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| Number | Title | Issue Date |
| 5104824 | Selective area regrowth for surface-emitting lasers and other sharp features A method of etching and regrowing III-V compounds in a sharply defined vertical feature. Molecular beam epitaxy is used to grow a laterally undefined vertical-cavity, surface-emitting diode laser structure from semiconducting III-V materials. The structur... | 04/14/1992 |
| 5100220 | Semiconductor laser diode arrangement and method of making same A semiconductor device, formed on a wafer, comprises an array of laser diodes, each emitting a beam parallel to the wafer surface and, integrated with the array, individually tilted deflecting mirrors forming an array of virtual sources. The virtual sourc... | 03/31/1992 |
| 5094970 | Method of making a light emitting diode array In a light emitting diode array, an N-electrode layer (32) is extended from the bottom surface to the top surface of a semiconductor body (30) through the side surface. PN junctions (42) are exposed to the cleavage surface (S) and light is emitted therefr... | 03/10/1992 |
| 5086004 | Isolation of layered P-N junctions by diffusion to semi-insulating substrate and implantation of top layer An isolation structure and method of fabrication thereof for use in isolation of p-n junctions and for use in multiplexed, multi-color LED arrays. The isolation structure is fabricated on a structure which has a p-n junction formed on a semi-insulating su... | 02/04/1992 |
| 5084742 | Light emitting diode and its array and method of making the same A light emitting diode and its array having improved light emitting efficiency are disclosed. A first layer of a semiconductor material of a first conductivity type and a second layer of a semiconductor material of a second conductivity type are formed on... | 01/28/1992 |
| 5061656 | Method for making a self-aligned impurity induced disordered structure A method for making a self-aligned IID structure for an LED (10) is provided. This self-aligned IID structure is accomplished by depositing a dopant layer (17) over the LED structure. A polymeric material is deposited over layer (17). The polymeric layer ... | 10/29/1991 |
| 5047364 | Method for making a multi-point emission type semiconductor laser device A multi-point light emission type semiconductor laser device including a plurality of light emission points which are produced on a p type or n type semiconductor layer monolithically and are capable of being driven independently includes electrically ins... | 09/10/1991 |
| 5034344 | Method of making a surface emitting semiconductor laser A method of making a vertical-cavity surface emitting laser and method of making in which a III-V heterostructure is epitaxially grown to include a quantum well active region between two interference mirrors separated by an emitting wavelength of the quan... | 07/23/1991 |
| 5028563 | Method for making low tuning rate single mode PbTe/PbEuSeTe buried heterostructure tunable diode lasers and arrays A PbTe/PbEuSeTe buried heterostructure tunable diode laser and array and the method for making the same. The active region layer is buried between two lead salt semiconductor layers containing europium and selenium that are mutually of opposite conductivi... | 07/02/1991 |
| 5012478 | Monolithic multiple beam semiconductor laser A monolithic multiple beam semiconductor laser having a low power and a high power beam. A number of factors in the laser are coordinated in order to assure that both the low and high power beams operate at precisely the same frequency. The front and rear... | 04/30/1991 |
| 5011783 | Forming selective single crystal regions in insulated pockets formed on silicon by energy beams and devices formed in the pockets A method for producing a semiconductor device including the steps of forming an insulating layer on a substrate, the insulating layer having a plurality of concave portions, forming a non-single crystalline silicon layer on the surface of the insulating l... | 04/30/1991 |
| 5004625 | Solid state light modulator incorporating metallized gel and method of metallization A solid state light modulator structure useful in a video display system includes a deformable silica containing gel layer on an array of charge storage elements, and an adherent, highly light reflective metal (e.g., Ag) electrode layer formed on the surf... | 04/02/1991 |
| 4999310 | Method of making an LED array A method of making an LED array capable of enhancing an internally generated light density with heterojunction by supporting the LED array with a current injection region by growing heterogeneous film and diffusing a zinc impurity. The improved LED array ... | 03/12/1991 |
| 4990971 | Light emiting diode network A light emitting diode network includes a plurality of light emitting diodes arranged in a row. Each of the plurality of light emitting diodes includes a semiconductor crystal having first and second regions of opposed conductivity types respectively faci... | 02/05/1991 |
| 4990465 | Method of forming a surface emitting laser A method and apparatus for forming a monolithic surface emitting laser diode array by providing vertical partly light transmissive mirror surfaces opposite parabolic light reflective mirror surfaces formed adjacent the active buried layer of a heterostruc... | 02/05/1991 |
| 4987094 | Method of making a macroscopic stepped structure on a vicinally cut crystal A semiconductor structure having a face with macroscopic parallel steps and its method of making. The structure is formed by cutting a face on a crystal at a vicinal angle, that is, being misoriented from a major crystal face by a few degrees. Atomic size... | 01/22/1991 |
| 4933601 | Light emitting diode array chip and method of fabricating same An LED array chip comprising; a first semiconductor layer having p-type conduction; a second semiconductor layer having a n-type conduction, possessing forbidden band width smaller than the first layer and provided on the first layer, so as to form a semi... | 06/12/1990 |
| 4933301 | Method of forming a semiconductor laser A method of making semiconductor laser arrays having an impurity disordered pattern of waveguides at least some of which are directly joined at branching junctions. The region near the branching junctions provides a phase boundary condition in which light... | 06/12/1990 |
| 4927778 | Method of improving yield of LED arrays A high yield method for the fabrication of multi-element, gallium-arsenide-phosphide light emitting diode arrays having square light emitting elements 7903 square microns on 88.9 micron center suitable for use in electronic/optical printers, is described.... | 05/22/1990 |
| 4922500 | Cross-coupled quantum-well stripe laser array A cross-coupled stripe laser array in which a substrate is formed with parallel grooves extending part way across the substrate and an area adjacent interior ends of the grooves is left planar. The orientations of the substrate and the grooves are chosen ... | 05/01/1990 |
| 4883770 | Selective NIPI doping super lattice contacts and other semiconductor device structures formed by shadow masking fabrication A molecular beam epitaxy (MBE) process in which some portions of the substrate are shadowed by a shadow mask from receiving at least one of the molecular beams used in the MBE process. This process is capable of producing NIPI superlattices that have sele... | 11/28/1989 |
| 4784722 | Method forming surface emitting diode laser A method and apparatus for forming a monolithic surface emitting laser diode array by providing vertical partly light transmissive mirror surfaces opposite parabolic light reflective mirror surfaces formed adjacent the active buried layer of a heterostruc... | 11/15/1988 |
| 4775645 | Method of producing a flat LED panel display A flat LED panel display with LED elements arranged in a high density and a method of producing such a display are disclosed. A conductive layer is deposited on a ceramic substrate and bonded to one surface of an LED wafer by a conductive paste. A plurali... | 10/04/1988 |
| 4734380 | Multicavity optical device held together by metallic film Semiconductor lasers having cleaved optically coupled cavities operating electrically isolated produce output of a single longitudinal mode. Wavelength tuning of the single longitudinal mode is possible.... | 03/29/1988 |
| 4724356 | Infrared display device A matrix of infrared generating cells is disclosed. Each cell includes a resistive element formed over and traversing a cavity formed on the surface of the supporting semiconductor substrate.... | 02/09/1988 |
| 4716130 | MOCVD of semi-insulating indium phosphide based compositions It has been found that through the use of ferrocene or iron pentacarbonyl based compounds, it is possible to produce semi-insulating epitaxial layers of indium phosphide-based compounds by an MOCVD process. Resistivities up to 1×109 ohm-cm hav... | 12/29/1987 |
| 4690714 | Method of making active solid state devices A method of making an integrated electrooptic solid state device array comprising forming a structure having a multiplicity of active, solid state electrooptic component bodies in a solid state device material, including arranging the component bodies in ... | 09/01/1987 |
| 4660275 | Method of making cleaved-coupled-cavity (C3) diode lasers A method of making an optically coupled semiconductor laser having cleaved facing end walls and precise alignment and spacing. An indium coated face of a semiconductor laser diode bar is placed on an indium coated support. A knife edge cleaves the bar int... | 04/28/1987 |
| 4639999 | High resolution, high efficiency I.R. LED printing array fabrication method An IR LED array and method of fabrication having a GaAs wafer with one surface metallized to form a common LED contact. Epitaxially formed on this wafer is a GaAs/GaAlAs heterostructure with successive layers of Ga1-x Alx As-n, GaAs-... | 02/03/1987 |
| 4547396 | Method of making a laser array A phase-locked laser array including a plurality of closely spaced channels in the surface of the substrate with lands therebetween with the laser oscillation occurring in a cavity region over each of the channels. A broad-area electrical contact provides... | 10/15/1985 |
| 4409724 | Method of fabricating display with semiconductor circuits on monolithic structure and flat panel display produced thereby Method of fabricating a display with silicon integrated circuits included on the same monolithic structure and the flat panel display produced thereby. The display which may be of the liquid crystal or electrochromic type, for example, is formed as an x-y... | 10/18/1983 |
| 4378255 | Method for producing integrated semiconductor light emitter A multilayer, III-V semiconductive structure can be disordered and shifted up in energy gap into a single crystalline form by a Zinc diffusion. More specifically, all or selected portions of a multilayer of either gallium arsenide/aluminum arsenide or gal... | 03/29/1983 |
| 4371406 | Solid-state device The ultra-miniaturized, active solid-state devices and circuitries have unique material bodies having signal-translating regions attached thereto for active signal translation. These regions, comprising melt-grown, or simulated melt-grown, metallurgical c... | 02/01/1983 |
| 4371968 | Monolithic injection laser arrays formed by crystal regrowth techniques A monolithic laser optical cavity structure and method of forming by use of planar photolithographic and crystal regrowth techniques. An original growth multilayer double heterostructure laser structure is grown by LPE on a N+-GaAs substrate. V-grooves ar... | 02/01/1983 |
| 4342148 | Contemporaneous fabrication of double heterostructure light emitting diodes and laser diodes using liquid phase epitaxy In the manufacture of double heterostructure laser diodes using liquid phase epitaxy a source crystal precedes the laser substrate crystal through the process to ensure saturation of the various melts from which epitaxial growth is obtained. The source cr... | 08/03/1982 |
| 4280273 | Manufacture of monolithic LED arrays for electroluminescent display devices In the manufacture of a monolithic LED array, in particular a matrix array, in which portions of the array are electrically isolated from one another by channels cut or etched through the slice of n-type material, the channels are filled with a glass frit... | 07/28/1981 |
| 4236296 | Etch method of cleaving semiconductor diode laser wafers Double heterostructure (Al,Ga)As wafer comprising layers of gallium arsenide and aluminum gallium arsenide on a metallized n-GaAs substrate are separated into individual devices for use as diode lasers. In contrast to prior art techniques of mechanically ... | 12/02/1980 |
| 4136435 | Method for making solid-state device The ultra-miniaturized, active solid-state devices and circuitries have unique material bodies having signal-translating regions attached thereto for active signal translation. These regions, comprising melt-grown, or simulated melt-grown, metallurgical c... | 01/30/1979 |
| 4095331 | Fabrication of an epitaxial layer diode in aluminum nitride on sapphire An ultraviolet light emitting diode array of aluminum nitride grown on a sapphire substrate is fabricated by sputtering a preliminary layer of aluminum nitride onto a sapphire substrate, then placing said coated substrate in contact with a source of alumi... | 06/20/1978 |
| 4069463 | Injection laser array An array of closely spaced injection lasers is mounted upon a common substrate of grooved semiconductor or insulating material, with the active (hot) layers of the lasers as close as possible to the substrate. Individual grooves of relatively large cross-... | 01/17/1978 |
