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A fork with timer for providing a cue to a user after an elapsed period of time for indicating that another bite of food using the fork may be taken.
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| Number | Title | Issue Date |
| 4137107 | Method of manufacturing a semiconductor device utilizing selective masking, deposition and etching The invention relates to a method in which a system of layers with a contact layer of gallium arsenide is formed epitaxially. In a second epitaxy treatment a layer of gallium aluminum arsenide is formed selectively. In order not to form the latter layer o... | 01/30/1979 |
| 4099999 | Method of making etched-striped substrate planar laser A method of making a diode laser in which a pump current confining channel is formed on the substrate side of a diode laser prior to growth of the active or recombination region of the diode laser. The current confining channel is formed by providing, by ... | 07/11/1978 |
| 4033796 | Method of making buried-heterostructure diode injection laser A method of making a buried-heterostructure (BH) diode injection laser capable of operating at low room temperature thresholds and in the lowest order TE, TM, or TEM modes. Following formation of a pump current confining layer in a substrate, an elongated... | 07/05/1977 |
| 4029531 | Method of forming grooves in the [011] crystalline direction An A-B etchant is applied to a (100) surface of a body of semiconductor material, a portion of which along the (100) surface of the body is either gallium arsenide or gallium aluminum arsenide. The etchant is applied for at least 15 seconds at a temperatu... | 06/14/1977 |
| 3998672 | Method of producing infrared luminescent diodes A recess is formed in one of the principal surfaces of an N-type substrate of GaAs. Through the liquid phase growth technique, a silicon-doped N-type GaAs layer is formed on the one of the principal surfaces and on the surface of the recess and a silicon-... | 12/21/1976 |
| 3978428 | Buried-heterostructure diode injection laser A buried-heterostructure (BH) diode injection laser capable of operating at low room temperature thresholds and in the lowest order TE, TM or TEM modes. The laser has an elongated groove in a substrate with the groove extending through a pump current conf... | 08/31/1976 |
