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| Number | Title | Issue Date |
| 6846689 | Semiconductor laser with a lattice structure A semiconductor laser (22) with a semiconductor substrate (11), a laser layer (13) arranged on the semiconductor substrate, a waveguide ridge (15) arranged at a distance from the laser layer, and a strip-shaped lattice structure (23 | 01/25/2005 |
| 6846685 | Vertical-cavity surface-emitting semiconductor laser A vertical-cavity surface-emitting semiconductor laser has a substrate, a lower DBR structure portion having a plurality of layers provided on the substrate, a semiconductor buried structure portion provided over the lower DBR structure portion having at least one l... | 01/25/2005 |
| 6828168 | Method of fabrication of a micro-electromechanically tunable vertical cavity photonic device A tunable Fabry-Perot vertical cavity photonic device and a method of its fabrication are presented. The device comprises top and bottom semiconductor DBR stacks and a tunable air-gap cavity therebetween. The air-gap cavity is formed within a recess in a spacer abov... | 12/07/2004 |
| 6806112 | High brightness light emitting diode The present invention discloses a high brightness light emitting diode and a method for producing the same. The light emitting diode includes a gallium phosphide window and a reflective mirror so as to promote brightness thereof. To produce the light emitting diode,... | 10/19/2004 |
| 6787383 | Light-emitting device and method for manufacturing the same The light-emitting device 100 has an ITO electrode layer 8 for applying drive voltage for light emission to a light emitting layer section 24, where the light from the light emitting layer section 24 is extracted as being passed through t... | 09/07/2004 |
| 6787381 | Semiconductor laser and method of production of the same A semiconductor laser capable of emitting a plurality of laser light having different oscillation wavelengths which is formed with dielectric films having little fluctuation in reflectance at ends of a plurality of active layers and a method of production of the sam... | 09/07/2004 |
| 6784009 | Electrode patterning in OLED devices An OLED device having pillars with cross section that is wider on the top. The pillars structure a conductive layer during deposition into distinct portions located between the pillars and on the top of the pillars. In one embodiment, the grooves between the pillars... | 08/31/2004 |
| 6784010 | Nitride-based semiconductor laser device and method for the production thereof The nitride-based semiconductor laser device 10 has a stacked structure comprising a first contacting layer 14, a first cladding layer 16, an active layer 20, a second cladding layer 24, a second contacting layer 26 and a se... | 08/31/2004 |
| 6775310 | Semiconductor light emitting device and manufacturing method thereof On a semiconductor substrate (1), a double hetero structure portion (6) in which an active layer (4) having smaller band gap is sandwiched between semiconductor layers (3, 5) having larger band gap than that of the active layer (4)... | 08/10/2004 |
| 6773947 | Method of manufacturing semiconductor device including an opening formed by a laser According to the present invention, of the resist film applied to the entire surface of the silicon substrate, the part on the electrode pattern is removed and an opening shaped like a dish in which the diameter of the upper part is larger than that of the lower par... | 08/10/2004 |
| 6774025 | Method for producing group III nitride compound semiconductor light-emitting element After a p seat electrode is laminated on a light-transmissive electrode, the two electrodes are heated at a relatively low temperature to thereby remove gas (degassing) from between the two electrodes. Then, the two electrodes are alloyed with each other at a high t... | 08/10/2004 |
| 6773945 | Method of manufacturing a waveguide optical semiconductor device A method of manufacturing a waveguide optical semiconductor device provides a semiconductor substrate including a lower clad layer, a core layer, an upper clad layer and a contact layer formed on the substrate in order. The contact layer and a part of the upper clad... | 08/10/2004 |
| 6756246 | Method for fabricating III-V group compound semiconductor A method for fabricating a GaN-based III-V Group compound semiconductor is provided that utilizes a regrowth method based on the HVPE method to form a second III-V Group compound semiconductor layer having a flat surface on a first III-V Group compound semiconductor... | 06/29/2004 |
| 6750478 | Semiconductor laser device and method for suppressing fabry perot oscillations A semiconductor laser device includes an active layer configured to radiate light, a light reflecting facet positioned on a first side of the active layer, and a light emitting facet positioned on a second side of the active layer thereby forming a resonator between... | 06/15/2004 |
| 6737290 | Surface-emitting semiconductor laser device and method for fabricating the same, and surface-emitting semiconductor laser array employing the laser device A surface-emitting semiconductor laser device having reduced device resistance, a method for fabricating the device and a surface-emitting semiconductor laser array employing the device are provided. The laser device comprises a lower reflector layer structure and a... | 05/18/2004 |
| 6734111 | Method to GaAs based lasers and a GaAs based laser The invention relates to a method using dry etching to obtain contamination free surfaces on of a material chosen from the group comprising GaAs, GaAlAs, InGaAsP, and InGaAs to obtain nitride layers on arbitrary structures on GaAs based lasers, and a GaAs based lase... | 05/11/2004 |
| 6727112 | Buried hetero-structure opto-electronic device A method of manufacturing a semiconductor optical device comprising the steps of: providing a substrate having an active layer thereon; providing an aluminium-bearing layer, the aluminium bearing layer being adjacent the active layer; and oxidising the aluminium-bea... | 04/27/2004 |
| 6709881 | Method for manufacturing semiconductor and method for manufacturing semiconductor device A method for manufacturing a semiconductor includes: a first step of forming an etching stop layer on a first semiconductor layer; and a second step of forming a second semiconductor layer made of a group III-V compound semiconductor on the etching stop layer. An et... | 03/23/2004 |
| 6709884 | Light emitting device, semiconductor device, and method of manufacturing the devices The invention provides a light emitting device and a semiconductor device each having improved characteristics by preventing occurrence of a damage caused by contact of a tool. On a substrate, an n-type semiconductor layer, an active layer, and a p-type semiconducto... | 03/23/2004 |
| 6707835 | Process for producing semiconductor laser element including S-ARROW structure formed by etching through mask having pair of parallel openings In a process for producing a semiconductor laser element, a mask having a pair of openings is formed on a current stopping layer formed above a first cladding layer; a pair of first grooves are formed in the current stopping layer by etching using the mask; portions... | 03/16/2004 |
| 6699728 | Patterning of electrodes in oled devices An OLED device using improved pillars to facilitate patterning of a conductive layer is described. Conventional use of pillars to pattern electrodes encounters shorting problems due to piling of polymer material at the base of the pillars. This piling det... | 03/02/2004 |
| 6696312 | Robust electrode patterning in OLED devices A method of fabricating OLED devices is disclosed. A conductive layer is patterned by pillars to form electrodes in the device, wherein portions of the pillars have at least 2 sub-rows to prevent shorting of adjacent electrodes. In one embodiment, the end... | 02/24/2004 |
| 6686217 | Compound semiconductor device manufacturing method A method of forming a compound semiconductor device. The method includes the steps of depositing a film that contains zinc oxide and silicon oxide to contain the zinc oxide by 70 wt % or more on compound semiconductor layer as a diffusion source, and diff... | 02/03/2004 |
| 6677174 | Method for patterning devices The present invention relates to patterning methods for organic devices, and more particularly to patterning methods using a die. A first layer of organic materials is deposited over a substrate, followed by a first electrode layer. A first patterned die ... | 01/13/2004 |
| 6677175 | Optical waveguides and methods for making the same The invention provides a method for producing an optical waveguide that includes the steps of: (a) forming a core structure, the core structure including an at least partially cured core composition, on a master defining a waveguide pattern; (b) applying ... | 01/13/2004 |
| 6660551 | Semiconductor process A process by which photonic band gap structures are created by etching trenches in indium gallium arsenide, preferentially infilling the trenches with indium phosphide and forming multiple layers of interleaved regions of indium gallium arsenide and indiu... | 12/09/2003 |
| 6656759 | Method of producing semiconductor element, semiconductor element, and gyroscope A method of producing a semiconductor element is disclosed which comprises a step of preparing a semiconductor element member comprising a projection region on a substrate, a step of embedding an upper surface of the substrate, and upper and side surfaces... | 12/02/2003 |
| 6653161 | Method and apparatus for forming a capacitive structure including single crystal silicon A capacitive structure including single crystal silicon and an insulating layer in a semiconductor substrate. One embodiment of the present invention includes an optical switching device having one or more capacitive structures including single crystal si... | 11/25/2003 |
| 6645784 | Microelectromechanically tunable, confocal, vertical cavity surface emitting laser and fabry-perot filter A method is provided for fabricating microelectromechanically tunable vertical-cavity surface-emitting lasers and microelectromechanically tunable Fabry-Perot filters with precise lateral and vertical dimensional control. Strained reflective dielectric fi... | 11/11/2003 |
| 6630690 | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure An optoelectronic device with a Group III Nitride active layer is disclosed that comprises a silicon carbide substrate; an optoelectronic diode with a Group III nitride active layer; a buffer structure selected from the group consisting of gallium nitride... | 10/07/2003 |
| 6625357 | Method for fabricating fiducials for passive alignment of opto-electronic devices The present invention relates to a technique for fabricating a mechanical or visual alignment fiducial on a laser die particularly adapted for application with a laser die that is a buried structure edge emitting laser. In fabricating the device, the fidu... | 09/23/2003 |
| 6610589 | Semiconductor light emitting device and method of manufacturing the same A semiconductor lamination including an n-type layer and a p-type layer composed of a gallium nitride based compound semiconductor and forming a light emitting region is formed on the surface of a substrate. A p-side electrode is formed through a diffusio... | 08/26/2003 |
| 6589806 | Method of fabricating semiconductor laser for preventing turn-on of pnpn thyrister There is provided a semiconductor laser including (a) an n-type semiconductor substrate, (b) an active layer formed on the n-type semiconductor substrate, (c) a first p-type semiconductor layer formed adjacent to the active layer, (d) an n-type semiconduc... | 07/08/2003 |
| 6573116 | Ridge type semiconductor laser of laterally-coupled distributed feedback and method of manufacturing the same There is provided a method of manufacturing a ridge type LC-DFB semiconductor laser in which a laser substrate having a cladding layer made of a material for a ridge stripe formed on an active layer made of semiconductor. A stripe mask is formed on the cl... | 06/03/2003 |
| 6548317 | Photoelectric conversion element and method for manufacturing the same The purpose of the invention is to provide a photoelectric conversion element enable to ensure the connection of the contact electrode easily and accurately. The plurality of the laser oscillator in which a semiconductor layer and the p-side electrode are... | 04/15/2003 |
| 6537841 | Ridge-structure DFB semiconductor laser and method of manufacturing the same A description is provided of a ridge-structure DFB semiconductor laser and a method of manufacturing the laser wherein an optical absorption loss by a metal electrode formed on a grating can be avoided. The DFB semiconductor laser includes: a ridge protru... | 03/25/2003 |
| 6521476 | Method for manufacturing a semiconductor optical functional device A method for manufacturing a semiconductor optical functional device, comprising: forming a laminated semiconductor layer over a substrate; forming an island-form preliminary pattern whose side wall surface is substantially perpendicular to the upper surf... | 02/18/2003 |
| 6503774 | Embedding parasitic model for pi-fet layouts A model for a semiconductor device and more particularly to a Pi-FET with multiple gate fingers. The model takes into account various parasitics and the inter-relationship therebetween. In particular, multi-finger Pi-FETs are modeled as multiple single fi... | 01/07/2003 |
| 6500687 | Distributed feedback semiconductor laser element and method for making the same A method for producing a distributed feedback semiconductor laser element includes the steps of forming a laser substrate, forming a ridge by etching the laser substrate, and forming a flattening layer on the ridge. A grating is then formed on the flatten... | 12/31/2002 |
| 6500688 | Interband cascade light emitting device and method of making same An interband cascade (IC) light emitting device having narrow ridges, and a method of growing and fabricating the IC light emitting device is disclosed. The IC light emitting device produced by the method of the present invention has 18 active regions sep... | 12/31/2002 |
