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A method of swing on a swing is disclosed, in which a user positioned on a standard swing suspended by two chains from a substantially horizontal tree branch induces side to side motion by pulling alternately on one chain and then the other.
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| Number | Title | Issue Date |
| 8133799 | Controlling warping in integrated circuit devices Techniques for integrated circuit device fabrication are provided. In one aspect, an integrated circuit device comprises a base, at least one die attached to the base, and a counterbalancing layer on at least a portion of at least one side of the base adapted to com... | 03/13/2012 |
| 8008165 | Nitride semiconductor wafer and method of processing nitride semiconductor wafer Nitride semiconductor wafers which are produced by epitaxially grown nitride films on a foreign undersubstrate in vapor phase have strong inner stress due to misfit between the nitride and the undersubstrate material. A GaN wafer which has made by piling GaN films u... | 08/30/2011 |
| 7940439 | Method for generating a micromechanical structure In a method for manufacturing a micromechanical structure, first a two-dimensional structure is formed in a substrate. The two-dimensional structure is deflected from the substrate plane by action of force and fixed in the deflected state. ... | 05/10/2011 |
| 7935611 | Method for manufacturing substrate for photoelectric conversion element A silicon layer having a conductivity type opposite to that of a bulk is provided on the surface of a silicon substrate and hydrogen ions are implanted to a predetermined depth into the surface region of the silicon substrate through the silicon layer to form a hydr... | 05/03/2011 |
| 7923347 | Controlling warping in integrated circuit devices Techniques for integrated circuit device fabrication are provided. In one aspect, an integrated circuit device comprises a base, at least one die attached to the base, and a counterbalancing layer on at least a portion of at least one side of the base adapted to com... | 04/12/2011 |
| 7871899 | Methods of forming back side layers for thinned wafers A method of processing a wafer including a plurality of integrated circuit devices on a front side of the wafer, may include thinning the wafer from a back side opposite the front side. After thinning the wafer, a back side layer may be provided on the back side of ... | 01/18/2011 |
| 7829432 | Method for manufacturing SOI substrate To improve bonding strength and improve reliability of an SOI substrate in bonding a semiconductor substrate and a base substrate to each other even when an insulating film containing nitrogen is used as a bonding layer, an oxide film is provided on the semiconducto... | 11/09/2010 |
| 7803693 | Bowed wafer hybridization compensation A planarizing method performed on a non-planar wafer involves forming electrically conductive posts extending through a removable material, each of the posts having a length such that a top of each post is located above a plane defining a point of maximum deviation ... | 09/28/2010 |
| 7682933 | Wafer alignment and bonding Provided is a method and apparatus for close alignment of two or more electrically conductive wafers which are positioned face-to-face in closely spaced opposition, the wafers having position marks on corresponding portions thereof, the wafers being aligned as to th... | 03/23/2010 |
| 7648887 | Classification apparatus for semiconductor substrate, classification method of semiconductor substrate, and manufacturing method of semiconductor device A classification apparatus for the semiconductor substrate is provided with a bow measuring section which accepts silicon substrates and measures respective bows thereof. The classification apparatus is also provided with a bow judging section which, based on one or... | 01/19/2010 |
| 7595255 | Method for manufacturing strip level substrate without warpage and method for manufacturing semiconductor package using the same A strip level substrate is manufactured by: applying solder resist on a substrate including a plurality of unit substrate divided by a scribe line; and patterning the applied solder resist to expose an electrode terminal and a ball land in each unit substrate, where... | 09/29/2009 |
| 7575982 | Stacked-substrate processes for production of nitride semiconductor structures Methods are provided of fabricating compound nitride semiconductor structures. A group-III precursor and a nitrogen precursor are flowed into a processing chamber to deposit a first layer over a surface of a first substrate with a thermal chemical-vapor-deposition p... | 08/18/2009 |
| 7521334 | Method for producing direct bonded wafer and direct bonded wafer A method for producing a direct bonded wafer comprising: forming a thermal oxide film or a CVD oxide film on a surface of at least one of a bond wafer and a base wafer, and bonding the wafer to the other wafer via the oxide film; subsequently thinning the bond wafer... | 04/21/2009 |
| 7470599 | Dual-side epitaxy processes for production of nitride semiconductor structures Methods are provided of fabricating a nitride semiconductor structure. A group-III precursor and a nitrogen precursor are flowed into a processing chamber to deposit a first layer over one side of the substrate with a thermal chemical-vapor-deposition process. A sec... | 12/30/2008 |
| 7432174 | Methods for fabricating semiconductor substrates with silicon regions having differential crystallographic orientations A method is provided for fabricating a differential semiconductor substrate. A first structure is provided which comprises a first semiconductor substrate including a first semiconductor region, and a first oxide layer overlying a surface of the first semiconductor ... | 10/07/2008 |
| 7427554 | Manufacturing strained silicon substrates using a backing material A method for forming a strained silicon layer of semiconductor material. The method includes providing a deformable surface region having a first predetermined radius of curvature, which is defined by R(1) and is defined normal to the surface region. A backin... | 09/23/2008 |
| 7410880 | Method for measuring bonding quality of bonded substrates, metrology apparatus, and method of producing a device from a bonded substrate In a method for measuring the bonding quality of bonded substrates, such as bonded SOI wafers, a plurality of marks are created at a first side of a top substrate after, or before, the bonding of the top substrate onto a bottom substrate. Then, the positions of the ... | 08/12/2008 |
| 7387945 | Semiconductor chip, semiconductor device and electronic equipment including warpage control film, and manufacturing method of same A semiconductor chip is provided that is highly packageable and particularly well suited for mounting on a circuit board having a curved surface. The semiconductor chip comprises a warpage control film that controls the warpage of a substrate. ... | 06/17/2008 |
| 7358554 | Semiconductor manufacturing apparatus for modifying-in-film stress of thin films, and product formed thereby An apparatus for depositing a thin film on a substrate and product produced thereby are disclosed. In particular, deposition of the thin film is carried out on the substrate having an applied pressure. This applied pressure flexes the substrate to reduce in-plane st... | 04/15/2008 |
| 7354815 | Method for fabricating semiconductor devices using strained silicon bearing material A method of manufacturing an integrated circuit on semiconductor substrates. The method includes providing a semiconductor substrate characterized by a first lattice with a first structure and a first spacing. The semiconductor substrate has an overlying film of mat... | 04/08/2008 |
| 7341924 | Method for manufacturing semiconductor device A method of separating a lamination body with high yield without damaging the lamination body is provided. Further, a method of manufacturing a lightweight, flexible semiconductor device, which is thin in total is provided. The method of manufacturing the semiconduc... | 03/11/2008 |
| 7325404 | Exposure apparatus An exposure apparatus includes an optical system for guiding light to an object, a holding member for holding the object, a first refrigerator located near a holding side of the holding member without contacting the holding side, and a second refrigerator located ne... | 02/05/2008 |
| 7307004 | Method with mechanically strained silicon for enhancing speed of integrated circuits or devices A method with a mechanically strained silicon for enhancing the speeds of integrated circuits or devices is disclosed. The method with a mechanically strained silicon for enhancing the speeds of integrated circuits or devices includes the following steps: (a) provid... | 12/11/2007 |
| 7307005 | Wafer bonding with highly compliant plate having filler material enclosed hollow core The present invention discloses a method that includes: providing two wafers; forming raised contacts on the two wafers; aligning the two wafers; bringing together the raised contacts; locally deflecting the two wafers; and bonding the raised contacts. The pr... | 12/11/2007 |
| 7303976 | Wafer bonding method One embodiment of a micro-electronic device includes a substrate including micro-electronic components thereon, and a cover including a ring of sealing material secured to the substrate and a raised ring of material positioned opposite the cover from the ring of sea... | 12/04/2007 |
| 7279358 | Mounting method and mounting device A mounting method includes the steps of, after positioning objects being bonded relative to each other, moving a movable wall positioned there around until coming into contact with one object holding means to form a local chamber having a local enclosed space, enclo... | 10/09/2007 |
| 7276429 | Method and apparatus for producing ultra-thin semiconductor chip and method and apparatus for producing ultra-thin back-illuminated solid-state image pickup device A method for producing an ultra-thin semiconductor chip and an ultra-thin back-illuminated solid-state image pickup device utilizing a semiconductor layer formed on a support substrate via an insulating layer to improve separation performance of a semiconductor laye... | 10/02/2007 |
| 7273797 | Methods of forming semiconductor-on-insulator constructions The invention encompasses a method of forming a semiconductor-on-insulator construction. A substrate is provided. The substrate includes a semiconductor-containing layer over an insulative mass. The insulative mass comprises silicon dioxide. A band of material is fo... | 09/25/2007 |
| 7265028 | Method for producing dislocation-free strained crystalline films A method for forming dislocation-free strained silicon thin film includes the step of providing two curved silicon substrates. One substrate is curved by the presence of silicon dioxide on a back surface. The other substrate is curved by the presence of a silicon ni... | 09/04/2007 |
| 7265417 | Method of fabricating semiconductor side wall fin A double gated silicon-on-insulator (SOI) MOSFET is fabricated by forming epitaxially grown channels, followed by a damascene gate. The double gated MOSFET features narrow channels, which increases current drive per layout width and provides low out conductance.... | 09/04/2007 |
| 7262112 | Method for producing dislocation-free strained crystalline films A method for forming dislocation-free strained silicon thin film includes the step of providing two curved silicon substrates. One substrate is curved by the presence of silicon dioxide on a back surface. The other substrate is curved by the presence of a silicon ni... | 08/28/2007 |
| 7259080 | Glass-type planar substrate, use thereof, and method for the production thereof The invented method is distinguished by a combination of the following method steps: provision of a semiconductor planar substrate composed of a semiconductor material, reduction of the thickness of the semiconduct... | 08/21/2007 |
| 7256108 | Method for reducing semiconductor die warpage An anti-warpage backgrinding tape (11) is secured to the circuit side (12) of a semiconductor wafer (14). The backside (16) of the wafer is background. The backside of the wafer is secured to dicing tape (18) so that the anti-warpa... | 08/14/2007 |
| 7244636 | Semiconductor assembly for improved device warpage and solder ball coplanarity A semiconductor device with a chip (505), its position defining a plane, and an insulating substrate (503) with first and second surfaces; the substrate is substantially coplanar with the chip, without warpage. One of the chip sides is attached to the ... | 07/17/2007 |
| 7238543 | Methods for marking a bare semiconductor die including applying a tape having energy-markable properties A method used for marking a semiconductor wafer or device. The method and apparatus have particular application to wafers or devices which have been subjected to a thinning process, including backgrinding in particular. The present method comprises reducing the cros... | 07/03/2007 |
| 7238985 | Trench type mosgated device with strained layer on trench sidewall A MOSgated trench device has a reduced on resistance by forming a less than about a 13 nm thick strained SiGe layer on the silicon surface of the trenches and forming a thin (30 nm or less) layer of epitaxially deposited silicon on the SiGe layer which epi layer is ... | 07/03/2007 |
| 7235462 | Methods for fabricating a substrate A method is provided for fabricating a substrate for optics, electronics, or opto-electronics. This method includes the steps of implanting atomic species into a face of a source substrate to form a weakened zone therein corresponding to the depth of penetration of ... | 06/26/2007 |
| 7235427 | Method for treating substrates for microelectronics and substrates obtained by said method An embodiment of a multilayer wafer according to the invention includes a base substrate, a first layer associated with the base substrate, and a second layer on the first layer on side opposite from the base substrate in an axial direction and having a lateral edge... | 06/26/2007 |
| 7220656 | Strained semiconductor by wafer bonding with misorientation One aspect of the present invention relates to a method for forming a strained semiconductor structure. In various embodiments, at least two strong bonding regions are defined for a desired bond between a crystalline semiconductor membrane and a crystalline semicond... | 05/22/2007 |
| 7199025 | Fabrication and assembly structures and methods for memory devices The present invention provides for a common substrate with multiple sections, each constituting a separate layer of a memory device. Fold lines are arranged on the substrate to define separate sections and to provide a means for folding the sections on each other to... | 04/03/2007 |
