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| Number | Title | Issue Date |
| 8168458 | Semiconductor device and method of forming bond wires and stud bumps in recessed region of peripheral area around the device for electrical interconnection to other devices A semiconductor wafer contains a plurality of semiconductor die each having a peripheral area around the die. A recessed region with angled or vertical sidewall is formed in the peripheral area. A conductive layer is formed in the recessed region. A first stud bump ... | 05/01/2012 |
| 8163579 | Method of manufacturing substrate for forming device, and method of manufacturing nitride-based semiconductor laser diode Provided is a method of manufacturing a semiconductor laser diode. The method includes the steps of: preparing a GaN substrate having an a-plane or m-plane GaN layer formed thereon; forming a plurality of laser diode structures on the GaN layer; etching the GaN subs... | 04/24/2012 |
| 8153464 | Wafer singulation process A method of singulating a semiconductor die from a wafer is provided. The method includes etching or cutting several trenches into the wafer from a front surface of the wafer, such that each trench extends along an entire side of the die; depositing a passivation la... | 04/10/2012 |
| 8148183 | Method for manufacturing semiconductor light emitting device According to one embodiment, a method for manufacturing a semiconductor light emitting device includes forming a separation groove on a major surface of a substrate. A semiconductor layer including a light emitting layer is formed on the substrate. The separation gr... | 04/03/2012 |
| 8148184 | Optical device wafer processing method An optical device wafer processing method for dividing an optical device wafer into a plurality of individual optical devices. The optical device wafer is composed of a substrate and a semiconductor layer formed on the front side of the substrate. The optical device... | 04/03/2012 |
| 8143081 | Method for dicing a diced optoelectronic semiconductor wafer A method for dicing an optoelectronic semiconductor wafer has steps of preparing an optoelectronic semiconductor wafer, laser scribing, diamond saw dicing and forming optoelectronic semiconductor dies. A product for dicing an optoelectronic semiconductor wafer has a... | 03/27/2012 |
| 8129207 | Light emitting diode having a thermal conductive substrate and method of fabricating the same Disclosed are a light emitting diode having a thermal conductive substrate and a method of fabricating the same. The light emitting diode includes a thermal conductive insulating substrate. A plurality of metal patterns are spaced apart from one another on the insul... | 03/06/2012 |
| 8110423 | Method of manufacturing semiconductor light-emitting device A method of manufacturing a semiconductor light-emitting device which includes the steps of forming a plurality of light-emitting device sections (40), having an approximately rectangular shape in plan view, on a substrate (10) in a matrix shape, formi... | 02/07/2012 |
| 8110422 | Manufacturing method of semiconductor laser element Starting point regions for cutting 8a, 8b extending along lines to cut 5a, 5b are initially formed in an object to be processed 1. The starting point regions for cutting 8b have modified re... | 02/07/2012 |
| 8105857 | Method of fabricating group-III nitride semiconductor laser device A method for fabricating a III-nitride semiconductor laser device includes: forming a substrate product having a laser structure; scribing a first surface of the substrate product to form a scribed mark, which extends along a reference line indicative of a direction... | 01/31/2012 |
| 8105856 | Method of manufacturing semiconductor device with wiring on side surface thereof Cost is reduced and reliability is improved with a BGA (Ball Grid Array) type semiconductor device which has ball-shaped conductive terminals. A first wiring is formed on an insulation film which is formed on a surface of a semiconductor die. A glass substrate is bo... | 01/31/2012 |
| 8076167 | Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device Provided are a group-III nitride semiconductor laser device with a laser cavity to enable a low threshold current on a semipolar surface of a hexagonal group-III nitride, and a method for fabricating the group-III nitride semiconductor laser device on a stable basis... | 12/13/2011 |
| 8071405 | Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device Provided is a group-III nitride semiconductor laser device with a laser cavity enabling a low threshold current, on a semipolar surface of a support base the c-axis of a hexagonal group-III nitride of which tilts toward the m-axis. In a laser structure 13, a ... | 12/06/2011 |
| 8067256 | Method of making microelectronic package using integrated heat spreader stiffener panel and microelectronic package formed according to the method A method of making a microelectronic package, and a microelectronic package made according to the method. The method includes: bonding and thermally coupling a plurality of IC dies to an IHS panel to yield a die-carrying IHS panel; mounting the die-carrying IHS pane... | 11/29/2011 |
| 8062916 | Series connected flip chip LEDs with growth substrate removed LED layers are grown over a sapphire substrate. Individual flip chip LEDs are formed by trenching or masked ion implantation. Modules containing a plurality of LEDs are diced and mounted on a submount wafer. A submount metal pattern or a metal pattern formed on the ... | 11/22/2011 |
| 8043878 | Method for manufacturing high efficiency light-emitting diodes A method for manufacturing a light-emitting device comprising the steps of cutting a light-emitting unit by a laser beam, and cleaning the light-emitting unit by an acid solution to remove by-products resulted from the laser cutting. ... | 10/25/2011 |
| 8017421 | Method of manufacturing semiconductor light emitting device Provided is a method of manufacturing semiconductor light emitting devices including: forming light emitting structures by sequentially depositing a first material layer, an active layer and a second material layer; forming the roughness pattern on a region of the b... | 09/13/2011 |
| 7951630 | Method of fabricating light emitting diode chip The present invention provides a method of fabricating a light emitting diode chip having an active layer between an N type semiconductor layer and a P type semiconductor layer. The method comprises the steps of preparing a substrate; laminating the semiconductor la... | 05/31/2011 |
| 7932111 | Substrate removal process for high light extraction LEDs A method for fabricating light emitting diode (LEDs) comprises providing a plurality of LEDs on a substrate wafer, each of which has an n-type and p-type layer of Group-III nitride material formed on a SiC substrate with the n-type layer sandwiched between the subst... | 04/26/2011 |
| 7901967 | Dicing method for semiconductor substrate A method for dicing a semiconductor substrate includes: forming a reforming layer in the substrate by irradiating a laser beam on the substrate; forming a groove on the substrate along with a cutting line; and applying a force to the substrate in order to cutting th... | 03/08/2011 |
| 7858414 | Nitride semiconductor device and manufacturing method thereof A method of manufacturing a nitride semiconductor device includes the steps of forming a groove on a surface of a first substrate by scribing, and forming a nitride semiconductor layer on the surface where the groove is formed. In addition, the method includes the s... | 12/28/2010 |
| 7851241 | Method for severing brittle material substrate and severing apparatus using the method There are provided a scribing step of performing scribing in a state in which a protective material is applied on at least one surface of a brittle material substrate, and a first scribing device that performs this scribing step. Accordingly, it is possible to form ... | 12/14/2010 |
| 7842529 | Method of manufacturing nitride semiconductor light emitting element including forming scribe lines sandwiching and removing high density dislocation sections In a method for manufacturing a III-V nitride compound semiconductor light emitting element, light emitting element regions (21) are formed in a low dislocation region on the III-V nitride compound semiconductor substrate wherein high density dislocation sect... | 11/30/2010 |
| 7829360 | Vertical indent production repair A method of nanomachining is provided. The method includes plunging a nanometer-scaled tip into a surface of a substrate at a first location in a first direction that is substantially perpendicular to the surface, thereby displacing a first portion of the substrate ... | 11/09/2010 |
| 7824941 | Method for producing an LED light source comprising a luminescence conversion element The invention describes a method for producing a light-emitting-diode (LED) light source, particularly comprising mixed-color LEDs, wherein at least a portion of primary radiation emitted by a chip is transformed by luminescence conversion. Said chip comprises a fro... | 11/02/2010 |
| 7811845 | Method for manufacturing high efficiency light-emitting diodes A method for manufacturing a light-emitting device comprising the steps of cutting a light-emitting unit by a laser beam, and cleaning the light-emitting unit by an acid solution to remove by-products resulted from the laser cutting. ... | 10/12/2010 |
| 7795060 | Lead cutter and method of fabricating semiconductor device Aimed at stably forming sheared surfaces of leads of semiconductor devices, and at raising ratio of formation of plated layers onto the sheared surfaces of the leads, a lead cutter has a die 106, and a cutting punch 110 having a cutting edge at least o... | 09/14/2010 |
| 7795059 | Method of fabricating a semiconductor light-emitting device A semiconductor light-emitting element has a laminated section which has an active layer made of a semiconductor, and first and second clad layers each being disposed to sandwich the active layer and made of a semiconductor, a pair of first high-reflection layers ea... | 09/14/2010 |
| 7754511 | Laser lift-off method The present invention discloses a laser lift-off method, which applies to lift off a transient substrate from an epitaxial layer grown on the transient substrate after a support substrate having an adhesion metal layer is bonded to the epitaxial layer. Firstly, the ... | 07/13/2010 |
| 7745244 | Pin substrate and package A semiconductor die package. Embodiments of the package can include a substrate with solid conductive pins disposed throughout. A semiconductor die can be attached to a surface of the substrate. Electrical connection to the semiconductor die can be provided by the s... | 06/29/2010 |
| 7741137 | Method of manufacturing electro-optical device A method of manufacturing a plurality of electro-optical devices by notching, dicing, and cutting a composite substrate obtained by adhering a first substrate and a second substrate which faces the first substrate with an electro-optical layer interposed therebetwee... | 06/22/2010 |
| 7727790 | Method for fabricating light emitting diodes The invention is method for fabricating light emitting diodes. A layered semiconductor structure is provided on a growth substrate. The method includes using a pulsed laser to form an interfacial layer between the layered semiconductor structure and the growth subst... | 06/01/2010 |
| 7709283 | Method of manufacturing a semiconductor device having an insulating protective film covering at least a portion of a tile-shaped element The invention provides a semiconductor device, a method of manufacturing the same, an electro-optic device and an electronic apparatus which are capable of addressing or solving a problem of mechanical mounting of a semiconductor element chip on a substrate. A semic... | 05/04/2010 |
| 7704769 | Optical device manufacturing method An optical device manufacturing method including the steps of: forming a groove with a depth corresponding to a finish thickness of the heat sink in a heat sink material at a position corresponding to an associated one of the streets sectioning the plurality of opti... | 04/27/2010 |
| 7700392 | Manufacturing method of semiconductor laser devices and manufacturing apparatus of the same The present invention is to provide a semiconductor laser device manufacturing method for realizing highly reliable semiconductor laser devices. The semiconductor laser device manufacturing method includes: cutting a wafer into bar-shaped wafers by scanning an elect... | 04/20/2010 |
| 7687292 | Light emitting diode package with metal reflective layer and method of manufacturing the same The invention relates to an LED package having a metal reflective layer for focusing and emitting light through a side of the package, and a manufacturing method of the same. The LED package includes a substrate with an electrode formed thereon, a light emitting dio... | 03/30/2010 |
| 7687291 | Laser facet passivation Methods of preparing front and back facets of a diode laser include controlling an atmosphere within a first chamber, such that an oxygen content and a water vapor content are controlled to within predetermined levels and cleaving the diode laser from a wafer within... | 03/30/2010 |
| 7682858 | Wafer processing method including formation of a deteriorated layer A wafer processing method for dividing a wafer having function elements in area sectioned by dividing lines formed on the front surface in a lattice pattern into individual chips along the dividing lines, comprising a deteriorated layer forming step for forming a de... | 03/23/2010 |
| 7648850 | Method for producing semiconductor chip A method for producing many semiconductor chips, each having a semiconductor circuit disposed on the face thereof and a die bonding film stuck to the back thereof, from a semiconductor wafer in which many rectangular regions are defined on its face by streets arrang... | 01/19/2010 |
| 7642113 | Semiconductor wafer dividing method An element is formed on the major surface of a semiconductor wafer, and a groove is formed in the back surface of the semiconductor wafer along a dicing line or chip dividing line by a mechanical or chemical method. A modified layer is formed by irradiating the groo... | 01/05/2010 |
