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Class 438/32 - Optical grating structure


Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Process for making a semiconductor device wherein the additional
No. of patents: 290
Last issue date: 08/30/2011


              8  
NumberTitleIssue Date
4225380Method of producing light emitting semiconductor display
A method is provided for mass production of a monolithic light emitting semiconductor display utilizing light emitting semiconductor devices formed in a monocrystalline silicon wafer and a covering of silicon dioxide formed into lens structures for contro...
09/30/1980
4190813Strip buried heterostructure laser
A double heterostructure laser having a pair of opposite-conductivity-type, wide bandgap cladding layers separated by a narrower bandgap active region is characterized in that the active region includes a low-loss waveguide layer and contiguous therewith ...
02/26/1980
4178604Semiconductor laser device
A semiconductor laser device comprises an n-type GaAs layer, an n-type GaAlAs layer disposed on the n-type GaAs layer, a laser active layer consisting of a p-type GaAs layer disposed on the n-type GaAlAs layer, a first p-type GaAlAs layer disposed on the ...
12/11/1979
4121177Semiconductor device and a method of fabricating the same
A semiconductor device of a filamentary laser is fabricated by a method including the steps of forming a first GaAlAs layer on a GaAs body, forming a laser active layer of GaAs on the first GaAlAs layer, etching the first GaAlAs layer and the laser active...
10/17/1978
4073676GaAs-GaAlAs semiconductor having a periodic corrugation at an interface
A semiconductor device including a GaAs layer having a periodic corrugation on a surface thereof with a GaAsAl layer disposed on the periodic corrugation is formed by contacting a solution consisting of Ga, Al and As heated at a temperature of about 700°...
02/14/1978
4045749Corrugation coupled twin guide laser
An electrically pumped distributed feedback grating coupled diode laser having an optical cavity containing two closely spaced layers, a first of the layers is electrically pumped and the second of the layers is corrugated. Optical wavelength radiation an...
08/30/1977
4023993Method of making an electrically pumped solid-state distributed feedback laser
An electrically pumped, solid-state laser device having a grating or physical periodic structure in a region, or adjacent a region, of semiconductor material that functions as a light wave guide. The spacing of the perturbations of the periodic structure ...
05/17/1977
3993963Heterostructure devices, a light guiding layer having contiguous zones of different thickness and bandgap and method of making same
Described is a double heterostructure (DH) junction laser in which the intermediate layer in which light is guided is composed of an active and a passive zone which are disposed in tandem along the direction of light propagation. The active zone is thin a...
11/23/1976
3948583Isolation of passive devices and integration with active devices in optical waveguiding circuits
The comprehensive large scale integration of thin-film optical circuits is made possible by a series of related developments. The key concept is the isolation of the high index substrate, necessary to active devices, wherever it is desired to have a passi...
04/06/1976
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