Bizarre Patents
A gun that fires a missile, powered by gas "discharged by the operator of the toy."
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7078318 | Method for depositing III-V semiconductor layers on a non-III-V substrate The invention relates to a method for depositing thick III-V semiconductor layers on a non-III-V substrate, particularly a silicon substrate, by introducing gaseous starting materials into the process chamber of a reactor. The aim of the invention is to carry out th... | 07/18/2006 |
| 7078252 | Method of making group III nitride compound semiconductor light emitting element A III group nitride system compound semiconductor light emitting element has: a transparent substrate with a concave portion on the surface; a filling material that is embedded in the concave portion; and a III group nitride system compound semiconductor layer that ... | 07/18/2006 |
| 7078257 | Surface emitting semiconductor laser, and method and apparatus for fabricating the same A method of fabricating a surface emitting semiconductor laser includes a first step of forming, on a substrate, multiple monitor-use semiconductor layers having stripes radiating from a center of the substrate, and a laser portion that includes semiconductor layers... | 07/18/2006 |
| 7075954 | Intelligent wavelength division multiplexing systems based on arrays of wavelength tunable lasers and wavelength tunable resonant photodetectors A wavelength division multiplexing system based on arrays of wavelength tunable lasers and wavelength tunable resonant photodetectors is disclosed. The system allows self-adjusting of the resonance wavelength of the wavelength tunable photodetectors to the wavelengt... | 07/11/2006 |
| 7071015 | Semiconductor light emitting device and method for producing the same A light emitting device employing gallium nitride type compound semiconductor which generates no crystal defect, dislocation and can be separated easily to chips by cleavage and a method for producing the same are provided. As a substrate on which gallium nitride ty... | 07/04/2006 |
| 7067847 | Semiconductor element On a substrate made of e.g., sapphire single crystal is formed an Al underlayer having FWHM X-ray rocking curve value of 90 seconds or below. A buffer layer is formed on the AlN underlayer and has a composition of AlpGaqIn1−p−qN ... | 06/27/2006 |
| 7067849 | Diode having high brightness and method thereof A light emitting diode includes a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is for... | 06/27/2006 |
| 7067339 | Selective growth method, and semiconductor light emitting device and fabrication method thereof At the time of selective growth of an active layer on a substrate, crystal is previously grown in an active layer non-growth region, and the active layer is grown in an active layer selective growth region. With this configuration, a source supplied to the non-growt... | 06/27/2006 |
| 7063997 | Process for producing nitride semiconductor light-emitting device A process for producing a nitride semiconductor light-emitting device includes the steps of preparing a substrate, growing a p-type nitride semiconductor layer on the substrate by the MOCVD process using hydrazine-based gas as a nitrogen precursor and N2 ... | 06/20/2006 |
| 7064357 | Nitride compound semiconductor light emitting device and method for producing the same A nitride compound semiconductor light emitting device includes: a GaN substrate having a crystal orientation which is tilted away from a direction by an angle which is equal to or greater than about 0.05° and which is equal to or less than about 2°, and a ... | 06/20/2006 |
| 7063995 | Nitride semiconductor light emitting device and manufacturing method thereof The light emitting device includes a p type nitride semiconductor layer, a light emitting layer and an n type nitride semiconductor layer stacked on an Si (silicon) substrate in this order from the side of the Si substrate. The Si substrate is partially removed to e... | 06/20/2006 |
| 7064037 | Silicon-germanium virtual substrate and method of fabricating the same A method of forming a relaxed silicon-germanium layer for accommodation of an overlying silicon layer formed with tensile strain, has been developed. The method features growth of multiple composite layers on a semiconductor substrate, with each composite layer comp... | 06/20/2006 |
| 7060518 | Semiconductor optical device and the fabrication method A semiconductor optical device includes a semiconductor substrate and a stacked body formed by at least a first cladding layer, an active region and a second cladding layer; wherein both sides of the stacked body are buried by a burying layer formed by a semi-insula... | 06/13/2006 |
| 7060590 | Layer transfer method The invention relates to a method of removing a peripheral zone of adhesive while using a layer of adhesive in the process of assembling and transferring a layer of material from a source substrate to a support substrate. The method is remarkable in that it includes... | 06/13/2006 |
| 7062311 | Fluorescence observing apparatus A fluorescence observing apparatus including a light source for emitting excitation light, an excitation light irradiation section for irradiating the excitation light to a sample, and a fluorescence measurement section for measuring fluorescence emitted from the sa... | 06/13/2006 |
| 7056755 | P-type nitride semiconductor and method of manufacturing the same A method for manufacturing p-type nitride semiconductor comprising a semiconductor layer forming process where a low resistivity p-type nitride semiconductor layer is formed on a substrate by introducing the sources of p-type dopant, nitrogen and Group III sources o... | 06/06/2006 |
| 7053425 | Gas sensor device A gas sensor device including a semiconductor substrate; one or more catalytic gate-electrodes deposited on a surface of the semiconductor substrate; one or more ohmic contacts deposited on the surface of the semiconductor substrate and a passivation layer deposited... | 05/30/2006 |
| 7049207 | Isolating method and transferring method for semiconductor devices A method of isolating semiconductor devices by wet etching of a semiconductor laminate structure formed on a substrate includes providing an etching stop layer having at least two layers between the substrate and the semiconductor laminate structure. The semiconduct... | 05/23/2006 |
| 7044461 | Method and apparatus for adjustably induced biaxial strain An apparatus comprising a shape memory alloy is configured as a ring shaped sample holder for a transmission electron microscope and imparts uniform biaxial strain on a thin film mounted within. The sample holder responds to a change in temperature by changing the i... | 05/16/2006 |
| 7045412 | Field-effect type semiconductor device for power amplifier In a semiconductor multi-layer structure in which a first SiGe layer having a first conductivity-type and high impurity concentration, a second SiGe layer having the first conductivity-type and a low impurity concentration and a Si layer having a low impurity concen... | 05/16/2006 |
| 7042023 | Semiconductor light emitting device and method for producing the same A semiconductor light emitting device includes a semiconductor substrate; a stacked semiconductor structure formed on the semiconductor substrate; a striped ridge structure; and a semiconductor current confinement layer provided on a side surface of the striped ridg... | 05/09/2006 |
| 7043129 | Wide bandgap semiconductor waveguide structures A waveguide structure for transmitting broad spectrum light, includes a wide bandgap semiconductor thin film arranged on a substrate and ablated to form a waveguide channel to transmit the broad spectrum light. ... | 05/09/2006 |
| 7041577 | Process for manufacturing a substrate and associated substrate A process for producing a substrate is described. The process includes providing an assembly having a first layer weakly bonded to a temporary support at an interface therebetween. At least a portion of the first layer is selectively etched substantially to the inte... | 05/09/2006 |
| 7041523 | Method of fabricating nitride semiconductor device In a wafer having an LD structure 251 formed on a GaN-based substrate 250, cleavage guide grooves 252 are formed in its surface by scribing from above the LD structure 251 with a diamond needle. The cleavage guide grooves 252 are f... | 05/09/2006 |
| 7041524 | Semiconductor laser device and method for fabricating the same A semiconductor laser device according to the present invention has a semiconductor substrate having a first region and a second region adjacent to the first region, a first active layer formed on the first region and made of a compound semiconductor, a first clad l... | 05/09/2006 |
| 7041519 | Method for producing p-type group III nitride compound semiconductor A second Group III nitride compound semiconductor layer not doped with any impurities or doped with n-type impurities or with n-type and p-type impurities is formed on a first Group III nitride compound semiconductor layer doped with p-type impurities. Resistance is... | 05/09/2006 |
| 7037741 | Compound semiconductor optoelectronic device A method for manufacturing a compound semiconductor optoelectronic device is proposed. There are steps of: forming an optoelectronic device epitaxial wafer, the optoelectronic device epitaxial wafer containing a V-shaped pit due to threading dislocation; forming an ... | 05/02/2006 |
| 7037157 | Method of fabricating light emitting device A light emitting element has been fabricated by making a barrier having a curved surface having a radius of curvature at the upper portion or lower portion, washing a surface of an anode with a porous sponge in order to remove minute grains dotted on the surface of ... | 05/02/2006 |
| 7038377 | Display device with a narrow frame An object of the present invention is to provide a display device capable of narrowing the area of the frame. In order to achieve this object, the display device according to the present invention has a substrate having a plurality of arranged display elements and a... | 05/02/2006 |
| 7033435 | Process for preparing p-n junctions having a p-type ZnO film A process for preparing p-n or n-p junctions having a p-type oxide film is disclosed. In one embodiment, a p-type zinc oxide film has a net acceptor concentration of at least about 1015 acceptors/cm3. ... | 04/25/2006 |
| 7033961 | Epitaxy/substrate release layer The present invention relates to an epitaxial structure having one or more structural epitaxial layers, including a gallium nitride (GaN) layer, which is deposited on a substrate, and a method of growing the epitaxial structure, wherein the structural epitaxial laye... | 04/25/2006 |
| 7033436 | Crystal growth method for nitride semiconductor and formation method for semiconductor device Methods of crystal growth for semiconductor materials, such as nitride semiconductors, and methods of manufacturing semiconductor devices are provided. The method of crystal growth includes forming a number of island crystal regions during a first crystal growth pha... | 04/25/2006 |
| 7034331 | Material systems for semiconductor tunnel-junction structures The tunnel junction structure comprises a p-type tunnel junction layer of a first semiconductor material, an n-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. At least one of the semiconductor m... | 04/25/2006 |
| 7034330 | Group-III nitride semiconductor device, production method thereof and light-emitting diode A Group-III nitride semiconductor device including a crystal substrate, an electrically conducting Group-III nitride semiconductor (AlXGaYIn1−(X+Y)N: 0≦X | 04/25/2006 |
| 7033854 | Method of crystallizing a nitride III-V compound semiconductor layer on a sapphire substrate To improve crystallographic property of a nitride III-V compound semiconductor layer grown on a sapphire substrate, a plurality of recesses are made on a major surface of the sapphire substrate, and the nitride III-V compound semiconductor layer is grown thereon. At... | 04/25/2006 |
| 7033858 | Method for making Group III nitride devices and devices produced thereby A method is for making at least one semiconductor device including providing a sacrificial growth substrate of Lithium Aluminate (LiAlO2); forming at least one semiconductor layer including a Group III nitride adjacent the sacrificial growth substrate; at... | 04/25/2006 |
| 7030428 | Strain balanced nitride heterojunction transistors A nitride based heterojunction transistor includes a substrate and a first Group III nitride layer, such as an AlGaN based layer, on the substrate. The first Group III-nitride based layer has an associated first strain. A second Group III-nitride based layer, such a... | 04/18/2006 |
| 7029938 | Method for forming patterns on a semiconductor device using a lift off technique Upon formation of a collector electrode around a base mesa by the lift-off method, a resist film is formed over connection portions between the outer periphery of a region OA1 and a region in which the base mesa is formed, followed by successive formation of ... | 04/18/2006 |
| 7027474 | Semiconductor laser device and manufacturing method thereof The laser semiconductor device includes a semiconductor substrate, a first clad layer of a first conductivity type, an active layer, a second clad layer of a second conductivity type, and a protective layer of the second conductivity type, and peak wavelength of pho... | 04/11/2006 |
| 7026183 | Long-wavelength semiconductor light emitting device and its manufacturing method For manufacturing a long-wavelength semiconductor light emitting device having excellent characteristics and long lifetime, a highly reactive gas is supplied together with a source material of As while the supply of a source material of a group III element is interr... | 04/11/2006 |
