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Class 438/309 - FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS


Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Process for forming a transistor structure which upon completion
No. of patents: 485
Last issue date: 03/06/2012


                    13  
NumberTitleIssue Date
4114254Method for manufacture of a semiconductor device
A semiconductor device and method of making the same is disclosed having a surface passivation film of a polycrystalline silicon layer containing 2 to 45 atomic percent of oxygen atoms. The polycrystalline silicon layer is locally electrically insulated by ...
09/19/1978
4105476Method of manufacturing semiconductors
Method of fabricating a high voltage (VCED = 800 volts) PNP Power Transistor by a triple diffusion technique....
08/08/1978
4081292Method of manufacturing a semi-insulating silicon layer
Silicon ions are implanted in a silicon dioxide layer on a silicon substrate so that the dioxide layer is converted into a semi-insulating layer having an improved passivation property....
03/28/1978
4053925Method and structure for controllng carrier lifetime in semiconductor devices
The device structure is a bi-polar transistor having a region of inert atoms located in the collector adjacent to the base-collector junction. Another embodiment of the invention is a complementary insulated gate field effect transistor (IGFET) structure ...
10/11/1977
3999282Method for manufacturing semiconductor devices having oxide films and the semiconductor devices manufactured thereby
A silicon crystal body having a major surface lying parallel to a {110} or {100} crystal plane is prepared. A silicon oxide film is formed on the major surface by heating the body in an atmosphere containing steam. Then, an aluminum layer is formed on the...
12/28/1976
                    13  
 
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