Did You Know...
...that the video game, Pong, was invented by a guy who graduated at the bottom of his engineering class? Nolan Bushnell spent more time running the games at a local amusement park than he did on his studies at the University of Utah. His dreams of working for Disney's amusement empire were dashed when the company wouldn't hire him. Taking a boring job, Nolan daydreamed about electronic versions of popular games. He invented Pong, the first video game, and went on to found Atari Co.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 4055443 | Method for producing semiconductor matrix of light-emitting elements utilizing ion implantation and diffusion heating Disclosure is made of a method for producing a semiconductor array of light-emitting elements, whereby a mask is first applied onto an n-layer of an epitaxial structure consisting of a substrate GaAs of the p+ -type of conductivity with layers ... | 10/25/1977 |
| 4032373 | Method of manufacturing dielectrically isolated semiconductive device A matrix array of semiconductor diodes formed in an epitaxial layer of a semiconductor wafer and being dielectrically isolated from each other by two orthogonal sets of parallel insulating oxide regions, one set extending completely through the epitaxial ... | 06/28/1977 |
| 3996492 | Two-dimensional integrated injection laser array An injection laser, whose sides are chemically etched to produce facing 45° mirrors, can be made to emit lasing light in the same direction as current going through the p-n junction. A two dimensional array of lasers is produced wherein the location of e... | 12/07/1976 |
| 3985590 | Process for forming heteroepitaxial structure A process for producing light emitting diodes is disclosed. In the process a major planar surface of a single crystal silicon wafer is modified to acceptably match the crystallographic lattice constant of a preselected electroluminescent single crystal se... | 10/12/1976 |
| 3984857 | Heteroepitaxial displays A process for producing light emitting diodes is disclosed. In the process a major planar surface of a single crystal silicon wafer is modified to acceptably match the crystallographic lattice constant of a preselected electroluminescent single crystal se... | 10/05/1976 |
| 3968564 | Alignment of optical fibers to light emitting diodes Accurate alignment between an optical fiber and a light emitting diode -- having a double heterostructure -- is obtained by building the multilayer heterostructure on a substrate surface on which has previously been formed a mesa. After formation of the s... | 07/13/1976 |
| 3954534 | Method of forming light emitting diode array with dome geometry A structure for providing arrays or individual hemispherical diodes and methods of producing the diodes. When the diode array is to be part of a configuration utilizing a substrate, the substrate is selected to have radiation transparency, a lower refract... | 05/04/1976 |
| 3940846 | Scannable light emitting diode array and method There is disclosed a monolithic light display comprising a matrix of light emitting diodes in an integral structure which is scannable to produce an alpha numeric character display. Each of the light emitting diodes is electrically isolated from each othe... | 03/02/1976 |
| 3940784 | Semiconductor device A semiconductor device having a monocrystalline semiconductor layer provided on a surface comprising at least one region obtained by diffusion of a doping impurity whose width from the surface of the semiconductor layer in the direction of the substrate f... | 02/24/1976 |
| 3932927 | Scannable light emitting diode array and method There is disclosed a method of manufacturing the foregoing which comprises placing an epitaxial layer of a first conductivity type semiconductor material upon a substrate of semiconductor material having an intrinsic or semi insulating conductivity. Then ... | 01/20/1976 |
| 3930912 | Method of manufacturing light emitting diodes The invention relates to the manufacture of arrays of light emitting diodes (L.E.D.'s) from a wafer consisting of an n-type epitaxial layer on an n.sup.+ substrate. The method includes the steps of forming p-type islands by diffusing a p-type dopant into ... | 01/06/1976 |
