Did You Know...
...that it was melting ice cream that inspired the invention of the outboard motor? It was a lovely August day and Ole Evinrude was rowing his boat to his favorite island picnic spot. As he rowed, he watched his ice cream melt and wished he had a faster way to get to the island. At that moment the idea for the outboard motor was born!
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| Number | Title | Issue Date |
| 6972207 | Method of manufacturing annular oblique light illumination apparatus and flexible wiring substrate An annular oblique light illumination apparatus manufactured by using a flexible wiring substrate in which a plurality of arcuate zonal wiring patterns each in the form of a developed frustconical shape as a light emitting device arranging surface when cut along the... | 12/06/2005 |
| 6969873 | Nitride gallium compound semiconductor light emission device A gallium nitride compound semiconductor light emission device includes: a substrate; an n-type electrode region comprising an n-type transmissive electrode; a gallium nitride compound semiconductor multilayer structure including an active layer; and a p-type electr... | 11/29/2005 |
| 6967355 | Group III-nitride on Si using epitaxial BP buffer layer A semiconductor device and method for forming the same includes a silicon (111) single crystal substrate, and an epitaxial boron phosphide (BP) layer disposed on the substrate. A group III-nitride semiconductor epitaxial layer is disposed on the BP epitaxial layer. | 11/22/2005 |
| 6967119 | Semiconductor laser device and method of fabricating the same There is provided a semiconductor laser device having on a single substrate a plurality of laser portions each oscillating laser light of a different wavelength, the plurality of laser portions containing different types, respectively, of dopant. There is also provi... | 11/22/2005 |
| 6967122 | Group III nitride compound semiconductor and method for manufacturing the same A sapphire substrate 1 is etched so that each trench has a width of 10 μm and a depth of 10 μm were formed at 10 μm of intervals in a stripe pattern. Next, an AlN buffer layer 2 having a thickness of approximately 40 nm is formed mainly on the upper... | 11/22/2005 |
| 6967353 | Semiconductor light emitting device and fabrication method thereof A semiconductor light emitting device includes a crystal layer formed on a substrate, the crystal layer having a tilt crystal plane tilted from the principal plane of the substrate, and a first conductive type layer, an active layer, and a second conductive type lay... | 11/22/2005 |
| 6967116 | Light emitting device incorporating a luminescent material A light emitting device uses a source of exciting radiation such as an light emitting diode to excite a photo luminescent material to provide a source of visible light. The photo luminescent material is loaded into a low density material such as a xerogel or an aero... | 11/22/2005 |
| 6967117 | Method for producing high brightness LED The present invention discloses a method for producing a high brightness LED (light emitting diode). The method primarily comprises steps of: a) providing a temporary substrate for epitaxy; b) forming LED epitaxial layers on said temporary substrate, wherein said LE... | 11/22/2005 |
| 6967112 | Three-dimensional quantum dot structure for infrared photodetection A 3D quantum dot optical path structure is provided, along with a method for selectively forming a 3D quantum dot optical path. The method comprises: forming a single crystal Si substrate with a surface; forming a Si feature in the substrate, such as a via, trench, ... | 11/22/2005 |
| 6964914 | Method of manufacturing a free-standing substrate made of monocrystalline semi-conductor material A method for manufacturing a free-standing substrate made of a semiconductor material. A first assembly is provided and it includes a relatively thinner nucleation layer of a first material, a support of a second material, and a removable bonding interface defined b... | 11/15/2005 |
| 6965626 | Single mode VCSEL A VCSEL having a metallic heat spreading layer adjacent a semiconductor buffer layer containing an insulating structure. The heat spreading layer includes an opening that enables light emitted by an active region to reflect from a distributed Bragg reflector (DBR) t... | 11/15/2005 |
| 6964705 | Method for producing semiconductor crystal A seed layer as a laminate of a GaN layer (second seed layer) and an AlN buffer layer (first seed layer) is formed on a sapphire substrate. A front surface thereof is etched in the form of stripes with a stripe width (seed width) of about 5 μm, a wing width of abou... | 11/15/2005 |
| 6960490 | Method and resulting structure for manufacturing semiconductor substrates A method of manufacturing bonded substrates. The method includes providing a metallic substrate. The metal substrate has a predetermined thickness. The method also includes bonding a first thickness of compound semiconductor material overlying the metallic substrate... | 11/01/2005 |
| 6960482 | Method of fabricating nitride semiconductor and method of fabricating semiconductor device A method of fabricating a nitride semiconductor includes the steps of forming a nitride semiconductor doped with a p-type impurity, treating the surface of the nitride semiconductor in an atmosphere containing active oxygen to remove carbon remaining on the surface ... | 11/01/2005 |
| 6960486 | Mid-IR microchip laser: ZnS:Cr2+ laser with saturable absorber material A method of fabrication of laser gain material and utilization of such media includes the steps of introducing a transitional metal, preferably Cr2+ thin film of controllable thickness on the ZnS crystal facets after crystal growth by means of pulse laser... | 11/01/2005 |
| 6955936 | Methods and devices related to electrode pads for p-type Group III nitride compound semiconductors An electrode pad for a Group III nitride compound semiconductor having p-type conduction includes a triple layer structure having first, second, and third metal layers, formed on an electrode layer. A protection film with a window exposing a central portion of the t... | 10/18/2005 |
| 6955719 | Manufacturing methods for semiconductor devices with multiple III-V material layers A method for fabricating semiconductor devices with thin (e.g., submicron) and/or thick (e.g., between 1 micron and 100 microns thick) Group III nitride layers during a single epitaxial run is provided, the layers exhibiting sharp layer-to-layer interfaces. Accordin... | 10/18/2005 |
| 6955933 | Light emitting diodes with graded composition active regions A light emitting device in accordance with an embodiment of the present invention includes a first semiconductor layer of a first conductivity type having a first surface, and an active region formed overlying the first semiconductor layer. The active region include... | 10/18/2005 |
| 6953741 | Methods of fabricating contacts for semiconductor devices utilizing a pre-flow process Methods for fabricating a contact of a semiconductor device are provided by patterning an interlayer dielectric of the semiconductor device to form a contact hole that exposes a silicon-based region of a first impurity type. The exposed silicon-based region is doped... | 10/11/2005 |
| 6953729 | Heterojunction field effect transistor and manufacturing method thereof In a heterojunction FET in which source and drain areas are formed by carrying out high temperature annealing process after carrying out ion implantation in areas to be formed into source and drain areas, conventionally, the N-type carrier supply layer and the N-typ... | 10/11/2005 |
| 6953703 | Method of making a semiconductor device with exposure of sapphire substrate to activated nitrogen An epitaxial growth system comprises a housing around an epitaxial growth chamber. A substrate support is located within the growth chamber. A gallium source introduces gallium into the growth chamber and directs the gallium towards the substrate. An activated nitro... | 10/11/2005 |
| 6952024 | Group III nitride LED with silicon carbide cladding layer A semiconductor structure for light emitting devices includes a Group III nitride active layer positioned between a silicon carbide cladding layer and a Group III nitride cladding layer, wherein the silicon carbide cladding layer and the Group III nitride cladding l... | 10/04/2005 |
| 6949395 | Method of making diode having reflective layer A method of forming a light emitting diode includes forming a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active... | 09/27/2005 |
| 6946313 | Method of making an aligned electrode on a semiconductor structure A method of making an electrode on a semiconductor device including depositing metal on a top surface of a semiconductor structure, and defining a first region of the semiconductor structure for a first electrode by forming a mask over the metal. The mask has an ope... | 09/20/2005 |
| 6946317 | Method of fabricating heteroepitaxial microstructures An efficient method of fabricating a high-quality microstructure having a smooth surface. The method includes detaching a layer from a base structure to provide a carrier substrate having a detached surface, and then forming a microstructure on the detached surface ... | 09/20/2005 |
| 6946312 | Semiconductor light emitting device and its manufacture A ball-up preventive layer is formed on a first substrate. A bonding layer made of eutectic material is formed on the ball-up preventive layer. A semiconductor light emitting structure is formed on a second substrate. A first electrode is formed at least partially o... | 09/20/2005 |
| 6946309 | III-Phosphide and III-Arsenide flip chip light-emitting devices A light-emitting semiconductor device includes a stack of layers including an active region. The active region includes a semiconductor selected from the group consisting of III-Phosphides, III-Arsenides, and alloys thereof. A superstrate substantially transparent t... | 09/20/2005 |
| 6942731 | Method for improving the efficiency of epitaxially produced quantum dot semiconductor components The invention relates to a method for improving the efficiency of epitaxially grown quantum dot semiconductor components having at least one quantum dot layer. The efficiency of semiconductor components containing an active medium consisting of quantum dots is often... | 09/13/2005 |
| 6943050 | Method for making semiconductor device, semiconductor element composite, electro-optical apparatus, and electronic system The invention provides a method of fabricating a semiconductor device in which a more satisfactory selective etching ratio is ensured when AlGaAs is used for a layer provided with a semiconductor element, and provides a semiconductor element composite, an electro-op... | 09/13/2005 |
| 6940098 | Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method A growth plane of substrate 1 is processed to have a concavo-convex surface. The bottom of the concave part may be masked. When a crystal is grown by vapor phase growth using this substrate, an ingredient gas does not sufficiently reach the inside of a concav... | 09/06/2005 |
| 6940223 | Film forming apparatus and method of manufacturing light emitting device The problem regarding volatileness of a solvent in an EL forming material, which occurs in adopting printing, are solved. An EL layer is formed in a pixel portion of a light emitting device by printing. Upon formation of the EL layer, a printing chamber is pressuriz... | 09/06/2005 |
| 6936851 | Semiconductor light-emitting device and method for manufacturing the same Semiconductor light emitting device and methods for its manufacture comprises a plurality of textured district defined on the surface of the substrate. The initial inclined layer deposition serves to guide the extended defects to designated gettering centers in the ... | 08/30/2005 |
| 6936858 | Semiconductor light-emitting diode A light-emitting diode includes: a semiconductor substrate; and a layered structure, made of an AlGaInP type compound semiconductor material and provided on the semiconductor substrate. The layered structure includes: a light-emitting structure composed of a pair of... | 08/30/2005 |
| 6936357 | Bulk GaN and ALGaN single crystals Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bu... | 08/30/2005 |
| 6936487 | Semiconductor device with ohmic electrode formed on compound semiconductor having wide band gap and its manufacture method A first film of rare-earth metal is formed on a semiconductor region of compound semiconductor exposed on a substrate. A second film essentially comprising silicon is formed on the surface of the first film. The first and second films are heated to silicidate at lea... | 08/30/2005 |
| 6936488 | Homoepitaxial gallium-nitride-based light emitting device and method for producing A light emitting device comprised of a light emitting semiconductor active region disposed on a substrate comprised of GaN having a dislocation density less than 105 per cm2 is provided. ... | 08/30/2005 |
| 6936490 | Semiconductor wafer and its manufacturing method A method of epitaxially growing a SiC film on a Si substrate, including: (a) supplying a raw material gas containing a gas having P (phosphorus) element and a gas having B (boron) element on a Si substrate, and thereby synthesizing an amorphous BP thin film having a... | 08/30/2005 |
| 6933529 | Active matrix type organic light emitting diode device and thin film transistor thereof An active matrix type organic light emitting diode device and a thin film transistor thereof are disclosed in the present invention. The driving thin film transistor for an active matrix type organic light emitting diode (AMOLED) device having first and second elect... | 08/23/2005 |
| 6933213 | Method for fabricating group III-V compound semiconductor substrate Provided is a compound semiconductor substrate fabrication method involving: preparing a base substrate; forming a first buffer layer on the prepared base substrate; forming a semiconductor layer on the first buffer layer; and removing the base substrate. ... | 08/23/2005 |
| 6933160 | Method for manufacturing of a vertical light emitting device structure Disclosed are a vertical GaN based light-emitting device (LED) structure and the manufacturing method thereof. In the structure and the corresponding method, a substrate unit having a mask is used to form a multi-layer epitaxial structure and the substrate and the m... | 08/23/2005 |
