Famous Patents
The ice cream cone was invented at the St. Louis Worlds Fair by Ernest Hamwi in 1904. His waffle booth was next to an ice cream vendor who ran short of dishes. Hamwi rolled a waffle to hold ice cream and the cone was born.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 4161814 | Tunnel injection of minority carriers in semi-conductors Disclosed are multi-layer thin-film devices having adjacent insulator-semiconductor layers employing n-or-p-type semiconductors wherein a charge maintained at the insulator-semiconductor interface creates a depletion region that substantially suppresses t... | 07/24/1979 |
| 4144116 | Vapor deposition of single crystal gallium nitride Method of manufacturing gallium nitride crystals by reaction of galium halide and ammonia in which free hydrogen chloride is introduced into the reaction and deposition zones.... | 03/13/1979 |
| 4095331 | Fabrication of an epitaxial layer diode in aluminum nitride on sapphire An ultraviolet light emitting diode array of aluminum nitride grown on a sapphire substrate is fabricated by sputtering a preliminary layer of aluminum nitride onto a sapphire substrate, then placing said coated substrate in contact with a source of alumi... | 06/20/1978 |
| 4082889 | Luminescent material, luminescent thin film therefrom, and optical display device therewith This disclosure provides a polycrystalline semiconductor material which has a high luminous efficiency because of an especial profile of impurity concentration within each grain thereof. The regions immediately adjacent to the grain surfaces or grain boun... | 04/04/1978 |
| 4064621 | Cadmium diffused Pb1-x Snx Te diode laser A higher power infrared Pb1-x Snx Te diode laser that is tunable at this high output power at all wavelengths from 6.5 - 32 microns, particularly 6.5 - 9 microns. The diode laser has a P-type laser cavity with a degenerate carrier co... | 12/27/1977 |
| 4008485 | Gallium arsenide infrared light emitting diode A gallium arsenide infrared-light emitting diode in which an Si-doped p-type GaAs layer is formed on an Si-doped n-type GaAs layer which is performed on an n-type GaAs substrate doped with at least one selected from Sn, Se, Te and S.... | 02/15/1977 |
| 4004342 | Fabrication of ion implanted P-N junction devices Light emitters and photovoltaic detectors are fabricated by ion implantation of cadmium, zinc, bromine or chlorine ions into a p-type CuInSe2 substrate so as to form a p-n semiconductor junction.... | 01/25/1977 |
| 4001055 | Semiconductor light-emitting diode and method for producing same A semiconductor light-emitting diode comprising a p+-type GaAs substrate, an epitaxial p-layer of a monocrystalline solid solution of GaAlAs doped with Zn, an epitaxial n-layer of a monocrystalline solid solution of GaAlAs doped with Te, a hete... | 01/04/1977 |
| 3986193 | Semiconductor SiCl light source and a method of manufacturing same A semiconductor light source using nitrogen-doped n-type silicon carbide with a p-n junction electroluminescent within the visible region of the spectrum, and with a p-layer doped with an acceptor impurity, wherein the uncompensated majority donor concent... | 10/12/1976 |
| 3982262 | Semiconductor indicating instrument A semiconductor indicating instrument or display device employing a silicon carbide crystal having a first ohmic contact with an n-type region and at least one second ohmic contact with a p-type region. Another region is disposed between the regions of op... | 09/21/1976 |
| 3975555 | Method of making electrical contacts having a low optical absorption An electrical contact having low electrical resistance and low optical absorption is fabricated on a semiconductor electroluminescent article of III-V semiconductor material having a P-type region and an N-type region contiguous to each other, with a P-N ... | 08/17/1976 |
| 3972749 | Semiconductor light source on the basis of silicon carbide single crystal A semiconductor light source on the basis of n-type silicon carbide single crystal, wherein an epitaxial silicon carbide film of the same type is disposed on the basic single crystal, a p-n junction with a depth of 0.1-2 μm is arranged on the surface of ... | 08/03/1976 |
| 3951699 | Method of manufacturing a gallium phosphide red-emitting device A method of manufacturing a gallium phosphide (GaP) red-emitting device by forming at least one n-type GaP layer on an n-type GaP substrate by the liquid phase epitaxial growth process and further depositing a p-type GaP layer on said n-type GaP layer, th... | 04/20/1976 |
| 3948693 | Process for the production of yellow glowing gallium phosphide diodes Process for the production of yellow glowing gallium phosphide diodes by a liquid phase epitaxial process in which the substrate is covered with a gallium melt saturated with gallium phosphide, elemental tellurium, oxygen and nitrogen are injected into th... | 04/06/1976 |
| 3942243 | Ohmic contact for semiconductor devices An ohmic contact for semiconductor devices, typically for contact to the P-type region of a GAsP Light Emitting Diode. The ohmic contact comprises a sequential deposition of a multi-layered structure comprising, respectively, aluminum, zinc and aluminum. ... | 03/09/1976 |
| 3940847 | Method of fabricating ion implanted znse p-n junction devices Light emitting diodes, switching diodes with memory, and backward diodes are fabricated by phosphorus ion implantation of a p-n semiconductor junction in aluminum doped zinc selenide substrate material.... | 03/02/1976 |
| 3935039 | Method of manufacturing a green light-emitting gallium phosphide device A method of manufacturing a green light-emitting gallium phosphide device which comprises the steps of preparing a liquid-phase epitaxial solution of one conductivity type containing a high concentration of nitrogen at a higher temperature than 1000°C; b... | 01/27/1976 |
| 3931631 | Gallium phosphide light-emitting diodes The disclosure herein pertains to a vapor phase process for the preparation of electroluminescent materials, particularly GaP, doped with isoelectronic impurities, particularly nitrogen, and to electroluminescent devices fabricated therefrom.... | 01/06/1976 |
