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| Number | Title | Issue Date |
| 8093081 | Device of light-emitting diode and method for fabricating the same A device of a light-emitting diode and a method for fabricating the same are provided. The LED device is made by forming a patterned epitaxial layer, a light-emitting structure, etc., on a substrate. In a subsequent process, the patterned epitaxial layer serves as a... | 01/10/2012 |
| 8039282 | Semiconductor optical device and method of fabricating the same In a method of fabricating a semiconductor optical device, a semiconductor region is formed by growing an InP lower film, a active region, an InP upper film and a capping film on a substrate sequentially. Material of the capping film is different from that of InP. N... | 10/18/2011 |
| 8034648 | Epitaxial regrowth in a distributed feedback laser Optimizing the regrowth over epitaxial layers during manufacture of a distributed feedback laser. In one example embodiment, a method for depositing an InP regrowth layer on an epitaxial base portion of a distributed feedback laser includes growing a first portion o... | 10/11/2011 |
| 7998771 | Manufacturing method of light emitting diode including current spreading layer Provided is a method of manufacturing a light emitting diode using a nitride semiconductor, which including the steps of: forming n- and p-type current spreading layers using a hetero-junction structure; forming trenches by dry-etching the n- and p-type current spre... | 08/16/2011 |
| 7998770 | Method for forming a semiconductor light-emitting device A semiconductor light-emitting device with a new layer structure is disclosed, where the current leaking path is not caused to enhance the current injection efficiency within the active layer. The device provides a mesa structure containing active layer and a p-type... | 08/16/2011 |
| 7964424 | Method for manufacturing nitride semiconductor light-emitting element A method for manufacturing a nitride semiconductor light-emitting element comprises: forming a semiconductor laminated structure wherein an n-type nitride semiconductor epitaxial layer, an active layer, and a p-type nitride semiconductor epitaxial layer are laminate... | 06/21/2011 |
| 7964423 | Semiconductor device and method for manufacturing the same The invention relates to a semiconductor device and a method for manufacturing the semiconductor device, which includes: an insulating film over a substrate; a first pixel electrode embedded in the insulating film; an island-shaped single-crystal semiconductor layer... | 06/21/2011 |
| 7947520 | Semiconductor laser and method of making the same In the method of making a semiconductor laser, a semiconductor region is grown on an active layer, and a part of the semiconductor region is etched to form a ridge structure. An insulating film is formed over the ridge structure, and a resin layer of photosensitive ... | 05/24/2011 |
| 7943407 | Method for manufacturing semiconductor laser A method for manufacturing a semiconductor laser includes the steps of forming a mask layer having a stripe-shaped mask portion corresponding to a ridge stripe to be formed on a nitride-based group III-V compound semiconductor layer, etching the nitride-based group ... | 05/17/2011 |
| 7943406 | LED fabrication via ion implant isolation A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, an... | 05/17/2011 |
| 7935553 | Method for fabricating high density pillar structures by double patterning using positive photoresist A method of making a semiconductor device includes forming a first photoresist layer over an underlying layer, patterning the first photoresist layer into a first photoresist pattern, wherein the first photoresist pattern comprises a plurality of spaced apart first ... | 05/03/2011 |
| 7871841 | Method for manufacturing semiconductor light-emitting device A method of manufacturing a semiconductor light-emitting device includes steps of forming a vertical cavity structure including a layer to be oxidized on a semiconductor substrate, and then forming a circular groove having a depth which penetrates at least the layer... | 01/18/2011 |
| 7871840 | Method for manufacturing semiconductor optical device using inductive coupled plasma-enhance CVD The present invention provides a semiconductor laser diode prevents not only the adhesion of the upper electrode but the heat dissipation of the mesa from degrading. The laser diode includes a substrate, portion of which forms a mesa including an active layer, an in... | 01/18/2011 |
| 7842530 | Method of manufacturing vertical cavity surface emitting laser and method of manufacturing laser array, vertical cavity surface emitting laser and laser array, and image forming apparatus with laser array A method of manufacturing a vertical cavity surface emitting laser of a mesa structure, the method comprises: sequentially laminating on a substrate a plurality of semiconductor layers including a bottom reflecting mirror, an active layer, a selective oxidation laye... | 11/30/2010 |
| 7816162 | Semiconductor device manufacturing method After a p-type cladding layer, an etching rate reducing layer and a p-type contact layer are formed in order on an n-type substrate, an etching mask is formed. Then, by using the etching mask, the p-type contact layer, the etching rate reducing layer and the p-type ... | 10/19/2010 |
| 7807490 | Manufacturing method of nitride semiconductor device and nitride semiconductor device Provided is a manufacturing method of a nitride semiconductor device having a nitride semiconductor substrate (e.g. GaN substrate) in which dislocation concentrated regions align in stripe formation, the dislocation concentrated regions extending from a front surfac... | 10/05/2010 |
| 7807489 | Light-emitting device with a protection layer to prevent the inter-diffusion of zinc (Zn) atoms A light-emitting device with a protection layer for Zn inter-diffusion and a process to form the device are described. The device of the invention provides an active layer containing aluminum (Al) as a group III element, typically AlGaInAs, and protection layers con... | 10/05/2010 |
| 7772023 | Method of producing semiconductor optical device Si atoms obtained by thermal decomposition of SiH4 are adsorbed in advance on one surface of a semiconductor substrate and side surfaces of a semiconductor mesa part. Thereby, prior to the growth of a buried layer, a diffusion protection layer composed of... | 08/10/2010 |
| 7736925 | Method of fabricating nitride-based semiconductor laser diode A method of manufacturing a nitride-based semiconductor laser diode that can minimize optical absorption on a cavity mirror plane and improve the surface roughness of the cavity mirror plane is provided. The method includes the steps of: forming on a (0001) GaN (gal... | 06/15/2010 |
| 7732235 | Method for fabricating high density pillar structures by double patterning using positive photoresist A method of making a semiconductor device includes forming a first photoresist layer over an underlying layer, patterning the first photoresist layer into a first photoresist pattern, wherein the first photoresist pattern comprises a plurality of spaced apart first ... | 06/08/2010 |
| 7449354 | Trench-gated FET for power device with active gate trenches and gate runner trench utilizing one-mask etch A trench-gated field effect transistor (FET) is formed as follows. Using one mask, a plurality of active gate trenches and at least one gate runner trench are defined and simultaneously formed in a silicon region such that (i) the at least one gate runner trench has... | 11/11/2008 |
| 7445949 | Method of manufacturing semiconductor laser device structure A method of manufacturing a semiconductor laser device is provided. First, a first mask layer is formed on an epitaxial structure to define a protrudent area in a ridge structure. Thereafter, a conformal second mask layer is formed over the epitaxial structure to co... | 11/04/2008 |
| 7439091 | Light-emitting diode and method for manufacturing the same A light-emitting diode (LED) and a method for manufacturing the same are described. The method for manufacturing the LED comprises the following steps. An illuminant epitaxial structure is provided, in which the illuminant epitaxial structure has a first surface and... | 10/21/2008 |
| 7411220 | Semiconductor light emitting device and manufacturing method thereof A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. The semiconductor layer can inc... | 08/12/2008 |
| 7399657 | Ball grid array packages with thermally conductive containers Ball grid array packages for semiconductor die include a thermally conductive container and a substrate that substantially enclose a semiconductor die. The die is positioned with respect to the container by thermally conductive supports formed in the container or at... | 07/15/2008 |
| 7396476 | Method for reducing harmonic distortion in comb drive devices Methods of fabricating comb drive devices utilizing one or more sacrificial etch-buffers are disclosed. An illustrative fabrication method may include the steps of etching a pattern onto a wafer substrate defining one or more comb drive elements and sacrificial etch... | 07/08/2008 |
| 7374959 | Two-wavelength semiconductor laser device and method of manufacturing the same A two-wavelength semiconductor laser device includes a first conductive material substrate having thereon first and second regions separated from each other. A first semiconductor laser diode is formed on the first region. A non-active layer is formed on the second ... | 05/20/2008 |
| 7371595 | Method for manufacturing semiconductor laser device A method for manufacturing a semiconductor laser device is provided in which deformation of a cap layer and a third cladding layer is inhibited and a protruding portion of an intermediate layer is removed. By coating outer peripheral portions facing an intermediate ... | 05/13/2008 |
| 7365371 | Packages for semiconductor light emitting devices utilizing dispensed encapsulants A submount for mounting an LED chip includes a substrate, a die attach pad configured to receive an LED chip on an upper surface of the substrate, a first meniscus control feature on the substrate surrounding the die attach pad and defining a first encapsulant regio... | 04/29/2008 |
| 7358537 | Light emitting diode and fabrication method thereof A light emitting diode (LED). The LED comprises a LED chip comprising an n-type semiconductor layer, a active layer and a p-type semiconductor layer. An n-type ohmic contact electrode and a p-type ohmic contact electrode electrically contact the n-type semiconductor... | 04/15/2008 |
| 7355212 | Light emitting element An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with ... | 04/08/2008 |
| 7344904 | Method of fabricating laser diode Provided is a method of fabricating a laser diode. Embodiments of the method include sequentially forming at least a lower clad layer, a resonance layer, an upper clad layer, an upper contact layer, an upper electrode layer, and a sacrificial layer on a substrate; f... | 03/18/2008 |
| 7341175 | Bonding of light emitting diodes having shaped substrates Bonding of flip-chip mounted light emitting devices having an irregular configuration is provided. Light emitting diodes having a shaped substrate are bonded to a submount by applying forces to the substrate an a manner such that shear forces within the substrate do... | 03/11/2008 |
| 7338827 | Nitride semiconductor laser and method for fabricating the same A method for fabricating nitride semiconductor devices according to the present invention includes the steps of: (A) providing a nitride semiconductor substrate, which will be split into chip substrates, which includes device portions that will function as the respe... | 03/04/2008 |
| 7335519 | Method for manufacturing a light-emitting diode A method for manufacturing a light-emitting diode (LED) is disclosed. In the method, a substrate is firstly provided, in which a first conductivity type cladding layer, an active layer, a second conductivity type cladding layer, a superlattice contact layer and a tr... | 02/26/2008 |
| 7335916 | Electrode structure, and semiconductor light-emitting device having the same A semiconductor light emitting device comprising: a transparent substrate; an electron injection layer of N-type GaN-based semiconductor; an active layer on the electron injection layer; a hole injection layer of P-type GaN-based semiconductor on the active layer; a... | 02/26/2008 |
| 7329569 | Methods of forming semiconductor devices including mesa structures and multiple passivation layers A method of forming a semiconductor device may include forming a semiconductor structure on a substrate wherein the semiconductor structure defines a mesa having a mesa surface opposite the substrate and mesa sidewalls between the mesa surface and the substrate. A f... | 02/12/2008 |
| 7326583 | Methods for packaging of a semiconductor light emitting device Methods of packaging a semiconductor light emitting device in a reflector having a moat positioned between a lower and an upper sidewall thereof, the upper and lower sidewall defining a reflective cavity, include dispensing encapsulant material into the reflective c... | 02/05/2008 |
| 7319076 | Low resistance T-shaped ridge structure A method and apparatus to provide a low resistance interconnect. A void is defined in the sacrificial layer that is proximate to an active layer. An overgrowth layer is formed in the void and over portions of the sacrificial layer adjacent to the void. A ridge secti... | 01/15/2008 |
| 7314771 | Organic light emitting element, display apparatus having the same and method of manufacturing the same A method of manufacturing a display apparatus includes: forming a peripheral circuit, a first electrode and a bank on a substrate; forming a surface energy lowering pattern on the bank; forming an organic light emitting member on the first electrode; and forming a s... | 01/01/2008 |
