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| Number | Title | Issue Date |
| 7141445 | Semiconductor light emitting device and method for manufacturing same There are provided a semiconductor light emitting device wherein the variation in tone in each device is small and the variation in tone due to deterioration with age is also small, and a method for manufacturing the same. The semiconductor light emitting device inc... | 11/28/2006 |
| 7141828 | Flip-chip light emitting diode with a thermally stable multiple layer reflective p-type contact A p-type contact (30) is disclosed for flip chip bonding and electrically contacting a p-type group III-nitride layer (28) of a group III-nitride flip chip light emitting diode die (10) with a bonding pad (60). A first palladium layer ( | 11/28/2006 |
| 7138665 | Light emitting element, method of manufacturing the same, and semiconductor device having light emitting element An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with ... | 11/21/2006 |
| 7138664 | Semiconductor device having a light emitting element An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with ... | 11/21/2006 |
| 7135714 | Light emitting element, method of manufacturing the same, and semiconductor device having light emitting element An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with ... | 11/14/2006 |
| 7135411 | Method for etching mesa isolation in antimony-based compound semiconductor structures Antimony-based semiconductor devices are formed over a substrate structure (10) that includes an antimony-based buffer layer (24) and an antimony-based buffer cap (26). Multiple epitaxial layers (30–42) formed over the substrate structu... | 11/14/2006 |
| 7129104 | Wavelength-insensitive radiation coupling for multi-quantum well sensor based on intersubband absorption Devices and techniques for coupling radiation to intraband quantum-well semiconductor sensors that are insensitive to the wavelength of the coupled radiation. At least one reflective surface is implemented in the quantum-well region to direct incident radiation towa... | 10/31/2006 |
| 7125733 | Method for producing an optical emission module having at least two vertically emitting lasers A method for producing an emission module having at least two vertically emitting lasers in which an optically active laser layer is arranged on a substrate and at least one upper covering layer is arranged on said laser layer. In a first etching step, upper mesa re... | 10/24/2006 |
| 7126977 | Surface emitting semiconductor laser and manufacturing method thereof, light module, light transmission device The invention provides surface emitting semiconductor laser where a transverse mode is controllable stably, a method of manufacturing it and a light module and a light transmission device including the surface emitting semiconductor laser are provided. A surface-emi... | 10/24/2006 |
| 7122846 | Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs) In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality ... | 10/17/2006 |
| 7115913 | Array substrate used for a display device and a method of making the same A TFT array substrate used for a display device and a method of making the same are disclosed. A optically transparent thick resin insulation film 5 is formed on a base substrate and an upper contact hole 51 is perforated through the optically transpar... | 10/03/2006 |
| 7112821 | Surface-emitting type light-emitting diode and fabrication method thereof Disclosed is a surface-emitting type light-emitting diode including a substrate, a p-n junction layer elevated on a portion of the substrate to emit light, and a first isolator layer formed on a sidewall of the p-n junction layer as well as a periphery portion of a ... | 09/26/2006 |
| 7105369 | Methods of fabricating planar PIN and APD photodiodes In one aspect the invention relates to a high bandwidth shallow mesa semiconductor photodiode responsive to incident electromagnetic radiation. The photodiode includes an absorption narrow bandgap layer, a wide bandgap layer disposed substantially adjacent to the ab... | 09/12/2006 |
| 7105448 | Method for peeling off semiconductor element and method for manufacturing semiconductor device A method for peeling off a thin film semiconductor element over an insulating surface by using a void, and a method for manufacturing a semiconductor device by transferring the peeled semiconductor element. According to the peeling method of the invention, a first b... | 09/12/2006 |
| 7105859 | Nitride semiconductor light-emitting diode chip and method of manufacturing the same A nitride semiconductor light emitting diode chip includes a transparent substrate and a nitride semiconductor stacked-layer structure formed on the upper surface of the substrate, the nitride semiconductor stacked-layer structure including a light-emitting layer an... | 09/12/2006 |
| 7098059 | Surface emitting semiconductor laser and process for producing the same including forming an insulating layer on the lower reflector A surface emitting semiconductor laser includes a substrate, a first semiconductor multilayer reflector formed on the substrate, an active region formed on the first semiconductor multilayer reflector, a second semiconductor multilayer reflector formed on the active... | 08/29/2006 |
| 7092421 | Unipolar, intraband optoelectronic transducers with micro-cavity resonators An optoelectronic transducer comprises a unipolar, intraband active region and a micro-cavity resonator. The resonator includes a 2D array of essentially equally spaced regions that exhibits resonant modes. Each of the spaced regions has a depth that extends through... | 08/15/2006 |
| 7087936 | Methods of forming light-emitting devices having an antireflective layer that has a graded index of refraction A light-emitting device includes a substrate that is at least partially transparent to optical radiation and has a first index of refraction. A diode region is disposed on a first surface of the substrate and is configured to emit light responsive to a voltage appli... | 08/08/2006 |
| 7087448 | Single frequency laser This invention relates to generally to semiconductor devices, for example lasers and more particularly to single frequency lasers and is directed at overcoming problems associated with the manufacture of these devices. In particular, a laser device is provided forme... | 08/08/2006 |
| 7087449 | Oxygen-doped Al-containing current blocking layers in active semiconductor devices An active semiconductor device, such as, buried heterostructure semiconductor lasers, LEDs, modulators, photodiodes, heterojunction bipolar transistors, field effect transistors or other active devices, comprise a plurality of semiconductor layers formed on a substr... | 08/08/2006 |
| 7083996 | Nitride semiconductor device and manufacturing method thereof A nitride semiconductor device includes a GaN substrate having a single-crystal GaN layer at least on its surface and plurality of device-forming layers made of nitride semiconductor. The device-forming layer contacting the GaN substrate has a coefficient of thermal... | 08/01/2006 |
| 7084044 | Optoelectronic device and method of manufacture thereof The present invention provides an optoelectronic device and a method of manufacture thereof. In one embodiment, the method of manufacturing the optoelectronic device may include creating a multilayered optical substrate and then forming a self aligned dual mask over... | 08/01/2006 |
| 7083994 | Method of manufacturing a semiconductor device with outline of cleave marking regions and alignment or registration features This invention generally relates to semiconductor devices, for example lasers and more particularly to single frequency lasers and is directed at overcoming problems associated with the manufacture of these devices. In particular, a laser device is provided formed o... | 08/01/2006 |
| 7084433 | Semiconductor laser device capable of maintaining the operation current low and method of manufacturing the same In this semiconductor laser device, an InGaP etching block layer 11 as an etching selection layer having etching selectivity for an n-type AlInP current block layer 10, which is a non-optical-absorption layer, is formed on the n-type current block laye... | 08/01/2006 |
| 7078256 | Nitride semiconductor LED improved in lighting efficiency and fabrication method thereof A nitride semiconductor LED improved in lighting efficiency and a fabrication method thereof, in which an n-doped semiconductor layer is formed on a substrate. An active layer is formed on the n-doped semiconductor layer to expose at least a partial area of the n-do... | 07/18/2006 |
| 7078257 | Surface emitting semiconductor laser, and method and apparatus for fabricating the same A method of fabricating a surface emitting semiconductor laser includes a first step of forming, on a substrate, multiple monitor-use semiconductor layers having stripes radiating from a center of the substrate, and a laser portion that includes semiconductor layers... | 07/18/2006 |
| 7073246 | Method of making a biosensor A method of making a biosensor is provided. The biosensor includes an electrically conductive material on a base and electrode patterns formed on the base, the patterns having different feature sizes. The conductive material is partially removed from the base using ... | 07/11/2006 |
| 7074633 | Nitride semiconductor laser diode and method for manufacturing the same Provided is a nitride semiconductor laser diode and a method for manufacturing the same. The method includes the steps of: a) forming a nitride semiconductor layer by orderly evaporating a substrate, an undoped GaN layer, an n-type layer, a multi-quantum well (MQW),... | 07/11/2006 |
| 7067339 | Selective growth method, and semiconductor light emitting device and fabrication method thereof At the time of selective growth of an active layer on a substrate, crystal is previously grown in an active layer non-growth region, and the active layer is grown in an active layer selective growth region. With this configuration, a source supplied to the non-growt... | 06/27/2006 |
| 7067340 | Flip-chip light emitting diode and fabricating method thereof A flip-chip light emitting diode and fabricating methods are disclosed. A soft transparent adhesive layer is utilized to past a transparent conductive substrate onto a light emitting diode epitaxy structure on a substrate, and the substrate is next removed entirely.... | 06/27/2006 |
| 7065116 | Semiconductor laser element and manufacturing method for the same A semiconductor laser element comprising: a clad layer of a first conductivity type; an active layer; a first clad layer of a second conductivity type; a ridge made of a second clad layer of the second conductivity type and a cap layer of the second conductivity typ... | 06/20/2006 |
| 7063997 | Process for producing nitride semiconductor light-emitting device A process for producing a nitride semiconductor light-emitting device includes the steps of preparing a substrate, growing a p-type nitride semiconductor layer on the substrate by the MOCVD process using hydrazine-based gas as a nitrogen precursor and N2 ... | 06/20/2006 |
| 7060542 | Display system and method of producing the same Disclosed are a display system and a method of producing the same. In the present invention, a hexagonal pyramid shaped GaN semiconductor light-emitting device selectively crystal-grown is fixed on an upper surface of a substrate by embedding it in an insulation lay... | 06/13/2006 |
| 7055975 | Microelectromechanical system with non-collinear force compensation A microelectromechanical system is disclosed that constrains the direction of a force acting on a first load, where the force originates from the interaction of the first load and a second load. In particular, the direction of a force acting on the first load is cau... | 06/06/2006 |
| 7057337 | Patterning of electrodes in OLED devices An OLED device having pillars with cross section that is wider on the top. The pillars structure a conductive layer during deposition into distinct portions located between the pillars and on the top of the pillars. The pillars are formed by patterning a single phot... | 06/06/2006 |
| 7054512 | Optical waveguide, optical device, and method of manufacturing optical waveguide An optical waveguide is formed on a substrate and includes a curved ridge structure, a curved optical path, and a buffer layer. The curved ridge structure is formed on the substrate so as to have a curvature in a longitudinal direction of the curved ridge structure.... | 05/30/2006 |
| 7049630 | Electrode patterning in OLED devices An OLED device having pillars with a cross section that is wider on the top. The pillars structure a conductive layer during deposition into distinct portions located between the pillars and on the top of the pillars. In one embodiment, the grooves between the pilla... | 05/23/2006 |
| 7045810 | Monolithic multiple-wavelength laser device and method of fabricating the same A monolithic multiple-wavelength laser device includes a laser section of a first wavelength and a laser section of a second wavelength formed on a single GaAs substrate, wherein the laser section f the first wavelength includes a real guide structure, and the laser... | 05/16/2006 |
| 7042023 | Semiconductor light emitting device and method for producing the same A semiconductor light emitting device includes a semiconductor substrate; a stacked semiconductor structure formed on the semiconductor substrate; a striped ridge structure; and a semiconductor current confinement layer provided on a side surface of the striped ridg... | 05/09/2006 |
| 7038288 | Front side illuminated photodiode with backside bump This invention relates to a novel optoelectronic chip with one or more optoelectronic devices, such as photodiodes, fabricated on a front side of a semiconductor wafer and contacts on a backside of the semiconductor wafer. The backside contacts can be contact bumps,... | 05/02/2006 |
