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| Number | Title | Issue Date |
| 4484332 | Multiple double heterojunction buried laser device A multiple double heterojunction buried laser device is formed of a bulk structure, a plurality of double heterojunction buried lasers and electrical means. The bulk structure includes, in order, an InP:Sn substrate, an InP:Te first layer, an InP:Zn secon... | 11/20/1984 |
| 4479222 | Diffusion barrier for long wavelength laser diodes A diffusion barrier is created in a n-type heterojunction layer adjacent to the active region of a semiconductor laser by doping the n-type layer with a periodic table group VI element. The diffusion barrier in the n-type layer prevents the migration of a... | 10/23/1984 |
| 4429395 | Semiconductor laser A semiconductor laser includes a body having parallel end faces and a substrate having a ridge in a major surface thereof which extends between the end surfaces, an active layer overlying the ridge and which tapers in thickness from that portion of the ac... | 01/31/1984 |
| 4382265 | Heterojunction semiconductor device A heterojunction semiconductor device comprising an active zone made from a ternary or quaternary alloy of the Ga In As P type and resting via a buffer layer of similar composition on a substrate in such a way that the active layer and the buffer zone hav... | 05/03/1983 |
| 4341570 | Process for producing an injection laser and laser obtained by this process Process for producing an injection laser and laser obtained by this process. The active layer is weakly n doped. The same mesa is used for carrying out a proton implantation and a zinc diffusion. The active stripe is transversely limited by two homojuncti... | 07/27/1982 |
| 4340966 | Semiconductor laser with buffer layer A semiconductor laser formed on an InP substrate to have a hetero structure comprising a plurality of In1-x Gax`Asy P1-y (0.42yࣘxࣘ0.5y,0ࣘyࣘ1) layers which are lattice-matched with InP, in which a light e... | 07/20/1982 |
| 4297783 | Method of fabricating GaAs devices utilizing a semi-insulating layer of AlGaAs in combination with an overlying masking layer Surface recombination current in GaAs devices is reduced by means of a semi-insulating, oxygen, iron or chromium doped monocrystalline layer of AlGaAs grown by MBE. The AlGaAs layer is grown on a GaAs body and is then masked. Diffusion of suitable impurit... | 11/03/1981 |
| 4296425 | Luminescent diode having multiple hetero junctions A luminescent diode comprises a p+ type substrate, at least one electron-hole recombination unit consisting of a p-type layer of a certain band gap and an n-type layer of a wider band gap epitaxially grown on said p-type layer to form a hetero ... | 10/20/1981 |
| 4287485 | GaInAsP/InP Double-heterostructure lasers Double-heterostructure (DH) diode lasers based upon very thin epitaxial layers of Gax In1-x Asy P1-y grown on and lattice-matched to oriented InP substrates are disclosed. A preferred method for fabricating such... | 09/01/1981 |
| 4252576 | Epitaxial wafer for use in production of light emitting diode An epitaxial wafer of GaAs1-x Px has been doped with nitrogen and used for the production of light emitting diode (LED). The carrier concentration of the conventional GaAs1-x Px was from 3×1016 to 2Ã... | 02/24/1981 |
| 4238764 | Solid state semiconductor element and contact thereupon The device has a laser diode with an upper face of gallium arsenide which is partly covered with titanium which forms with the gallium arsenide an ohmic contact of low resistivity. Beneath the gallium arsenide an active layer for emitting light is interpo... | 12/09/1980 |
| 4233090 | Method of making a laser diode In making a laser diode by a method which includes epitaxially depositing a plurality of layers of a semiconductor material on a substrate, the final outermost layer deposited is of a material which has a band-gap lower than the preceding adjacent layer, ... | 11/11/1980 |
| 4217597 | Diode which transmits and receives light-rays of the same predetermined wavelength and optical telecommunications device using such a diode The invention relates to a diode which transmits and receives light-rays in the same wavelength. A first transmitting layer is separated from the second receiving layer, and has the opposite type of conductivity to that of the first, this layer having a l... | 08/12/1980 |
| 4207122 | Infra-red light emissive devices In (Sb0.1 As0.9) light emissive diodes and lasers are grown on Ga Sb substrates to give lattice matching. Ga Sb has higher band gap, high refractive index therefore gives electrical, but not optical, confinement required for laser ac... | 06/10/1980 |
| 4205329 | Periodic monolayer semiconductor structures grown by molecular beam epitaxy Suitably modified molecular beam epitaxy (MBE) techniques are used to synthesize single crystal, periodic monolayer superlattices of semiconductor alloys on single crystal substrates maintained below a critical growth temperature. Described is the fabrica... | 05/27/1980 |
| 4184171 | Light emitting diodes which emit in the infrared A semiconductor double heterostructure (DH) laser or spontaneous emitting diode is described which emits radiation in the infrared region of the spectrum from about 3.5 to 5.5 micrometers. The DH structure comprises a Group III-V lattice-matched system, i... | 01/15/1980 |
| 4137122 | Method of manufacturing a semiconductor device The invention relates to a method of manufacturing a semiconductor device in which a compound consisting of at least two semiconductor materials and having an energy gap which is smaller than that of a substrate is deposited epitaxially on the substrate. ... | 01/30/1979 |
| 4131904 | Degradation resistance of semiconductor electroluminescent devices The P type conductivity layer or layers of an electroluminescent device includes zinc as the primary conductivity modifier, and germanium as the secondary conductivity modifier. The combination of zinc and germanium provide an electroluminescent device ha... | 12/26/1978 |
| 4122407 | Heterostructure junction light emitting or responding or modulating devices Practice of this disclosure reduces the concentration of intrinsic defects heretofore grown into semiconducting materials. Thereby, the operational lifetime is increased of heterostructure junction light emitting or responding or modulating devices which ... | 10/24/1978 |
| 4053914 | Light emissive diode A high radiance light emissive diode has a linear drive/output characteristic by providing the active region in a mesa structure with tapering sides so that super-radiant light emitted parallel with the junction is reflected and combined with the sublinea... | 10/11/1977 |
| 4035819 | Method of making a zinc sulphide ceramic body and a zinc sulphide ceramic body made thereby A method of making a zinc sulphide ceramic body having a low electrical resistance characterized by sulphurizing a starting oxide material consisting essentially of zinc oxide and from 0.01 atomic % to 6.0 atomic % of at least one oxide of a metal selecte... | 07/12/1977 |
| 4035205 | Amphoteric heterojunction A method of manufacturing a hetero junction by epitaxial deposition in a solution. The solution contains an amphoteric dopant and the composition thereof is modified at a temperature which lies between the transition temperatures prior to and after the mo... | 07/12/1977 |
| 4032951 | Growth of III-V layers containing arsenic, antimony and phosphorus, and device uses Gallium arsenide antimonide phosphide (GaAsSbP) has been successfully grown on a gallium arsenide substrate by liquid phase epitaxy. A critical amount of phosphorus initially in growth solution is depleted with consequent grading of lattice constant and b... | 06/28/1977 |
| 4023118 | Superheterojunction laser A superheterojunction (SHJ) laser constructed from periodic structural semiconductor materials. The SHJ laser has approximately a thousand junctions which are planar and layered to provide gain in the plane of the layers. In addition, the device allows be... | 05/10/1977 |
| 3993964 | Double heterostructure stripe geometry semiconductor laser device A semiconductor laser device includes a narrow elongated semiconductor region of the same conductivity type as another semiconductor region lying in the vicinity of the active region of the laser device. The elongated region extends in depth from the surf... | 11/23/1976 |
| 3993963 | Heterostructure devices, a light guiding layer having contiguous zones of different thickness and bandgap and method of making same Described is a double heterostructure (DH) junction laser in which the intermediate layer in which light is guided is composed of an active and a passive zone which are disposed in tandem along the direction of light propagation. The active zone is thin a... | 11/23/1976 |
| 3984857 | Heteroepitaxial displays A process for producing light emitting diodes is disclosed. In the process a major planar surface of a single crystal silicon wafer is modified to acceptably match the crystallographic lattice constant of a preselected electroluminescent single crystal se... | 10/05/1976 |
| 3982261 | Epitaxial indium-gallium-arsenide phosphide layer on lattice-matched indium-phosphide substrate and devices An epitaxial layer of a quaternary III-V alloy of Ga, In, As, and P has its constituents proportioned for lattice matching to a substrate having a lattice constant falling within the range of 5.45 to 6.05 A. In addition, the constituents of the alloy are ... | 09/21/1976 |
| 3963536 | Method of making electroluminescent semiconductor devices In making electroluminescent devices comprised of layers of semiconductor material of different conductivity types, the layers are formed by a liquid phase epitaxy process in which the layer growth rate is accelerated by means of rapid cooling. The rapid ... | 06/15/1976 |
| 3962716 | Reduction of dislocations in multilayer structures of zinc-blend materials Described is a procedure for virtually eliminating disclocations in multilayer structures of materials having a crystallographic zinc-blend structure, in particular quaternary layers of Aly Ga1.sub.-y As1.sub.-z Pz | 06/08/1976 |
| 3958265 | Semiconductor light-emitting diode and method for producing same A semiconductor light-emitting diode comprising a p+-type GaAs substrate, an epitaxial p-layer of a monocrystalline solid solution of GaAlAs doped with Zn, an epitaxial n-layer of a monocrystalline solid solution of GaAlAs doped with Te, a hete... | 05/18/1976 |
| 3958263 | Stress reduction in AlGaAs-AlGaAsP multilayer structures The average stress between contiguous layers of Alx Ga1.sub.-x As and Aly Ga1.sub.-y As (y > x) is reduced by the addition of phosphorus during the growth of the latter layer to produce the quaternary Aly | 05/18/1976 |
