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Combination Beverage Container and Spittoon
A combination beverage container and spittoon includes a bottom portion including outer wall and a first inner wall defining a spittoon space.
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| Number | Title | Issue Date |
| 5474954 | Method of manufacturing semiconductor laser diode using self alignment A manufacturing method of a semiconductor laser diode is disclosed in which a current cutoff layer is formed on the wall of a first metal layer by a low-temperature process such as plasma-enhanced chemical vapor deposition and the gas composition ratio of... | 12/12/1995 |
| 5472907 | Method of manufacturing an optoelectronic semiconductor device A method of manufacturing an optoelectronic semiconductor device includes the step of providing two comparatively thin layers next to one another on a substrate by means of a non-selective growing process, an etching process, and a selective growing proce... | 12/05/1995 |
| 5472886 | Structure of and method for manufacturing an LED An LED has both its p and n bonding pads on the p side of the wafer for simultaneous solder bump alignment and electrical connection of the LED with a device carrier. A groove is formed dividing the p material of the device into an active region and an in... | 12/05/1995 |
| 5454915 | Method of fabricating porous silicon carbide (SiC) Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in t... | 10/03/1995 |
| 5452383 | Optical switch and method for producing the optical switch An optical switch includes a semiconductor substrate having a surface, a ridge waveguide disposed on the surface of the semiconductor substrate and including an optical waveguide layer having an MQW structure, first and second cladding layers sandwiching ... | 09/19/1995 |
| 5419804 | Semiconductor etching process A process for plasma etching a compound semiconductor heterostructure, e.g. to fabricate a ridge laser on a wavelength demultiplexer comprises anisotropic etching of the semiconductor by exposure to a plasma incorporating methane, hydrogen and oxygen. The... | 05/30/1995 |
| 5416044 | Method for producing a surface-emitting laser A method for producing a surface-emitting laser, includes the steps of: forming a mask pattern to define a top mirror on a semiconductor substrate, the semiconductor substrate having a first semiconductor multilayer formed on the semiconductor substrate, ... | 05/16/1995 |
| 5404370 | Planar light emitting device having a reduced optical loss A planar laser diode includes a substrate, a first multilayer structure on the substrate and formed of an alternate stacking of a first epitaxial layer and a second epitaxial layer, a cavity structure provided on the first multilayer structure and includi... | 04/04/1995 |
| 5390210 | Semiconductor laser that generates second harmonic light with attached nonlinear crystal A semiconductor laser with a nonlinear crystal that generates second harmonic light at a frequency which is twice the fundamental frequency of the laser. The laser is configured in a vertical-cavity, surface-emitting structure or an edge-emitting structur... | 02/14/1995 |
| 5382543 | Semiconductor device manufacturing method capable of correctly forming active regions In a method of manufacturing a semiconductor device, first strip dielectrics (33) and surfaces (35) were formed by taking first strip parts (31) of a dielectric layer (29) away from a principal surface (13) of a semiconductor substrate (11) in parallel by... | 01/17/1995 |
| 5376581 | Fabrication of semiconductor laser elements In a process for fabricating a semiconductor laser by forming a double-heterostructure made up of a first cladding layer, an active layer and a second cladding layer on a semiconductor substrate at the first growth step, forming protecting films for selec... | 12/27/1994 |
| 5374587 | Method of manufacturing optical semiconductor element In a method of manufacturing an optical semiconductor element including at least the steps of forming a mask having a stripe-like gap or interval on a semiconductor substrate, epitaxially growing a semiconductor ridge including an active layer on only an ... | 12/20/1994 |
| 5358898 | Method of making a tunable laser diode having a distributed feedback structure A distribution feedback laser diode, comprises a substrate, a waveguide layer provided on the substrate, an active layer provided on the waveguide layer, a diffraction grating provided at an interface between the substrate and the waveguide layer for refl... | 10/25/1994 |
| 5359618 | High efficiency VCSEL and method of fabrication A high efficiency vertical cavity surface emitting laser with first and second mirror stacks and an active area sandwiched therebetween. The second mirror stack is formed into a mesa with exposed end surface and outer sidewalls and a centrally located lig... | 10/25/1994 |
| 5358880 | Method of manufacturing closed cavity LED A method of manufacturing a closed cavity LED including forming, on a substrate, a short cavity LED with electrically conductive layers on opposite ends. Depositing a transparent conductive layer of material over one electrically conductive layer and affi... | 10/25/1994 |
| 5346581 | Method of making a compound semiconductor device In a preferred embodiment, the disclosed method of making a compound semiconductor (e.g., InP, GaAs) device comprises etching of a semiconductor body by exposure of the body to a chemical beam or beams that comprise an etching medium (e.g., PCl3 | 09/13/1994 |
| 5334551 | Method of making semiconductor optical guided-wave device A semiconductor optical guided-wave device which makes quantization and integration possible and which is fine in structure and low in loss is provided, which comprises a semiconductor substrate, at least one ridge type semiconductor optical waveguide for... | 08/02/1994 |
| 5317587 | VCSEL with separate control of current distribution and optical mode A VCSEL formed on a substrate with an upper mirror stack etched to form a mesa shaped area with material positioned on the upper mirror stack including optically transparent, electrically conductive material defining an electrical contact window to contro... | 05/31/1994 |
| 5316968 | Method of making semiconductor surface emitting laser The present applicant has discovered that one can make a surface emitting laser with enhanced operating characteristics by etching away the outer reflector stack peripheral to the intended active area and protecting the reflector stack mesa remaining over... | 05/31/1994 |
| 5313484 | Quantum box or quantum wire semiconductor structure and methods of producing same A quantum box semiconductor structure in which truncated triangular, or quadrilateral, pyramid base portions are formed on the main surface of a silicon semiconductor substrate defined, selectively, by a (111) B or a (100) plane; the triangular, or quadri... | 05/17/1994 |
| 5300452 | Method of manufacturing an optoelectronic semiconductor device A method of manufacturing an optoelectronic semiconductor device whereby a surface (1) of a semiconductor (2) built up from a number of layers of semiconductor material (4, 5, 6, 7) grown epitaxially on a semiconductor substrate (3), with a top layer (4) ... | 04/05/1994 |
| 5293392 | Top emitting VCSEL with etch stop layer A top emitting vertical cavity surface emitting laser with an etch stop layer positioned in the top mirror stack so the stack can be etched to form a trench surrounding a mesa with the emitting area on the mesa and the trench confining current flow and la... | 03/08/1994 |
| 5283209 | Method of localized treatment on a projection, in particular for lithographic etching on a semiconductor substrate In the method, a protective resist (108) used for lithographic etching is caused to flow plastically under the constraint of its surface tension, thereby increasing its thickness around a projection (106) on which a window (104) is to be formed. The inven... | 02/01/1994 |
| 5256596 | Top emitting VCSEL with implant VCSELs including a central active layer with upper and lower mirror stacks wherein a circular trench is formed in one mirror stack to define a lasing area. The trench reduces reflectivity to prevent lasing outside the operating area and a deep beryllium i... | 10/26/1993 |
| 5256580 | Method of forming a light emitting diode An optical semiconductor device is formed by using one controlled etch to form a "T" shaped contact structure on the device (20). The etch rate is controlled by judicious selection of materials to provide a cladding layer (17) that has a predetermined etc... | 10/26/1993 |
| 5237639 | Optical waveguide formed of compound semiconductor materials and process of fabricating the optical waveguide An optical waveguide is fabricated on a substrate of n-type indium phosphide, and comprises a guiding layer of intentionally undoped indium gallium arsenide sandwiched between lower and upper cladding layers of intentionally undoped indium phosphide, wher... | 08/17/1993 |
| 5182228 | Method of manufacturing a semiconductor light-emitting device In a ridge waveguide-type semiconductor light-emitting device, a buried layer is composed of a high-resistance semiconductor material (e.g., amorphous silicon), thereby improving the heat-dissipating characteristic and prolonging lifetime. The buried laye... | 01/26/1993 |
| 5158908 | Distributed Bragg reflectors and devices incorporating same Distributed Bragg Reflectors of high efficacy based on alternating layers of large difference in refractive index are fabricated by epitaxial growth followed by etchant removal and back-filling to produce a structure in which alternation is between layers... | 10/27/1992 |
| 5143863 | Method of manufacturing semiconductor laser According to the structure of the invention, an AlGaInP cladding layer of one conductive type, an active layer, and an AlGaInP cladding layer of other conductive type greater in thickness in stripes are formed on a GaAs substrate, and an insulating film, ... | 09/01/1992 |
| 5084742 | Light emitting diode and its array and method of making the same A light emitting diode and its array having improved light emitting efficiency are disclosed. A first layer of a semiconductor material of a first conductivity type and a second layer of a semiconductor material of a second conductivity type are formed on... | 01/28/1992 |
| 5082799 | Method for fabricating indium phosphide/indium gallium arsenide phosphide buried heterostructure semiconductor lasers A semiconductor laser having a high modulation bandwidth is made by utilizing an InGaAsP cap layer and an InGaAsP active layer of different crystal structure. Channels are anisotropically etched through the cap, cladding and active layers and partially th... | 01/21/1992 |
| 5034344 | Method of making a surface emitting semiconductor laser A method of making a vertical-cavity surface emitting laser and method of making in which a III-V heterostructure is epitaxially grown to include a quantum well active region between two interference mirrors separated by an emitting wavelength of the quan... | 07/23/1991 |
| 5034092 | Plasma etching of semiconductor substrates A method for plasma etching semiconductor materials using silicon tetrachloride and boron trichloride is provided. Less etch damage, a greater degree of anisotropy and a more controlled etch is provided by exposing a III-V compound semiconductor to the no... | 07/23/1991 |
| 5032219 | Method for improving the planarity of etched mirror facets A method, and device produced therewith, for improving the planarity of etched mirror facets 18 of integrated optic structures with non-planar stripe waveguides, such as ridge or groove diode lasers or passive devices such as modulators and switches. The ... | 07/16/1991 |
| 5026662 | Method for fabricating a semiconductor stripe laser A method of undercutting mesa structures in which the lateral extent of the undercut is determined by a prior fabrication stage in which channels (5, 6) are etched and then infilled with a different material. The mesa is formed over the channels (5,6) and... | 06/25/1991 |
| 5021361 | Method for making a field effect transistor integrated with an opto-electronic device In a monolithic OEIC in which an FET and a light-emitting device are integrated, the light-emitting device has a first clad layer, an active layer, and a second clad layer stacked on a substrate, the FET has a channel layer and source and drain layers wit... | 06/04/1991 |
| 5013682 | Method for selective epitaxy using a WSI mask Selective growth of GaAs and related semiconductors (34) by use of tungsten silicide and related materials for growth masks (36) plus devices incorporating the selective growth plus use of the growth masks as electrical contacts are disclosed. The deposit... | 05/07/1991 |
| 4966862 | Method of production of light emitting diodes The invention is a method for preparing a plurality of light emitting diodes on a single substrate of a semiconductor material. The method is used for structures where the substrate includes an epitaxial layer of the same semiconductor material that in tu... | 10/30/1990 |
| 4958202 | Semiconductor light-emitting device and method of manufacturing the same An active layer is formed on an n-type InP buffer layer of a substrate. A pair of strip-shaped grooves are formed into the active layer to divide it into a contract portion and side portions. A p-type InP cladding layer is deposited on the entire surface ... | 09/18/1990 |
| 4950622 | Method for manufacturing a surface emitting type AlGaAs/GaAs semiconductor laser diode A method for manufacturing a surface emitting type AlGaAs/GaAs semiconductor LASER diode by a selective epitaxy method which is capable of forming naturally a 45° mirror reflective face during the epitaxy method itself. The method comprises the steps of ... | 08/21/1990 |
