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| Number | Title | Issue Date |
| 5108948 | Method of producing a semiconductor device having a disordered superlattice using an epitaxial solid diffusion source A method of producing a semiconductor device such as a semiconductor laser having a controllably disordered superlattice. The superlattice is grown epitaxially and in the same epitaxial growth process a heavily selenium doped semiconductor layer is also g... | 04/28/1992 |
| 5108949 | Semiconductor laser and laser fabrication method A planar type semiconductor laser having p-side and n-side electrodes on the same side of the substrate. The substrate carries a number of layers including lower and upper cladding layers sandwiching an active layer. Both of the cladding layers are of n-t... | 04/28/1992 |
| 5102825 | Method of making an ion-implanted planar-buried-heterostructure diode laser Planar-buried-heterostructure, graded-index, separate-confinement-heterostructure semiconductor diode laser 10 includes a single quantum well or multi-quantum well active stripe 12 disposed between a p-type compositionally graded Group III-V cladding leve... | 04/07/1992 |
| 5071786 | Method of making multiple wavelength p-n junction semiconductor laser with separated waveguides A multiple wavelength semiconductor laser with two active layers separated by either a p-cladding layer of a p-n junction cladding layers. A p-disordered region and a n-disordered region extend through one of the active layers and into the intermediate cl... | 12/10/1991 |
| 5061656 | Method for making a self-aligned impurity induced disordered structure A method for making a self-aligned IID structure for an LED (10) is provided. This self-aligned IID structure is accomplished by depositing a dopant layer (17) over the LED structure. A polymeric material is deposited over layer (17). The polymeric layer ... | 10/29/1991 |
| 5047366 | Method of diffusing silicon into compound semiconductors and compound semiconductor devices A method of diffusing Si into compound semiconductor from a Si film provided on a surface region of the compound semiconductor, wherein the diffusion is conducted with providing a diffusion stopper layer at a position of predetermined depth from the surfa... | 09/10/1991 |
| 5013684 | Buried disordering sources in semiconductor structures employing photo induced evaporation enhancement during in situ epitaxial growth In situ removal of selected or patterned portions of semiconductor layers is accomplished by induced evaporation enhancement to form patterned buried impurity layers in semiconductor devices, such as heterostructure lasers and array lasers, which function... | 05/07/1991 |
| 4999310 | Method of making an LED array A method of making an LED array capable of enhancing an internally generated light density with heterojunction by supporting the LED array with a current injection region by growing heterogeneous film and diffusing a zinc impurity. The improved LED array ... | 03/12/1991 |
| 4990466 | Method for fabricating index-guided semiconductor laser A method of altering a refractive index, as for an optical waveguide, as in a buried heterostructure laser, by inducing disordering in a region of a semiconducotr body comprises exposing a surface portion of the semiconductor body to plasma etching, coati... | 02/05/1991 |
| 4980313 | Method of producing a semiconductor laser A method of producing a semiconductor laser including deposition a first film as a source of n type impurities on a portion of a semiconductor structure produced by growing at least a p type lower cladding layer, a quantum well active layer, and an n type... | 12/25/1990 |
| 4957879 | Method of making a semiconductor laser using superlattice disordering A buried heterojunction semiconductor laser appropriate for integration with other electronic circuitry and method of producing same, in which the width of a central stripe of the active region can be reduced beyond the physical size limitations of the co... | 09/18/1990 |
| 4937835 | Semiconductor laser device and a method of producing same A seminconductor laser device includes a hetero-junction structure disposed in a groove in a semi-insulating semiconductor substrate having a first conductivity type first cladding layer, a quantum well active layer, and a first or second conductivity typ... | 06/26/1990 |
| 4933301 | Method of forming a semiconductor laser A method of making semiconductor laser arrays having an impurity disordered pattern of waveguides at least some of which are directly joined at branching junctions. The region near the branching junctions provides a phase boundary condition in which light... | 06/12/1990 |
| 4879256 | Method of controlling the order-disorder state in a semiconductor device An ordered-disordered transition is observed in semiconductor alloys which enables either the ordered or disordered structure to be produced.... | 11/07/1989 |
| 4871690 | Semiconductor structures utilizing semiconductor support means selectively pretreated with migratory defects Different diffusion rates can be made operative relative to diffusion disordering in designated areas of a thin active layer or of quantum well feature compared to thermal disordering in other areas thereof where disordering is not desired by the selectiv... | 10/03/1989 |
| 4843032 | Process for producing a DFB laser with a diffraction grating superlattice A semiconductor optical element having a layer which exhibits a function of diffraction grating between a first cladding layer and a second cladding layer, wherein the layer which exhibits the function of diffraction grating consists of a superlattice lay... | 06/27/1989 |
| 4771010 | Energy beam induced layer disordering (EBILD) A novel energy beam induced layer disordering (EBILD) process is used to (a) locally melt in a scanned pattern regions of a solid state semiconductor heterostructure to produce an alloy of intermediate composition having different optical properties and/o... | 09/13/1988 |
| 4731338 | Method for selective intermixing of layered structures composed of thin solid films A multilayer structure formed of two or more separate layers of different materials can be selectively intermixed so as to become compositionally transmuted, such that the distinction between the different original materials is lost, at least partially. T... | 03/15/1988 |
| 4716125 | Method of producing semiconductor laser A compound semiconductor laser comprises a semi-insulating substrate, a lower clad layer, an MQW active layer, an upper clad layer, and two electrodes on the top surface thereof. The upper clad layer is formed so as to have a property of reducing the diff... | 12/29/1987 |
| 4671830 | Method of controlling the modeling of the well energy band profile by interdiffusion The method of controlling the modeling of the well energy band profile by interdiffusion comprises at least one thin disordering component layer contiguous with a surface of the quantum well layer and including a high content of a disordering component th... | 06/09/1987 |
| 4654090 | Selective disordering of well structures by laser annealing A method of converting selected areas of a semiconductor structure into a disordered alloy comprising a well feature epitaxially deposited on a semiconductor support, the well feature comprising at least one first well layer of narrow bandgap material dep... | 03/31/1987 |
| 4639275 | Forming disordered layer by controlled diffusion in heterojunction III-V semiconductor A method is disclosed for converting a multilayer semiconductor structure, that includes active semiconductor regions interposed between semiconductor barrier layers, into a disordered alloy by introduction of a specified disordering element into the mult... | 01/27/1987 |
| 4511408 | Semiconductor device fabrication with disordering elements introduced into active region Silicon or krypton is used as a disordering element to selectively disorder layers in a heterojunction III-V semiconductor.... | 04/16/1985 |
| 4378255 | Method for producing integrated semiconductor light emitter A multilayer, III-V semiconductive structure can be disordered and shifted up in energy gap into a single crystalline form by a Zinc diffusion. More specifically, all or selected portions of a multilayer of either gallium arsenide/aluminum arsenide or gal... | 03/29/1983 |
