Did You Know...
...that it was melting ice cream that inspired the invention of the outboard motor? It was a lovely August day and Ole Evinrude was rowing his boat to his favorite island picnic spot. As he rowed, he watched his ice cream melt and wished he had a faster way to get to the island. At that moment the idea for the outboard motor was born!
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| Number | Title | Issue Date |
| 8187901 | Epitaxial formation support structures and associated methods Epitaxial formation support structures and associated methods of manufacturing epitaxial formation support structures and solid state lighting devices are disclosed herein. In several embodiments, a method of manufacturing an epitaxial formation support substrate ca... | 05/29/2012 |
| 8187900 | Optimization of polishing stop design The present invention provides a method of fabricating vertical LED structures in which the substrate used for epitaxial layer growth is removed through polishing. The polishing technique used in an exemplary embodiment is chemical mechanical polishing using polish ... | 05/29/2012 |
| 8183075 | Method of fabricating semiconductor substrate and method of fabricating light emitting device The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor... | 05/22/2012 |
| 8178375 | Method of determining compound ratio of compound semiconductor for light generating device A method of manufacturing a light generating device with required wavelength is disclosed. According to the method, a) a required wavelength is determined. b) A polar angle and an azimuthal angle corresponding to the required wavelength in a nitride semiconductor ar... | 05/15/2012 |
| 8178376 | Method for fabricating LED chip comprising reduced mask count and lift-off processing A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting dio... | 05/15/2012 |
| 8178377 | Method for fabricating lED chip comprising reduced mask count A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting dio... | 05/15/2012 |
| 8173467 | Method for fabricating LED chip comprising reduced mask count and lift-off processing A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting dio... | 05/08/2012 |
| 8173465 | Method for fabricating LED chip comprising reduced mask count and lift-off processing A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting dio... | 05/08/2012 |
| 8173464 | Method for fabricating semiconductor device A method for fabricating a semiconductor device includes growing an AlN layer by MOVPE in which a nitrogen-source flow ratio at a far side from a substrate is set lower than that at a near side, the nitrogen-source flow ratio being a ratio of a flow rate of a nitrog... | 05/08/2012 |
| 8173468 | Method for fabricating LED chip comprising reduced mask count and lift-off processing A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting dio... | 05/08/2012 |
| 8173466 | Method for fabricating LED chip comprising reduced mask count and lift-off processing A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting dio... | 05/08/2012 |
| 8163582 | Method for fabricating a light emitting diode chip including etching by a laser beam A method for fabricating substrate-free LED chips has a multilayer semiconductor structure at least 10 microns thick provided on a growth substrate. One or more arrays of parallel streets are etched into the multilayer semiconductor structure using a first pulsed la... | 04/24/2012 |
| 8129210 | Manufacturing method of microstructure A manufacturing method of a microstructure which enables production of a deep and narrow microstructure in a GaN semiconductor with high precision is provided. The manufacturing method of a microstructure for forming a microscopic structure in a semiconductor has a ... | 03/06/2012 |
| 8129209 | Method for fabricating a semiconductor component based on GaN A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body a... | 03/06/2012 |
| 8129208 | n-Type conductive aluminum nitride semiconductor crystal and manufacturing method thereof This invention provides a self supporting substrate which consists of a n-type conductive aluminum nitride semiconductor crystal and is useful for manufacturing the vertical conductive type AlN semiconductor device. The n-type conductive aluminum nitride semiconduct... | 03/06/2012 |
| 8124433 | Low optical loss electrode structures for LEDs An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an optically transmissive thick dielectric material formed intermediate the electrode and a light emitting semiconduc... | 02/28/2012 |
| 8124432 | Nitride semiconductor optical element and manufacturing method thereof In an InGaN-based nitride semiconductor optical device having a long wavelength (440 nm or more) equal to or more than that of blue, the increase of a wavelength is realized while suppressing In (Indium) segregation and deterioration of crystallinity. In the manufac... | 02/28/2012 |
| 8110424 | Surface treatment method of group III nitride semiconductor and manufacturing method of the group III nitride semiconductor There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polar... | 02/07/2012 |
| 8097482 | Method for manufacturing group III nitride semiconductor, method for manufacturing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp A method for manufacturing a Group III nitride semiconductor of the present invention, comprising a sputtering step for disposing a substrate and a target in a chamber and forming a Mg-doped Group III nitride semiconductor on the substrate by a reactive sputtering m... | 01/17/2012 |
| 8097481 | Growth of non-polar M-plane III-nitride film using metalorganic chemical vapor deposition (MOCVD) A method of growing non-polar m-plane III-nitride film, such as GaN, AlN, AlGaN or InGaN, wherein the non-polar m-plane III-nitride film is grown on a suitable substrate, such as an m-SiC, m-GaN, LiGaO2 or LiAlO2 substrate, using metalorganic c... | 01/17/2012 |
| 8093082 | Method of fabricating photoelectric device of group III nitride semiconductor and structure thereof A method of fabricating a photoelectric device of Group III nitride semiconductor, where the method comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of a temporary substrate; patterning the first Group III nitride semiconduc... | 01/10/2012 |
| 8093083 | Method for manufacturing a semiconductor light emitting device In one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The device includes a crystal layer including a nitride semiconductor. The crystal layer contains In and Ga atoms. The method can include forming the crystal layer by s... | 01/10/2012 |
| 8080437 | Blue light emitting semiconductor nanocrystal materials A semiconductor nanocrystal includes a core including a first semiconductor material and an overcoating including a second semiconductor material. A monodisperse population of the nanocrystals emits blue light over a narrow range of wavelengths with a high quantum e... | 12/20/2011 |
| 8076168 | Light-emitting device and method for producing light emitting device A method for producing a light-emitting device, includes: performing, on a first substrate made of III-V group compound semiconductor, crystal growth of a laminated body including an etching easy layer contiguous to the first substrate and a light-emitting layer mad... | 12/13/2011 |
| 8067257 | Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device In the nitride based semiconductor optical device LE1, the strained well layers 21 extend along a reference plane SR1 tilting at a tilt angle α from the plane that is orthogonal to a reference axis extending in the direction of the c-axis. The ... | 11/29/2011 |
| 8053263 | Method of manufacturing semiconductor light emitting device A method of manufacturing a semiconductor light emitting device may include forming an insulating layer on a substrate, forming a plurality of first holes in the insulating layer, forming a plurality of GaN rods in the plurality of first holes, and laterally growing... | 11/08/2011 |
| 8048700 | Semiconductor light emitting element and manufacturing method thereof A semiconductor light-emitting device (LE1) comprises a multilayer structure LS generating light. This multilayer structure includes a plurality of laminated compound semiconductor layers (3 to 8) and has first and second main faces (61, 62 | 11/01/2011 |
| 8043879 | Semiconductor light emitting device manufacture method A semiconductor light emitting device manufacture method is provided which can manufacture a semiconductor light emitting device of high quality. A first substrate of an n-type ZnO substrate is prepared. A lamination structure including an optical emission layer mad... | 10/25/2011 |
| 8039283 | Nitride compound semiconductor element and method for manufacturing same The present invention is directed to a production method for a nitride compound semiconductor element including a substrate and a multilayer structure 40 supported by an upper face of the substrate. First, a wafer 1 to be split into individual substrat... | 10/18/2011 |
| 8030109 | Semiconductor light emitting device, method of manufacturing same, and optical module A semiconductor light emitting device capable of realizing a long life, and a method of manufacturing the same. The impurity concentration of hydrogen in the active layer is 3×1019 cm−3 or less, and the impurity concentration of aluminum in ... | 10/04/2011 |
| 8026118 | Gallium nitride based compound semiconductor light-emitting device and method for manufacturing same The present invention provides a gallium nitride based compound semiconductor light-emitting device having high light emission efficiency and a method of manufacturing the same. The gallium nitride based compound semiconductor light-emitting device includes: a subst... | 09/27/2011 |
| 8026119 | Method of fabricating semiconductor substrate and method of fabricating light emitting device The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor... | 09/27/2011 |
| 8021904 | Ohmic contacts to nitrogen polarity GaN Contacting materials and methods for forming ohmic contact to the N-face polarity surfaces of Group-III nitride based semiconductor materials, and devices fabricated using the methods. One embodiment of a light emitting diode (LED) a Group-III nitride active epitaxi... | 09/20/2011 |
| 8021905 | Machine and process for sequential multi-sublayer deposition of copper indium gallium diselenide compound semiconductors A method of manufacture of CIGS photovoltaic cells and modules involves sequential deposition of copper indium gallium diselenide compounds in multiple thin sublayers to form a composite CIGS absorber layer of a desirable thickness greater than the thickness of each... | 09/20/2011 |
| 8012784 | Method for producing group III nitride semiconductor light emitting device, group III nitride semiconductor light emitting device, and lamp Provided is a method for producing a group III nitride semiconductor light emitting device capable of producing a group III nitride semiconductor light emitting device with excellent light emitting properties with excellent productivity; a group III nitride semicond... | 09/06/2011 |
| 7989244 | Method of manufacturing nitride-based semiconductor light-emitting device Provided is a method of manufacturing a nitride-based semiconductor light-emitting device having increased efficiency and increased output properties. The method may include forming a sacrificial layer having a wet etching property on a substrate, forming a protecti... | 08/02/2011 |
| 7981710 | Light emitting device and manufacturing method A light emitting device of the invention includes an electron transporting layer, a hole transporting layer provided mutually facing the electron transporting layer with a distance between the hole transporting layer and the electron transporting layer, a phosphor l... | 07/19/2011 |
| 7981711 | Manufacture method of a multilayer structure having non-polar a-plane {11-20} III-nitride layer A manufacture method of a multilayer structure having a non-polar a-plane {11-22} III-nitride layer includes forming a nucleation layer on a r-plane substrate, wherein the nucleation layer is composed of multiple nitride layers; and forming a non-polar a-plane {11-2... | 07/19/2011 |
| 7977133 | Method of fabricating vertical structure compound semiconductor devices A method of fabricating a vertical structure opto-electronic device includes fabricating a plurality of vertical structure opto-electronic devices on a crystal substrate, and then removing the substrate using a laser lift-off process. The method then fabricates a me... | 07/12/2011 |
| 7968360 | Method of producing nitride semiconductor light-emitting device using a surfactant material In a method of producing a nitride semiconductor light-emitting device including a nitride semiconductor active layer (105) held between an n-type nitride semiconductor layer (103, 104) and a p-type nitride semiconductor layer (106 to 108... | 06/28/2011 |
