Bizarre Patents
System for magnetically attaching templeless eyewear to a person
A system of eyewear that eliminates the need for hinges on the frames of the eyewear.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8445301 | Thin-film transistor substrate, method of manufacturing the same, and display device including the same Provided are a thin-film transistor (TFT) substrate, a method of manufacturing the same, and a display device including the same. The TFT substrate includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, an oxide semico... | 05/21/2013 |
| 8420425 | Method for producing a group III nitride semiconductor light-emitting device The present invention provides a method for producing a Group III nitride semiconductor light-emitting device whose driving voltage is reduced. In the production method, a p cladding layer has a superlattice structure in which a p-AlGaN layer having a thickness of 0... | 04/16/2013 |
| 8415187 | Large-grain crystalline thin-film structures and devices and methods for forming the same Methods for forming semiconductor devices include providing a crystalline template having an initial grain size, annealing the crystalline template, the annealed template having a final grain size larger than the initial grain size, forming a buffer layer over the a... | 04/09/2013 |
| 8415188 | Method for manufacturing nitride semiconductor laser element A method for manufacturing a nitride semiconductor laser element has: (a) forming a nitride semiconductor layer on a substrate; (b) forming a ridge on a surface of the nitride semiconductor; (c) forming a first protective film on the nitride semiconductor layer incl... | 04/09/2013 |
| 8409897 | Production method of red light emitting semiconductor device Disclosed are: an environmentally friendly red light-emitting semiconductor element which operates at low voltage, while having sufficient luminous efficiency and sufficient luminous intensity; and a method for manufacturing the same. Specifically disclosed is a met... | 04/02/2013 |
| 8409895 | Gallium nitride-based LED fabrication with PVD-formed aluminum nitride buffer layer Fabrication of gallium nitride-based light emitting diodes (LEDs) with physical vapor deposition (PVD) formed aluminum nitride buffer layers is described. ... | 04/02/2013 |
| 8409896 | Method of manufacturing semiconductor light emitting device There is provided a method of manufacturing a semiconductor light emitting device, the method including: forming a light emitting structure by sequentially growing an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a ... | 04/02/2013 |
| 8404508 | Enhancement mode GaN HEMT device and method for fabricating the same An enhancement-mode GaN transistor and a method of forming it. The enhancement-mode GaN transistor includes a substrate, transition layers, a buffer layer comprised of a III Nitride material, a barrier layer comprised of a III Nitride material, drain and source cont... | 03/26/2013 |
| 8399275 | Method for manufacturing semiconductor light emitting device According to one embodiment, a method for manufacturing a semiconductor light emitting device is disclosed. The method can include forming a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, a second insulating layer... | 03/19/2013 |
| 8389313 | Deposition method of III group nitride compound semiconductor laminated structure The present invention provides a deposition method of a multilayered structure composed of a III group nitride compound semiconductor having good crystallinity on a substrate. The multilayered structure comprises at least a buffer layer and an underlying layer from ... | 03/05/2013 |
| 8383439 | Apparatus for manufacturing group-III nitride semiconductor layer, method of manufacturing group-III nitride semiconductor layer, group-III nitride semiconductor light-emitting device, method of manufacturing group-III nitride semiconductor light-emitting device, and lamp The present invention provides an apparatus for manufacturing a group-III nitride semiconductor layer having high crystallinity. An embodiment of the present invention provides an apparatus for manufacturing a group-III nitride semiconductor layer on a substrate ... | 02/26/2013 |
| 8372672 | Nitride semiconductor light emitting device and method of manufacturing the same A nitride semiconductor light emitting device includes a light emitting structure having n-type and p-type nitride semiconductor layers and an active layer formed therebetween. N-type and p-type electrodes are electrically connected to the n-type and p-type nitride ... | 02/12/2013 |
| 8372673 | Method of seperating two material systems An embodiment of this invention discloses a method of separating two material systems, which comprises steps of providing a bulk sapphire; forming a nitride system on the bulk sapphire; forming at least two channels between the bulk sapphire and the nitride system; ... | 02/12/2013 |
| 8367449 | Semiconductor light-emitting apparatus and method of manufacturing the same A semiconductor light-emitting apparatus that has high luminous efficiency and a high breakdown voltage as well as reduced breakdown voltage variation among lots. The semiconductor light-emitting apparatus includes a first clad layer and a second clad layer. An aver... | 02/05/2013 |
| 8361822 | Light-emitting device and method for producing light emitting device A method for producing a light-emitting device, includes: performing, on a first substrate made of III-V group compound semiconductor, crystal growth of a laminated body including an etching easy layer contiguous to the first substrate and a light-emitting layer mad... | 01/29/2013 |
| 8349633 | Aluminum nitride transitional layer for reducing dislocation density and cracking of AlGaN epitaxial films A denticulated Group III nitride structure that is useful for growing AlxGa1-xN to greater thicknesses without cracking and with a greatly reduced threading dislocation (TD) density. ... | 01/08/2013 |
| 8334156 | Nitride semiconductor single crystal substrate, and methods of fabricating the same and a vertical nitride semiconductor light emitting diode using the same A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the invention, in the nitride semiconductor single crystal substrate, up... | 12/18/2012 |
| 8329488 | Method of fabricating semiconductor substrate and method of fabricating light emitting device The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor... | 12/11/2012 |
| 8324004 | Method for manufacturing of light emitting device using GaN series III-V group nitride semiconductor material A GaN based III-V nitride semiconductor light-emitting device and a method for fabricating the same are provided. In the GaN based III-V nitride semiconductor light-emitting device including first and second electrodes arranged facing opposite directions or the same... | 12/04/2012 |
| 8313968 | Fabrication of GaN and III-nitride alloys freestanding epilayers membranes using a nonbonding laser Using a laser lift-off (LLO) nonbonding technique, freestanding 4-layer GaN/AlGaN heterostructure membranes have been formed. A 4×4 mm mask was attached to the area at the center of the most-upper AlGaN layer was attached using a nonbonding material such as vacuum ... | 11/20/2012 |
| 8313969 | Method of preparing luminescent nanocrystals, the resulting nanocrystals and uses thereof The present invention comprises a method for preparing a nanocrystal having (i) a core comprising a semiconductor comprising A representing a metal or metalloid in the +III oxidation state and B representing an element in the −III oxidation state, coated with (ii)... | 11/20/2012 |
| 8293553 | Method for producing an area having reduced electrical conductivity within a semiconductor layer and optoelectronic semiconductor element In a method for producing at least at least one area (8) with reduced electrical conductivity within an electrically conductive III-V semiconductor layer (3), a ZnO layer (1) is applied to the area (8) of the semiconductor layer (3... | 10/23/2012 |
| 8288187 | Electroluminescent devices for lighting applications A method of fabricating an organic light emitting device is provided. A first electrode is provided, over which the rest of the device will be fabricated. A first organic layer is deposited over the first electrode via solution processing. The first organic layer in... | 10/16/2012 |
| 8278128 | Enhancement of optical polarization of nitride light-emitting diodes by wafer off-axis cut An off-axis cut of a nonpolar III-nitride wafer towards a polar (−c) orientation results in higher polarization ratios for light emission than wafers without such off-axis cuts. A 5° angle for an off-axis cut has been confirmed to provide the highest polarization... | 10/02/2012 |
| 8263424 | Opto-electronic and electronic devices using an N-face or M-plane gallium nitride substrate prepared via ammonothermal growth A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane Gallium Nitri... | 09/11/2012 |
| 8252613 | Color stable manganese-doped phosphors A process for preparing color stable Mn+4 doped phosphors includes providing a phosphor of formula I; Ax[MFy]:Mn+4 I and contacting the phosphor in particulate form with a saturated solution of a c... | 08/28/2012 |
| 8241938 | Methods of forming a conductive transparent oxide film layer for use in a cadmium telluride based thin film photovoltaic device Methods for forming a conductive oxide layer on a substrate are provided. The method can include sputtering a transparent conductive oxide layer (“TCO layer”) on a substrate from a target (e.g., including cadmium stannate) at a sputtering temperature of about 10... | 08/14/2012 |
| 8227282 | Method of manufacturing vertical light emitting diode A method of manufacturing a vertical light emitting diode includes: providing a first substrate; forming a lapping stop layer on the first substrate, the lapping stop layer being harder than the first substrate; depositing an epitaxial layer on the lapping stop laye... | 07/24/2012 |
| 8227281 | Manufacture method for ZnO-based light emitting device A manufacture method for a ZnO-based light emitting device, includes the steps of: forming a ZnO-based semiconductor layer of a first conductivity type above a substrate; two-dimensionally growing a first ZnO-based semiconductor layer of a second conductivity type o... | 07/24/2012 |
| 8227280 | Semiconductor light emitting device A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surf... | 07/24/2012 |
| 8222064 | Vertical light emitting diode device structure and method of fabricating the same A method of fabricating a compound semiconductor vertical LED is provided. A first growth substrate capable of supporting compound semiconductor epitaxial growth thereon is provided. One or more epitaxial layers of compound semiconductor material such as GaN or InGa... | 07/17/2012 |
| 8216869 | Group III nitride semiconductor and a manufacturing method thereof A manufacturing method of a group III nitride semiconductor includes the steps of: depositing a metal layer on an AlN template substrate or an AlN single crystal substrate formed by depositing an AlN single crystal layer with a thickness of not less than 0.1 μm nor... | 07/10/2012 |
| 8202751 | Flip-chip light emitting diodes and method of manufacturing thereof Provided are a flip-chip nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising a reflective layer formed on the p-type clad layer and at least one transparent conductive thin... | 06/19/2012 |
| 8198113 | Production method for semiconductor light emitting devices Producing a semiconductor film containing a first semiconductor layer, an active layer, and a second semiconductor layer, each represented as AlxInyGazN, on a growth substrate, the layers arranged in this order from the growth substr... | 06/12/2012 |
| 8193021 | Nitride semiconductor and method for manufacturing same A nitride semiconductor includes: a substrate having a major surface including a first crystal polarity surface and a second crystal polarity surface different from the first crystal polarity surface; and a single polarity layer provided above the major surface and ... | 06/05/2012 |
| 8193020 | Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor deposition Methods for the heteroepitaxial growth of smooth, high quality films of N-face GaN film grown by MOCVD are disclosed. Use of a misoriented substrate and possibly nitridizing the substrate allow for the growth of smooth N-face GaN and other Group III nitride films as... | 06/05/2012 |
| 8187901 | Epitaxial formation support structures and associated methods Epitaxial formation support structures and associated methods of manufacturing epitaxial formation support structures and solid state lighting devices are disclosed herein. In several embodiments, a method of manufacturing an epitaxial formation support substrate ca... | 05/29/2012 |
| 8187900 | Optimization of polishing stop design The present invention provides a method of fabricating vertical LED structures in which the substrate used for epitaxial layer growth is removed through polishing. The polishing technique used in an exemplary embodiment is chemical mechanical polishing using polish ... | 05/29/2012 |
| 8183075 | Method of fabricating semiconductor substrate and method of fabricating light emitting device The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor... | 05/22/2012 |
| 8178375 | Method of determining compound ratio of compound semiconductor for light generating device A method of manufacturing a light generating device with required wavelength is disclosed. According to the method, a) a required wavelength is determined. b) A polar angle and an azimuthal angle corresponding to the required wavelength in a nitride semiconductor ar... | 05/15/2012 |
