analog systems using planarized relaxed SiGe as the materials platform. The relaxed SiGe allows for a plethora of strained Si layers that possess enhanced electronic p... | 03/09/2004 |
| 6696372 | Method of fabricating a semiconductor structure having quantum wires and a semiconductor device including such structure A method for the production of a semiconductor structure having self-organized quantum wires is described. The process includes the formation of multi-atomic steps on a (001) oriented semiconductor substrate inclined at an angle toward the [110] direction... | 02/24/2004 |
| 6696306 | Methods of fabricating layered structure and semiconductor device A method of fabricating a layered structure including a substrate, a first semiconductor layer with a first thermal expansion coefficient 댚, and a second semiconductor layer with a second thermal expansion coefficient 댛... | 02/24/2004 |
| 6696313 | Method for aligning quantum dots and semiconductor device fabricated by using the same A method for aligning quantum dots effectively controls a growth position of the quantum dots for obviating an irregularity of a position of spontaneous formation quantum dots, and thus aligns the quantum dots in one-dimension (1-D) or two-dimension (2-D)... | 02/24/2004 |
| 6696311 | Increasing the yield of precise wavelength lasers A wafer supporting a semiconductor structure having a material gain function that would preferentially support an Fabry-Perot laser mode at an unwanted wavelength λ2 is provided with a second-order dielectric grating located sufficiently remotely from th... | 02/24/2004 |
| 6689626 | Flexible substrate The invention relates to a substrate comprising a glass sheet (1) having a thickness which is smaller than or equal to 0.1 mm, the glass sheet (1) being provided with a layer of a synthetic resin material (2) having a thickness which is smaller than or eq... | 02/10/2004 |
| 6686217 | Compound semiconductor device manufacturing method A method of forming a compound semiconductor device. The method includes the steps of depositing a film that contains zinc oxide and silicon oxide to contain the zinc oxide by 70 wt % or more on compound semiconductor layer as a diffusion source, and diff... | 02/03/2004 |
| 6682991 | Growth method of a nitride III-V compound semiconductor, manufacturing method of a semiconductor device, and semiconductor device When making a growth mask on a substrate and using the growth mask to selectively grow nitride III-V compound semiconductors on the substrate, a multi-layered film including a nitride forming at least its top surface is used as the growth mask. The growth... | 01/27/2004 |
| 6682950 | Light emitting diode and method of making the same A light emitting diode (LED) and method of making the same are disclosed. The present invention uses a layer of transparent adhesive material to bond a transparent substrate and a LED epitaxial structure having a light-absorbing substrate. The light absor... | 01/27/2004 |
| 6677655 | Silicon wafer with embedded optoelectronic material for monolithic OEIC A structure with an optically active layer embedded in a Si wafer, such that the outermost epitaxial layer exposed to the CMOS processing equipment is always Si or another CMOS-compatible material such as SiO2. Since the optoelectronic layer is... | 01/13/2004 |
| 6670202 | Semiconductor laser and fabricating method therefor At least a lower cladding layer, an active layer for generating laser light, a first upper cladding layer, an etching stopper layer and a second upper cladding layer are stacked on a substrate. An impurity for restraining laser light absorption is diffuse... | 12/30/2003 |
| 6656756 | Technique for a surface-emitting laser diode with a metal reflector The present invention is related to a method for fabricating a surface-emitting laser diode with a metal reflector. It is mainly the use of a combination of a metal reflector and wafer bonding technology to replace the traditional epiwafer process or high... | 12/02/2003 |
| 6653163 | Device for emitting electromagnetic radiation at a predetermined wavelength and a method of producing such device A device for emitting radiation at a predetermined wavelength is disclosed. The device has a cavity comprising a first bulk region and a second bulk region of opposite conductivity type wherein a barrier is provided for spatially separating the charge car... | 11/25/2003 |
