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| Number | Title | Issue Date |
| 8187953 | Method of manufacturing SOI substrate An object of the present invention is to improve use efficiency of a semiconductor substrate without lowering efficiency of a fabrication process. Another object of the present invention is to achieve cost reduction by effective use of a semiconductor substrate whos... | 05/29/2012 |
| 8183128 | Method of reducing roughness of a thick insulating layer A method for reducing roughness of an exposed surface of an insulator layer on a substrate, by depositing an insulator layer on a substrate wherein the insulator layer includes an exposed rough surface opposite the substrate, and then smoothing the exposed rough sur... | 05/22/2012 |
| 8181688 | Apparatus for temporary wafer bonding and debonding An improved apparatus for temporary wafer bonding includes a temporary bonder cluster and a debonder cluster. The temporary bonder cluster includes temporary bonder modules that perform electronic wafer bonding processes including adhesive layer bonding, combination... | 05/22/2012 |
| 8178419 | Method to texture a lamina surface within a photovoltaic cell It is advantageous to create texture at the surface of a photovoltaic cell to reduce reflection and increase travel length of light within the cell. A method is disclosed to create texture at the surface of a silicon body by reacting a silicide-forming metal at the ... | 05/15/2012 |
| 8173519 | Method for manufacturing semiconductor device A method for manufacturing a semiconductor device includes: forming a photocatalytic layer and an organic compound layer in contact with the photocatalytic layer over a substrate having a light transmitting property; forming an element forming layer over the substra... | 05/08/2012 |
| 8173520 | Semiconductor device and manufacturing method thereof It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Fur... | 05/08/2012 |
| 8168513 | Method for fabricating packaging substrate A method for fabricating a packaging substrate includes: providing a base having a release film with two opposite surfaces, two first auxiliary dielectric layers enclosing the release film, and two metal layers disposed on the two first auxiliary dielectric layers, ... | 05/01/2012 |
| 8168510 | Method for manufacturing semiconductor layer and semiconductor device An object is that a region separated from a semiconductor substrate when a supporting substrate is larger than the semiconductor substrate does not easily move. A method for manufacturing a semiconductor layer includes the steps of: irradiating a plurality of semico... | 05/01/2012 |
| 8168512 | Manufacturing method of semiconductor device To provide a thin semiconductor device having flexibility. A groove is formed in one surface of a substrate; an element layer including an element is formed, the element being disposed within the groove; the substrate is thinned from the other surface of the substra... | 05/01/2012 |
| 8168511 | Display device manufacturing method and laminated structure A method for manufacturing a display device includes a step of preparing a flexible substrate including a delamination layer on its back surface, a step of bonding a support substrate to the delamination layer of the flexible substrate via an adhesive layer, a step ... | 05/01/2012 |
| 8163628 | Method for manufacturing semiconductor substrate A method for manufacturing a semiconductor substrate is provided, which includes a step of forming a buffer layer over a first semiconductor substrate, a step of forming a damaged region in the first semiconductor substrate by irradiating the first semiconductor sub... | 04/24/2012 |
| 8158490 | Method for producing group III nitride-based compound semiconductor device A method for producing a Group III nitride-based compound semiconductor device includes, before bonding a support substrate to an epitaxial layer formed on an epitaxial growth substrate, forming trenches in such a manner as to extend from the top surface of a stacke... | 04/17/2012 |
| 8158491 | IC card and booking-account system using the IC card It is an object of the present invention to provide a highly sophisticated functional IC card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. An IC card comprising a disp... | 04/17/2012 |
| 8153509 | Method of fabricating light emitting diode using laser lift-off technique and laser lift-off apparatus having heater Disclosed is a method of fabricating a light emitting diode using a laser lift-off apparatus. The method includes growing an epitaxial layer including a first conductive-type compound semiconductor layer, an active layer and a second conductive-type compound semicon... | 04/10/2012 |
| 8153508 | Method for fabricating image sensor A method for fabricating an image sensor is provided. In the image sensor fabrication method, an interconnection and a dielectric interlayer are formed on a semiconductor substrate including a readout circuit. An image sensing unit is formed on a carrier substrate o... | 04/10/2012 |
| 8153507 | Method of manufacturing high power array type semiconductor laser device A method of manufacturing an array type semiconductor laser device. The method includes forming first and second electrodes on lower and upper surfaces of a wafer comprising a plurality of semiconductor laser arrays having a plurality of laser emission regions, and ... | 04/10/2012 |
| 8148238 | Method of manufacturing semiconductor device There is provided a method of manufacturing a semiconductor device which, in the case where an InP-based device is formed with a sacrificial layer in between, is capable of obtaining better device characteristics than those in the case where an AlAs single layer is ... | 04/03/2012 |
| 8143140 | Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the same There is provided a method of producing a thin GaN film-joined substrate, including the steps of: joining on a GaN bulk crystalline body a substrate different in type or chemical composition from GaN; and dividing the GaN bulk crystalline body at a plane having a di... | 03/27/2012 |
| 8138063 | Manufacturing method of a semiconductor device including a single crystal semiconductor film, and a semiconductor film including impurity An object of the present invention is to provide a semiconductor device having a structure which can realize not only suppressing a punch-through current but also reusing a silicon wafer which is used for bonding, in manufacturing a semiconductor device using an SOI... | 03/20/2012 |
| 8138064 | Method for producing silicon film-transferred insulator wafer A method for producing a silicon film-transferred insulator wafer is disclosed. The method includes a surface activation step of performing a surface activation treatment on at least one of a surface of an insulator wafer and a hydrogen ion-implanted surface of a si... | 03/20/2012 |
| 8133800 | Free-standing thickness of single crystal material and method having carrier lifetimes A method of fabricating a thickness of silicon material includes providing a silicon ingot material having a surface region and introducing a plurality of particles having an energy of about 1-5 MeV through the surface region to a depth to define a cleave region and... | 03/13/2012 |
| 8124497 | Method of manufacturing nitride semiconductor device A method of manufacturing a nitride semiconductor device is disclosed. The method includes forming a gallium nitride (GaN) epitaxial layer on a first support substrate, forming a second support substrate on the GaN epitaxial layer, forming a passivation layer on a s... | 02/28/2012 |
| 8119499 | Semiconductor substrate fabrication by etching of a peeling layer A semiconductor substrate fabrication method according to the first aspect of this invention is characterized by including a preparation step of preparing an underlying substrate, a stacking step of stacking, on the underlying substrate, at least two multilayered fi... | 02/21/2012 |
| 8110479 | Manufacturing method of SOI substrate provided with barrier layer To provide a method for manufacturing a large-area semiconductor device, to provide a method for manufacturing a semiconductor device with high efficiency, and to provide a highly-reliable semiconductor device in the case of using a large-area substrate including an... | 02/07/2012 |
| 8110480 | Method and structure for fabricating solar cells using a thick layer transfer process A photovoltaic cell device, e.g., solar cell, solar panel, and method of manufacture. The device has an optically transparent substrate comprises a first surface and a second surface. A first thickness of material (e.g., semiconductor material, single crystal materi... | 02/07/2012 |
| 8105916 | Relaxation and transfer of strained layers The invention relates to a process for fabricating a heterostructure. This process is noteworthy in that it comprises the following steps: a) a strained crystalline thin film is deposited on, or transferred onto, an intermediate substrate; b) a strain relaxation lay... | 01/31/2012 |
| 8101501 | Method of manufacturing semiconductor device To provide a method of manufacturing a semiconductor device, which prevents impurities from entering an SOI substrate. A source gas including one or plural kinds selected from a hydrogen gas, a helium gas, or halogen gas are excited to generate ions, and the ions ar... | 01/24/2012 |
| 8101500 | Semiconductor device with (110)-oriented silicon A method of forming a semiconductor device on a heavily doped P-type (110) semiconductor layer over a metal substrate includes providing a first support substrate and forming a P-type heavily doped (110) silicon layer overlying the first support substrate. At least ... | 01/24/2012 |
| 8101502 | Semiconductor device and its manufacturing method A device portion forming step includes an assisting layer forming step of forming a planarization assisting layer, which covers a plurality of conductive films, over a first planarizing layer before forming a second planarizing layer. In the assisting layer forming ... | 01/24/2012 |
| 8093136 | Method for manufacturing SOI substrate A single crystal semiconductor substrate and a base substrate are prepared; a first insulating film is formed over the single crystal semiconductor substrate; a separation layer is formed by introducing ions at a predetermined depth through a surface of the single c... | 01/10/2012 |
| 8093135 | Method of manufacturing semiconductor device To suppress an effect of metal contamination caused in manufacturing an SOI substrate. After forming a damaged region by irradiating a semiconductor substrate with hydrogen ions, the semiconductor substrate is bonded to a base substrate. Heat treatment is performed ... | 01/10/2012 |
| 8088672 | Producing a transferred layer by implanting ions through a sacrificial layer and an etching stop layer A method for producing a thin film includes the following steps: providing a primary substrate; forming an etching stop layer on the primary substrate; forming a sacrificial layer on the etching stop layer; implanting gas ions to form an ion implantation peak layer,... | 01/03/2012 |
| 8088669 | Method for manufacturing substrate of semiconductor device A method for manufacturing a substrate of a semiconductor device is provided, which comprises a step of forming a fragile layer in a semiconductor substrate by irradiating the semiconductor substrate with ion species, a step of forming a bonding layer over the semic... | 01/03/2012 |
| 8088671 | Defectivity of post thin layer separation by modification of its separation annealing A method of detaching two substrates at the embrittlement zone situated at a given depth of one of the two substrates. The method includes a separation annealing step implemented in a furnace, wherein the annealing includes a first phase during which the temperature... | 01/03/2012 |
| 8088670 | Method for manufacturing bonded substrate with sandblast treatment When manufacturing a bonded substrate using an insulator substrate as a handle wafer, there is provided a method for manufacturing a bonded substrate which can be readily removed after carried and after mounted by roughening a back surface of the bonded substrate (c... | 01/03/2012 |
| 8076215 | Method of forming an electronic device using a separation technique A method of forming an electronic device can include forming a patterned layer adjacent to a side of a substrate including a semiconductor material. The method can also include separating a semiconductor layer and the patterned layer from the substrate, wherein the ... | 12/13/2011 |
| 8067294 | Method of manufacturing semiconductor device including protective film It is an object of the invention to provide a lightweight semiconductor device having a highly reliable sealing structure which can prevent ingress of impurities such as moisture that deteriorate element characteristics, and a method of manufacturing thereof. A prot... | 11/29/2011 |
| 8058149 | Method for fabricating a semiconductor substrate A method for fabricating a semiconductor on insulator substrate by providing a first semiconductor substrate with a first impurity density of a first impurity type, subjecting the first semiconductor substrate to a first thermal treatment to thereby reduce the first... | 11/15/2011 |
| 8058148 | Methods and apparatus for producing semiconductor on insulator structures using directed exfoliation Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer o... | 11/15/2011 |
| 8058146 | Peeling method The present invention provides a method for manufacturing massively and efficiently a minute device which can receive or send data in contact, preferably, out of contact by forming an integrated circuit which is formed by a thin film over a large glass substrate and... | 11/15/2011 |
