Did You Know...
...that in 1800 ether was first used by partyers as a fun diversion? Sniffing the gas led to hilarious and raucous laughter as people watched each other become more and more intoxicated and silly. Several doctors independently realized the value ether would have to anesthetize surgery patients. Of those who claimed rights to the "discovery," none had a happy ending. One had a seizure and died defending his rights. Another spent his life in an asylum because he had been denied acclaim. A third became addicted to chloroform and, in a New York City jail, he soaked a cloth in the drug, severed an artery and bled to death.
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| Number | Title | Issue Date |
| 5266503 | Method of making a surface emitting laser with oxygen ion implants followed by epitaxial regrowth A surface emitting laser diode device is disclosed where an active layer is implanted with oxygen ions except for a small active region. The active region includes a pn junction for generating radiation in response to passage of electrical current thereth... | 11/30/1993 |
| 5258316 | Patterened mirror vertical cavity surface emitting laser VCSELs including a central active layer with upper and lower mirror stacks wherein a circular trench is formed in one mirror stack to define a lasing area. The trench reduces reflectivity to prevent lasing outside the operating area and an oxygen implant ... | 11/02/1993 |
| 5156988 | A method of manufacturing a quantum interference semiconductor device A method of making a quantum interference semiconductor device comprising the steps of forming a first semiconductor layer on a semi-insulating semiconductor substrate, forming a semi-insulating second semiconductor layer on the first semiconductor layer,... | 10/20/1992 |
| 5082799 | Method for fabricating indium phosphide/indium gallium arsenide phosphide buried heterostructure semiconductor lasers A semiconductor laser having a high modulation bandwidth is made by utilizing an InGaAsP cap layer and an InGaAsP active layer of different crystal structure. Channels are anisotropically etched through the cap, cladding and active layers and partially th... | 01/21/1992 |
| 4895615 | Monolithic fabrication techniques for front face optoelectronic couplers and/or optical components including ridge structured waveguides The invention involves a method for the monolithic fabrication of front face optoelectronic couplers and/or optical components (10) including a ridge structured waveguide (4) in which the light-coupling edges (2) of the component (10) using a mask in the ... | 01/23/1990 |
| 4843031 | Method of fabricating compound semiconductor laser using selective irradiation Disclosed is a method of fabricating a compound semiconductor device which is capable of forming a multi-wavelength semiconductor laser structure, double cavity type semiconductor laser structure, stripe type semiconductor laser structure transverse junct... | 06/27/1989 |
| 4839308 | Method of making an external-coupled-cavity diode laser A monolithic external-coupled-diode laser structure uses high reflectivity facet coatings to reduce the operating current and to improve suppression of unwanted longitudinal modes.... | 06/13/1989 |
| 4784722 | Method forming surface emitting diode laser A method and apparatus for forming a monolithic surface emitting laser diode array by providing vertical partly light transmissive mirror surfaces opposite parabolic light reflective mirror surfaces formed adjacent the active buried layer of a heterostruc... | 11/15/1988 |
| 4698129 | Focused ion beam micromachining of optical surfaces in materials A method of forming one or more optical surfaces of the designer's choice in a body of material. The method includes the steps of exposing in a work zone a selected face in a body of selected material, directing a focused ion beam in a predetermined manne... | 10/06/1987 |
| 4662988 | Semiconductor devices and their fabrication A method of selectively etching one semiconductor material layer (4) of a multilayer structure which underlies another layer, a top layer (1), of the same or a similar semiconductor material without significantly affecting the top layer (1). The method in... | 05/05/1987 |
| 4255755 | Heterostructure semiconductor device having a top layer etched to form a groove to enable electrical contact with the lower layer A semiconductor laser is made by sequential liquid-phase epitaxial growths on an n-type GaAs substrate, thereby sequentially forming a first layer of n-type GaAlAs, a second layer of n-type or p-type GaAs as active region, a third layer of p-type GaAlAs, said first... | 03/10/1981 |
| 4227975 | Selective plasma etching of dielectric masks in the presence of native oxides of group III-V compound semiconductors Plasma etching is described as a selective etch for dielectric masks such as SiO2, Si3 N4 and certain photoresists in the presence of native oxides of Group III-V compound semiconductors. This process can be used in the fa... | 10/14/1980 |
| 4086126 | Production of high radiance light emitting diodes For aligning holes in substrates with the light emitting regions of light emitting diodes, particularly Burrus type diodes, an etchant based on an alkaline peroxide solution is ejected or sprayed onto the masked surface of the substrate. The etchant is se... | 04/25/1978 |
| 3963537 | Process for the production of a semiconductor luminescence diode A process for producing semiconductor luminescence diodes wherein an epitaxial layer is deposited on a monocrystal composed of a semi-insulating semiconductor material, a portion of the monocrystal at least up to the level of the epitaxial layer is remove... | 06/15/1976 |
| 3936855 | Light-emitting diode fabrication process A method and structure are provided for the simplified batch fabrication of Gallium Arsenide-Aluminum Gallium Arsenide lightemitting diodes. A high aluminum content AlGaAs layer is formed on the GaAs substrate layer to provide an etch resistant mask, and ... | 02/03/1976 |
