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| Number | Title | Issue Date |
| 6281031 | Method of severing a semiconductor wafer A semiconductor wafer, after having been provided with a multiplicity of optoelectronic semiconductor structures, is severed into a number of individual chips by abrasive cutting. After cutting, the chip flanks are etched with the chip surface protected. ... | 08/28/2001 |
| 6278173 | Semiconductor device, its manufacturing method and substrate for manufacturing a semiconductor device It is intended to provide a semiconductor device, its manufacturing method and substrate for manufacturing the semiconductor device which ensures that good cleavable surfaces be made stably in a semiconductor layer under precise control upon making edges ... | 08/21/2001 |
| 6261858 | Wavelength-variable semiconductor laser, optical integrated device utilizing the same, and production method thereof A wavelength-variable semiconductor laser includes: a submount; and a semiconductor laser chip being mounted onto the submount and having at least an active layer region and a distributed Bragg reflection region, wherein the semiconductor laser chip is mo... | 07/17/2001 |
| 6225191 | Process for the manufacture of optical integrated circuits The specification describes wafer fabrication cleaning processes for silicon optical bench technology. The cleaning processes are designed to remove debris in situ after dicing silicon wafers mounted on a tape carrier. They were also developed specificall... | 05/01/2001 |
| 6221740 | Substrate cleaving tool and method A cleaving tool provides pressurized gas to the edge of a substrate to cleave the substrate at a selected interface. A substrate, such as a bonded substrate, is loaded into the cleaving tool, and two halves of the tool are brought together to apply a sele... | 04/24/2001 |
| 6215194 | Wafer sheet with adhesive on both sides and attached semiconductor wafer Providing a method for die bonding semiconductor elements surely without causing damage thereto in a shorter time with less steps of operations, thereby improving the productivity. A semiconductor wafer 1 of which back side is laminated onto a wafer sheet ... | 04/10/2001 |
| 6197609 | Method for manufacturing semiconductor light emitting device Semiconductor layers forming a light emitting layer and including an n-type layer and p-type layer are formed onto a substrate, then the n-type layer is exposed by removing a part of the laminated semiconductor layers. p-side electrode and n-side electrod... | 03/06/2001 |
| 6197603 | Semiconductor device and manufacturing method thereof including a probe test step and a burn-in test step Dispersion of a load may be kept within a predetermined allowance even when a plurality of probes in a large area are pressed in batch by pressing the probes provided in a membrane against a wafer by applying a pressure load to a plurality of places on a ... | 03/06/2001 |
| 6165815 | Method of fabrication of stacked semiconductor devices A method for increasing integrated circuit density comprising stacking an upper wafer and a lower wafer, each of which have fabricated circuitry in specific areas on their respective face surfaces. The upper wafer is attached back-to-back with the lower w... | 12/26/2000 |
| 6159771 | Method of manufacturing diodes A method of manufacturing diodes includes steps of cutting grooves on a ceramic base to form a plurality of units, each of the grooves being formed with a vertical surface and an inclined surface, applying a layer of conductive cream all over top of each ... | 12/12/2000 |
| 6159760 | Method of fabricating oxide-aperture vertical cavity surface emitting lasers A method of fabricating oxide-apertured vertical cavity surface emitting lasers involving the steps of: i) defining, during the fabrication of one or more VCSELs on an electronic chip, a number of mesa structures of different sizes; ii) selectively oxidiz... | 12/12/2000 |
| 6156584 | Method of manufacturing a semiconductor light emitting device Deposited on a wafer-like substrate for forming a plurality of light emitting device chips is a semiconductor layer laminate with a different property from that of the substrate. Then, electrodes are provided on and in electric connection with a top semic... | 12/05/2000 |
| 6150193 | RF shielded device A shielded package for an IC chip having bond pads thereon includes an insulating substrate having metallizations formed on a surface of the substrate. The IC chip is mounted to the substrate surface and the IC chip bonding pads are electrically coupled t... | 11/21/2000 |
| 6117707 | Methods of producing integrated circuit devices A method for producing integrated circuit devices including the steps of producing a plurality of integrated circuits on a wafer, each of the integrated circuits including a multiplicity of pads and thereafter slicing the wafer, thereby to define a plural... | 09/12/2000 |
| 6107162 | Method for manufacture of cleaved light emitting semiconductor device A semiconductor device such as a semiconductor layer is formed of a compound semiconductor layer of III-V group such as GaN. In the case where the substrate has not any planes that are easy to cleave which coincides with an easy-to-cleave plane of a semic... | 08/22/2000 |
| 6100104 | Method for fabricating a plurality of semiconductor bodies A plurality of semiconductor bodies are produced by first depositing a mask layer on a main surface of a substrate wafer. A plurality of windows are next formed in the mask layer such that the wafer surface is laid bare in the windows. A semiconductor lay... | 08/08/2000 |
| 6087677 | High density self-aligned antifuse The present invention is an antifuse structure comprising an insulation layer between a top conductor and a bottom conductor. The insulation layer has a via. A resistive layer is adjacent the via and a plug is adjacent the resistive layer. The plug is in ... | 07/11/2000 |
| 6083769 | Method for producing a light-emitting diode A method for producing a light-emitting diode includes the steps of: forming a single-layered or multi-layered Alx Gay In1-x-y P (0ࣘxࣘ1, 0ࣘyࣘ1) light-emitting layer, an Alx Gay In1-x-y | 07/04/2000 |
| 6080599 | Semiconductor optoelectric device and method of manufacturing the same The present invention is intended to provide a semiconductor optoelectric device with high luminescent efficiency and a method of manufacturing the same. The semiconductor optoelectric device 18 according to the present invention is constructed by deposit... | 06/27/2000 |
| 6080598 | Method of producing semiconductor laser element with mirror degradation suppressed In a method of producing a semiconductor laser element with suppression of mirror degradation by the laser light which can operate stably with a high output power, a laser wafer is prepared to have a layered structure of semiconductor layers including an ... | 06/27/2000 |
| 6080602 | Method of producing a semiconductor device using a reduced mounting area An object of the present invention is to provide a method of manufacturing a semiconductor device which enables a decrease in mounting area on a printed circuit board and an increase in space efficiency on the printed circuit board. The method of manufact... | 06/27/2000 |
| 6077720 | Method for fabricating semiconductor laser facets using combined cleave and polish technique A method for fabricating opto-electronic devices having a surface that includes a first mirror facet in a first semiconductor layer deposited on a wafer. The mirror facet is located in a first facet plane. In the method of the present invention, the wafer... | 06/20/2000 |
| 6048747 | Laser bar cleaving apparatus A cleaving apparatus for separating a wafer (or bar) bar of optical devices into separate bars (or individual optical devices) comprises a relatively thin wire, preferably tungsten. The wire is forced against the underside of the bar directly underneath t... | 04/11/2000 |
| 6033927 | Method for separating a substrate of a group III nitride semiconductor light-emitting device A wafer is diced up to a depth of 15 μm from the surface of a sapphire substrate along a dicing line set in the center of a processed region between electrodes for respective devices by using a blade having a width narrower than the width of the processe... | 03/07/2000 |
| 6025251 | Method for producing a plurality of semiconductor components A semiconductor component includes a semiconductor body having a front side, a rear side and at least one curved side surface. As viewed from outside the semiconductor body, the at least one curved side surface is convex adjacent the rear side and concave... | 02/15/2000 |
| 6016358 | Method and apparatus for aligning the position of die on a wafer table A method for determining the position of a die on a wafer table after a wafer (20) has been cut includes stepping the wafer table (22) a series of one die lengths diagonally and after each step compare the die pattern to a reference die to determine stree... | 01/18/2000 |
| 6013540 | Laser diode with substrate-side protection A semiconductor optical device is formed to include a substrate-side dielectric barrier layer in the area where the substrate and facet meet. The dielectric is deposited on the substrate surface prior to cleaving of the facet and results in reducing the d... | 01/11/2000 |
| 6001664 | Method for making closely-spaced VCSEL and photodetector on a substrate A monolthically integrated VCSEL and photodetector, and a method of manufacturing same, are disclosed for applications where the VCSEL and photodetector require separate operation such as duplex serial data communications applications. A first embodiment ... | 12/14/1999 |
| 5985687 | Method for making cleaved facets for lasers fabricated with gallium nitride and other noncubic materials Optically flat cleaved facet mirrors are fabricated in GaN epitaxial films grown on sapphire by wafer fusing a GaN film with a sapphire substrate to a cubic substrate such as an InP or GaAs substrate. The sapphire substrate may then partially or entirely ... | 11/16/1999 |
| 5982798 | Semiconductor laser and process for production thereof In a semiconductor laser for analog modulation, intermodulation distortion at high temperatures and/or at high outputs is reduced. In a DC-PBH semiconductor laser, the width (Wm) of the electrode mesa 11 is set at 10 μm or less, and the width of each rec... | 11/09/1999 |
| 5976904 | Method of manufacturing semiconductor device A method of manufacturing a semiconductor device for forming with high accuracy a marker used for separating a semiconductor device 10, wherein a plurality of semiconductor devices 10 are fabricated in a semiconductor substrate 16 are separated, and where... | 11/02/1999 |
| 5972729 | Method of manufacturing light-receiving/emitting diode array chip A method of manufacturing a light-emitting or a light-receiving diode array chip. A first interlayer dielectric is formed in each of a plurality of chip areas on a substrate of a first conductivity type. Impurity diffusion regions of a second conductivity... | 10/26/1999 |
| 5963785 | Dielectrically-isolated integrated circuit In a semiconductor integrated circuit consisting of a plurality of semiconductor chips each having a plurality of islands, two or more bonding wires each having different potential are connected to bonding pads formed on the surface of semiconductor chips... | 10/05/1999 |
| 5943591 | Integrated circuit scribe line structures and methods for making same A method for forming a scribe line on a semiconductor wafer including the steps of: (a) providing a semiconductor substrate; and (b) sequentially providing a plurality of layers over the semiconductor substrate of alternating conductive and insulating typ... | 08/24/1999 |
| 5920584 | High-power diode laser and method for mounting the same A high-power diode laser and a method for mounting same are described. Predetermined breaking locations in the laser bar are provided which, during cooling after the laser bar has been soldered to a heat sink having a smaller thermal expansion coefficient... | 07/06/1999 |
| 5915163 | Method of manufacturing a semiconductor diode laser Method of manufacturing a laser which is provided with a metal layer and a solder layer as early as in the wafer stage, and which is particularly suitable for so-called epi-down final mounting. An individual laser is obtained in that first a block compris... | 06/22/1999 |
| 5888882 | Process for separating electronic devices A process for separating electronic devices connected with one another in a body, the process including thinning the side of the body remote from the electronic devices, separating the electronic devices, and testing electrical parameters of the electroni... | 03/30/1999 |
| 5888841 | Method of making an electro-optical device with integral lens Electro-optical device characterized by having been formed into an individual unit with an integral lens, and method to form the device. A lens, for instance a length of cylindrical microlens, is aligned with a diode strip having a plurality of diodes, fo... | 03/30/1999 |
| 5872386 | Wafer layout of semiconductor device A wafer layout for a multi-channel device for improving the yield of operative devices comprises a semiconductor wafer and a plurality of semiconductor devices formed in the semiconductor wafer, each device comprising a consecutive series of impurity regi... | 02/16/1999 |
| 5852624 | Semiconductor laser element, method of manufacturing semiconductor laser element, and laser diode module In the semiconductor laser element of the present invention, a striped active layer for injecting an electrical current, is formed on the main surface of the semiconductor substrate. A pair of notches for dividing the semiconductor substrate, are made in ... | 12/22/1998 |
