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| Number | Title | Issue Date |
| 4046607 | Method of manufacturing a semiconductor device A silicon layer is deposited over the insulating layer covering the surface of the semiconductor substrate and apertured to define a contact window through which the silicon layer is connected with a one-conductivity-type region formed in the semiconducto... | 09/06/1977 |
| 4013489 | Process for forming a low resistance interconnect in MOS N-channel silicon gate integrated circuit A low resistance crossunder (interconnect) for n-channel, silicon gate integrated circuits, particularly useful where shallow source and drain regions are employed. The crossunder is formed in the substrate from a doped polycrystalline silicon layer which... | 03/22/1977 |
| 3997367 | Method for making transistors Submicron plasma trimming of a patterened resist material is combined with ion implantation techniques to achieve submicron control of lateral doping profiles. This makes possible the high-yield fabrication of, for example, bipolar microwave transitors of... | 12/14/1976 |
| 3967364 | Method of manufacturing semiconductor devices A method of manufacturing a MOSIC comprises the steps of forming a diffused layer selectively in one principal plane of a semiconductor substrate, forming a first insulating film on the substrate, forming a first wiring layer after providing holes in the ... | 07/06/1976 |
| 3936857 | Insulated gate field effect transistor having high transconductance An insulated gate field effect transistor having improved high-frequency operating characteristics includes an extended region electrically connected to one of the source and drain regions and spaced from the surface of the substrate. The extended region ... | 02/03/1976 |
