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Microwave Oven With Removable Storage Cassette in Dashboard of Motor Vehicle
A microwave oven adapted for use within a motor vehicle dashboard area. The microwave oven has a removable storage cassette, and slidable platforms for securing and serving containers of beverages and foods.
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| Number | Title | Issue Date |
| 4426702 | Semiconductor laser device This invention consists in improvements in a buried-heterostructure laser with buried optical guide, and facilitates the oscillation of the laser in the fundamental mode thereof and also enhances the available percentage of production of the laser. An act... | 01/17/1984 |
| 4425650 | Buried heterostructure laser diode A buried heterostructure laser diode and method for making the same wherein an active layer is provided in a semiconductor region forming a mesa stripe, and, except for the top surface portion of the mesa stripe, the side surface portion of the mesa strip... | 01/10/1984 |
| 4404730 | Method of producing luminescent or laser diodes having an internally limited luminescent surface A luminescent or laser diode having a pn-junction surrounding an internally limited luminescent surface area and limiting current flow in the diode is produced by etching a select semiconductor substrate so as to produce a mesa dimensioned accordingly to ... | 09/20/1983 |
| 4404678 | Semiconductor laser device A semiconductor laser device of this invention has a built-in passive guiding mechanism along the junction plane by growing planar double hetero (DH) layers on a grooved or projected substrate. It operates stably in the lowest transverse mode and provides... | 09/13/1983 |
| 4366569 | Semiconductor laser device including an arrangement for preventing laser degradation caused by excessive current flow Disclosed herein is a semiconductor laser device including at least an active region consisting of a semiconductor material and a semiconductor region consisting of a material having a different composition from that of the active region and confining the... | 12/28/1982 |
| 4341010 | Fabrication of electroluminescent semiconductor device utilizing selective etching and epitaxial deposition An electroluminescent semiconductor device such as a semiconductor laser has epitaxial monocrystalline layers (3 to 6), including an active layer (4), grown on a substrate (2). The epitaxial layers are etched in the presence of an etching mask (8) to form... | 07/27/1982 |
| 4276098 | Batch processing of semiconductor devices Discrete InP-InGaAsP mesa double heterostructure lasers have been fabricated by a batch process in which the laser mirrors are formed by chemically etching the wafer from the top surface down into the substrate. A feature of the process is that the metal ... | 06/30/1981 |
| 4269635 | Strip buried heterostructure laser A double heterostructure laser having a pair of opposite-conductivity-type, wide bandgap cladding layers separated by a narrower bandgap active region is characterized in that the active region includes a low-loss waveguide layer and contiguous therewith ... | 05/26/1981 |
| 4215319 | Single filament semiconductor laser A body of semiconductor material of a Group III-V compound or alloy of such compounds includes a substrate of one conductivity type with a pair of spaced, substantially parallel, dove-tail shaped grooves in a surface thereof. Over the surface of the subst... | 07/29/1980 |
| 4213805 | Liquid phase epitaxy method of forming a filimentary laser device A semiconductor device of a filamentary laser is fabricated by a method including the steps of forming a first GaAlAs layer on a GaAs body, forming a laser active layer of GaAs on the first GaAlAs layer, etching the first GaAlAs layer and the laser active... | 07/22/1980 |
| 4194933 | Method for fabricating junction lasers having lateral current confinement Described is a method for fabricating a stripe geometry double heterostructure (DH) junction laser in which lateral current confinement is acheived by pairs of laterally spaced, reverse-biased p-n junctions. A mesa is formed on an n-GaAs substrate, for ex... | 03/25/1980 |
| 4185256 | Mode control of heterojunction injection lasers and method of fabrication Mode control both for longitudinal and fundamental transverse modes can be achieved by employing a mesa structure on the laser substrate during fabrication. The mesa will provide significant variations in the thickness of one or more heterostructure waveg... | 01/22/1980 |
| 4169009 | Large area microstructure processing A plurality of different monolithic, three-dimensional thin-film infared waveguide structures having high optical power handling capability, low optical propagating loss, long propagation and interaction length and distortion-free characteristics are fabr... | 09/25/1979 |
| 4121177 | Semiconductor device and a method of fabricating the same A semiconductor device of a filamentary laser is fabricated by a method including the steps of forming a first GaAlAs layer on a GaAs body, forming a laser active layer of GaAs on the first GaAlAs layer, etching the first GaAlAs layer and the laser active... | 10/17/1978 |
| 4099305 | Fabrication of mesa devices by MBE growth over channeled substrates Parallel channels are separated by ridges formed in a semiconductor body in such a way that each channel is wider at its base than at its top. Molecular beam epitaxy is used to deposit semiconductor layers on the ridges and in the channels. Because each c... | 07/11/1978 |
| 4094752 | Method of manufacturing opto-electronic devices A method of manufacturing opto-electronic semiconductor devices. The method is characterized in that the material is AsAlx Ga1-x in which the molar proportion x is lower than 0.3, in that the material is stratified in different layers, an... | 06/13/1978 |
| 4080245 | Process for manufacturing a gallium phosphide electroluminescent device When gallium phosphide is etched with hot phosphoric acid from the surface of a crystal having a (1 1 1) plane, the etched surface becomes a flat and smooth plane inclined at an angle of 45° to 55° to the (1 1 1) plane. Accordingly, when an electrolumin... | 03/21/1978 |
| 3998662 | Migration of fine lines for bodies of semiconductor materials having a (100) planar orientation of a major surface Metal wires of widths as small as 10 microns are successfully migrated by thermal gradient zone melting processing as a molten zone through a body of semiconductor material. The metal wires are migrated to a preselected depth without use of oxide masking ... | 12/21/1976 |
