Class 438/308 - Radiation or energy treatment modifying properties of semiconductor regions of substrate (e.g., thermal, corpuscular, electromagnetic, etc.)

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Process for making an insulated gate field effect transistor
No. of patents: 456
Last issue date: 02/07/2012

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Number	Title	Issue Date
8110471	Semiconductor device having a round-shaped nano-wire transistor channel and method of manufacturing same A field-effect transistor (FET) with a round-shaped nano-wire channel and a method of manufacturing the FET are provided. According to the method, source and drain regions are formed on a semiconductor substrate. A plurality of preliminary channel regions is coupled...	02/07/2012
8021950	Semiconductor wafer processing method that allows device regions to be selectively annealed following back end of the line (BEOL) metal wiring layer formation Disclosed are embodiments of a semiconductor wafer processing method that allow device regions to be selectively annealed following back end of the line (BEOL) metal wiring formation without degrading wiring layer reliability. In the embodiments, a semiconductor dev...	09/20/2011
8012841	Laser annealing method and laser annealing device The energy distribution in the short-side direction of a rectangular laser beam applied to an amorphous semiconductor film (amorphous silicon film) is uniformized. It is possible to the energy distribution in the short-side direction of the rectangular laser beam by...	09/06/2011
7981752	Method of forming junction of semiconductor device The present invention relates to a method of forming junctions of a semiconductor device. According to the method of forming junctions of a semiconductor device in accordance with an aspect of the present invention, there is provided a semiconductor substrate in whi...	07/19/2011
7923339	Method of producing an epitaxial layer on semiconductor substrate and device produced with such a method The invention relates to the manufacture of an epitaxial layer, with the following steps: providing a semiconductor substrate; providing a Si—Ge layer on the semiconductor substrate, having a first depth; —providing the semiconductor substrate with a doped layer...	04/12/2011
7906402	Compensation techniques for substrate heating processes Methods for compensating for a thermal profile in a substrate heating process are provided herein. In some embodiments, a method of processing a substrate includes determining an initial thermal profile of a substrate that would result from subjecting the substrate ...	03/15/2011
7906401	Method of tuning threshold voltages of interdiffusible structures A method of tuning threshold voltages of interdiffusible structures. The method includes a step of situating an interdiffusible structure in a path of a laser and a step of illuminating the interdiffusible structure with laser energy until a desired threshold voltag...	03/15/2011
7867868	Absorber layer candidates and techniques for application The present invention generally provides an absorber layer using carbon based materials with increased and stabled thermal absorption coefficient and economical methods to produce such an absorber layer. One embodiment of the present invention provides a method for ...	01/11/2011
7867867	Methods of manufacturing semiconductor devices Methods of manufacturing a semiconductor device include forming an NMOS transistor on a semiconductor substrate, forming a first interlayer dielectric layer on the NMOS transistor, and dehydrogenating the first interlayer dielectric layer. Dehydrogenating the first ...	01/11/2011
7846803	Multiple millisecond anneals for semiconductor device fabrication A method of forming a doped region includes, in one embodiment, implanting a dopant into a region in a semiconductor substrate, recrystallizing the region by performing a first millisecond anneal, wherein the first millisecond anneal has a first temperature and a fi...	12/07/2010
7846804	Method for fabricating high tensile stress film A method and an apparatus for fabricating a high tensile stress film includes providing a substrate, forming a poly stressor on the substrate, and performing an ultra violet rapid thermal process (UVRTP) for curing the poly stressor and adjusting its tensile stress ...	12/07/2010
7829422	Integrated circuit having ultralow-K dielectric layer A device layer is configured to reduce change in stress characteristics due to subsequent processing to reduce cracking of a subsequently formed layer. The change in stress characteristics can be reduced by providing a shield layer over the device layer to protect t...	11/09/2010
7824995	SiC semiconductor device and method for manufacturing the same A SiC semiconductor device includes: a SiC substrate having a main surface; a channel region on the substrate; first and second impurity regions on upstream and downstream sides of the channel region, respectively; a gate on the channel region through a gate insulat...	11/02/2010
7816220	Laser-induced structuring of substrate surfaces In one aspect, the present invention provides a method of processing a substrate, e.g., a semiconductor substrate, by irradiating a surface of the substrate (or at least a portion of the surface) with a first set of polarized short laser pulses while exposing the su...	10/19/2010
7781294	Method for producing an integrated circuit including a semiconductor A method for producing an integrated circuit including a semiconductor is disclosed. In one embodiment, crystal defects are produced by irradiation in the material of the underlying semiconductor substrate which crystal defects form an inhomogeneous crystal defect d...	08/24/2010
7772077	Method of forming a semiconductor structure comprising a field effect transistor having a stressed channel region A method of forming a semiconductor structure comprises providing a semiconductor substrate comprising a first transistor element and a second transistor element. The first transistor element comprises at least one first amorphous region and the second transistor el...	08/10/2010
7691715	Method of fabricating oxide semiconductor device A method for fabricating a device using an oxide semiconductor, including a process of forming the oxide semiconductor on a substrate and a process of changing the conductivity of the oxide semiconductor by irradiating a predetermined region thereof with an energy r...	04/06/2010
7670917	Semiconductor device made by using a laser anneal to incorporate stress into a channel region In one aspect there is provided a method of manufacturing a semiconductor device comprising forming gate electrodes over a semiconductor substrate, forming source/drains adjacent the gate electrodes, depositing a stress inducing layer over the gate electrodes. A las...	03/02/2010
7608516	Semiconductor pixel arrays with reduced sensitivity to defects A pixel structure is described, comprising at least two selection switches coupled in series to improve the yield of the pixel. Also an array comprising such pixel structures logically organized in rows and columns is described, as well as a method for selecting a r...	10/27/2009
7575979	Method to form a film A method includes forming a fluid including an inorganic semiconductor material, depositing a layer of said fluid on a substrate to form a film, and curing said film to form a porous semiconductor film. ...	08/18/2009
7569458	Non-thermally annealed doped semiconductor material and methods related thereto A method of non-thermal annealing of a silicon wafer comprising irradiating a doped silicon wafer with electromagnetic radiation in a wavelength or frequency range coinciding with lattice phonon frequencies of the doped semiconductor material. The wafer is annealed ...	08/04/2009
7566625	Semiconductor device manufacturing method, heat treatment apparatus, and heat treatment method For manufacture of a semiconductor device using a low heat resistant substrate such as a glass substrate, a method of heat treatment for activating an impurity element that is used to dope a semiconductor film and for performing gettering on the semiconductor film i...	07/28/2009
7560354	Process of forming an electronic device including a doped semiconductor layer A process can include forming a doped semiconductor layer over a substrate. The process can also include performing an action that reduces a dopant content along an exposed surface of a workpiece that includes the substrate and the doped semiconductor layer. The act...	07/14/2009
7514333	CMOS power sensor A CMOS power sensor is disclosed in the present invention. The CMOS power sensor includes a current coil, a high voltage device circuit, and a Hall device. The current coil is fabricated during the process steps of forming gold bumps of a CMOS device. One end of the...	04/07/2009
7468304	Method of fabricating oxide semiconductor device A method for fabricating a device using an oxide semiconductor, including a process of forming the oxide semiconductor on a substrate and a process of changing the conductivity of the oxide semiconductor by irradiating a predetermined region thereof with an energy r...	12/23/2008
7442615	Semiconductor processing system and method Systems and methods are disclosed to perform semiconductor processing with a process chamber; a flash lamp adapted to be repetitively triggered; and a controller coupled to the control input of the flash lamp to trigger the flash lamp. The system can deploy a solid ...	10/28/2008
7439114	Laser anneal method of a semiconductor layer For obtaining p-Si by irradiating a laser beam to an a-Si layer to polycrystallize, an energy level in a region to be irradiated by the laser beam is set such that a level at the rear area of the region along a scan direction of the laser beam is lower than that at ...	10/21/2008
7435635	Method for crystallizing semiconductor material A semiconductor material and a method for forming the same, said semiconductor material having produced by a process comprising melting a noncrystal semiconductor film containing therein carbon, nitrogen, and oxygen each at a concentration of 5×1019 atom...	10/14/2008
7435658	Method of manufacturing metal-oxide-semiconductor transistor A method of manufacturing a MOS transistor is provided. A substrate having a gate structure thereon is provided. A first spacer is formed on the sidewall of the gate structure. A pre-amorphization implantation is carried out to amorphize a portion of the substrate. ...	10/14/2008
7422987	Method for manufacturing semiconductor device It is an object of the invention to provide a technique forming a crystalline semiconductor film whose orientation is uniform by control of crystal orientation and obtaining a crystalline semiconductor film in which concentration of an impurity is reduced. A configu...	09/09/2008
7419861	Laser irradiation apparatus, laser irradiation method, semiconductor device, and method of manufacturing a semiconductor device To form a polycrystalline silicon film having a grain size of 1 μm or greater by means of laser annealing. A beam emitted from a laser apparatus (101) is split in two by a half mirror. The split beams are processed into linear shapes by cylindrical lenses (	09/02/2008
7419860	Method of fabricating a semiconductor thin film A crystalline semiconductor having an even surface and a large crystal grain size is formed on an economical glass substrate using a laser crystallizing technology. A series of processes, including forming an insulation film on a glass substrate; forming a semicondu...	09/02/2008
7410878	Polysilicon film having smooth surface and method of forming the same A method of forming a polysilicon film having smooth surface using a lateral growth and a step-and-repeat laser process. Amorphous silicon formed in a first irradiation region of a substrate is crystallized to form a first polysilicon region by a first laser shot. T...	08/12/2008
7381598	Insulated gate semiconductor device and process for fabricating the same A thin film transistor of reversed stagger type having improved characteristics and yet obtained by a simple process, which is fabricated by selectively doping the semiconductor region on the gate dielectric to form the source, drain, and channel forming regions by ...	06/03/2008
7368416	Methods of removing metal-containing materials Various methods for selectively etching metal-containing materials (such as, for example, metal nitrides, which can include, for example, titanium nitride) relative to one or more of silicon, silicon dioxide, silicon nitride, and doped silicon oxides in high aspect ...	05/06/2008
7365410	Semiconductor structure having a metallic buffer layer and method for forming A method for forming a semiconductor structure including providing a semiconductor substrate, forming a metallic buffer layer over the semiconductor substrate, forming an amorphous semiconductor layer over the metallic buffer layer, and recrystallizing the amorphous...	04/29/2008
7362784	Laser irradiation method, laser irradiation apparatus, and semiconductor device An object of the present invention is obtaining a semiconductor film with uniform characteristics by improving irradiation variations of the semiconductor film. The irradiation variations are generated due to scanning while irradiating with a linear laser beam of th...	04/22/2008
7361566	Method of forming poly-silicon thin film transistors A method of forming poly-silicon thin film transistors is described. An amorphous silicon thin film transistor is formed on a substrate, and then the Infrared (IR) heating process is used. A gate metal and source/drain metal are heated rapidly, and conduct heat ener...	04/22/2008
7354857	Method of making iron silicide and method of making photoelectric transducer A solar cell comprises a substrate, and a metal electrode layer, a p-i-n junction, and a transparent electrode layer which are successively laminated on the substrate. The p-i-n junction comprises an n layer, an i layer, and a p layer which are laminated in this ord...	04/08/2008
7351638	Scanning laser thermal annealing A method of manufacturing a semiconductor device includes forming a gate electrode over a substrate, implanting dopants into the substrate and activating the dopants using laser thermal annealing. During annealing, the laser and substrate are moved relative to one a...	04/01/2008

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Class 438/308 - Radiation or energy treatment modifying properties of semiconductor regions of substrate (e.g., thermal, corpuscular, electromagnetic, etc.)