Famous Patents
The first commercial microwave oven was nearly 6 feet tall and weighed in at 750 pounds.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 6013538 | Method of fabricating and patterning OLEDs A multiple layer patterning system with an undercut allows the deposition of a material onto a substrate from a direction substantially perpendicular to the substrate, followed by the angular deposition of a protective cap. Because of the angular depositi... | 01/11/2000 |
| 5981307 | Fabrication process of optical semiconductor device having a diffraction grating A method of fabricating an optical semiconductor device includes the steps of irradiating a substrate by a first optical beam and a second optical beam such that the first and second optical beams form interference fringes on the substrate, exposing a res... | 11/09/1999 |
| 5953585 | Method for manufacturing an organic electroluminescent display device A method for manufacturing an organic electroluminescent display device including one or more organic electroluminescent elements arranged on a light-permeable substrate, each element having a cathode, an emitting layer made of one or more organic substan... | 09/14/1999 |
| 5953587 | Method for deposition and patterning of organic thin film A patterning system with a photoresist overhang allows material to be deposited onto a substrate in various positions by varying the angle from which the material is deposited, and by rotating the substrate. The patterning system can be used to fabricate ... | 09/14/1999 |
| 5953359 | Laser diode array and fabrication method thereof First to n-th single-axial-mode LDs are arranged on a semiconductor substrate, where nࣙ2. Each of the first to n-th LDs has a stripe-shaped semiconductor active layer formed on or over the substrate, a stripe-shaped semiconductor guiding layer formed on... | 09/14/1999 |
| 5920766 | Red and blue stacked laser diode array by wafer fusion A red laser structure has an inverted or p-side down orientation. The red laser structure is inverted and wafer fused to a blue laser structure to form a red/blue monolithic integrated laser structure. The top semiconductor layer of the inverted red laser... | 07/06/1999 |
| 5898722 | Dual wavelength monolithically integrated vertical cavity surface emitting lasers and method of fabrication Dual wavelength monolithically integrated VCSELs and a method of fabrication for emitting a short wavelength light and a long wavelength light including a first mirror stack lattice matched to the surface of a substrate. A short wavelength VCSEL is fabric... | 04/27/1999 |
| 5893721 | Method of manufacture of active matrix LED array A method of fabricating an active matrix LED array includes forming layers of material on a substrate, which layers cooperate to emit light when activated. Row and column dividers are formed in the layers to divide the layers into an array of LEDs arrange... | 04/13/1999 |
| 5795798 | Method of making full color monolithic gan based leds A method and apparatus for producing full-color luminescent monolithic semiconductor devices. Each portion of the device is bandgap engineered by using different dopants to change the direct bandgap of selected areas of each region, thereby allowing that ... | 08/18/1998 |
| 5789274 | Wavelength-tunable semiconductor laser and fabrication process thereof A wavelength tunable semiconductor laser includes an active region including an active layer generating an optical gain by injection of a current, a phase control region including a tuning layer generating variation of a refraction index by injection of t... | 08/04/1998 |
| 5776793 | Method of fabricating opto-electronic device A method of fabricating opto-electronic device includes steps of introducing a first reacting gas flow, a second reacting gas flow and (a) dopant(s) into a reactor to form epilayer(s) on a substrate wherein the ratio of the first reacting gas and the seco... | 07/07/1998 |
| 5766980 | Method of manufacturing a solid state imaging device The method of manufacturing a solid state imaging device of the invention comprises a step of adding carboxylate as a dyeing assistant auxiliary to the aqueous dyestuff solution when forming dyeing layers of acrylic-based resin on a semiconductor substrat... | 06/16/1998 |
| 5756373 | Method for fabricating optical semiconductor device In a fabricating method of an optical semiconductor device, a pair of SiO2 films are formed on an n-InP substrate so as to have a large width in a region I (laser region) and a small width in a region II (optical waveguide region) and have the ... | 05/26/1998 |
| 5707891 | Method of manufacturing a light emitting diode A method of manufacturing a light emitting diode, which includes the steps of bringing a semiconductor substrate of p-type or n-type into contact with a growth solution at a high temperature and thereafter, lowering the temperature so as to form a monocry... | 01/13/1998 |
| 5681756 | Method of fabricating an integrated multicolor organic led array A method of fabricating an integrated multicolor organic LED array including providing a negative layer and patterning a plurality of different color LED organic layers, one at a time, on the negative layer to form a plurality of different color LEDs in a... | 10/28/1997 |
| 5597740 | Semiconductor display device and a method of fabricating the same A light emitting device and a method of fabricating the same in which a first cladding layer is formed on a substrate, then red, green and blue light emitting portions each made of II-VI semiconductor are formed in a horizontal direction with respect to a... | 01/28/1997 |
| 5580818 | Fabrication process for semiconductor optical device A SiO2 mask is formed on an n-type InP substrate. The mask gap width is narrower in a region I (laser region) and wider in a region II (modulator region). With taking the mask as growth blocking masks, an optical guide layer of InGaAsP, an MQW ... | 12/03/1996 |
| 5527732 | Method for fabricating semiconductor laser and photo detecting arrays for wavelength division multiplexing optical interconnections The invention provides a method of fabricating two dimensional semiconductor surface emitting laser and photo detector arrays for wavelength division multiplexing optical interconnections. A first stacked multiple layer structure on a first semiconductor ... | 06/18/1996 |
| 5459082 | Method of making a semiconductor device A semiconductor device and a method of making the same capable of simplifying the process of making and reducing the cost of making. In the method a first layer is formed which has a plurality of conductors at its edge portion. Thereafter, a second layer ... | 10/17/1995 |
| 5324387 | Method of fabricating asymmetric closely-spaced multiple diode lasers The present invention is a method for fabricating a multiple beam semiconductor laser, wherein the laser includes first and second semiconductor laser dies respectively affixed to a pair of supporting heatsinks. The method utilizes a laminating process to... | 06/28/1994 |
| 5185290 | Method of coating facet of semiconductor optical element A method of selectively coating one of two spaced apart facets of respective light-emitting regions on the same surface of a semiconductor device formed in a semiconductor wafer includes forming at least one first groove in a wafer and forming at least on... | 02/09/1993 |
| 5124279 | Integrated semiconductor laser producing light of different wavelengths at respective active regions A method of making an integrated semiconductor laser on a common substrate including at least two active regions, each active region oscillating at a respective, different wavelength, including producing a precursor laser structure by successively growing... | 06/23/1992 |
| 5071786 | Method of making multiple wavelength p-n junction semiconductor laser with separated waveguides A multiple wavelength semiconductor laser with two active layers separated by either a p-cladding layer of a p-n junction cladding layers. A p-disordered region and a n-disordered region extend through one of the active layers and into the intermediate cl... | 12/10/1991 |
| 5039627 | Method of producing a quasi-flat semiconductor device capable of a multi-wavelength laser effect and the corresponding device A method of producing a quasi-flat semiconductor device capable of a multi-wavelength laser effect and the device thus produced. On the basis of a double heterostructure stack supported by a substrate comprising steps, following levelling of the stack and diff... | 08/13/1991 |
| 4925811 | Method of manufacturing a semiconductor structure suitable for producing a multi-wavelength laser effect A double heterostructure stack comprising confinement layers (CC) enclosing active layers (CA) is formed on a substrate (S), e.g. a N+ type gallium arsenide substrate. Selective etching is performed so as to lay bare the confinement layers at different de... | 05/15/1990 |
| 4888085 | Processes for their manufacture of monolithically integrated planar lasers differing in emission wavelengths Lasers differing in emission wavelengths are disclosed monolithically integrated in a common substrate providing positive index guiding of adjacent lasers. The lasers and the substrate together present a planar semiconductive surface. The monolithically i... | 12/19/1989 |
| 4879250 | Method of making a monolithic interleaved LED/PIN photodetector array Interleaved arrays of photoelectronic devices are fabricated utilizing one-step epitaxial growth of all active layers and simple planar processing. Exemplary arrays include interleaved LED transmitters and PIN photodiode receivers that operate at the same... | 11/07/1989 |
| 4637122 | Integrated quantum well lasers for wavelength division multiplexing An integrated quantum well laser structure which has a plurality of quantum well lasers for providing a plurality of light beams each having a different wavelength for use in wavelength division multiplexing.... | 01/20/1987 |
| 4547956 | Process for producing a semiconductor laser with several independent wavelengths and laser obtained by this process Process for producing a laser having several wavelengths, wherein: a first double heterostructure is produced by epitaxy with an active layer having a first composition, the first double heterostructure obtained is etched into the substrate, through a mask hav... | 10/22/1985 |
| 4425650 | Buried heterostructure laser diode A buried heterostructure laser diode and method for making the same wherein an active layer is provided in a semiconductor region forming a mesa stripe, and, except for the top surface portion of the mesa stripe, the side surface portion of the mesa strip... | 01/10/1984 |
| 4211586 | Method of fabricating multicolor light emitting diode array utilizing stepped graded epitaxial layers Multicolor light emitting diode arrays can be made using a binary semiconductor substrate on which is grown a graded epitaxial region of an AB1-x Cx semiconductor. Diodes emitting various light colors can selectively be formed in dif... | 07/08/1980 |
| 4199385 | Method of making an optically isolated monolithic light emitting diode array utilizing epitaxial deposition of graded layers and selective diffusion Monolithic light emitting diode arrays may be fabricated by using a two layer binary semiconductor substrate wafer providing a gradient of ingredient concentration in one portion of the wafer and forming p-n junctions to a desired depth in the graded conc... | 04/22/1980 |
| 4198251 | Method of making polychromatic monolithic electroluminescent assembly utilizing epitaxial deposition of graded layers A monolithic assembly comprising electroluminescent diodes emitting radiations of different wavelengths. The junctions of the said diodes are established in different sectors of a layer of a semiconductor compound where the concentration of a given impuri... | 04/15/1980 |
| 4167016 | Optically isolated monolithic light emitting diode array Monolithic light emitting diode arrays may be fabricated by using a two layer binary semiconductor substrate wafer providing a gradient of ingredient concentration in one portion of the wafer and forming p-n junctions to a desired depth in the graded conc... | 09/04/1979 |
| 4148045 | Multicolor light emitting diode array Multicolor light emitting diode arrays can be made using a binary semiconductor substrate on which is grown a graded epitaxial region of an AB1-x Cx semiconductor. Diodes emitting various light colors can selectively be formed in dif... | 04/03/1979 |
| 4012243 | Method of fabricating multicolor light displays utilizing etch and refill techniques There is disclosed a method of manufacturing a multicolor monolithic light display utilizing the etching of multiple channels in a substrate and selectively refilling said channels with single crystal material, each channel being filled with material capa... | 03/15/1977 |
