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| Number | Title | Issue Date |
| 5403775 | Method of making semiconductor devices and techniques for controlled optical confinement The disclosure is directed to improved techniques and devices employing an aluminum-bearing III-V semiconductor material and a native oxide of aluminum that is formed in the semiconductor material. Effective optical confinement, tailored to obtain desired... | 04/04/1995 |
| 5316968 | Method of making semiconductor surface emitting laser The present applicant has discovered that one can make a surface emitting laser with enhanced operating characteristics by etching away the outer reflector stack peripheral to the intended active area and protecting the reflector stack mesa remaining over... | 05/31/1994 |
| 5284792 | Full-wafer processing of laser diodes with cleaved facets A method for full-wafer processing of laser diodes with cleaved facets combining the advantages of full-wafer processing, to date known from processing lasers with etched facets, with the advantages of cleaved facets. The steps being: defining the positio... | 02/08/1994 |
| 5260231 | Method for the production of a semiconductor laser A semiconductor laser device is disclosed which emits laser light from a facet. The semiconductor laser device comprises a multi-layered structure formed on a semiconductor substrate, the multi-layered structure having an AlGaAs active layer for laser osc... | 11/09/1993 |
| 5177031 | Method of passivating etched mirror facets of semiconductor laser diodes A method of passivating etched mirror facets of semiconductor laser diodes which enhances device reliability. The etched mirror facet is first subjected to a weet-etch process to substantially remove any native oxide as well as any surface layer which may... | 01/05/1993 |
| 5171706 | Method for the production of a semiconductor laser device There is provided a method for the production of a semiconductor laser device which emits laser light from a facet. The method includes the steps of: growing a multi-layered structure containing an active layer for laser oscillation on a semiconductor sub... | 12/15/1992 |
| 5171717 | Method for batch cleaving semiconductor wafers and coating cleaved facets A method for cleaving semiconductor wafers, or segments thereof, which comprises placing the wafer, provided with scribe lines defining the planes where cleaving is to take place, inbetween a pair of flexible transport bands and guiding it around a curved... | 12/15/1992 |
| 5147827 | Method for producing a passivation film of InP compound semiconductor A device such as a phototransistor, a photodiode, a laser diode or the like including a compound semiconductor coated with a stable passivation film to reduce leakage current is disclosed. The passivation film includes oxygen, a metallic element and const... | 09/15/1992 |
| 5063173 | Method for mirror passivation of semiconductor laser diodes A method for passivating mirrors in the process of fabricating semiconductor laser diodes is disclosed. Key steps of the method are: (1) providing a contamination-free mirror facet, followed by (2) an in-situ application of a continuous, insulating (or lo... | 11/05/1991 |
| 4985370 | Method of manufacturing semiconductor laser device The invention relates a method of manufacturing a semiconductor laser device having a coating on surfaces of a semiconductor body intended for emanation of a laser beam.... | 01/15/1991 |
| 4895615 | Monolithic fabrication techniques for front face optoelectronic couplers and/or optical components including ridge structured waveguides The invention involves a method for the monolithic fabrication of front face optoelectronic couplers and/or optical components (10) including a ridge structured waveguide (4) in which the light-coupling edges (2) of the component (10) using a mask in the ... | 01/23/1990 |
| 4855256 | Method of manufacturing masked semiconductor laser A masking layer is formed on the light-emitting mirror surface of a semiconductor laser body. The masking layer is capable of blocking light emitted from the semiconductor laser body and of being thermally melted and evaporated by exposure to the emitted ... | 08/08/1989 |
| 4840922 | Method of manufacturing masked semiconductor laser A masking layer is formed on the light-emitting mirror surface of a semiconductor laser body. The masking layer is capable of blocking or cutting off light emitted from the semiconductor laser body and of being made optically transparent by exposure to th... | 06/20/1989 |
| 4830986 | Laser manufacture A ridge waveguide laser structure is manufactured by a method including providing a photoresist stripe (8) on an exposed area of a p cap layer (4) of a multilayer laser wafer; etching channels (9) through the cap layer (4) and a p passive layer (3) using ... | 05/16/1989 |
| 4789642 | Method for fabricating low loss crystalline silicon waveguides by dielectric implantation A method of fabricating low loss silicon optical waveguides by high energy ion implantation which converts a buried region into dielectric material. The top silicon surface can them be etched or formed into waveguides that are isolated by the buried diele... | 12/06/1988 |
| 4696828 | Passivation of InP by plasma deposited phosphorus Pnictide thin films, particularly phosphorus, grown on III-V semiconductors, particularly InP, GaP, and GaAs, are amorphous and have a novel layer-like, puckered sheet-like local order. The thin films are typically 400 Angstroms thick and grown preferably... | 09/29/1987 |
| 4653858 | Method of fabrication of diode-type control matrices for a flat electrooptical display screen and a flat screen constructed in accordance with said method Diode-type control matrix arrays for electrooptical flat-panel screens which find application in liquid-crystal displays are fabricated by depositing a layer of conductive material on a substrate and etching the control electrodes and control leads in thi... | 03/31/1987 |
| 4617192 | Process for making optical INP devices The invention is a process for putting down coatings of aluminum oxide on optical surfaces using electron-beam deposition in an oxygen-enriched atmosphere. Particularly good results are obtained when oxygen is flowed over or directed at the surface to be ... | 10/14/1986 |
| 4612211 | Selective semiconductor coating and protective mask therefor An improved method of selectively depositing coatings onto bodies of semiconductor material employs as a protective mask an alkyl ester of a sulfosuccinate salt. The mask material is applied to areas which are to be kept free of the coatings. The overspra... | 09/16/1986 |
| 4563368 | Passivation for surfaces and interfaces of semiconductor laser facets or the like A method of making a facet coating for a semiconductor light emitting device, such as a semiconductor laser or the like, comprising the steps of depositing a thin layer of a reactive material on the cleaved facet to getter oxygen and other reactive contam... | 01/07/1986 |
| 4510607 | Semiconductor laser end-facet coatings for use in solid or liquid environments An improvement for a semiconductor laser allows the facet reflectivity to be modified to compensate for the presence of a liquid or transparent solid medium having an index of refraction nm. A first dielectric coating is disposed on an end-face... | 04/09/1985 |
| 4407061 | Fabrication procedure using arsenate glasses A fabrication technique is described for making various devices in which a certain type of glass is used as a surface protection layer. The glass layers are formed by particle bombardment (generally sputtering or E-beam) of a glass target. Devices with su... | 10/04/1983 |
| 4356210 | Method for forming a protecting film on side walls of a semiconductor device A method for forming a protecting film on the side walls of a semiconductor device having an exposed PN junction at the side walls, e.g. a semiconductor laser, involves placing the device on a substrate target made of a protecting film material. Energetic... | 10/26/1982 |
| 4236296 | Etch method of cleaving semiconductor diode laser wafers Double heterostructure (Al,Ga)As wafer comprising layers of gallium arsenide and aluminum gallium arsenide on a metallized n-GaAs substrate are separated into individual devices for use as diode lasers. In contrast to prior art techniques of mechanically ... | 12/02/1980 |
| 4230997 | Buried double heterostructure laser device A buried double heterostructure laser device isdescribed. A wafer of double heterostructure material is formed into narrow mesa stripes. A native oxide coating is formed on the side walls of the mesa. Semiconductor material having an index of refraction w... | 10/28/1980 |
| 4095011 | Electroluminescent semiconductor device with passivation layer A semiconductor device has a body of a semiconductor material wherein arsenic, As, is a constituent component of the material. A passivation layer of a material selected from the group consisting of arsenic sulfide, As2 S3, arsenic s... | 06/13/1978 |
