Did You Know...
...that two musicians were responsible for the invention of color print film? Fascinated by photography, Leopold Godowsky and Leopold Mannes worked together to produce an easy-to-use, practical color film. They worked full time as music teachers and gave concerts while experimenting during their off hours in Mannes' kitchen. Their success earned them full-time, well-paying jobs at Kodak and their efforts resulted in Kodachrome film, which was introduced in 1935.
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| Number | Title | Issue Date |
| 8124489 | Monolithic microwave integrated circuit device and method of forming the same Provided are a monolithic microwave integrated circuit device and a method for forming the same. The method includes: forming an sub-collector layer, a collector layer, a base layer, an emitter layer, and an emitter cap layer on a Heterojunction Bipolar Transistor (... | 02/28/2012 |
| 7727847 | Method for manufacturing display device A light-absorbing layer is selectively formed over an insulating surface, an insulating layer is formed over the insulating surface and the light-absorbing layer, the insulating surface, the light-absorbing layer, and the insulating layer are irradiated with laser l... | 06/01/2010 |
| 7682919 | Semiconductor process and PMOS varactor A method in the fabrication of an integrated circuit including a PMOS varactor and an npn transistor, comprises the steps of (i) simultaneously forming buried n+-doped regions (31) for the PMOS varactor and the npn transistor in a p-doped substrate... | 03/23/2010 |
| 7625803 | Memory devices, electronic systems, and methods of forming memory devices The invention includes a memory device having a capacitor in combination with a transistor. The memory device can be within a TFT construction. The capacitor is configured to provide both area and perimeter components of capacitance for capacitive enhancement. The c... | 12/01/2009 |
| 7439144 | CMOS gate structures fabricated by selective oxidation A sidewall image transfer process for forming sub-lithographic structures employs a layer of sacrificial polymer containing silicon that is deposited over a gate conductor layer and covered by a cover layer. The sacrificial polymer layer is patterned with convention... | 10/21/2008 |
| 7342276 | Method and apparatus utilizing monocrystalline insulator A semiconductor device, including: a semiconductor material; a conductive element; and a substantially monocrystalline insulator disposed between the semiconductor material and the conductive eleme... | 03/11/2008 |
| 7303968 | Semiconductor device and method having multiple subcollectors formed on a common wafer A semiconductor device and a method of fabricating a semiconductor device having multiple subcollectors which are formed in a common wafer, in order to provide multiple structures having different characteristic and frequency response are provided. The subcollectors... | 12/04/2007 |
| 7300595 | Method for filling concave portions of concavo-convex pattern and method for manufacturing magnetic recording medium A method for filling concave portions of a concavo-convex pattern by which the concave portions of the concavo-convex pattern can be filled to flatten the surface with reliability, and a method for manufacturing a magnetic recording medium by which a magnetic record... | 11/27/2007 |
| 7273788 | Ultra-thin semiconductors bonded on glass substrates A method for forming a semiconductor on insulator structure includes providing a glass substrate, providing a semiconductor wafer, and performing a bonding cut process on the semiconductor wafer and the glass substrate to provide a thin semiconductor layer bonded to... | 09/25/2007 |
| 7262428 | Strained Si/SiGe/SOI islands and processes of making same A process of making a strained silicon-on-insulator structure is disclosed. A recess is formed in a substrate to laterally isolate an active area. An undercutting etch forms a bubble recess under the active area to partially vertically isolate the active area. A the... | 08/28/2007 |
| 7247892 | Imaging array utilizing thyristor-based pixel elements An improved imaging array (and corresponding method of operation) includes a plurality of heterojunction thyristor-based pixel elements disposed within resonant cavities formed on a substrate. Each thyristor-based pixel element includes complementary n-type and p-ty... | 07/24/2007 |
| 7176098 | Semiconductor element and method for fabricating the same A heterojunction bipolar transistor comprises a collector layer, a base layer formed on the collector layer and an emitter layer formed on the base layer. The emitter layer includes a first semiconductor layer covering the entire top surface of the base layer and a ... | 02/13/2007 |
| 7170109 | Heterojunction semiconductor device with element isolation structure A technique enabling to improve element isolation characteristic of a semiconductor device is provided. An element isolation structure is provided in a semiconductor substrate in which a silicon layer, a compound semiconductor layer and a semiconductor layer are lam... | 01/30/2007 |
| 7166517 | Semiconductor device and method of manufacture thereof The present invention provides a method of manufacturing a semiconductor device which includes an amorphous semiconductor film forming treatment of supplying a starting material gas containing germanium to a semiconductor substrate, thereby forming an amorphous semi... | 01/23/2007 |
| 7153753 | Strained Si/SiGe/SOI islands and processes of making same A process of making a strained silicon-on-insulator structure is disclosed. A recess is formed in a substrate to laterally isolate an active area. An undercutting etch forms a bubble recess under the active area to partially vertically isolate the active area. A the... | 12/26/2006 |
| 7132320 | Method for manufacturing semiconductor device The present invention achieves the enhancement of a manufacturing yield factor and the reduction of manufacturing cost in a manufacturing method of a semiconductor device having a hetero junction bipolar transistor (HBT), a Schottky diode and a resistance element. T... | 11/07/2006 |
| 7115426 | Method and apparatus for addressing thickness variations of a trench floor formed in a semiconductor substrate A method for utilizing interference fringe patterns generated when milling a trench through a semiconductor substrate by a method such as FIB milling, to determine and optimize the thickness uniformity of the trench bottom. The interference fringes may be mapped and... | 10/03/2006 |
| 7049681 | Bipolar transistor device having phosphorous A Si1-xGex layer 111b functioning as the base composed of an i-Si1-xGex layer and a p+ Si1-xGex layer is formed on a collector layer 102, and a Si cap layer 111 | 05/23/2006 |
| 7037799 | Breakdown voltage adjustment for bipolar transistors Devices and methods are disclosed related to a bipolar transistor device and methods of fabrication. A top region is formed at a surface of and within a base region. The top region is formed by implanting a dopant of an opposite conductivity to that of the base regi... | 05/02/2006 |
| 7018884 | Method for a parallel production of an MOS transistor and a bipolar transistor The present invention provides a method for parallel production of an MOS transistor in an MOS area of a substrate and a bipolar transistor in a bipolar area of the substrate. The method comprises generating an MOS preparation structure in the MOS area, wherein the ... | 03/28/2006 |
| 7008854 | Silicon oxycarbide substrates for bonded silicon on insulator A method for forming a semiconductor on insulator structure includes forming a semiconductor layer on an insulating substrate, where the substrate is a different material than the semiconductor layer, and has a coefficient of thermal expansion substantially equal to... | 03/07/2006 |
| 6992338 | CMOS transistor spacers formed in a BiCMOS process According to an exemplary method in one embodiment, a transistor gate is fabricated on a substrate. Next, an etch stop layer may be deposited on the substrate. The etch stop layer may, for example, be TEOS silicon dioxide. Thereafter, a conformal layer is deposited ... | 01/31/2006 |
| 6953728 | Semiconductor device and method of manufacturing thereof This semiconductor device manufacturing method comprises the steps of: forming a thick gate oxide film (thick oxide film) in a first region of a substrate, forming a thin gate oxide film (thin oxide layer) in a second region, and then, applying oxynitridation to the... | 10/11/2005 |
| 6951790 | Method of forming select lines for NAND memory devices Methods and apparatus are provided. A NAND memory array has a select line coupled to each of a plurality of NAND strings of memory cells of the memory array. The select line has a select gate at each intersection of one of the plurality of NAND strings and the selec... | 10/04/2005 |
| 6929984 | Gettering using voids formed by surface transformation One aspect of this disclosure relates to a method for creating a gettering site in a semiconductor wafer. In various embodiments, a predetermined arrangement of a plurality of holes is formed in the semiconductor wafer through a surface of the wafer. The wafer is an... | 08/16/2005 |
| 6919615 | Semiconductor device for integrated injection logic cell and process for fabricating the same A semiconductor device for an integrated injection logic cell having a pnp bipolar transistor structure formed on a semiconductor substrate, wherein at least one layer of insulating films formed on a base region of the pnp bipolar transistor structure is comprised o... | 07/19/2005 |
| 6913981 | Method of fabricating a bipolar transistor using selective epitaxially grown SiGe base layer Embodiments of a bipolar transistor are disclosed, along with methods for making the transistor. An exemplary transistor includes a collector region in a semiconductor substrate, a base layer overlying the collector region and bound by a field oxide layer, a dielect... | 07/05/2005 |
| 6911369 | Discontinuity prevention for SiGe deposition The present disclosure provides a process for producing a SiGe layer in a bipolar device having a reduced amount of gaps or discontinuities on a shallow trench isolation (STI) region use for a base electrode connection. The process is used for forming an SiGe layer ... | 06/28/2005 |
| 6894362 | Method and apparatus for a self-aligned heterojunction bipolar transistor using dielectric assisted metal liftoff process Disclosed is a manufacturing method to fabricate Heterojunction Bipolar Transistors (HBTs) that enables self-alignment of emitter and base metal contact layers with precise sub-micron spacing using a dielectric-assisted metal lift-off process. Such an HBT process re... | 05/17/2005 |
| 6828205 | Method using wet etching to trim a critical dimension A method for using an isotropic wet etching process chemical process for trimming semiconductor feature sizes with improved critical dimension control including providing a hard mask overlying a substrate included in a semiconductor wafer said hard mask patterned fo... | 12/07/2004 |
| 6800532 | Method of manufacturing a semiconductor device comprising a bipolar transistor and a variable capacitor A variable capacitor includes an N+ layer including a variable capacitance region, a P+ layer epitaxially grown on the N+ layer and formed from a SiGe film and a Si film, and a P-type electrode. An NPN-HBT (Hetero-junction Bipolar Tr... | 10/05/2004 |
| 6784063 | Method for fabricating BiCMOS transistor The present invention discloses a method for fabricating a BiCMOS transistor, which improves the high frequency characteristics of a bipolar transistor by reducing base resistance and a parasitic capacitance between the base and collector. The method comprises the s... | 08/31/2004 |
| 6780725 | METHOD FOR FORMING A SEMICONDUCTOR DEVICE INCLUDING FORMING VERTICAL NPN AND PNP TRANSISTORS BY EXPOSING THE EPITAXIAL LAYER, FORMING A MONOCRYSTAL LAYER AND ADJUSTING THE IMPURITY CONCENTRATION IN THE EPITAXIAL LAYER A method of manufacturing vertical NPN and PNP transistors on a substrate includes forming a first oxide film, a P-polycrystal silicon film, and a second oxide film successively on N-silicon epitaxial film on the substrate. An opening is made in the first oxide film... | 08/24/2004 |
| 6767774 | Producing multi-color stable light emitting organic displays A polymer or organic light emitting display may be formed on a substrate by patterning the light emitting material using a screen printing technique. In this way, displays may be formed economically, overcoming the difficulties associated with photoprocessing light ... | 07/27/2004 |
| 6746928 | Method for opening a semiconductor region for fabricating an HBT According to one disclosed embodiment, a transistor gate is fabricated on a substrate. For example, the gate can be a polycrystalline silicon gate in a FET. Thereafter, a conformal layer is deposited over the substrate and the gate and is then etched back to form sp... | 06/08/2004 |
| 6727146 | Semiconductor device and method of manufacturing thereof This semiconductor device manufacturing method comprises the steps of: forming a thick gate oxide film (thick oxide film) in a first region of a substrate, forming a thin gate oxide film (thin oxide layer) in a second region, and then, applying oxynitridation to the... | 04/27/2004 |
| 6723476 | Methods of patterning materials; and photomasks The invention includes a method of patterning a mass of material. A beam of activated particles is formed proximate the mass of material, and a pattern of deposit is formed on a surface of the mass with the beam of activated particles. The mass is then etched while ... | 04/20/2004 |
| 6649458 | Method for manufacturing semiconductor device with hetero junction bipolar transistor The present invention achieves the enhancement of a manufacturing yield factor and the reduction of manufacturing cost in a manufacturing method of a semiconductor device having a hetero junction bipolar transistor (HBT), a Schottky diode and a resistance... | 11/18/2003 |
| 6645875 | Method of processing metal and method of manufacturing semiconductor device using the metal When a barrier metal disposed on a thin film resistor material is wet-etched to expose the underlying thin film resistor material as a thin film resistor, the wet etching is performed at first and second steps. The first step is performed using H2 | 11/11/2003 |
| 6624051 | Semiconductor thin film and semiconductor device After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film has f... | 09/23/2003 |
