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| Number | Title | Issue Date |
| 5171707 | Method of fabricating semiconductor laser device using the light generated by the laser to disorder its active layer at the end surfaces thereby forming window regions A method of fabricating a semiconductor laser device includes disposing a lower cladding layer, a superlattice active layer, an upper cladding layer, and a contact layer in the named order on a substrate, forming resonator end surfaces, disposing, on the ... | 12/15/1992 |
| 5171706 | Method for the production of a semiconductor laser device There is provided a method for the production of a semiconductor laser device which emits laser light from a facet. The method includes the steps of: growing a multi-layered structure containing an active layer for laser oscillation on a semiconductor sub... | 12/15/1992 |
| 5154333 | Jaw cleaving device An apparatus and method for cleaving GaAs laser bars from a cell utilizes a first jaw applied to one end of a laser bar to propagate a cleavage and a second jaw applied to an opposite end which provides a biasing force that assures separation of the bar f... | 10/13/1992 |
| 5094970 | Method of making a light emitting diode array In a light emitting diode array, an N-electrode layer (32) is extended from the bottom surface to the top surface of a semiconductor body (30) through the side surface. PN junctions (42) are exposed to the cleavage surface (S) and light is emitted therefr... | 03/10/1992 |
| 5063173 | Method for mirror passivation of semiconductor laser diodes A method for passivating mirrors in the process of fabricating semiconductor laser diodes is disclosed. Key steps of the method are: (1) providing a contamination-free mirror facet, followed by (2) an in-situ application of a continuous, insulating (or lo... | 11/05/1991 |
| 5053836 | Cleaving of diode arrays with scribing channels A relatively wide scribing channel is provided between the ends of each adjacent pair of diode array areas on a wafer to expose the epitaxial layer of the wafer. A scribing groove is then scribed in the scribing channel to define a cleavage line along whi... | 10/01/1991 |
| 5045500 | Method of making a semiconductor laser A semiconductor laser includes a first cladding layer having a forward mesa with at least one end at least partially spaced from the adjacent facet of the laser. A current blocking layer buries the mesa at its sides and at least partially at the ends of t... | 09/03/1991 |
| 5043044 | Monocrystalline silicon wafer A silicon wafer in which a plurality of semiconductor devices are to be formed is disclosed. The silicon wafer has a convex front surface before a process step for forming the semiconductor devices is conducted. The shape of the convex is designed such th... | 08/27/1991 |
| 4997792 | Method for separation of diode array chips during fabrication thereof Rather than being separated along a single cleavage line between their adjacent ends, diode arrays are spaced apart on a fabrication wafer to allow parallel cleavage lines to be established between the ends of each adjacent pair of arrays by scribed groov... | 03/05/1991 |
| 4997793 | Method of improving cleaving of diode arrays A relatively wide scribing channel is provided between the ends of each adjacent pair of diode array areas on a wafer to expose the epitaxial layer of the wafer. A scribing groove is then scribed in the scribing channel to define a cleavage line along whi... | 03/05/1991 |
| 4966862 | Method of production of light emitting diodes The invention is a method for preparing a plurality of light emitting diodes on a single substrate of a semiconductor material. The method is used for structures where the substrate includes an epitaxial layer of the same semiconductor material that in tu... | 10/30/1990 |
| 4965223 | Method of manufacturing a partially opaque substrate red led In a light emitting diode comprising a plurality of layers deposited on a substrate, the substrate is etched so as to reduce the area in which the substrate is attached to the plurality of layers. The reduction in the area of attachment results in less li... | 10/23/1990 |
| 4940672 | Method of making monolithic integrated III-V type laser devices and silicon devices on silicon A monolithic integrated structure in which a compound semiconductor (III-V or II-VI material) optoelectronic device (laser) is formed in the shape of a mesa-like structure projecting from an etch pit in an Si substrate. A method for sonically removing can... | 07/10/1990 |
| 4929300 | Process for the separation of monolithic LED chip arrangements generated on a semiconductor substrate wafer LED chip arrangements fabricated monolithically on a semiconductor substrate wafer are to be separated from one another by scribing in such a way that they can be properly arrayed to obtain a tight image-dot grid over several LED chip arrangements. The me... | 05/29/1990 |
| 4927778 | Method of improving yield of LED arrays A high yield method for the fabrication of multi-element, gallium-arsenide-phosphide light emitting diode arrays having square light emitting elements 7903 square microns on 88.9 micron center suitable for use in electronic/optical printers, is described.... | 05/22/1990 |
| 4925811 | Method of manufacturing a semiconductor structure suitable for producing a multi-wavelength laser effect A double heterostructure stack comprising confinement layers (CC) enclosing active layers (CA) is formed on a substrate (S), e.g. a N+ type gallium arsenide substrate. Selective etching is performed so as to lay bare the confinement layers at different de... | 05/15/1990 |
| 4914053 | Heteroepitaxial selective-area growth through insulator windows Preferred embodiments include growth of GaAs on insulator-masked silicon; the GaAs is single crystal over the silicon but polycrystalline over the insulator. A post=growth anneal extends the single crystal region over the insulator for distances of 2-4 μ... | 04/03/1990 |
| 4910166 | Method for partially coating laser diode facets Bars of integral laser diode devices cleaved from a wafer are placed with their p regions abutting and n regions abutting. A thin BeCu mask having alternate openings and strips of the same width as the end facets is used to mask the n region interfaces so... | 03/20/1990 |
| 4904617 | Method for separating monolithically produced laser diodes A method for separating laser diodes. The diodes are monolithically produced from a semiconductor substrate wafer which through an epitaxy process has been provided with a layer sequence suitable for laser operation. First, the semiconductor substrate waf... | 02/27/1990 |
| 4900283 | Method for arranging chips each having an array of semiconductor light emitting elements A multiple chip LED linear array including 2048 elements is achieved by a unique wafer dicing technique which allows LEDs in abutting chips to be separated by the same distance as adjacent elements on a single chip. The linear array is employed in photoco... | 02/13/1990 |
| 4895615 | Monolithic fabrication techniques for front face optoelectronic couplers and/or optical components including ridge structured waveguides The invention involves a method for the monolithic fabrication of front face optoelectronic couplers and/or optical components (10) including a ridge structured waveguide (4) in which the light-coupling edges (2) of the component (10) using a mask in the ... | 01/23/1990 |
| 4890383 | Method for producing displays and modular components Processing techniques for various modular components provide various surface mount structures for single device components (10) and multiple device components (FIGS. 6 and 7) suitable as character displays. The technique beings with a slab of substrate ma... | 01/02/1990 |
| 4883771 | Method of making and separating semiconductor lasers A method of producing a semiconductor laser which comprises sequentially depositing a lower cladding layer, an active layer, and an upper cladding layer on a substrate, forming a V shaped groove in the deposited layers at least reaching the lower cladding... | 11/28/1989 |
| 4865684 | Process for producing a semiconductor laser mirror by ionic machining A semiconductor (10) is subject to ionic etching (14) through a mask, whereof one side determines the location of the mirror. This mask is constituted by a crystalline layer (12), whereof the side (16) is a crystallographic plane.... | 09/12/1989 |
| 4788161 | Method of producing an end surface light emission type semiconductor device A method of producing an end surface light emmision type semiconductor device comprising: a process of producing a lower cladding layer, an active layer, and an upper cladding layer on a semiconductor substrate; a process of forming a stripe groove of a p... | 11/29/1988 |
| 4769342 | Method for making a semiconductor laser by cleaving a cantilever heterostructure A semiconductor laser device comprises a substrate (7) formed of p type GaAs, a laser diode portion (10) capable of laser oscillation and a monitor photodiode portion (11) capable of photoelectric conversion formed on substrate (7). The laser diode portio... | 09/06/1988 |
| 4758532 | Method for making a heterostructure semiconductor laser device by pressure cleaving of a cantilever structure A semiconductor laser device comprises a substrate (7) formed of p type GaAs, a laser diode portion (10) capable of laser oscillation and a monitor photodiode portion (11) capable of photoelectric conversion formed on substrate (7). The laser diode portio... | 07/19/1988 |
| 4755474 | Method of assembling an optocoupler A method of manufacturing optocoupler devices is provided wherein individual light emitting chips are mounted to a plurality of photodetector chips still in wafer form such that testing of the emitter detector pairs may be accomplished prior to dicing of ... | 07/05/1988 |
| 4734380 | Multicavity optical device held together by metallic film Semiconductor lasers having cleaved optically coupled cavities operating electrically isolated produce output of a single longitudinal mode. Wavelength tuning of the single longitudinal mode is possible.... | 03/29/1988 |
| 4731344 | Method of making a single heterostructure laser chip having sawn cavities and secondary saw cuts A sawn cavity single heterostructure laser chip is provided with secondary saw cuts to produce an inverted Tee shaped cross-section in order to limit the width of emission to less than the full width of the chip. The depth of the secondary cuts is arrange... | 03/15/1988 |
| 4720468 | Process for the production of a monolithic integrated optical device incorporating a semiconductor laser and device obtained by this process Process for the production of a monolithic integrated optical device incorporating a semiconductor laser and an optical waveguide, as well as to a device obtained by this process. The substrate is given a profile having at least one step. On said substrat... | 01/19/1988 |
| 4707219 | Integrated devices including cleaved semiconductor lasers A new technique called stop cleaving permits semiconductor lasers having etched mirrors to be fabricated on a common substrate with other optical or electronic components such as photodetectors and field-effect transistors.... | 11/17/1987 |
| 4672736 | Method for producing laser diodes with an adjusted and integrated heat sink For adjustment of heat sinks to be applied to a wafer being used to form a plurality of semiconductor diodes, a mask is applied to the wafer. Openings of the mask are offset in rows relative to one another for the electrolytic deposition of the material o... | 06/16/1987 |
| 4670966 | Method of making a semiconductor laser with end zones for reducing non-radiating recombination A semiconductor laser having mirror faces serving as resonators, in which the active laser region (2) includes end zones adjoining the mirror faces which have implanted ions, preferably protons, with associated crystal damage. The end zones have a length ... | 06/09/1987 |
| 4660275 | Method of making cleaved-coupled-cavity (C3) diode lasers A method of making an optically coupled semiconductor laser having cleaved facing end walls and precise alignment and spacing. An indium coated face of a semiconductor laser diode bar is placed on an indium coated support. A knife edge cleaves the bar int... | 04/28/1987 |
| 4476620 | Method of making a gallium nitride light-emitting diode The substrate of a gallium nitride light-emitting diode is made rough at given positions on the surface thereof, or an insulating film strip pattern is attached on the surface of the substrate prior to growing an n-type conductive gallium nitride layer an... | 10/16/1984 |
| 4380862 | Method for supplying a low resistivity electrical contact to a semiconductor laser device The invention is an improved method of fabricating a semiconductor laser which comprises bonding an electrically conducting sheet to a metallized surface of a strip of semiconductor material prior to separating the strip into one or more laser chips. The ... | 04/26/1983 |
| 4378259 | Method for producing mixed crystal wafer using special temperature control for preliminary gradient and constant layer deposition suitable for fabricating light-emitting diode A method of manufacturing a mixed crystal compound semiconductor wafer suitable for the production of LED having a high light output. Upon a monocrystalline substrate of III-V semiconductor material a base layer is epitaxially grown of the same material a... | 03/29/1983 |
| 4356210 | Method for forming a protecting film on side walls of a semiconductor device A method for forming a protecting film on the side walls of a semiconductor device having an exposed PN junction at the side walls, e.g. a semiconductor laser, involves placing the device on a substrate target made of a protecting film material. Energetic... | 10/26/1982 |
| 4342148 | Contemporaneous fabrication of double heterostructure light emitting diodes and laser diodes using liquid phase epitaxy In the manufacture of double heterostructure laser diodes using liquid phase epitaxy a source crystal precedes the laser substrate crystal through the process to ensure saturation of the various melts from which epitaxial growth is obtained. The source cr... | 08/03/1982 |
