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| Number | Title | Issue Date |
| 8183068 | Nitride-based semiconductor light emitting device and method of manufacturing the same A nitride-based semiconductor light emitting device having an improved structure in which light extraction efficiency is improved and a method of manufacturing the same are provided. The nitride-based semiconductor light emitting device comprises an n-clad layer, an... | 05/22/2012 |
| 8183067 | Method for manufacturing display device including laser irradiation and selective removing of a light absorber layer A display device which can be manufactured with improved material use efficiency and through a simplified manufacturing process, and a manufacturing technique thereof. A light-absorbing layer is formed, an insulating layer is formed over the light-absorbing layer, t... | 05/22/2012 |
| 8183069 | Method of manufacturing organic light emitting display device A method of manufacturing an organic light emitting display device includes providing a substrate, the substrate including a first electrode on which a first photosensitive layer is formed, a second electrode on which a second photosensitive layer is formed, and an ... | 05/22/2012 |
| 8178373 | Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III... | 05/15/2012 |
| 8168456 | Vertical cavity surface emitting laser with undoped top mirror A VCSEL with undoped top mirror. The VCSEL is formed from an epitaxial structure deposited on a substrate. A doped bottom mirror is formed on the substrate. An active layer that includes quantum wells is formed on the bottom mirror. A periodically doped conduction l... | 05/01/2012 |
| 8153460 | Surface mount optoelectronic component with lens having protruding structure The invention relates to a surface mount optoelectronic component with a lens attachment, the method for precising the lens position and the method to manufacture the whole component. ... | 04/10/2012 |
| 8153459 | Organic light emitting diode display and fabricating method thereof An organic light emitting diode display device includes a switch TFT and a drive TFT formed on a substrate; an overcoat layer formed on the TFTs; a drain contact hole exposing portions of a drain electrode of the drive TFT by removing portions of the overcoat layer;... | 04/10/2012 |
| 8153461 | Light-emitting diode apparatus and manufacturing method thereof A light-emitting diode (LED) apparatus includes a thermoconductive substrate, a thermoconductive adhesive layer, an epitaxial layer, a current spreading layer and a micro- or nano-roughing structure. The thermoconductive adhesive layer is disposed on the thermocondu... | 04/10/2012 |
| 8153458 | Image sensing devices and methods for fabricating the same Image sensing devices and methods for fabricating the same are provided. An exemplary image sensing device comprises a first substrate having a first side and a second side opposing each other. A plurality of image sensing elements is formed in the first substrate a... | 04/10/2012 |
| 8148181 | Method for manufacturing flat display device A flat display device is provided. The flat display device a substrate divided into an active region for displaying an image and a peripheral region that does not display the image, and includes: a gate line that crosses a data line to define a pixel region in the a... | 04/03/2012 |
| 8138001 | Semiconductor light-emitting device and method for producing semiconductor light-emitting device The present invention provides a semiconductor light-emitting device that includes a compound semiconductor layer formed by laminating a first clad layer, a light-emitting layer and a second clad layer, a plurality of first ohmic electrodes formed on the first clad ... | 03/20/2012 |
| 8105855 | Method of manufacturing light emitting device A method of manufacturing a light emitting device is provided which requires low cost, is easy, and has high throughput. The method of manufacturing a light emitting device is characterized in that: a solution containing a light emitting material is ejected to an an... | 01/31/2012 |
| 8101443 | LEDs using single crystalline phosphor and methods of fabricating same Methods for fabricating LED chips from a wafer and devices fabricated using the methods with one method comprising depositing LED epitaxial layers on an LED growth wafer to form a plurality of LEDs on the growth wafer. A single crystalline phosphor is bonded over at... | 01/24/2012 |
| 8101442 | Method for manufacturing EL display device A manufacture process of a thin film transistor mounted on an EL display device is simplified. A thin film transistor is manufactured by stacking a first conductive film, an insulating film, a semiconductor film, an impurity semiconductor film, and a second conducti... | 01/24/2012 |
| 8097478 | Method for producing light-emitting diode The present invention provides a method for producing a light-emitting diode, the method comprising a lamination step of forming a laminated semiconductor layer by sequentially laminating an n-type semiconductor layer, a light-emitting layer and a p-type semiconduct... | 01/17/2012 |
| 8097479 | Anti-reflective film and production method thereof, and stamper for producing anti-reflective film and production method thereof In this method for producing an anti-reflective film, pores are formed on a surface of a polymer molding material to continuously change a refractive index and then reduce reflectance, in which anodic oxidized porous alumina, in which pores having a tapered shape an... | 01/17/2012 |
| 8093079 | Methods of fabricating a light-emitting device Methods of fabricating of a light-emitting device are provided, the methods include forming a plurality of light-emitting units on a substrate, measuring light characteristics of the plurality of light-emitting units, respectively, depositing a phosphor layer on the... | 01/10/2012 |
| 8076166 | Method for fabricating an optically pumped semiconductor apparatus A method for fabricating an optically pumped semiconductor apparatus, having the following steps: provision of a connection carrier assembly (50) comprising a plurality of connection carriers (14) which are permanently connected to one another mechanic... | 12/13/2011 |
| 8071402 | Anti-reflective film and production method thereof, and stamper for producing anti-reflective film and production method thereof In this method for producing an anti-reflective film, pores are formed on a surface of a polymer molding material to continuously change a refractive index and then reduce reflectance, in which anodic oxidized porous alumina, in which pores having a tapered shape an... | 12/06/2011 |
| 8071401 | Method of forming vertical structure light emitting diode with heat exhaustion structure The present invention is to provide a method of forming a vertical structure light emitting diode with a heat exhaustion structure. The method includes steps of: a) providing a sapphire substrate; b) depositing a number of protrusions on the sapphire substrate, each... | 12/06/2011 |
| 8062915 | Anti-reflective film and production method thereof, and stamper for producing anti-reflective film and production method thereof In this method for producing an anti-reflective film, pores are formed on a surface of a polymer molding material to continuously change a refractive index and then reduce reflectance, in which anodic oxidized porous alumina, in which pores having a tapered shape an... | 11/22/2011 |
| 8058083 | Method for manufacturing flexible semiconductor device It is an object of one embodiment of the preset invention to conduct separation without damaging a semiconductor element when the semiconductor element is made flexible. Further, it is another object of one embodiment of the preset invention to provide a technique f... | 11/15/2011 |
| 8058084 | Pixel structure of LCD and fabrication method thereof In this pixel structure, a metal layer/a dielectric layer/a heavily doped silicon layer constitutes a bottom electrode/a capacitor dielectric layer/a top electrode of a storage capacitor. At the same time, a metal shielding layer is formed under the thin film transi... | 11/15/2011 |
| 8053261 | Method of fabricating light emitting device A method of fabricating a light emitting device includes forming a plurality of light emitting elements on light emitting element mounting regions, respectively, of a substrate, forming lens supports on the light emitting element mounting regions, respectively, are ... | 11/08/2011 |
| 8043877 | Electro-optic integrated circuits and methods for the production thereof An electro-optic integrated circuit including an integrated circuit substrate at least one optical signal providing element and at least one discrete reflecting optical element mounted onto the integrated circuit substrate, cooperating with the at least one optical ... | 10/25/2011 |
| 8039281 | Light emitting diode having vertical topology and method of making the same An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first elect... | 10/18/2011 |
| 8039280 | Light emitting diode and method of fabricating the same The present invention provides a method of fabricating a light emitting diode, which comprises the steps of forming a compound semiconductor layer on a substrate, the compound semiconductor layer including a lower semiconductor layer, an active layer and an upper se... | 10/18/2011 |
| 8034646 | Light emitting element, light emitting device and semiconductor device It is an object of the present invention to provide a semiconductor device, in particular, a light emitting element which can be easily manufactured with a wet method. One feature of the invention is a light emitting device including a transistor and a light emittin... | 10/11/2011 |
| 8034647 | LED with substrate modifications for enhanced light extraction and method of making same The surface morphology of an LED light emitting surface is changed by applying processes, such as a reactive ion etch (RIE) process to the light emitting surface. In one embodiment, the changed surface morphology takes the form of a moth-eye surface. The surface mor... | 10/11/2011 |
| 8030104 | Method for manufacturing liquid crystal display device A method for manufacturing a liquid crystal display device is disclosed. The method includes forming a gate electrode, a gate pad, a gate line on a substrate by using a first mask; forming a gate insulating film, an active layer, an ohmic contact layer and a conduct... | 10/04/2011 |
| 8030105 | Method of fabricating a light emitting diode chip having phosphor coating layer A method of fabricating light emitting diode chips having a phosphor coating layer comprises providing a substrate having a plurality of light emitting diodes formed thereon; forming a conductive bump on at least one of the plurality of light emitting diodes; formin... | 10/04/2011 |
| 8021903 | Method for fabricating micro-lens and micro-lens integrated optoelectronic devices using selective etch of compound semiconductor Provided are a method of fabricating a microlens using selective etching of a compound semi-conductor and a method of fabricating a photoelectric device having the microlens. The formation of the microlens includes patterning a compound semiconductor layer and remov... | 09/20/2011 |
| 8017418 | Semiconductor image sensor and method for fabricating the same A semiconductor image sensor includes: a semiconductor imaging element including an imaging area, a peripheral circuit area, and an electrode area; cylindrical electrodes provided on electrode terminals so as to be electrically connected with an external device; and... | 09/13/2011 |
| 8012781 | Method for fabricating an electroluminescence device A nanocrystal electroluminescence device comprising a polymer hole transport layer, a nanocrystal light-emitting layer and an organic electron transport layer wherein the nanocrystal light-emitting layer is independently and separately formed between the polymer hol... | 09/06/2011 |
| 8012780 | Method of fabricating semiconductor laser There is provided a method of fabricating a semiconductor laser including a two-dimensional photonic crystal. The method comprises the steps of growing an InX1Ga1−X1N (0 | 09/06/2011 |
| 8012779 | Gallium nitride-based light emitting diode and method of manufacturing the same A vertical GaN-based LED comprises an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having an irregular-surface structure which includes a first irregular-surface structure having irregularities formed at even intervals and a se... | 09/06/2011 |
| 8008101 | GaN compound semiconductor light emitting element and method of manufacturing the same The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by mea... | 08/30/2011 |
| 8003418 | Method for producing group III nitride-based compound semiconductor device Provided is a method for producing a Group III nitride-based compound semiconductor light-emitting device, wherein a contact electrode is formed on an N-polar surface of an n-type layer through annealing at 350° C. or lower. In the case where, in a Group III nitrid... | 08/23/2011 |
| 8003417 | Organic electroluminescent display device and method of manufacturing the same A method of manufacturing an organic electroluminescent display device may comprise forming transistors on a substrate, forming a lower electrode over an insulating layer, forming an insulating layer on the transistors, the lower electrode being coupled to a source ... | 08/23/2011 |
| 7998768 | Method for forming a light emitting diode A method for forming a light emitting diode includes: (a) growing epitaxially an epitaxial film over an epitaxial substrate; (b) roughening an upper surface of the epitaxial film; (c) forming a top electrode on the roughened upper surface of the epitaxial film; (d) ... | 08/16/2011 |
