"Rail travel at high speeds is not possible because passengers, unable to breathe, would die of asphyxia."
Dionysius Lardner, Professor of Natural Philosophy and Astronomy at University College, London ; 1830
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 4225380 | Method of producing light emitting semiconductor display A method is provided for mass production of a monolithic light emitting semiconductor display utilizing light emitting semiconductor devices formed in a monocrystalline silicon wafer and a covering of silicon dioxide formed into lens structures for contro... | 09/30/1980 |
| 4190813 | Strip buried heterostructure laser A double heterostructure laser having a pair of opposite-conductivity-type, wide bandgap cladding layers separated by a narrower bandgap active region is characterized in that the active region includes a low-loss waveguide layer and contiguous therewith ... | 02/26/1980 |
| 4178604 | Semiconductor laser device A semiconductor laser device comprises an n-type GaAs layer, an n-type GaAlAs layer disposed on the n-type GaAs layer, a laser active layer consisting of a p-type GaAs layer disposed on the n-type GaAlAs layer, a first p-type GaAlAs layer disposed on the ... | 12/11/1979 |
| 4121177 | Semiconductor device and a method of fabricating the same A semiconductor device of a filamentary laser is fabricated by a method including the steps of forming a first GaAlAs layer on a GaAs body, forming a laser active layer of GaAs on the first GaAlAs layer, etching the first GaAlAs layer and the laser active... | 10/17/1978 |
| 4073676 | GaAs-GaAlAs semiconductor having a periodic corrugation at an interface A semiconductor device including a GaAs layer having a periodic corrugation on a surface thereof with a GaAsAl layer disposed on the periodic corrugation is formed by contacting a solution consisting of Ga, Al and As heated at a temperature of about 700°... | 02/14/1978 |
| 4045749 | Corrugation coupled twin guide laser An electrically pumped distributed feedback grating coupled diode laser having an optical cavity containing two closely spaced layers, a first of the layers is electrically pumped and the second of the layers is corrugated. Optical wavelength radiation an... | 08/30/1977 |
| 4023993 | Method of making an electrically pumped solid-state distributed feedback laser An electrically pumped, solid-state laser device having a grating or physical periodic structure in a region, or adjacent a region, of semiconductor material that functions as a light wave guide. The spacing of the perturbations of the periodic structure ... | 05/17/1977 |
| 3993963 | Heterostructure devices, a light guiding layer having contiguous zones of different thickness and bandgap and method of making same Described is a double heterostructure (DH) junction laser in which the intermediate layer in which light is guided is composed of an active and a passive zone which are disposed in tandem along the direction of light propagation. The active zone is thin a... | 11/23/1976 |
| 3948583 | Isolation of passive devices and integration with active devices in optical waveguiding circuits The comprehensive large scale integration of thin-film optical circuits is made possible by a series of related developments. The key concept is the isolation of the high index substrate, necessary to active devices, wherever it is desired to have a passi... | 04/06/1976 |