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| Number | Title | Issue Date |
| 4865684 | Process for producing a semiconductor laser mirror by ionic machining A semiconductor (10) is subject to ionic etching (14) through a mask, whereof one side determines the location of the mirror. This mask is constituted by a crystalline layer (12), whereof the side (16) is a crystallographic plane.... | 09/12/1989 |
| 4855255 | Tapered laser or waveguide optoelectronic method A method and apparatus for forming tapered thickness and material content of III-V material, or alloys thereof, in particular GaAs and AlGaAs, by gradient thermal heating of substrates during epitaxial growth and the optoelectronic structures formed there... | 08/08/1989 |
| 4851368 | Method of making travelling wave semi-conductor laser A triangular ring laser utilizing total internal reflection at two angled facets and a preselected amount of reflection at a third angled facet is disclosed. Partial transmission occurs through the third facet to reduce the threshold current required for ... | 07/25/1989 |
| 4797179 | Fabrication of integral lenses on LED devices Integrated lenses are fabricated on LED devices by chemical etching mesas through mask openings which are non-circular. The mask is removed and the mesas are then etched to form spherical lenses.... | 01/10/1989 |
| 4784722 | Method forming surface emitting diode laser A method and apparatus for forming a monolithic surface emitting laser diode array by providing vertical partly light transmissive mirror surfaces opposite parabolic light reflective mirror surfaces formed adjacent the active buried layer of a heterostruc... | 11/15/1988 |
| 4769342 | Method for making a semiconductor laser by cleaving a cantilever heterostructure A semiconductor laser device comprises a substrate (7) formed of p type GaAs, a laser diode portion (10) capable of laser oscillation and a monitor photodiode portion (11) capable of photoelectric conversion formed on substrate (7). The laser diode portio... | 09/06/1988 |
| 4758532 | Method for making a heterostructure semiconductor laser device by pressure cleaving of a cantilever structure A semiconductor laser device comprises a substrate (7) formed of p type GaAs, a laser diode portion (10) capable of laser oscillation and a monitor photodiode portion (11) capable of photoelectric conversion formed on substrate (7). The laser diode portio... | 07/19/1988 |
| 4728628 | Method of making ridge waveguide lasers A semiconductor device comprises a base semiconductor portion and, thereon, first and second elevated semiconductor portions separated by a channel. The uppermost surface of the first elevated semiconductor portion carries a metal electrical contact layer... | 03/01/1988 |
| 4670093 | Method for manufacturing a surface grating of a defined grating constant on regions of a mesa structure A method for manufacturing a surface grating on a mesa structure of a laser includes etching a substrate surface by wet-chemical etching to form a surface grating of defined grating constant, masking regions of the surface grating corresponding to the mes... | 06/02/1987 |
| 4661175 | Method of making InGaAsP and InGaAs double hetero-structure lasers and LEDs A method is provided for manufacturing a double hetero-structure of InGaAsP/InP, or, alternatively of InGaAs/InP, for use in lasers and LEDs by means of liquid phase epitaxy. The resulting structures emit optical radiation up to a wavelength of about 1.7 ... | 04/28/1987 |
| 4647339 | Production of semiconductor devices Onto the surface of an initial semiconductor structure 1, 2, 3, 4 is deposited a layer of an organic material 5 having a window 9. Layers 6', 7', and 8' are deposited on the exposed surface of the semiconductor, of which 8' is an ion-beam resisting materi... | 03/03/1987 |
| 4640737 | Dry etching method of compound semiconductor A compound semiconductor is dry-etched by introducing a plasma-generating gas comprising boron trichloride and chlorine into a plasma generation region which is defined between a cathode for supporting a workpiece comprising a compound semiconductor and a... | 02/03/1987 |
| 4575919 | Method of making heteroepitaxial ridge overgrown laser A method of making a ridge waveguide laser with the ridge being grown through a stripe opened in an oxide layer covering one of the cladding layers is described. In one embodiment, the cladding layer is corrugated and the ridge waveguide laser is a distri... | 03/18/1986 |
| 4468850 | GaInAsP/InP Double-heterostructure lasers A method and apparatus is described wherein a buried double heterostructure laser device is formed utilizing epitaxial layers of quaternary III-V alloys of gallium indium arsenide phosphide and wherein the buried layer is formed by first etching the p-typ... | 09/04/1984 |
| 4400256 | Method of making layered semiconductor laser A method for making a thin film layered semiconductor laser which includes depositing layers of semiconductor and electrical lead materials on an undoped semiconductor substrate and heating each layer of the semiconductor material after it has been deposi... | 08/23/1983 |
| 4264381 | Fabrication of injection lasers utilizing a porous host diffusion layer Porous silica doped with zinc is used as a p-type dopant source in the construction of rib lasers. Other modifications include allowing the zinc diffusion to go right through the active layer and to dimension the device so that lateral optical guidance is... | 04/28/1981 |
| 4230997 | Buried double heterostructure laser device A buried double heterostructure laser device isdescribed. A wafer of double heterostructure material is formed into narrow mesa stripes. A native oxide coating is formed on the side walls of the mesa. Semiconductor material having an index of refraction w... | 10/28/1980 |
| 4210466 | Process for preparing heat sensitive semiconductor switch A process for preparing heat sensitive semiconductor switch which switches from OFF state to ON state at relatively low temperature. In a heat sensitive thyristor having PNPN four layer structure, an N type base region is exposed at one part of the surface exp... | 07/01/1980 |
| 4206468 | Contacting structure on a semiconductor arrangement A semiconductor laser with a substrate made of gallium arsenide and layers, epitaxially grown upon the substrate. The upper layer is covered partially by a rib of gallium arsenide and carries one electrical current.... | 06/03/1980 |
| 4188244 | Method of making a semiconductor light-emitting device utilizing low-temperature vapor-phase deposition In order to decrease threshold current of a semiconductor laser, and to obtain a single mode lasing suitable for use in light-communication, the semiconductor laser is formed in stripe type in which the light-emitting (i.e., active) layer and neighboring ... | 02/12/1980 |
| 4111725 | Selective lift-off technique for fabricating GaAs FETs MBE growth of epitaxial layers on selected areas of a growth surface (e.g., wafer or epi-layer grown thereon) is achieved by masking portions of the surface with an amorphous material and directing molecular beams at the masked surface so that a polycryst... | 09/05/1978 |
| 4077817 | Making a semiconductor laser structure by liquid phase epitaxy A semiconductor laser structure has side facets perpendicular to its substrate and a flat top. The central cavity is an elongated rectangular cavity. A substrate having (100) orientation has a mask patterned thereon with a window having an elongated centr... | 03/07/1978 |
| 4011113 | Method of making injection lasers by epitaxial deposition and selective etching A double heterostructure injection laser has its active layer close to the surface. A rib protruding from that surface provides lateral optical confinement of laser radiation propagating in the active layer under the rib.... | 03/08/1977 |
