Bizarre Patents
Wearable Device For Feeding and Observing Birds and Other Flying Animals
A device for feeding and observing flying animals comprising a hat, a support mounted on the hat and extending outward from the hat, and a feeder mounted on the support.
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| Number | Title | Issue Date |
| 6495380 | Epitaxially grown avalanche photodiode A photodiode, and method of manufacturing thereof, is provided which combines advantages of planar structure photodiodes and mesa structure photodiodes. Semiconductor layers are epitaxially grown as is done for traditional planar structures. However the u... | 12/17/2002 |
| 6482666 | Semiconductor device, its manufacturing method and substrate for manufacturing a semiconductor device It is intended to provide a semiconductor device, its manufacturing method and substrate for manufacturing the semiconductor device which ensures that good cleavable surfaces be made stably in a semiconductor layer under precise control upon making edges ... | 11/19/2002 |
| 6455340 | Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoff A method is provided for fabricating a nitride based resonant cavity semiconductor structure with a first distributed Bragg reflector on a sapphire substrate, a second substrate bonded to the first distributed Bragg reflector, the sapphire substrate remov... | 09/24/2002 |
| 6414975 | Semiconductor light emitting device with II-VI group semiconductor contact layer containing alkali metal impurity, method of producing same, and optical device including same The invention provides a semiconductor light emitting device whose operating voltage can be easily reduced, a method of producing the same, and an optical device. An n-type clad layer, a first guide layer, an active layer, a second guide layer, a p-type c... | 07/02/2002 |
| 6407407 | Ridge laser with oxidized strain-compensated superlattice of group III-V semiconductor A ridge laser that includes a Group III-V semiconductor material substrate; a first selectively oxidized at least one strain-compensated superlattice of Group III-V semiconductor material; a multiple quantum well active region; a second selectively oxidiz... | 06/18/2002 |
| 6399404 | Fabricating method of optical semiconductor device In an optical semiconductor device fabrication method for simultaneously forming elements having different operation wavelengths on a circular semiconductor substrate, the number of elements for each operation wavelength is made constant efficiently and t... | 06/04/2002 |
| 6391671 | Method of producing an optical semiconductor device having a waveguide layer buried in an InP current blocking layer An integrated semiconductor laser produced by forming waveguide layers each having a particular band gap and a particular layer thickness collectively and then forming an InP current blocking layer. After an InGaAsP layer has been formed on an InP substra... | 05/21/2002 |
| 6384955 | Light modulator A light modulator includes a semiconductor substrate having a main surface, a rear surface, and a grounding conductor on the rear surface. A wave guide section having a width is located on the semiconductor substrate. A bonding pad section on the semicond... | 05/07/2002 |
| 6363092 | Narrow spectral width high power distributed feedback semiconductor lasers High power edge emitting semiconductor lasers are formed to emit with very narrow spectral width at precisely selected wavelengths. An epitaxial structure is grown on a semiconductor substrate, e.g., GaAs, and includes an active region at which light emis... | 03/26/2002 |
| 6358316 | Method for producing semiconductor device, method for producing semiconductor laser device, and method for producing quantum wire structure In a method for producing a semiconductor device, a compound semiconductor cap layer including no aluminum is grown on a compound semiconductor layer including aluminum, a mask pattern insulating film is formed on a part of the compound semiconductor cap ... | 03/19/2002 |
| 6355497 | Removable large area, low defect density films for led and laser diode growth A technique based on etching a release layer, for separating the nearly lattice matched substrate from a base substrate is disclosed. A nearly lattice matched substrate for the epitaxial growth of Group-III nitride semiconductor devices and method of fabr... | 03/12/2002 |
| 6316280 | Method of manufacturing semiconductor devices separated from a wafer A semiconductor device with an improved speed response has a linear ridge pattern including an active layer, a cladding layer, a current blocking layer, and a contact layer on a semiconductor substrate. The insulating layer may be formed in a pattern havi... | 11/13/2001 |
| 6287884 | Buried hetero-structure InP-based opto-electronic device with native oxidized current blocking layer A buried hetero-structure with native oxidized current blocking layer for InP-based opto-electronic devices comprises a InP semiconductor substrate, a buffer layer, a ridge mesa containing lower confinement layer, active layer and upper grating confinemen... | 09/11/2001 |
| 6284559 | Gallium nitride group compound semiconductor light-emitting device and method for fabricating the same A gallium nitride group compound semiconductor light-emitting device comprises a substrate and a layered structure provided on the substrate. The layered structure includes: an active layer; an upper cladding layer and a lower cladding layer which is loca... | 09/04/2001 |
| 6282009 | Light modulator and method of manufacturing the light modulator A light modulator having a reduced parasitic static capacitance includes a semiconductor substrate having a mesa section and a bonding pad section. A primary insulating film on the substrate continuously covers the mesa section and the bonding pad section... | 08/28/2001 |
| 6277663 | Method of producing semiconductor laser diode A semiconductor laser diode includes a mesa having a width on a semiconductor substrate and aligned with a direction of resonance, a current blocking layer formed by selective growth on both sides of the mesa and having a first embedded layer and a second... | 08/21/2001 |
| 6261859 | Method for fabricating surface-emitting semiconductor device, surface-emitting semiconductor device fabricated by the method, and display device using the device A surface-emitting semiconductor device is fabricated by a method comprising the steps of epitaxially growing, on a first substrate comprising a semiconductor, semiconductor layers having a semiconductor active layer capable of emitting light upon feed of... | 07/17/2001 |
| 6183264 | Safety receptacle for electrical outlets A safety outlet receptacle with a corresponding plug that renders the outlet receptacle inactive and unable to transmit an electrical current unless activated using the corresponding plug. The invention uses a very simple magnetic switch that is biased wi... | 02/06/2001 |
| 6180429 | Process for selective area growth of III-V semiconductors The specification describes a lift-off technique useful in the manufacture of III-V semiconductor devices such as MQW lasers. The lift-off step is improved by a spacer layer of III-V semiconductor that can be non-selectively etched to form a mesa stripe, ... | 01/30/2001 |
| 6174747 | Method of fabricating ridge waveguide semiconductor light-emitting device A method of fabricating a ridge waveguide semiconductor light-emitting device is provided in which an oxide semiconductor having a heavy carrier concentration serves as the interface of the metal layer and the epitaxial layer to make the current flow thro... | 01/16/2001 |
| 6168962 | Method of manufacturing a semiconductor light emitting device Disclosed is a method of manufacturing a semiconductor light emitting device. Semiconductor overlying layers are formed on a substrate in a state of a wafer so that a light emitting area is provided therein. The semiconductor overlying layers includes fir... | 01/02/2001 |
| 6159760 | Method of fabricating oxide-aperture vertical cavity surface emitting lasers A method of fabricating oxide-apertured vertical cavity surface emitting lasers involving the steps of: i) defining, during the fabrication of one or more VCSELs on an electronic chip, a number of mesa structures of different sizes; ii) selectively oxidiz... | 12/12/2000 |
| 6156582 | Method of fabricating top emitting ridge VCSEL with self-aligned contact and sidewall reflector A method of fabricating a ridge VCSEL having a first stack of mirrors, a second stack of mirrors and an active area sandwiched therebetween, including the steps of depositing a metal layer, an etchable layer and a masking layer on the second stack, removi... | 12/05/2000 |
| 6143583 | Dissolved wafer fabrication process and associated microelectromechanical device having a support substrate with spacing mesas The method of the present invention provides a process for manufacturing MEMS devices having more precisely defined mechanical and/or electromechanical members. The method of the present invention begins by providing a partially sacrificial substrate and ... | 11/07/2000 |
| 6140142 | Semiconductor laser and a method for producing the same A semiconductor laser device according to the present invention includes: a semiconductor substrate having a first conductivity type; and a semiconductor multilayer structure provided on the semiconductor substrate, the semiconductor multilayer structure ... | 10/31/2000 |
| 6127246 | Method of making an electronic device and the same Laminated layers including semiconductor or metal thin layers and insulative thin layers are formed on a substrate and after the laminated layers are patterned, and the laminated layers are oxidized from their side to form an oxidized area. This way, a 0-... | 10/03/2000 |
| 6124146 | Resistless device fabrication method A method of depositing a material to a semiconductor device having a first mesa structure, a second mesa structure and a valley. Material is deposited from a first angular direction sufficient to substantially mask the valley with a first of the mesa stru... | 09/26/2000 |
| 6121068 | Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication A longwavelength vertical cavity surface emitting laser (VCSEL) for use in optical telecommunications and method of fabrication that includes the fabrication of an active VCSEL structure on a supporting substrate and the fabrication of a highly reflective... | 09/19/2000 |
| 6108481 | Optical semiconductor device and its manufacturing method In order to realize an optical semiconductor device having a window structure promising high-speed operation and highly efficient coupling with optical fibers and to realize its manufacturing method, the device has a window structure in which an optical g... | 08/22/2000 |
| 6093882 | Method of producing a solar cell; a solar cell and a method of producing a semiconductor device A solar cell and a method of producing the same which realizes electrical separation of the p n junction in a simple manner, and a method of producing a semiconductor device a method of producing a semiconductor device in which an electrode is formed by u... | 07/25/2000 |
| 6091084 | Semiconductor light emitting device A semiconductor light emitting device has a light emitting chip and a conductive member. A light emitting chip is formed by an insulating substrate. A semiconductor layered portion has semiconductor layers forming a light emitting layer grown on the insul... | 07/18/2000 |
| 6074888 | Method for fabricating semiconductor micro epi-optical components A method for fabricating a monolithic micro-optical component. The construction of the micro-optical components is accomplished by using standard semiconductor fabrication techniques. The method comprises the steps of depositing an etch stop layer (44) on... | 06/13/2000 |
| 6063643 | Surface-emission type light-emitting diode and fabrication process thereof An n-type GaAs layer as a buffer layer, an n-type (Al0.7 Ga0.3)0.5 In0.5 P layer, an active layer, a p-type (Al0.7 Ga0.3)0.5 In0.5 P layer, a thin layer of Alx | 05/16/2000 |
| 6048748 | Advanced semiconductor devices fabricated with passivated high aluminum content III-V materials For AlGaAs LEDs the confining layers adjoining the active layer possess the highest Al composition. From failure analysis of non-passivated, WHTOL-aged, AlGaAs LEDs, it was discovered that corrosion occurs the fastest at the exposed surfaces of the high A... | 04/11/2000 |
| 6046064 | Method for fabricating chemical semiconductor device Method for fabricating a compound semiconductor device including the steps of forming an active layer on a substrate, forming a plurality of ohmic electrodes on predetermined regions of the active layer, forming a mask material layer on the entire surface... | 04/04/2000 |
| 6037189 | Integrated waveguide device and method of fabricating the integrated waveguide device A method of fabricating an integrated waveguide device includes forming a ridge having a width that varies in a tapered shape along the [011] direction on a semiconductor substrate and growing a laminated layer structure including a light waveguide layer ... | 03/14/2000 |
| 6025207 | Method for manufacture of a buried structure laser device for integrated photonic circuit A method for the manufacture of a buried structure laser device for integration with an optical guide in a photonic circuit. This method brings about the successive growth, on a buffer layer doped with carriers of a first type and covering the entire surf... | 02/15/2000 |
| 5985686 | Process for manufacturing vertical cavity surface emitting lasers using patterned wafer fusion and the device manufactured by the process In the fabrication of vertical cavity surface emitting lasers, patterned wafer fusion promotes low-loss refractive index guiding combined with a mechanically robust and reproducibly fabricatable structure. A fabricated laterally refractive index guided VC... | 11/16/1999 |
| 5985685 | Method for making optical device with composite passive and tapered active waveguide regions A semiconductor optical device, for example a laser, has a composite optical waveguide including a tapered, MQW active waveguide in optical contact with a substantially planar, passive waveguide. The fundamental optical mode supported by the composite wav... | 11/16/1999 |
| 5981307 | Fabrication process of optical semiconductor device having a diffraction grating A method of fabricating an optical semiconductor device includes the steps of irradiating a substrate by a first optical beam and a second optical beam such that the first and second optical beams form interference fringes on the substrate, exposing a res... | 11/09/1999 |
