Combination Beverage Container and Spittoon
A combination beverage container and spittoon includes a bottom portion including outer wall and a first inner wall defining a spittoon space.
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| Number | Title | Issue Date |
| 8183131 | Method of cutting an object to be processed A method of cutting an object which can accurately cut the object is provided. An object to be processed 1 such as a silicon wafer is irradiated with laser light L while a light-converging point P is positioned therewithin, so as to form a modified region ... | 05/22/2012 |
| 8178423 | Laser beam machining method and laser beam machining apparatus A laser beam machining method wherein machining areas in which to form machined grooves and machining start point areas in which to form shallow grooves shallower than the machined grooves are alternately set in each of streets formed on a wafer, and the machined gr... | 05/15/2012 |
| 8178425 | Optical device wafer processing method An optical device wafer processing method for dividing an optical device wafer into a plurality of individual optical devices. The optical device wafer is composed of a substrate and a semiconductor layer formed on the front side of the substrate. The optical device... | 05/15/2012 |
| 8178424 | Method of fabricating light-emitting apparatus with improved light extraction efficiency and light-emitting apparatus fabricated using the method Provided are a method of fabricating a light-emitting apparatus with improved light extraction efficiency and a light-emitting apparatus fabricated using the method. The method includes: preparing a monocrystalline substrate; forming an intermediate structure on the... | 05/15/2012 |
| 8168514 | Laser separation of thin laminated glass substrates for flexible display applications A method of separating a sheet of coated brittle material comprises the steps of providing a sheet of layered brittle material comprising a brittle layer and a coating material adhered to a surface of the brittle layer and applying a laser along a separation line in... | 05/01/2012 |
| 8158493 | Laser-based material processing methods and systems Various embodiments may be used for laser-based modification of target material of a workpiece while advantageously achieving improvements in processing throughput and/or quality. Embodiments of a method of processing may include focusing and directing laser pulses ... | 04/17/2012 |
| 8153511 | Method for manufacturing semiconductor device It is an object to improve a yield of a step of cutting off a substrate. A substrate is cut off by using an ablation process. An ablation process uses a phenomenon in which a molecular bond in a portion irradiated with a laser beam, that is, a portion which absorbs ... | 04/10/2012 |
| 8148240 | Method of manufacturing semiconductor chips A semiconductor wafer is prepared. The wafer has a first and a second surface opposite to each other, and has a recess portion and a rim portion. The semiconductor wafer has semiconductor elements formed on the first surface. The rim portion surrounds the recess por... | 04/03/2012 |
| 8143141 | Laser beam machining method and semiconductor chip A laser processing method is provided, which, when cutting a substrate formed with a multilayer part including a plurality of functional devices, makes it possible to cut the multilayer part with a high precision in particular. In a state where a protective t... | 03/27/2012 |
| 8124500 | Laser processing method A laser processing method which can securely prevent particles from attaching to chips obtained by cutting a planar object is provided. When applying a stress to an object to be processed 1 through an expandable tape 23, forming materials of the object... | 02/28/2012 |
| 8101504 | Semiconductor chip fabrication method A semiconductor chip fabrication method including a modified layer forming step of applying a laser beam having a transmission wavelength to the semiconductor wafer from the back side of the semiconductor wafer along the streets formed on the front side of the semic... | 01/24/2012 |
| 8097525 | Vertical through-silicon via for a semiconductor structure A semiconductor structure includes at least one silicon substrate having first and second planar surfaces, and at least one through silicon via filled with a conductive material and extending vertically through the first planar surface of the at least one silicon su... | 01/17/2012 |
| 8071464 | Manufacturing method for light emitting device A light emitting device manufacturing method including the steps of corrugatedly scanning a laser beam along a plurality of division lines formed on a light emitting device wafer having a sapphire substrate layer and a light emitting layer to apply the laser beam to... | 12/06/2011 |
| 8062961 | Method for manufacturing a semiconductor device Provided is a method for manufacturing a semiconductor device which includes: forming a removal layer over a base (support base); forming an interconnect layer over the removal layer; mounting semiconductor chip(s) over the interconnect layer; and separating the bas... | 11/22/2011 |
| 8048780 | Method of processing optical device wafer A method of dividing an optical device wafer includes: a laser beam processing step of performing laser beam processing on the face side of an optical device wafer so as to form breakage starting points along streets; a protective plate bonding step of bonding the f... | 11/01/2011 |
| 8043941 | Laser processing method and chip An object to be processed can be cut highly accurately along a line to cut. An object to be processed 1 is irradiated with laser light while locating a converging point within a silicon wafer 11, and the converging point is relatively moved alon... | 10/25/2011 |
| 8026154 | Laser working method An object to be processed is restrained from warping at the time of laser processing. A modified region M2 is formed within a wafer 11, and fractures a2, b2 extending in directions parallel to the thickness direction of the wafer 11 | 09/27/2011 |
| 7998840 | Wafer laser processing method and apparatus A wafer laser processing method for forming deteriorated layers in the inside of a wafer having a device area and a peripheral excess area surrounding the device area, the surface of the device area being higher than the surface of the peripheral excess area, involv... | 08/16/2011 |
| 7989320 | Die bonding A die bonding method and apparatus by which a wafer substrate 11 adhered to a carrier tape 13 by an adhesive layer 12 is laser machined through the wafer substrate and through the adhesive layer at most to scribe the carrier tape to form a singu... | 08/02/2011 |
| 7981770 | Wafer machining method for preparing a wafer for dicing A wafer working method which is capable of feeding a wafer diced by a laser dicing apparatus to a subsequent step without breaking the wafer. The wafer working method involves: a first machining step of grinding a reverse side of a wafer W and then polishing the rev... | 07/19/2011 |
| 7977213 | Use of laser energy transparent stop layer to achieve minimal debris generation in laser scribing a multilayer patterned workpiece A solution to failure mechanisms caused by mechanical sawing of a mechanical semiconductor workpiece entails use of a laser beam to cut and remove the electrically conductive and low-k dielectric material layers from a dicing street before saw dicing to separate sem... | 07/12/2011 |
| 7977214 | Method of manufacturing field-effect transistor, field-effect transistor, and method of manufacturing display device There is provided a method of manufacturing a top contact field-effect transistor including forming a protection layer on an active layer formed in a semiconductor layer forming process, forming a photoresist film on the protection layer and pattern exposing the sam... | 07/12/2011 |
| 7977212 | Method for manufacturing a photovoltaic module For manufacturing a photovoltaic module (1) having on a transparent substrate (2) a transparent front electrode layer (3), a semiconductor layer (4) and a back electrode layer (5) as functional layers, the functional layers (3 | 07/12/2011 |
| 7968432 | Laser processing apparatus and laser processing method A laser processing apparatus has one laser light source that simultaneously radiates laser beams with two wavelengths. Depth positions of focusing points for laser beams are gradually changed in a wafer. Three sets of modifying region groups, i.e., six layers of mod... | 06/28/2011 |
| 7964475 | Semiconductor wafer, method of manufacturing the same and semiconductor device A modified layer 5 and an altered layer 8 are formed outside a dicing point of a dicing area 3. Thus without forming another interface between different physical properties on the dicing point, it is possible to prevent chipping from progressing... | 06/21/2011 |
| 7964476 | Method and apparatus for the laser scribing of ultra lightweight semiconductor devices A system for the laser scribing of semiconductor devices includes a laser light source operable to selectably deliver laser illumination at a first wavelength and at a second wavelength which is shorter than the first wavelength. The system further includes a suppor... | 06/21/2011 |
| 7947575 | Laser machining A method of laser machining a feature in a substrate includes machining the substrate with a pulsed laser along a scan line so that the successive pulses 81 at the substrate do not overlap but are either contiguous or spaced apart. Pulses 82, 83, 84 in... | 05/24/2011 |
| 7943490 | Method of cutting PCBS The present invention relates to a method of cutting PCB module using a laser. The method includes steps of: providing a coverlay film, the coverlay film including at least one opening defined therein; attaching the coverlay film onto the PCB module such that the th... | 05/17/2011 |
| 7939429 | Nitride semiconductor device and method of manufacturing the same A method of manufacturing a nitride semiconductor device includes the steps of: forming a division guide groove by applying a laser beam having a wavelength and energy density causing multiphoton absorption to a surface of a substrate having a group III nitride semi... | 05/10/2011 |
| 7927975 | Semiconductor material manufacture Electronic apparatus, systems, and methods include a semiconductor layer bonded to a bulk region of a wafer or a substrate, in which the semiconductor layer can be bonded to the bulk region using electromagnetic radiation. Additional apparatus, systems, and methods ... | 04/19/2011 |
| 7927974 | Method of forming a modified layer in a substrate First, mapping data storing interrupted areas is obtained. In a first modified-layer forming step, before a stacked article is stacked on a front surface of a substrate, a laser beam is directed to the interrupted areas based on the mapping data to form modified lay... | 04/19/2011 |
| 7923351 | Manufacturing method of semiconductor devices In a method of manufacturing semiconductor chips by dicing individual semiconductor devices from a semiconductor wafer, masks formed for plasma dicing in which a semiconductor wafer is divided by conducting plasma etching are removed by mechanical grinding using a g... | 04/12/2011 |
| 7919395 | Method for separating wafer using two laser beams A wafer separating method including a laminated member removing step for partially removing a laminated member of a wafer along streets by applying a laser beam to the wafer along the streets, and a cutting step for cutting a substrate of the wafer along the streets... | 04/05/2011 |
| 7915142 | Wafer processing method A wafer processing method for dividing a wafer into individual devices along streets. The wafer processing method includes the steps of forming a division groove on the front side of the wafer along each street, attaching the front side of the wafer to the front sid... | 03/29/2011 |
| 7910458 | Method and structure using selected implant angles using a linear accelerator process for manufacture of free standing films of materials A method for fabricating free standing thickness of materials using one or more semiconductor substrates, e.g., single crystal silicon, polysilicon, silicon germanium, germanium, group III/IV materials, and others. In a specific embodiment, the present method includ... | 03/22/2011 |
| 7910459 | Method of manufacturing device having a UV-curable adhesive A method of manufacturing a device, including the steps of forming dividing grooves with a predetermined depth along planned dividing lines of a wafer, then grinding the back-side surface of the wafer to expose the dividing grooves on the back side, dividing the waf... | 03/22/2011 |
| 7897486 | Semiconductor wafer coat layers and methods therefor Formulations and processes for forming wafer coat layers are disclosed. In one embodiment, an organic surface protectant is incorporated into a wafer coat formulation deposited onto a semiconductor wafer prior to the laser scribe operation. Upon removal of the wafer... | 03/01/2011 |
| 7897488 | Dividing method for wafer having film on the front side thereof A wafer dividing method for dividing a wafer having a film on the front side thereof. The wafer dividing method includes a modified layer forming step of applying a laser beam having a transmission wavelength to the substrate of the wafer from the front side thereof... | 03/01/2011 |
| 7897487 | Laser processing method and chip An object to be processed can be cut highly accurately along a line to cut. An object to be processed 1 is irradiated with laser light while locating a converging point within a silicon wafer 11, and the converging point is relatively moved alon... | 03/01/2011 |
| 7871903 | Method and system for high-speed, precise micromachining an array of devices A method and system for high-speed, precise micromachining an array of devices are disclosed wherein improved process throughput and accuracy, such as resistor trimming accuracy, are provided. Beam scanning and deflection are both used to distribute beam spots to el... | 01/18/2011 |