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| Number | Title | Issue Date |
| 7309875 | Nanocrystal protective layer for crossbar molecular electronic devices A molecular device is provided. The molecular device comprises a junction formed by a pair of crossed electrodes where a first electrode is crossed by a second electrode at a non-zero angle and at least one connector species including at least one switchable moiety ... | 12/18/2007 |
| 7309879 | Semiconductor laser, manufacturing the same and semiconductor laser device A semiconductor laser element capable of reducing the contact resistance and the thermal resistance and realizing a high reliability is provided. The semiconductor laser element includes: a semiconductor substrate, an active layer formed on the semiconductor substra... | 12/18/2007 |
| 7303933 | Process of manufacturing a semiconductor device A process of manufacturing a semiconductor device includes the steps of forming a stacked structure of a first III-V compound semiconductor layer containing In and having a composition different from InP and a second III-V compound semiconductor layer containing In.... | 12/04/2007 |
| 7300808 | Optically pumped, surface-emitting semiconductor laser device and method for the manufacture thereof The invention is directed to an optically pumped surface-emitting semiconductor laser device having at least one radiation-generating quantum well structure and at least one pump radiation source for optically pumping the quantum well structure, whereby the pump rad... | 11/27/2007 |
| 7298136 | Magnetically coupled electrical test lead An electrical test lead includes an insulated electrical cable having a proximal end and a distal end, an electrical connector disposed at the proximal end of the cable and connected to a test instrument, and an electrically conductive magnetic probe disposed at the... | 11/20/2007 |
| 7294519 | Semiconductor light-emitting device and method of manufacturing the same Provided are a semiconductor light-emitting device having nano-needles and a method of manufacturing the same. The provided semiconductor light-emitting device improves the extraction efficiency of photons, and includes a gallium nitride (GaN) group multi-layer and ... | 11/13/2007 |
| 7291529 | Methods of processing semiconductor wafer backsides having light emitting devices (LEDs) thereon Processing a semiconductor wafer can include forming a plurality of Light Emitting Devices (LED) on a semiconductor wafer having a first thickness. The plurality of LEDs on the wafer are brought into contact with a surface of a carrier to couple the wafer to the car... | 11/06/2007 |
| 7288446 | Single and double-gate pseudo-FET devices for semiconductor materials evaluation Several methods and structures are disclosed for determining electrical properties of silicon-on-insulator (SOI) wafers and alternate versions of such wafers such as strained silicon:silicon/germanium:-on-insulator (SSGOI) wafers. The analyzed electrical properties ... | 10/30/2007 |
| 7287318 | Biosensor A biosensor is provided that comprises a plate element with a pre-determined reaction zone and a recess positioned adjacent to the reaction zone. The biosensor also comprises a reagent that is positioned on the reaction zone. In preferred embodiments, the recess cir... | 10/30/2007 |
| 7288422 | Photonic integrated device using reverse-mesa structure and method for fabricating the same A photonic integrated device using a reverse-mesa structure and a method for fabricating the same are disclosed. The photonic integrated device includes a first conductive substrate on which a semiconductor laser, an optical modulator, a semiconductor optical amplif... | 10/30/2007 |
| 7282455 | Method of producing a diffraction grating In an embodiment, a method of producing a diffraction grating comprises steps of: forming, on a man surface of a first member, a first mask having a plurality of resist patterns arranged at a Bragg diffraction period; etching the first member by use of the first mas... | 10/16/2007 |
| 7279349 | Semiconductor optical device and manufacturing method thereof In a dry etching step for an organic material film, a fluorine-containing member is disposed to the periphery of a semiconductor substrate disposed on a lower electrode or a tray for wafer transportation to form fluorine (fluoro-radicals) from the member per se in a... | 10/09/2007 |
| 7279347 | Method for manufacturing a light-emitting structure of a light-emitting device (LED) A method for manufacturing a light-emitting structure of a light-emitting device (LED) is disclosed. The white colored LED includes a resonant cavity structure, producing and mixing lights which may mix into a white colored light in the resonant cavity structure, so... | 10/09/2007 |
| 7279346 | Method for packaging a light emitting device by one dispense then cure step followed by another Methods of packaging a semiconductor light emitting device positioned in a reflective cavity are provided. A first quantity of encapsulant material is dispensed into the reflective cavity including the light emitting device therein and the first quantity of encapsul... | 10/09/2007 |
| 7276724 | Series interconnected optoelectronic device module assembly Series interconnection of optoelectronic device modules is disclosed. Each device module includes an active layer disposed between a bottom electrode and a transparent conducting layer. An insulating layer is disposed between the bottom electrode of a first device m... | 10/02/2007 |
| 7271019 | Lateral heat spreading layers for epi-side up ridge waveguide semiconductor lasers Disclosed are a semiconductor device and method of manufacturing the same comprising a substrate, a mesa region adjacent to the substrate, an electroplated metal layer, for reducing the thermal resistance of the device, surrounding the mesa region, an insulator laye... | 09/18/2007 |
| 7265389 | Light emitting diode and fabricating method thereof A method for fabricating a light emitting diode (LED) is provided. Successively forming a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer on an epitaxy substrate; forming a bonding layer thereon; bonding a tra... | 09/04/2007 |
| 7259402 | High efficiency group III nitride-silicon carbide light emitting diode A method and resulting structures are disclosed for fabricating a high efficiency high extraction light emitting diode suitable for packaging. The method includes the steps of adding a light emitting active portion of wide-bandgap semiconductor material to a conduct... | 08/21/2007 |
| 7255978 | Multi-level optical structure and method of manufacture A multi-level optical device includes a substrate having a baseline level. At least one feature is disposed at a level above the baseline level. At least one feature is disposed at a level below the baseline level, or in the feature above the baseline level is locat... | 08/14/2007 |
| 7250319 | Method of fabricating quantum features A method of fabricating quantum features on a substrate from a layer of material selected from materials identified in the III-V periodic groups (e.g., silicon (Si), InP, Si—Ge, and the like) uses sequentially two patterned masks, each mask includes an ... | 07/31/2007 |
| 7251264 | Distributed bragg reflector for optoelectronic device This disclosure concerns devices such as DBRs, one example of which includes at least one first mirror layers having an oxidized region extending from an edge of the DBR to an oxide termination edge that is situated greater than a first distance from the edge of the... | 07/31/2007 |
| 7244629 | Vertical cavity surface emitting laser diode and method for manufacturing the same In a vertical cavity surface emitting laser diode manufactured on a non-off-angle substrate with a (100)-oriented plane or the like, anisotropic stress is applied to a central portion of an active layer by forming a asymmetrical oxidation structure in an Al high con... | 07/17/2007 |
| 7235131 | Method for forming a single crystalline film A method for forming a single crystalline film including the steps of forming an amorphous film on a single crystalline substrate, forming an opening in the amorphous film and thereby exposing a part of a surface of the substrate, and introducing atomic beams, molec... | 06/26/2007 |
| 7236279 | Digital optical switch apparatus and process for manufacturing same The present invention provides a digital optical switch apparatus and process for manufacturing the apparatus. The apparatus includes a mirror assembly coupled to a top cap and to a bottom cap. The top and bottom caps each include one or more electrodes that, when e... | 06/26/2007 |
| 7218660 | Single-mode vertical cavity surface emitting lasers and methods of making the same In one aspect, a vertical cavity surface emitting laser (VCSEL) is operable to generate single-mode laser light at an operative wavelength. The VCSEL includes a light-emitting surface and a monolithic longitudinal stack structure. The longitudinal stack structure in... | 05/15/2007 |
| 7208770 | Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs) In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality ... | 04/24/2007 |
| 7195998 | Compound semiconductor device and manufacturing method thereof A compound semiconductor device including: an isolated mesa section on which an upper surface having two pairs of parallel sides is formed by mesa etching a compound semiconductor wafer, wherein the mesa section is formed from at least a forward mesa surface which i... | 03/27/2007 |
| 7190005 | GaN LED with solderable backside metal A light-emitting element (24) is disclosed. A light emitting diode (LED) includes a sapphire substrate (26) having front and back sides (33, 35), and a plurality of semiconductor layers (28, 30, 32) deposited on the front side (33)... | 03/13/2007 |
| 7180239 | Display device with openings in an insulating structure The invention relates to a device, such as an electro-luminescent display device, comprising a substrate, first electrodes which are arranged over the substrate, second electrodes which are arranged over the first electrodes and at least one electrically insulating ... | 02/20/2007 |
| 7180926 | Surface emitting semiconductor laser A surface emitting semiconductor laser is formed from a substrate having a first mirror formed thereon. The first mirror includes semiconductor layers of a first conductivity type. A second mirror is formed over the substrate and includes semiconductor layers of a s... | 02/20/2007 |
| 7176045 | Laser diode operable in 1.3 μm or 1.5 μm wavelength band with improved efficiency A laser diode includes an active layer of a group III-V compound semiconductor device containing N and As as the group V elements. The active layer has exposed lateral edges wherein the N atoms are substituted by the As atoms at the exposed lateral edges by an annea... | 02/13/2007 |
| 7177490 | Optical waveguide, optical device, and method of manufacturing optical waveguide An optical waveguide is formed on a substrate and includes a curved ridge structure, a curved optical path, and a buffer layer. The curved ridge structure is formed on the substrate so as to have a curvature in a longitudinal direction of the curved ridge structure.... | 02/13/2007 |
| 7177339 | Semiconductor laser A semiconductor laser has implantation regions that are effective as mode-selective regions in addition to current diaphragms in the edge region of a mesa. As a result, the inner opening of the current diaphragms can be chosen to be larger than in the prior art. Thi... | 02/13/2007 |
| 7172914 | Method of making uniform oxide layer A method of forming a semiconductor structure includes forming an isolation region in a semiconductor substrate. A first oxide layer is on the substrate, a first sacrificial layer is on the first oxide layer, and a first nitride layer is on the first sacrificial lay... | 02/06/2007 |
| 7170108 | Semiconductor light-emitting device and method for fabricating the same An n-type buffer layer composed of n-type GaN, an n-type cladding layer composed of n-type AlGaN, an n-type optical confinement layer composed of n-type GaN, a single quantum well active layer composed of undoped GaInN, a p-type optical confinement layer composed of... | 01/30/2007 |
| 7166483 | High brightness light-emitting device and manufacturing process of the light-emitting device A light-emitting device comprises a multi-layer structure including one or more active layer configured to irradiate light in response to the application of an electric signal, a transparent passivation layer laid over an outmost surface of the multi-layer stack, a ... | 01/23/2007 |
| 7160747 | Methods of forming semiconductor devices having self aligned semiconductor mesas and contact layers Methods of forming a semiconductor device can include forming a semiconductor structure on a substrate, the semiconductor structure having mesa sidewalls and a mesa surface opposite the substrate. A contact layer can be formed on the mesa surface wherein the contact... | 01/09/2007 |
| 7157743 | Surface-emitting light-emitting device and method of manufacturing the same, optical module, and light-transmission device A surface-emitting light-emitting device, which can control optical characteristics of emitting light and the manufacturing method thereof, an optical module which includes the surface-emitting light-emitting device, and a light-transmission device are provided. A s... | 01/02/2007 |
| 7157298 | Surface emitting semiconductor laser, and method and apparatus for fabricating the same A method of fabricating a surface emitting semiconductor laser includes the following steps. A first laminate of semiconductor layers and a second laminate of semiconductor layers are formed on a substrate. The first laminate includes a first reflection mirror layer... | 01/02/2007 |
| 7148129 | Method of growing selective area by metal organic chemical vapor deposition A method of growing a semiconductor layer in a selective area by Metal Organic Chemical Vapor Deposition (MOCVD) and a mask pattern for s ame, includes a first mask pattern and a second mask pattern that are formed on a semiconductor substrate having a (100) crystal... | 12/12/2006 |
