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| Number | Title | Issue Date |
| 7638346 | Nitride semiconductor heterostructures and related methods Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination th... | 12/29/2009 |
| 7615392 | Light emitting diode and method of making the same A light emitting diode (LED) and a method of making the same are disclosed. The present invention uses a metal layer of high conductivity and high reflectivity to prevent the substrate from absorbing the light emitted. This invention also uses the bonding technology... | 11/10/2009 |
| 7601553 | Method of manufacturing a gallium nitride semiconductor light emitting device The present invention relates to a nitride semiconductor light emitting device including a plurality of nitride semi-conductor layers with a p-type nitride semiconductor formed using as nitrogen precursor ammonia together with hydrazine-based material which upon the... | 10/13/2009 |
| 7598106 | Optical semiconductor device and fabrication method therefor An optical semiconductor device such as, for example, a quantum dot SOA and a fabrication method therefor are disclosed wherein an active layer and a current constriction structure can be formed leftwardly and rightwardly symmetrically to minimize the polarization d... | 10/06/2009 |
| 7537950 | Nitride-based light emitting heterostructure An improved nitride-based light emitting heterostructure is provided. The nitride-based light emitting heterostructure includes an electron supply layer and a hole supply layer with a light generating structure disposed there between. The light generating structure ... | 05/26/2009 |
| 7534638 | III-nitride light emitting devices grown on templates to reduce strain In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve th... | 05/19/2009 |
| 7491565 | III-nitride light emitting devices fabricated by substrate removal Devices and techniques for fabricating InAlGaN light-emitting devices are described that result from the removal of light-emitting layers from the sapphire growth substrate. In several embodiments, techniques for fabricating a vertical InAlGaN light-emitting diode s... | 02/17/2009 |
| 7488613 | Nitride-based light-emitting device and method of manufacturing the same A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a sin... | 02/10/2009 |
| 7482191 | Highly doped III-nitride semiconductors A method of forming a highly doped layer of AlGaN, is practiced by first removing contaminants from a MBE machine. Wafers are then outgassed in the machine at very low pressures. A nitride is then formed on the wafer and an AlN layer is grown. The highly doped GaAlN... | 01/27/2009 |
| 7468287 | Method of fabricating a heterojunction of organic semiconducting polymers Provided is a method of forming a heterojunction of contiguous layers of organic semiconducting polymers. The method comprises firstly forming a layer of a first organic semiconducting polymer on a substrate. A solution of a film-forming material is then deposited o... | 12/23/2008 |
| 7462505 | Growth process of a crystalline gallium nitride based compound and semiconductor device including gallium nitride based compound In a method of forming a crystalline GaN-based material, a first nucleation layer is formed on a substrate at a first temperature, followed with forming a second nucleation layer at a second temperature different from the first temperature. The first and second nucl... | 12/09/2008 |
| 7459326 | Method for producing and epitaxial substrate for compound semiconductor light-emitting device In order to improve light-emission efficiency without degrading protection performance of a light-emitting layer structure a three p-type layer structure composed of first to third layers is provided in contact with a light-emitting layer structure. The first layer ... | 12/02/2008 |
| 7442569 | Vertical GaN-based LED and method of manufacturing the same Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electr... | 10/28/2008 |
| 7435608 | III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer A III-V group nitride system semiconductor self-standing substrate is made of III-V group nitride system semiconductor single crystal with a hexagonal crystal system crystalline structure. The substrate is provided with a surface that is off-oriented 0.09 degrees or... | 10/14/2008 |
| 7432142 | Methods of fabricating nitride-based transistors having regrown ohmic contact regions Transistor fabrication includes forming a nitride-based channel layer on a substrate, forming a barrier layer on the nitride-based channel layer, forming a contact recess in the barrier layer to expose a contact region of the nitride-based channel layer, forming a c... | 10/07/2008 |
| 7422915 | Light emitting diode and method for manufacturing the same A light emitting diode is disclosed. The light emitting diode comprises: a transparent substrate; a reflective layer located on a surface of the transparent substrate; a solder layer located on the other surface of the transparent substrate; a semiconductor epitaxia... | 09/09/2008 |
| 7405096 | Manufacturing method of nitride semiconductor device and nitride semiconductor device Provided is a manufacturing method of a nitride semiconductor device having a nitride semiconductor substrate (e.g. GaN substrate) in which dislocation concentrated regions align in stripe formation, the dislocation concentrated regions extending from a front surfac... | 07/29/2008 |
| 7402447 | Semiconductor laser device and method for fabricating the same A semiconductor laser device according to the present invention has a semiconductor substrate, an active layer formed on the semiconductor substrate and made of a compound semiconductor containing phosphorus, a guide layer formed on the active layer and made of a co... | 07/22/2008 |
| 7396696 | Method for manufacturing super bright light emitting diode of nanorod array having InGaN quantum well An GaN light emitting diode (LED) having a nanorod (or, nanowire) structure is disclosed. The GaN LED employs GaN nanorods in which a n-type GaN nanorod, an InGaN quantum well and a p-type GaN nanorod are subsequently formed in a longitudinal direction by inserting ... | 07/08/2008 |
| 7378680 | Migration enhanced epitaxy fabrication of quantum wells Methods and systems produce flattening layers associated with nitrogen-containing quantum wells and prevent 3-D growth of nitrogen containing layers using high As fluxes. MEE (Migration Enhanced Epitaxy) is used to flatten layers and enhance smoothness of quantum we... | 05/27/2008 |
| 7374960 | Stress measurement and stress balance in films Methods and systems are provided of fabricating a compound nitride semiconductor structure. A substrate is disposed within a processing chamber into which a group-III precursor and a nitrogen precursor are flowed. A layer is deposited over the substrate with a therm... | 05/20/2008 |
| 7371597 | Diode having vertical structure and method of manufacturing the same A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode. ... | 05/13/2008 |
| 7368795 | Image sensor module with passive component An image sensor module includes a flexible printed circuit board having an upper surface, which is formed with electric circuits and a lower surface. A passive component is arranged on the upper surface of the circuit board. A substrate has a first surface, a second... | 05/06/2008 |
| 7368310 | Light generating semiconductor device and method of making the same In a method of making a semiconductor light generating device, a GaN-based semiconductor portion is formed on a GaN or AlGaN substrate. The GaN-based semiconductor portion includes a light generating film. An electrode film is formed on the GaN-based semiconductor f... | 05/06/2008 |
| 7365369 | Nitride semiconductor device A nitride semiconductor device used chiefly as an LD and an LED element. In order to improve the output and to decrease Vf, the device is given either a three-layer structure in which a nitride semiconductor layer doped with n-type impurities serving as an n-type co... | 04/29/2008 |
| 7361522 | Growing lower defect semiconductor crystals on highly lattice-mismatched substrates A heterosystem of two different materials, mismatched in terms of lattice constant or symmetry, may be formed with reduced defects by using a two step approach proposed in this invention. Nanowires are first grown on a semiconductor substrate, and then a thin film o... | 04/22/2008 |
| 7361946 | Semiconductor device-based sensors Semiconductor device-based chemical sensors and methods associated with the same are provided. The sensors include regions that can interact with chemical species being detected. The chemical species may, for example, be a component of a fluid (e.g., gas or liquid).... | 04/22/2008 |
| 7358659 | Monolithic white light emitting device having nitride cladding layers and passive layer A monolithic white light emitting device is provided, including an active layer and a passive layer that emits light with a long wavelength obtained by wavelength conversion. White light can be obtained by appropriately controlling lights emitted from the active lay... | 04/15/2008 |
| 7358539 | Flip-chip light emitting diode with indium-tin-oxide based reflecting contacts A flip chip light emitting diode die (12) includes a light-transmissive substrate (20) and a plurality of semiconductor layers (22) are disposed on the light-transmissive substrate (20). The semiconductor layers (22) define a light... | 04/15/2008 |
| 7354785 | Electroluminescent light emitting device An electroluminescent device having a light emitting layer (25) containing phosphor particles (31, 32), wherein the phosphor particles protrude from the light emitting layer to cause the surrounding layers to conform to the protrusions, thus increasing... | 04/08/2008 |
| 7348201 | Creation of anisotropic strain in semiconductor quantum well Methods and devices for creating an anisotropic strain in a semiconductor quantum well structure to induce anisotropy thereof are disclosed herein. Initially, a substrate is provided, and a quantum well structure formed upon the substrate. A first crystalline layer ... | 03/25/2008 |
| 7344958 | Method for wafer bonding (A1, In, Ga)N and Zn(S, Se) for optoelectronic applications A method for producing a wafer bonded structure between (Al, In, Ga)N and Zn(S,Se). A highly reflective and conductive distributed Bragg reflector (DBR) for relatively short optical wave lengths can be fabricated using Zn(S,Se) and MgS/(Zn, Cd)Se materials. Using wa... | 03/18/2008 |
| 7345297 | Nitride semiconductor device A semiconductor device includes an active layer, an n-side contact layer, and a p-side contact layer. The nitride semiconductor device includes at least a first n-side layer, a second n-side layer, a third n-side layer and a fourth n-side layer formed in this order ... | 03/18/2008 |
| 7338826 | Silicon nitride passivation with ammonia plasma pretreatment for improving reliability of AlGaN/GaN HEMTs This invention pertains to an electronic device and to a method for making it. The device is a heterojunction transistor, particularly a high electron mobility transistor, characterized by presence of a 2 DEG channel. Transistors of this invention contain an AlGaN b... | 03/04/2008 |
| 7335924 | High-brightness light emitting diode having reflective layer An LED structure is disclosed herein, which comprises, sequentially arranged in the following order, a light generating structure, a non-alloy ohmic contact layer, a metallic layer, and a substrate. As a reflecting mirror, the metallic layer is made of a pure metal ... | 02/26/2008 |
| 7332366 | Light-emitting semiconductor device using group III nitrogen compound A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga | 02/19/2008 |
| 7332365 | Method for fabricating group-III nitride devices and devices fabricated using method A method according to the present invention for fabricating high light extraction photonic devices comprising growing an epitaxial semiconductor structure on a substrate and depositing a first mirror layer on the epitaxial semiconductor structure such that the epita... | 02/19/2008 |
| 7324718 | Optical device and optical module A PD array is used in an optical module for monitoring signal light. In the optical module, when monitoring is conducted, signal light that passes through an optical fiber array is branched by a branching section disposed in the optical fiber array, wherein branched... | 01/29/2008 |
| 7312480 | Semiconductor device and method of fabricating the same A first buffer layer is formed on a substrate at a lower temperature than a single-crystal-growth-temperature, one or more of a layer composed of a nitride containing neither Ga nor In, a layer which has two or more thin films having different moduli of elasticity c... | 12/25/2007 |
| 7297589 | Transistor device and method A method for making a heterojunction bipolar transistor includes the following steps: forming a heterojunction bipolar transistor by depositing, on a substrate, subcollector, collector, base, and emitter regions of semiconductor material; the step of depositing the ... | 11/20/2007 |
