Quotables
"One of the greatest labor saving inventions of today is tomorrow!"
Vincent T. Floss
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7955881 | Method of fabricating quantum well structure In the method of fabricating a quantum well structure which includes a well layer and a barrier layer, the well layer is grown at a first temperature on a sapphire substrate. The well layer comprises a group III nitride semiconductor which contains indium as a const... | 06/07/2011 |
| 7951632 | Optical device and method of making An optical device and method is disclosed for forming the optical device within the wide-bandgap semiconductor substrate. The optical device is formed by directing a thermal energy beam onto a selected portion of the wide-bandgap semiconductor substrate for changing... | 05/31/2011 |
| 7947521 | Method for forming electrode for group-III nitride compound semiconductor light-emitting devices A method for forming an electrode for Group-III nitride compound semiconductor light-emitting devices includes a step of forming a first electrode layer having an average thickness of less than 1 nm on a Group-III nitride compound semiconductor layer, the first elec... | 05/24/2011 |
| 7939354 | Method of fabricating nitride semiconductor laser A method of fabricating a nitride semiconductor laser comprises preparing a substrate having a plurality of marker structures and a crystalline mass made of a hexagonal gallium nitride semiconductor. The primary and back surfaces of the substrate intersect with a pr... | 05/10/2011 |
| 7932114 | Method of manufacturing GaN substrate, method of manufacturing epitaxialwafer, method of manufacturing semiconductor device and epitaxialwafer Assuming that r (m) represents the radius of a GaN substrate, t1 (m) represents the thickness of the GaN substrate, h1 (m) represents a warp of the GaN substrate before formation of an epitaxialwafer, t2 (m) represents the thickness of an Al | 04/26/2011 |
| 7927901 | Method for fabricating LED chip comprising reduced mask count and lift-off processing A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting dio... | 04/19/2011 |
| 7892873 | Fabrication method of nitride-based semiconductor device A fabrication method of a nitride-based semiconductor device includes the steps of forming a stacked structure constituted of a nitride-based semiconductor on a support substrate, depositing a first bonding metal on the stacked structure, depositing a second bonding... | 02/22/2011 |
| 7883915 | Method of making nitride semiconductor laser, method of making epitaxial wafer, and nitride semiconductor laser A method of making a nitride semiconductor laser comprises forming a first InGaN film for an active layer on a gallium nitride based semiconductor region, and the first InGaN film has a first thickness. In the formation of the first InGaN film, a first gallium raw m... | 02/08/2011 |
| 7883914 | Method for fabricating a photonic crystal or photonic bandgap vertical-cavity surface-emitting laser The invention relates to fabrication of VCSELs. It provides a method for fabricating a VCSEL that contains a micro/nano-structured mode selective lateral layer, where the micro/nano-structured layer is obtained by well controlled local etching. The invention enables... | 02/08/2011 |
| RE42074 | Manufacturing method of light emitting device A method of manufacturing a light emitting device, including the steps of: forming an active layer composed of a compound semiconductor containing indium by a vapor phase growth method; and forming a cap layer composed of a compound semiconductor on said active laye... | 01/25/2011 |
| 7871843 | Method of preparing light emitting device The object of this invention is to provide a high-output type nitride light emitting device. The nitride light emitting device comprises an n-type nitride semiconductor layer, a p-type nitride semiconductor layer and an active layer therebetween, wherein the light e... | 01/18/2011 |
| 7867800 | Light-emitting semiconductor device using group III nitrogen compound A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga | 01/11/2011 |
| 7867801 | Apparatus for producing group-III nitride semiconductor layer, method of producing group-III nitride semiconductor layer, method of producing group-III nitride semiconductor light-emitting device, group-III nitride semiconductor light-emitting device thereof, and lamp thereof An apparatus for producing a group-III nitride semiconductor layer which forms a group-III nitride semiconductor layer on a substrate by a sputtering method, the apparatus including: a first plasma-generating region where a target containing a group-III element is d... | 01/11/2011 |
| 7867799 | MBE growth of a semiconductor laser diode A method of fabricating a continuous wave semiconductor laser diode in the (Al,Ga,In)N materials system comprises: growing, in sequence, a first cladding region (4), a first optical guiding region (5), an active region (6), a second optical guid... | 01/11/2011 |
| 7867802 | Diamond LED devices and associated methods LED devices incorporating diamond materials and methods for making such devices are provided. One such method may include forming epitaxially a substantially single crystal SiC layer on a substantially single crystal Si wafer, forming epitaxially a substantially sin... | 01/11/2011 |
| 7858418 | Light emitting device and method of manufacturing the same Herein disclosed a method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction ty... | 12/28/2010 |
| 7851243 | Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device In the nitride based semiconductor optical device LE1, the strained well layers 21 extend along a reference plane SR1 tilting at a tilt angle α from the plane that is orthogonal to a reference axis extending in the direction of the c-axis. The ... | 12/14/2010 |
| 7846757 | Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material p... | 12/07/2010 |
| 7838315 | Method of manufacturing vertical light emitting diode Provided is a method of manufacturing a vertical LED, the method including the steps of: preparing a sapphire substrate; forming a light emitting structure in which an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer are ... | 11/23/2010 |
| 7838316 | Method for manufacturing a nitride semiconductor laser element and a nitride semiconductor laser element A method for manufacturing a nitride semiconductor laser element, which has over a substrate a laminate including an element region constituting a cavity, an island layer separated from the element region, an exposed region separating the element region from the isl... | 11/23/2010 |
| 7824942 | Method of fabricating photoelectric device of group III nitride semiconductor and structure thereof A method of fabricating a photoelectric device of Group III nitride semiconductor comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of an original substrate; forming a patterned epitaxial-blocking layer on the first Group III... | 11/02/2010 |
| 7811847 | Optical semiconductor device and method for manufacturing the same Because of a large lattice mismatch between a sapphire substrate and a group III-V compound semiconductor, a good crystal is difficult to grow. A high-quality AlN buffer growth structure A on a sapphire substrate includes a sapphire (0001) substrate 1, an AlN... | 10/12/2010 |
| 7807491 | Method of manufacturing nitride semiconductor light-emitting device Provided is a method of manufacturing a nitride semiconductor light-emitting device including the step of contacting a surfactant material with the surface of an n-type nitride semiconductor layer or the surface of a p-type nitride semiconductor layer before the gro... | 10/05/2010 |
| 7790489 | III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer A III-V group nitride system semiconductor self-standing substrate has: a first III-V group nitride system semiconductor crystal layer that has a region with dislocation lines gathered densely, the dislocation lines being gathered substantially perpendicular to a su... | 09/07/2010 |
| 7776636 | Method for significant reduction of dislocations for a very high A1 composition A1GaN layer A method for reducing dislocation density between an AlGaN layer and a sapphire substrate involving the step of forming a self-organizing porous AlN layer of non-coalescing column-like islands with flat tops on the substrate. ... | 08/17/2010 |
| 7776637 | Method of manufacturing light emitting diodes A method of manufacturing a light emitting diode, wherein a laser lift-off (LLO) layer and an epi-layer are formed on a nitride semiconductor substrate, and the nitride semiconductor substrate is then separated through a laser lift-off process, thereby improving the... | 08/17/2010 |
| 7759149 | Gallium nitride-based semiconductor stacked structure A gallium-nitride-based semiconductor stacked structure includes a sapphire substrate; a low-temperature-deposited buffer layer which is composed of a Group III nitride material of AlXGaYN (0.5 | 07/20/2010 |
| 7754514 | Method of making a light emitting element A method of making a light emitting element, the light emitting element with a semiconductor layer represented by: AlXInYGa1−X−YN (0≦X≦1, 0≦Y≦1, 0≦X+Y≦1), has the step of wet-etching a surface of the semiconductor lay... | 07/13/2010 |
| 7732236 | III nitride semiconductor crystal and manufacturing method thereof, III nitride semiconductor device manufacturing method thereof, and light emitting device The invention provides Group III nitride semiconductor crystals of a size appropriate for semiconductor devices and methods for manufacturing the same, Group III nitride semiconductor devices and methods for manufacturing the same, and light-emitting appliances. A m... | 06/08/2010 |
| 7727791 | Semiconductor layer, process for forming the same, and semiconductor light emitting device A semiconductor layer contains, as a principal constituent, a Group III-V semiconductor compound, which may be represented by the general formula: AlxGayInzN, wherein x represents a number satisfying the condition 0≦x | 06/01/2010 |
| 7727792 | Laser diode epitaxial wafer and method for producing same A laser diode epitaxial wafer has an n-type GaAs substrate, an n-type cladding layer formed on the n-type GaAs substrate, an active layer formed on the n-type cladding layer, and a p-type cladding layer formed on the active layer. The n-type cladding layer, the acti... | 06/01/2010 |
| 7709284 | Method for deposition of magnesium doped (Al, In, Ga, B)N layers A method for growing an improved quality device by depositing a low temperature (LT) magnesium (Mg) doped nitride semiconductor thin film. The low temperature Mg doped nitride semiconductor thin film may have a thickness greater than 50 nm. A multi quantum well (MQW... | 05/04/2010 |
| 7704770 | Light emitting diode by use of metal diffusion bonding technology and method of producing light emitting diode The main objective of present invention is to provide a manufacturing method of light emitting diode that utilizes metal diffusion bonding technology. AlInGaP light emitting diode epitaxial structure on a temporary substrate is bonded to a permanent substrate having... | 04/27/2010 |
| 7700395 | Hybrid integration based on wafer-bonding of devices to AlSb monolithically grown on Si Exemplary embodiments provide a semiconductor fabrication method including a combination of monolithic integration techniques with wafer bonding techniques. The resulting semiconductor devices can be used in a wide variety of opto-electronic and/or electronic applic... | 04/20/2010 |
| 7695991 | Method for manufacturing GaN semiconductor light-emitting element A method for manufacturing a GaN semiconductor light-emitting element is provided. The method for manufacturing a GaN semiconductor light-emitting element includes forming, by crystal growth, a first GaN compound semiconductor layer of a first conductivity type, the... | 04/13/2010 |
| 7691656 | Method for fabricating a semiconductor component based on GaN A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body a... | 04/06/2010 |
| 7691657 | Light emitting device using nitride semiconductor and fabrication method of the same A nitride based 3-5 group compound semiconductor light emitting device comprising: a substrate; a buffer layer formed above the substrate; a first In-doped GaN layer formed above the buffer layer; an InxGa1-xN/InyGa1â... | 04/06/2010 |
| 7691658 | Method for improved growth of semipolar (Al,In,Ga,B)N A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow... | 04/06/2010 |
| 7687294 | Nitride semiconductor device and method of manufacturing the same The present invention provides a nitride semiconductor device. The nitride semiconductor device comprises an n-type nitride semiconductor layer formed on a nitride crystal growth substrate. An active layer is formed on the n-type nitride semiconductor layer. A first... | 03/30/2010 |
| 7687295 | Method for manufacturing optical semiconductor device In an optical semiconductor device that emits or receives light substantially perpendicularly to or in parallel to an active surface formed on a semiconductor substrate, the optical semiconductor device, an electrode that is formed on the active surface side and con... | 03/30/2010 |
