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| Number | Title | Issue Date |
| 5972731 | Surface-emission type light-emitting diode and fabrication process therefor An n-type GaAs layer as a buffer layer, an n-type (Al0.7 Ga0.3)0.5 In0.5 P layer, an active layer, a p-type (Al0.7 Ga0.3)0.5 In0.5 P layer, a thin layer of Alx | 10/26/1999 |
| 5972730 | Nitride based compound semiconductor light emitting device and method for producing the same A wedge-like etching groove is formed so that stresses can be collected along a cleavage surface of a nitride based compound semiconductor, and end portions are separated from a substrate. With these operations, a light-emitting layer can form an excellen... | 10/26/1999 |
| 5963786 | Method of making semiconductor laser with inverted mesa shaped ridge with cervical surface A semiconductor laser has a first conduction type clad layer, an active layer and a second conduction type clad layer formed on a first conduction type semiconductor substrate in this order. An inverted mesa-shaped ridge is formed on a part of the second ... | 10/05/1999 |
| 5950068 | Method of fabricating semiconductor devices having a mesa structure for improved surface voltage breakdown characteristics A semiconductor device comprises a monocrystalline silicon wafer having a major surface lying in the {100} crystal plane. Disposed on the surface is a mesa having a generally square cross-section with generally rounded corners. The mesa has four main side... | 09/07/1999 |
| 5918109 | Method for making optical semiconductor element A method for making an optical semiconductor element including the steps of: forming two growth-blocking mask stripes of silicon dioxide film on a first conductivity type compound semiconductor substrate; selectively forming a double-heterostructure which... | 06/29/1999 |
| 5916822 | Method of etching a substrate by means of chemical beams In order to facilitate resuming molecular beam epitaxy after etching a substrate or an epitaxial layer, the etching method is implemented in an ultra-high vacuum, and it consists in producing at least two simultaneous chemical beams converging towards the... | 06/29/1999 |
| 5918108 | Vertical cavity surface emitting laser with enhanced second harmonic generation and method of making same A vertical cavity surface emitting laser is constructed on a semiconductor substrate, and includes a second mirror stack disposed on the substrate, a gain region with an active material within the second mirror stack capable of emitting electromagnetic ra... | 06/29/1999 |
| 5914499 | High voltage silicon carbide semiconductor device with bended edge The invention relates to a method in which proton or ion implantation is used for restructuring a silicon carbide region from being conductive to being resistive and wherein this implantation method is used for manufacturing a semiconductor device which c... | 06/22/1999 |
| 5895224 | Three-dimensional cavity surface emitting laser structure and fabrication method thereof A three-dimensional cavity surface emitting laser structure and a fabrication method thereof which are capable of effectively controlling the characteristic of the transverse mode by applying independent electrical field to a side wall of an active region... | 04/20/1999 |
| 5888840 | Process of growing multiple quantum well structure for adjusting photoluminescence peak wavelengths to target value While compound semiconductor materials are being selectively grown on an open stripe area of a compound semiconductor substrate for forming a multiple quantum well structure, one of the depositing time and the gas flow rate is gradually decreased from the... | 03/30/1999 |
| 5879961 | Method for increasing laser efficiency in a vertical-cavity surface emitting laser A vertical-cavity surface-emitting laser (VCSEL) has an active region, first and second mirror stacks forming a resonant cavity with a radial variation in index forming a transverse optical mode, and a thin insulating slot within the cavity to constrict t... | 03/09/1999 |
| 5877037 | Process for reducing bond resistance in semiconductor devices and circuits It has been identified that a known loss mechanism in the access path to a mesa type device is more significant than previously believed. The source of the loss is due to the electromagnetic interaction of the wire bond and the device side wall which indu... | 03/02/1999 |
| 5877038 | Method of making a vertical cavity laser A highly controllable, compact method for making a vertical cavity laser. By using selective etching and contact layers within the laser cavity, higher efficiencies and lower power requirements for vertical cavity surface emitting lasers (VCSELs) are achi... | 03/02/1999 |
| 5872022 | Method for etching a semiconductor method for fabricating semiconductor device method for fabricating semiconductor laser and semiconductor laser A method of etching a III-V compound semiconductor uses an etching gas including the group V element of the III-V compound semiconductor substrate layer while keeping the III-V compound semiconductor layer at a temperature higher than the crystal growth t... | 02/16/1999 |
| 5866936 | Mesa-structure avalanche photodiode having a buried epitaxial junction A mesa-structure avalanche photodiode in which a buffer region in the surface of the mesa structure effectively eliminates the sharply-angled, heavily doped part of the cap layer that existed adjacent the lightly-doped n-type multiplication layer and p-ty... | 02/02/1999 |
| 5854088 | Method of manufacturing a surface-emitting laser In a method of fabricating a surface-emitting laser, to assure good electrical confinement and good flatness of the mirrors defining the resonant cavity of the laser an electrical confinement layer is formed by carrying out the following steps: forming an... | 12/29/1998 |
| 5837560 | Method of masking substrates leaving exposed facets A method of masking a substrate to leave an exposed facet for processing during fabrication of a semiconductor devices including providing a substrate formed of a semiconductor material and having a structure projecting therefrom, the structure including ... | 11/17/1998 |
| 5834329 | Laser diode and method for fabricating the same A ridge wavegide laser diode, with an inverse mesa structure, resistant to heat and improved in the adhesion of a contact metal to a contact layer, which can be obtained by forming a polyimide spacer in such a way that polyimide remains only at the lower ... | 11/10/1998 |
| 5789274 | Wavelength-tunable semiconductor laser and fabrication process thereof A wavelength tunable semiconductor laser includes an active region including an active layer generating an optical gain by injection of a current, a phase control region including a tuning layer generating variation of a refraction index by injection of t... | 08/04/1998 |
| 5776792 | Method for forming semiconductor laser device On an n-type semiconductor substrate, a buffer layer and a cladding layer are formed. On the cladding layer, an active layer made of Ga1-X AlX As is formed. On the active layer, an n-type first optical guiding layer made of Ga1-... | 07/07/1998 |
| 5773319 | Method for producing a hydrogenated vertical-cavity surface-emitting laser A method for producing a vertical-cavity surface-emitting laser, includes the steps of: forming a bottom mirror layer, an active layer and a top mirror layer on a semiconductor substrate; forming an antireflection layer on a rear surface of the semiconduc... | 06/30/1998 |
| 5763291 | Method of making semiconductor laser A method of fabricating a semiconductor laser producing visible light includes forming a double heterojunction (DH) structure on a GaAs substrate including an n type GaAs buffer layer, an n type AlGaInP cladding layer, an Alx Ga.sub.(1-x) InP a... | 06/09/1998 |
| 5753524 | Method of forming a plateau and a cover on the plateau in particular on a semiconductor substrate Prior to using etching to form a plateau that is to constitute a laser ridge and that is to be provided with a cover constituting a top electrode, the surface of the cover is initially protected with a dielectric mask and the flanks of the cover are then ... | 05/19/1998 |
| 5726078 | Buried-ridge laser device A buried-ridge structure of the quaternary/tertiary structures of Inx Ga1-x Asy P1-y /InGaP (x and y | 03/10/1998 |
| 5703989 | Single-mode waveguide structure for optoelectronic integrated circuits and method of making same An optical waveguide for use in an optoelectronic integrated circuit and the associated method of manufacturing such a waveguide. The waveguide is formed by the successive layering of varied waveguide materials on a III-V semiconductor substrate, thereby ... | 12/30/1997 |
| 5661076 | Method for fabricating a vertical-cavity surface-emitting laser diode A method for non-active processing of an etched surface in a vertical-cavity surface-emitting laser diode is provided. In order to obtain a stable single fundamental transverse mode, at a low temperature of 100 to 300 degrees, an amorphous GaAs is deposit... | 08/26/1997 |
| 5658824 | Method of fabricating a semiconductor laser device A semiconductor laser device includes: a lower cladding layer; an upper cladding layer having a bottom and a strip-shaped ridge portion projecting from the bottom; a II-VI compound semiconductor active layer interposed between the lower cladding layer and... | 08/19/1997 |
| 5656539 | Method of fabricating a semiconductor laser A method of fabricating a semiconductor laser includes forming a mask having a stripe opening in a direction on a {100} surface of a first conductivity type substrate, and growing a double-heterojunction structure including a first conductivity type... | 08/12/1997 |
| 5654228 | VCSEL having a self-aligned heat sink and method of making A substrate (102) having a surface (103) with a first stack of distributed Bragg reflectors (106), a first cladding region (107), an active region (108), a second cladding region (109), a second stack of distributed Bragg reflectors (110), and a contact r... | 08/05/1997 |
| 5627100 | Method for the making of surface-emitting laser diodes with mechanical mask, the apertures having inclined flanks A method for making a set of surface-emitting laser diodes comprises the making of reflectors by the epitaxial growth of at least one semiconductor material through a mask having apertures with inclined flanks. This method leads to the obtaining of the Br... | 05/06/1997 |
| 5624529 | Dry etching method for compound semiconductors A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or ind... | 04/29/1997 |
| 5612231 | Method of fabricating an electro-optic integrated circuit having light emitting diodes An electro-optic integrated circuit including an addressable array of light emitting devices, a column decoder and a plurality of address lines formed on the substrate. There are n=2{integer[log(m)/log(2)]+1}, where m equals the number of columns, address... | 03/18/1997 |
| 5580818 | Fabrication process for semiconductor optical device A SiO2 mask is formed on an n-type InP substrate. The mask gap width is narrower in a region I (laser region) and wider in a region II (modulator region). With taking the mask as growth blocking masks, an optical guide layer of InGaAsP, an MQW ... | 12/03/1996 |
| 5557626 | Patterned mirror VCSEL with adjustable selective etch region Patterned-mirrors for VCSELs are fabricated by forming a first mirror stack of a plurality of pairs of relatively high and low index of refraction layers, forming an active region of aluminum-free material on the first mirror stack, and forming a second m... | 09/17/1996 |
| 5541139 | Method of manufacturing a radiation-emitting semiconductor diode The invention relates to a method of manufacturing a radiation-emitting semiconductor diode (10) whereby a sacrificial layer (1) comprising a polymer is provided on a first side face (11) of a semiconductor body (20) which contains at least one radiation-... | 07/30/1996 |
| 5538911 | Manufacturing method for a diamond electric device An electric device such as a light emitting device utilizing a diamond film is described. The diamond film is partially doped with an impurity selected from Group IIb or VIb of the periodic table. The doping is performed with a patterned semiconductor fil... | 07/23/1996 |
| 5538919 | Method of fabricating a semiconductor device with high heat conductivity A VCSEL having a first mirror stack positioned on the surface of a substrate, an active region positioned on the first mirror stack and substantially coextensive therewith, and a second mirror stack positioned on the active region, the second mirror stack... | 07/23/1996 |
| 5504768 | Semiconductor laser device and method for manufacturing the same A method for manufacturing the semiconductor laser device comprising the steps of sequentially forming an active layer, a photo-waveguide layer, a cladding layer, and an ohmic contact layer on an upper surface of an InP substrate; forming a first patterne... | 04/02/1996 |
| 5482891 | VCSEL with an intergrated heat sink and method of making A substrate (102) having a surface (103) with a first stack of distributed Bragg reflectors (106), a first cladding region (107), an active region (108), a second cladding region (109), a second stack of distributed Bragg reflectors (110), and a contact r... | 01/09/1996 |
| 5478774 | Method of fabricating patterned-mirror VCSELs using selective growth A method of fabricating VCSELs including the steps of epitaxially growing a first mirror stack of a first conductivity type, an active region on the first mirror stack, and a first portion of a second mirror stack of a second conductivity type on the acti... | 12/26/1995 |
