Class 438/445 - Masking of groove sidewall

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Process utilizing a layer in contact with the groove sidewalls
No. of patents: 171
Last issue date: 04/16/2013

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Number	Title	Issue Date
5538916	Method of manufacturing semiconductor device isolation region The present invention aims to prevent formation of a bird's beak and a bird's head in forming a miniaturized element isolation oxide film, and to suppress introduction of a defect into a silicon substrate. A first silicon oxide film is formed on the surfa...	07/23/1996
5510290	Method for forming a field oxide layer in a semiconductor device which prevents bird beak by nitradation of pad oxide A method for forming a field oxide layer in a semiconductor device comprising the steps of: forming a pad oxide layer and a first resistant layer of oxidation, in turn, on a substrate; opening a field region by etching a portion of the said resistant laye...	04/23/1996
5504034	Local oxidation method with bird's beak suppression A method for eliminating the bird's beak from selective oxidations of semiconductor electronic devices having a semiconductor substrate (1) which is covered by a pad oxide layer (2) covered, in turn, by a first layer (3) of nitride, and wherein at least o...	04/02/1996
5498566	Isolation region structure of semiconductor device and method for fabricating the same An isolation region structure of a semiconductor device and a method for fabricating the same using both a buried oxide isolation technique and a local oxidation of silicon technique, thereby capable of having an advantage of high integrity. In the isolat...	03/12/1996
5472906	Method of forming isolation A first underlaid oxide layer, a polysilicon layer, and a first silicon nitride layer are formed on a silicon substrate in this order. Using a photoresist as a mask, a portion of the first silicon nitride layer, the polysilicon layer, the first underlaid ...	12/05/1995
5472904	Thermal trench isolation A process useful for isolating active areas of semiconductor devices in which an isolation trench is created in a substrate, the isolation trench being lined with an oxidation barrier and filled with a thick film. An oxidation step is performed in which t...	12/05/1995
5457067	Process for formation of an isolating layer for a semiconductor device A process for formation of an isolating layer for a semiconductor device is disclosed. During formation of a field isolating layer, a pad oxide layer is formed which is intended to buffer the difference of the thermal expansion rates between the silicon s...	10/10/1995
5403770	Method for forming a field oxide film in a semiconductor device A method for forming a field oxide film in a semiconductor device, wherein the field oxide film is integral with a nitride film disposed on an active region, thereby preventing spacers formed from being easily spread on the upper surface of the nitride fi...	04/04/1995
5399520	Method for the formation of field oxide film in semiconductor device There are disclosed methods for the formation of field oxide film in a semiconductor device. By the methods, a field oxide film which plays a role of insulation for the separation of device, is formed in a trench formed in a semiconductor substrate. In th...	03/21/1995
5397733	Method for the construction of field oxide film in semiconductor device Methods for the construction of field oxide film is disclosed. The methods facilitates the control of the length and thickness of L-shaped spacer, overcoming some difficulties in processing a semiconductor device. Thus, the stresses and defects of semicon...	03/14/1995
5395790	Stress-free isolation layer A method of fabricating a stress-free isolation layer for semiconductor integrated circuit that solves the problems of crystalline defects and the degraded characteristics of devices due to the presence of structural stresses. Partial trench etching is em...	03/07/1995
5393693	"Bird-beak-less" field isolation method A method of forming field oxide isolation regions for submicron technology using oxygen implantation is described. A first insulating layer is formed over a silicon substrate. A second insulating layer is formed over the first insulating layer. A first op...	02/28/1995
5374584	Method for isolating elements in a semiconductor chip A method for isolating elements in a silicon semiconductor device is disclosed. The invention discloses the steps of: (1) forming a thermal silicon oxide layer on a silicon substrate, depositing a layer of polysilicon, and depositing a first silicon nitri...	12/20/1994
5372950	Method for forming isolation regions in a semiconductor memory device A method for forming an isolation region within a semiconductor device is disclosed. A trench is first formed in a predefined isolation region of a semiconductor substrate. An oxidation blocking material is injected into the inside walls of the trench bef...	12/13/1994
5371036	Locos technology with narrow silicon trench A new method of local oxidation by means of stress-releasing narrow trenches is described. Pad silicon oxide, silicon nitride, and silicon dioxide layers are formed on a silicon substrate. Portions of these layers not covered by a mask are etched away to ...	12/06/1994
5256895	Pad oxide protect sealed interface isolation Field oxide regions are formed between drive regions of a silicon substrate by forming over the substrate a sandwich of silicon dioxide, silicon nitride and silicon dioxide layers, opening the layers to expose a portion of the silicon substrate, removing ...	10/26/1993
5248350	Structure for improving gate oxide integrity for a semiconductor formed by a recessed sealed sidewall field oxidation process A process for forming field oxide regions between active regions in a semiconductor substrate. Pad oxide, polysilicon and first silicon nitride layers are successively formed over substrate active regions. The first nitride layer, polysilicon layer, pad o...	09/28/1993
5246537	Method of forming recessed oxide isolation A method requiring only a single mask results in an isolation oxide (50) which is the same size as, instead of becoming larger than, the dimension originally defined by the lithographic system. A buffer layer (14) is formed over the substrate (12). An oxi...	09/21/1993
5242854	High performance semiconductor devices and their manufacture A high performance bipolar transistor and a method of fabrication. Base resistance is reduced by a self-aligned silicide formed in the single-crystal region of the extrinsic base, thereby eliminating the polysilicon to single-crystal contact resistance as...	09/07/1993
5229318	Process for buried localized oxidation of a silicon substrate and corresponding integrated circuit The invention relates to a process for buried localized oxidation of a silicon substrate. The process consists in performing a) a sealing on the surface of the substrate (S), by a first nitriding, by growing a later of silicon nitride forming at least one...	07/20/1993
5182227	Semiconductor device and method for manufacturing the same MOS transistors connected to each other are electrically isolated at both ends of a transfer gate by an LOCOS oxide film, and the bottom surface in a trenched capacitor portion and the side wall of a trench between adjacent capacitors are electrically iso...	01/26/1993
5173444	Method for forming a semiconductor device isolation region A method for forming a semiconductor device isolation region including steps of forming a first silicon oxide film on a silicon substrate, depositing a first silicon nitride film over the first silicon oxide film, and removing the first silicon oxide film...	12/22/1992
4986879	Structure and process for forming semiconductor field oxide using a sealing sidewall of consumable nitride An integrated circuit structure and fabrication process for creating field oxide regions having substantially no bird's beak, a relatively planar concluding surface, substantially no stress induced dislocations at the edges of the active regions, and a su...	01/22/1991
4981813	Pad oxide protect sealed interface isolation process Field oxide regions are formed between active regions of a silicon substrate by forming over the substrate a sandwich of silicon dioxide, silicon nitride and silicon dioxide layers, opening the layers to expose a portion of the silicon substrate, removing...	01/01/1991
4923563	Semiconductor field oxide formation process using a sealing sidewall of consumable nitride An integrataed circuit fabrication process for creating field oxide regions having substantially no bird's beak, a relatively planar concluding surface, substantially no stress induced dislocations at the edges of the active regions, and a substantial abs...	05/08/1990
4909897	Local oxidation of silicon process A LOCOS process, a process of the type wherein a capped recessed mesa structure (1,3) is defined in single crystal, semiconductor grade, silicon and thereafter, and in the presence of the capping layers (5,7), local oxide (13) is thermally grown to provid...	03/20/1990
4892614	Integrated circuit isolation process A multiple recess isolation technology avoids stress induced defects while providing a substantially planar surface. A silicon substrate (10) is patterned and etched, creating active moat regions (18) and recesses (20a-b and 21a-b). the recesses are fille...	01/09/1990
4863562	Method for forming a non-planar structure on the surface of a semiconductor substrate A method for increasing the width of a transistor includes first forming a nitride cap (14) over the substrate (10) and then forming trenches (24) and (26) on either side of the cap (14) and having tapered sidewalls (28) and (30). A conformal layer of nit...	09/05/1989
4845048	Method of fabricating semiconductor device A method of fabricating a semiconductor device which includes: (1) a step of forming an opening in a silicon substrate using a first silicon oxide film and a first silicon nitride film formed on the silicon substrate as masks, (2) a step of forming a second si...	07/04/1989
4772569	Method for forming oxide isolation films on french sidewalls In a method according to the present invention for forming isolation oxide films (14) on a silicon substrate (11) having trenches and islands bounded by the trenches, the isolation oxide films are simultaneously formed in the island regions and in the sid...	09/20/1988
4692996	Method of fabricating semiconductor devices in dielectrically isolated silicon islands A semiconductor device comprising a semiconductor silicon substrate, a silicon oxide layer formed on the substrate, and at least one semiconductor device region formed within the silicon oxide layer, wherein the semiconductor device region is generally V-...	09/15/1987
4685198	Method of manufacturing isolated semiconductor devices Disclosed is a method of isolating a transistor perfectly by employing a selective oxidation technology (LOCOS technology). More particularly, vertical openings are formed in the surface of {100} silicon substrate, and oxidation resistant films are formed...	08/11/1987
4641416	Method of making an integrated circuit structure with self-aligned oxidation to isolate extrinsic base from emitter The invention comprises an improved integrated circuit structure wherein an active device is formed in a silicon substrate for forming an intrinsic base region over a buried collector and an emitter is formed on the intrinsic base region to comprise three...	02/10/1987
4635344	Method of low encroachment oxide isolation of a semiconductor device A low temperature, low encroachment isolation technique using differential oxidation results in an isolated semiconductor body having an N+ substrate (12) and an N epi layer (14) forming a mesa. N+ implants (22a) and (22b) are implanted on opposite sides ...	01/13/1987
4622096	Method of manufacturing a semiconductor device comprising a silicon body, in which a sunken oxide layer is locally provided The method of the present invention involves the forming of a depression with sidewalls extending below a first oxidation mask provided on a surface of a silicon body. Subsequently, after the sidewalls of the depression have been provided with a second ox...	11/11/1986
4597164	Trench isolation process for integrated circuit devices Isolation trenches are formed around selected areas on an integrated circuit device, and highly doped areas are formed in the epitaxial silicon surrounding such trenches. The device is then oxidized at a low temperature, and differential oxidation growth ...	07/01/1986
4583281	Method of making an integrated circuit A method of forming in a silicon substrate an active region bounded by a field of silicon dioxide is described. On top of a mesa formed in the silicon substrate is provided a three layered structure including a first thin layer of silicon dioxide in conta...	04/22/1986
4580330	Integrated circuit isolation An integrated circuit isolation technology wherein the nitride-sidewall methods of the prior art are improved by performing an undercut and backfill before the second nitride (the sidewall nitride which prevents encroachment) is added to the first nitride...	04/08/1986
4563227	Method for manufacturing a semiconductor device The invention provides a method for manufacturing a semiconductor device, wherein a semiconductor substrate is vertically etched to form a groove, antioxidant insulating films are formed on the side walls of the groove, and local oxidation is performed. L...	01/07/1986
4561932	Method of producing integrated silicon structures on isolated islets of the substrate A method for manufacturing integrated circuits is provided in which monocrystalline silicon islets are formed completely isolated from the substrate itself made from monocrystalline silicon, by a thick oxide layer. This thick oxide layer is formed in the ...	12/31/1985

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Class 438/445 - Masking of groove sidewall