Bizarre Patents
Crispy Chip Sandwich and Process of Producing a Sandwich Product
A food product comprising a multilayer cookie or snack having outer layers formed from a crispy type edible food product such as a potato chip or corn chip, etc. with an intermediate marshmallow layer being in contact with the inner surface of each crispy chip and one or more filler substances.
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| Number | Title | Issue Date |
| 8173521 | Method for manufacturing bonded wafer The present invention is a method for manufacturing a bonded wafer by an ion implantation delamination method including at least the steps of, bonding a bond wafer having a micro bubble layer formed by gas ion implantation with a base wafer to be a supporting substr... | 05/08/2012 |
| 8138065 | Solid-state imaging device and method for manufacturing the same A solid-state imaging device having a high sensitivity and a structure in which a miniaturized pixel is obtained, and a method for manufacturing the solid-state imaging device in which an interface is stable, a spectroscopic characteristic is excellent and which can... | 03/20/2012 |
| 8124498 | Method of manufacturing group III nitride semiconductor layer bonded substrate The present method of manufacturing a group III nitride semiconductor layer bonded substrate includes the steps of: implanting ions I of at least any of hydrogen and helium in a region having a prescribed depth D from one main surface of a group III nitride semicond... | 02/28/2012 |
| 8119500 | Wafer bonding A method for providing a stacked wafer configuration is provided. The method includes bonding a first wafer to a second wafer. A filler material is applied in a gap formed along edges of the first wafer and the second wafer. The filler material provides support alon... | 02/21/2012 |
| 8105917 | Connection pad structure for an image sensor on a thinned substrate The invention relates to the fabrication of electronic circuits on a thinned semiconductor substrate. To produce a connection pad on the back side of the thinned substrate, the procedure is as follows: an integrated circuit is produced on an unthinned substrate, in ... | 01/31/2012 |
| 8101503 | Method of producing a thin layer of semiconductor material A semiconductor structure includes a thin semiconductor layer fixed on an applicator or flexible support, the thin layer having an exposed surface characterized by fractured solid bridges spaced apart by cavities. A method of producing the thin layer of semiconducto... | 01/24/2012 |
| 8093137 | Method of manufacturing semiconductor wafer A device layer is formed on at least the upper surface of a prime wafer by an epitaxial growth method. Then, a protective film is formed to cover at least the device layer. The lower surface of the prime wafer is ground to have a flat lower surface. ... | 01/10/2012 |
| 8093138 | Method of fabricating an epitaxially grown layer A method of forming an epitaxially grown layer by forming a region of weakness in a support substrate to define a support portion and a remainder portion on opposite sides of the region of weakness, epitaxially growing an epitaxially grown layer on the support porti... | 01/10/2012 |
| 8080464 | Methods for processing silicon on insulator wafers Methods are provided for etching and/or depositing an epitaxial layer on a silicon-on-insulator structure comprising a handle wafer, a silicon layer, and a dielectric layer between the handle wafer and the silicon layer. The silicon layer has a cleaved surface defin... | 12/20/2011 |
| 8071463 | Method and structure for fabricating multiple tiled regions onto a plate using a controlled cleaving process A reusable transfer substrate member for forming a tiled substrate structure. The member including a transfer substrate, which has a surface region. The surface region comprises a plurality of donor substrate regions. Each of the donor substrate regions is character... | 12/06/2011 |
| 8062958 | Microelectronic device wafers and methods of manufacturing Methods of forming microelectronic device wafers include fabricating a plurality of semiconductor dies at an active side of a semiconductor wafer, depositing a mask on the semiconductor wafer, removing a central portion of the mask and the semiconductor wafer, and e... | 11/22/2011 |
| 8053334 | Method for forming silicon oxide film of SOI wafer The invention is a method for forming a silicon oxide film of an SOI wafer, the method by which at least thermal oxidation treatment is performed (a process (A)) on an SOI wafer having an oxide film on the back surface and, after the thermal oxidation treatment, hea... | 11/08/2011 |
| 8053335 | Forming method of gallium nitride system compound semiconductor layer, transfer method of the same, and substrate structure with the same bonded thereto A method includes forming a first layer containing silicon oxide on a first substrate, partially removing the first layer to form an exposure portion on the first substrate, depositing amorphous gallium nitride system compound semiconductor on the first substrate wi... | 11/08/2011 |
| 8048775 | Process of forming ultra thin wafers having an edge support ring A process of forming ultra thin wafers having an edge support ring is disclosed. The process provides an edge support ring having an angled inner wall compatible with spin etch processes. ... | 11/01/2011 |
| 8048774 | Methods and systems for laser machining a substrate A formation in a first surface of a substrate is machined by an ultraviolet or visible radiation laser, to a predetermined depth that is less than a full depth of the substrate; and material is removed from a second surface of the substrate opposed to the first surf... | 11/01/2011 |
| 8048776 | Semiconductor device and method of supporting a wafer during backgrinding and reflow of solder bumps A semiconductor device is made by providing a semiconductor wafer having an active surface, forming an under bump metallization layer on the active surface of the semiconductor wafer, forming a first photosensitive layer on the active surface of the semiconductor wa... | 11/01/2011 |
| 8021963 | Wafer treating method A wafer treating method includes the steps of irradiating a wafer, provided with devices on the face side, from the back side with a laser beam capable of being transmitted through the wafer, while converging the laser beam to a predetermined depth, so as to form a ... | 09/20/2011 |
| 8012855 | Method and structure for fabricating multiple tiled regions onto a plate using a controlled cleaving process A reusable transfer substrate member for forming a tiled substrate structure. The member including a transfer substrate, which has a surface region. The surface region comprises a plurality of donor substrate regions. Each of the donor substrate regions is character... | 09/06/2011 |
| 8003494 | Method for producing a bonded wafer In a method for producing a bonded wafer by bonding a wafer for active layer and a wafer for support layer and thinning the wafer for active layer according to the invention, oxygen ions are implanted into the wafer for active layer at a state of holding a temperatu... | 08/23/2011 |
| 7989318 | Method for stacking semiconductor dies A system and method for stacking semiconductor dies is disclosed. A preferred embodiment comprises forming through-silicon vias through the wafer, protecting a rim edge of the wafer, and then removing the unprotected portions so that the rim edge has a greater thick... | 08/02/2011 |
| 7985660 | Method for manufacturing soi wafer The present invention provides a method for manufacturing an SOI wafer, including: a step of preparing a base wafer consisting of a p+ silicon single crystal wafer and a bond wafer consisting of a silicon single crystal wafer containing a dopant at a lowe... | 07/26/2011 |
| 7981768 | Method for transferring an epitaxial layer A method for producing an epitaxial layer. First, a structure is fabricated by: formation of an intermediate layer on a donor substrate; and formation of the epitaxial layer on the intermediate layer by epitaxy; with the melting temperature of the intermediate layer... | 07/19/2011 |
| 7981769 | Solid-state imaging device and method for manufacturing the same A solid-state imaging device having a high sensitivity and a structure in which a miniaturized pixel is obtained, and a method for manufacturing the solid-state imaging device in which an interface is stable, a spectroscopic characteristic is excellent and which can... | 07/19/2011 |
| 7977210 | Semiconductor substrate and semiconductor device A semiconductor substrate includes a silicon carbide substrate having a first impurity concentration, a first silicon carbide layer formed on the silicon carbide substrate and having a second impurity concentration, and a second silicon carbide layer of a first cond... | 07/12/2011 |
| 7977211 | Method for reducing the thickness of substrates The current invention presents a method for thinning wafers. The method uses a two-step process, whereby first the carrier wafer (2) is thinned and in a second step the device wafer (1) is thinned. The method is based on imprinting the combined thickne... | 07/12/2011 |
| 7960248 | Method for transfer of a thin layer A method for transferring a thin layer from an initial substrate includes forming an assembly of the initial substrate with one face of a silicone type polymer layer, this face having been treated under an ultraviolet radiation, and processing the initial substrate ... | 06/14/2011 |
| 7960249 | Method for producing wafer for backside illumination type solid imaging device A wafer for backside illumination type solid imaging device having a plurality of pixels inclusive of a photoelectric conversion device and a charge transfer transistor at its front surface side and a light receiving surface at its back surface side is produced by a... | 06/14/2011 |
| 7960247 | Die thinning processes and structures Microelectronic dies are thinned according to a variety of approaches, which may include bonding the dies to a substrate under vacuum, disposing a film over the dies and the substrate, and/or changing a center of pressure during thinning. ... | 06/14/2011 |
| 7947573 | Structure combining an IC integrated substrate and a carrier, and method of manufacturing such structure The present invention provides a structure combining an IC integrated substrate and a carrier, which comprises a carrier and an IC integrated substrate formed on the carrier. The IC integrated substrate has a first dielectric layer attached to the carrier. The mater... | 05/24/2011 |
| 7939428 | Methods for making substrates and substrates formed therefrom A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving substrate and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving supp... | 05/10/2011 |
| 7939427 | Process for fabricating a substrate of the silicon-on-insulator type with reduced roughness and uniform thickness A process for fabricating a silicon on insulator (SOI) substrate by co-implanting atomic or ionic species into a semiconductor donor substrate to form a weakened zone therein, the weakened zone forming a boundary between a thin silicon active layer and the remainder... | 05/10/2011 |
| 7927972 | Method for producing bonded wafer Even if an oxygen ion implanted layer in a wafer for active layer is not a completely continuous SiO2 layer but a layer mixed partially with Si or SiOx, it is removed by here is provided a method for producing a bonded wafer in which it is poss... | 04/19/2011 |
| 7919394 | Method for thinning substrate and method for manufacturing circuit device A method for thinning a substrate and a method for manufacturing a circuit device which make it possible to prevent the pattern of penetrating holes of a supporting plate from being transferred to the surface of the substrate and prevent non-uniform grinding of the ... | 04/05/2011 |
| 7902045 | Process for fabricating a structure for epitaxy without an exclusion zone A process for fabricating a composite structure for epitaxy, including at least one crystalline growth seed layer of semiconductor material on a support substrate, with the support substrate and the crystalline growth seed layer each having, on the periphery of thei... | 03/08/2011 |
| 7897483 | Semiconductor device and method of manufacturing semiconductor device Objects are to reduce damage to a semiconductor integrated circuit by external stress and to increase the manufacturing yield of a thinned semiconductor integrated circuit. A single crystal semiconductor layer separated from a single crystal semiconductor substrate ... | 03/01/2011 |
| 7897484 | Fabricating a top conductive layer in a semiconductor die According to an exemplary embodiment, a method for fabricating a top conductive layer in a semiconductor die includes forming a through-wafer via opening through at least one interlayer dielectric layer in a through-wafer via region of the semiconductor die. The met... | 03/01/2011 |
| 7892947 | Method for machining a workpiece on a workpiece support A workpiece machining method includes attaching a workpiece to a workpiece support with the aid of joining means. The workpiece and the workpiece support are joined to one another by an annular joining means. The composite produced is machined. The machined workpiec... | 02/22/2011 |
| 7892948 | Method for manufacturing SOI wafer and SOI wafer The present invention provides a method for manufacturing an SOI wafer in which a thickness of an SOI layer is increased by growing an epitaxial layer on the SOI layer of the SOI wafer having an oxide film and the SOI layer formed on a base wafer, wherein the epitax... | 02/22/2011 |
| 7883991 | Temporary carrier bonding and detaching processes A method of bonding and detaching a temporary carrier used for handling a wafer during the fabrication of semiconductor devices includes bonding a wafer onto a carrier through a first adhesive layer and a second adhesive layer, in which the edge zone of the wafer an... | 02/08/2011 |
| 7883990 | High resistivity SOI base wafer using thermally annealed substrate A method of forming a semiconductor-on-insulator (SOI) substrate using a thermal annealing process to provide a semiconductor base wafer having a thin high resistivity surface layer that is positioned at the interface with the buried insulating layer is provided. Sp... | 02/08/2011 |
