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| Number | Title | Issue Date |
| 7037742 | Methods of fabricating light emitting devices using mesa regions and passivation layers Light emitting diodes include a substrate, an epitaxial region on the substrate that includes therein a diode region and a multilayer conductive stack on the epitaxial region opposite the substrate. A passivation layer extends at least partially on the multilayer co... | 05/02/2006 |
| 7038288 | Front side illuminated photodiode with backside bump This invention relates to a novel optoelectronic chip with one or more optoelectronic devices, such as photodiodes, fabricated on a front side of a semiconductor wafer and contacts on a backside of the semiconductor wafer. The backside contacts can be contact bumps,... | 05/02/2006 |
| 7033853 | Method for producing a vertically emitting laser The invention is directed to a vertically emitting laser and a method of manufacturing such a laser having a current aperture and a semiconductor relief. The semiconductor relief and the current aperture are defined in the same processing operation, thereby causing ... | 04/25/2006 |
| 7016128 | Method of making a high reflectivity micro mirror and a micro mirror A method of making a high reflectivity micro mirror. A first step involves providing a monolithic bulk crystal silicon having an anisotropic body with a crystalline plane. A second step involves applying chemical agents to selectively remove a portion of the body ov... | 03/21/2006 |
| 7008810 | Method for fabricating at least one mesa or ridge structure or at least one electrically pumped region in a layer or layer sequence A method for fabricating at least one mesa or ridge structure in a layer or layer sequence, in which a sacrificial layer (4) is applied and patterned above the layer or layer sequence. A mask layer is applied and patterned above the sacrificial layer for defi... | 03/07/2006 |
| 7009199 | Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current A light engine comprises a pair of LED active elements mounted on a common header having first and second terminals. The first terminal is connected to the cathode of the first LED active element and the anode of the second LED active element, while the second termi... | 03/07/2006 |
| 6995032 | Trench cut light emitting diodes and methods of fabricating same A method is provided for forming semiconductor devices using a semiconductor substrate having first and second opposed sides, and at least one device layer on the second side of the substrate, the at least one device layer including first and second device portions.... | 02/07/2006 |
| 6995030 | Semiconductor chip for optoelectronics An optoelectronic semiconductor chip has an active layer containing a photon-emitting zone. The active layer is attached to a carrier member at a bonding side of the active layer. The active layer has at least one recess therein with a cross-sectional area that decr... | 02/07/2006 |
| 6991950 | Method for fabricating semiconductor laser element and the same laser element There is provided a semiconductor laser element which can change band gap wavelengths without change of composition of a multiple quantum well active layer and a method for fabricating a semiconductor laser module. In the method for fabricating a semiconductor laser... | 01/31/2006 |
| 6989299 | Method of fabricating on-chip spacers for a TFT panel A method for fabricating on-chip spacers for a TFT panel exposes a photoresist layer on top of the TFT panel using two exposure processes, one through the bottom of the TFT and the other through a mask over the TFT panel. The exposure process through the bottom expo... | 01/24/2006 |
| 6989312 | Method for fabricating semiconductor optical device Provided is a method for fabricating a semiconductor optical device that can be used as a reflecting semiconductor mirror or an optical filter, in which two or more types of semiconductor layers having different etch rates are alternately stacked, at least one type ... | 01/24/2006 |
| 6974712 | Method of fabricating a surface-type optical apparatus A surface optical apparatus that includes a surface optical device with p-side and n-side electrodes, such as a surface emitting laser, a first substrate for supporting the surface optical device directly or through an elastic supporter formed of one or plural layer... | 12/13/2005 |
| 6969627 | Light-emitting diode and the manufacturing method of the same The specification discloses a light-emitting diode and the corresponding manufacturing method. A GaN thick film with a slant surface is formed on the surface of a substrate. An epitaxial slant surface is naturally formed using the properties of the GaN epitaxy. An L... | 11/29/2005 |
| 6970612 | Surface optical device apparatus, method of fabricating the same, and apparatus using the same A surface optical device apparatus includes a surface optical device and a second substrate. The surface optical device includes a functional layer grown on a first substrate, which acts as a supporting substrate for fabricating the functional layer thereon. The fir... | 11/29/2005 |
| 6967122 | Group III nitride compound semiconductor and method for manufacturing the same A sapphire substrate 1 is etched so that each trench has a width of 10 μm and a depth of 10 μm were formed at 10 μm of intervals in a stripe pattern. Next, an AlN buffer layer 2 having a thickness of approximately 40 nm is formed mainly on the upper... | 11/22/2005 |
| 6956250 | Gallium nitride materials including thermally conductive regions The invention includes providing gallium nitride materials including thermally conductive regions and methods to form such materials. The gallium nitride materials may be used to form semiconductor devices. The thermally conductive regions may include heat spreading... | 10/18/2005 |
| 6948821 | Mirror for reflecting electromagnetic radiation as well as illumination and imaging method employing the same A mirror arrangement for reflecting electromagnetic radiation has a mirror body with a mirror side disposed towards the radiation to be reflected and at least one extension sensor located at the mirror body for detecting a deformation state of the mirror body. The m... | 09/27/2005 |
| 6946313 | Method of making an aligned electrode on a semiconductor structure A method of making an electrode on a semiconductor device including depositing metal on a top surface of a semiconductor structure, and defining a first region of the semiconductor structure for a first electrode by forming a mask over the metal. The mask has an ope... | 09/20/2005 |
| 6944373 | High index-step grating fabrication using a regrowth-over-dielectric process An optical device (10) including a first semiconductor layer (12) on which is deposited a dielectric layer that is patterned and etched to form dielectric strips (14) as part of a diffraction grating layer. Another semiconductor layer (16... | 09/13/2005 |
| 6943050 | Method for making semiconductor device, semiconductor element composite, electro-optical apparatus, and electronic system The invention provides a method of fabricating a semiconductor device in which a more satisfactory selective etching ratio is ensured when AlGaAs is used for a layer provided with a semiconductor element, and provides a semiconductor element composite, an electro-op... | 09/13/2005 |
| 6936486 | Low voltage multi-junction vertical cavity surface emitting laser An optical device with a wavelength of operation, the device comprising a light emitting region which emits light at the wavelength of operation, the light emitting region including an active region and a contact region of a first conductivity type and a second cond... | 08/30/2005 |
| 6933220 | Thyristor switch for microwave signals A thyristor for switching microwave signals includes semiconductor layers disposed on a substrate. A first surface of the thyristor defines an anode, and a second surface of the thyristor defines a cathode. The semiconductor layers include at least one semi-insulati... | 08/23/2005 |
| 6933536 | Method for fabricating fiducials for passive alignment of opto-electronic devices The present invention relates to a technique for fabricating a mechanical or visual alignment fiducial on a laser die particularly adapted for application with a laser die that is a buried structure edge emitting laser. In fabricating the device, the fiducial and th... | 08/23/2005 |
| 6930319 | Method for dense pixel fabrication and product thereof A method of fabricating a dense pixel array comprising the steps of: (a) printing a photoresist mask and applying said mask to a semiconductor material substrate to form a masked area and an unmasked area on said substrate; (b) applying a photoresist material layer ... | 08/16/2005 |
| 6930321 | Robust electrode patterning in OLED devices An OLED device having a conductive layer patterned by pillars to form electrodes in the device is disclosed, wherein portions of the pillars have at least 2 sub-rows to prevent shorting of adjacent electrodes. In one embodiment, the ends of the pillars are split int... | 08/16/2005 |
| 6930059 | Method for depositing a nanolaminate film by atomic layer deposition An atomic layer deposition method to deposit an oxide nanolaminate thin film is provided. The method employs a nitrate ligand in a first precursor as an oxidizer for a second precursor to form the oxide nanolaminates. Using a hafnium nitrate precursor and an aluminu... | 08/16/2005 |
| 6927861 | Simple deterministic method for array based optical component packaging A method involves aligning each of two optical components to be joined relative to a common standard, removing the common standard, and joining each of two optical components to each other in alignment. ... | 08/09/2005 |
| 6924161 | Protective side wall passivation for VCSEL chips Methods for sealing or passivating the edges of chips such as vertical cavity surface emitting lasers (VCSEL) is disclosed. One method includes oxidizing the edges of die at the wafer level prior to cutting the wafer into a plurality of die. This may be accomplished... | 08/02/2005 |
| 6924511 | Vertical cavity surface emitting semiconductor laser with triangle prism optical cavity resonator The invention provides a method and device for light generation wherein an embodiment of the device comprises a lower electrode, a conducting substrate formed on the lower electrode, and a triangle mesa structure having an optical cavity formed on the substrate. The... | 08/02/2005 |
| 6924502 | Semiconductor light emitting device for stably obtaining peak wave length of emission spectrum A semiconductor light emitting device has in sequence on a semiconductor substrate, a multilayer reflection film, a semiconductor layer, and a quantum well active layer. A distance between an upper surface of the multilayer reflection film and a lower surface of the... | 08/02/2005 |
| 6921925 | Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs) In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality ... | 07/26/2005 |
| 6919217 | Semiconductor laser device fabricating method An AlGaAs-based semiconductor laser 29 is formed on an n-type GaAs substrate 21, and thereafter, a non-doped GaAs protective layer 30 is formed. When the n-type substrate 21 is exposed by removing by etching a partial region of the AlGaAs... | 07/19/2005 |
| 6916672 | Method of self-aligning an oxide aperture with an annular intra-cavity contact in a long wavelength VCSEL A method of forming a vertical cavity surface emitting laser (100, 600, 900) includes process steps for self-aligning the p-type ohmic contact (118, 518, 932), an oxide current aperture (122, 926a), and a central puck of re-phase material... | 07/12/2005 |
| 6911621 | Biosensor A method of forming a biosensor is provided. The method includes providing a substrate and a cover including first and second surfaces, positioning a reagent on the substrate, carving a channel by laser ablation in the first surface, and coupling the first surface o... | 06/28/2005 |
| 6906353 | High speed implanted VCSEL A vertical cavity surface emitting laser includes a first mirror region forming a first distributed Bragg reflector, a first cladding region, an active region, a second cladding region including a high electrical resistance implanted region positioned to define a cu... | 06/14/2005 |
| 6900069 | Method of fabricating surface-emission type light-emitting device, surface-emitting semiconductor laser, method of fabricating the same, optical module and optical transmission device A method of fabricating a surface-emission type light-emitting device which emits light in a direction perpendicular to a semiconductor substrate, includes the following steps (a) to (e). (a) A step of forming a column-shaped section by etching at least a part of a ... | 05/31/2005 |
| 6900068 | Light emitting diode and method of making the same A high reflective and conductive metal substrate instead of a GaAs substrate which is a light absorption substrate is utilized for the light emitting diode. The processes include forming a mirror protection film on the light emitting epi-layers. The mounting between... | 05/31/2005 |
| 6890778 | Vertical cavity surface emitting laser and a method of fabrication thereof An electrically pumped VCSEL and a method of its fabrication are presented. The VCSEL comprises an active cavity material sandwiched between top and bottom DBR stacks, the top DBR having at least one n-semiconductor layer. The device defines an aperture region betwe... | 05/10/2005 |
| 6884648 | Method for fabricating semiconductor light emitting device A method for fabricating a semiconductor light emitting device, the method comprising the steps of: repeatedly forming, on a first nitride based Group III-V compound semiconductor layer, stripe-shaped masking films in a predetermined cycle in a width-wise direction ... | 04/26/2005 |
| 6852558 | Methods for forming index guided vertical cavity surface emitting lasers Planar index guided vertical cavity surface emitting laser (PIG VCSEL) utilizes index guiding to provide improved optical confinement and proton implantation to improve current confinement. Index guiding is achieved by etching index guide openings (holes or partial ... | 02/08/2005 |
