Class 438/265 - Oxidizing sidewall of gate electrode

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Process for making a floating gate-type field effect transistor
No. of patents: 288
Last issue date: 03/20/2012

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Number	Title	Issue Date
8138045	Method of forming sidewall spacers to reduce formation of recesses in the substrate and increase dopant retention in a semiconductor device A method of forming sidewall spacers for a gate in a semiconductor device includes depositing a gate oxide layer over a gate and source/drain regions, and using a thermal anneal to oxidize silicon of the substrate and silicon of the gate after formation of the depos...	03/20/2012
8114741	Oxygen-rich layers underlying BPSG An integrated circuit structure and a method of forming the same are provided. The method includes providing a surface; performing an ionized oxygen treatment to the surface; forming an initial layer comprising silicon oxide using first process gases comprising a fi...	02/14/2012
8071448	Semiconductor device and manufacturing method of the same A disclosed semiconductor device includes multiple gate electrodes disposed on a semiconductor substrate; and multiple sidewall spacers disposed on sidewalls of the gate electrodes. The thickness of the sidewall spacers is larger on the sidewalls along longer sides ...	12/06/2011
7932150	Lateral oxidation with high-K dielectric liner Disclosed are methods of making and using a high-K dielectric liner to facilitate the lateral oxidation of a high-K gate dielectric, integrated circuit structures containing the high-K dielectric liner and/or oxidized high-K gate dielectric, and other associated met...	04/26/2011
7811888	Method for fabricating semiconductor memory device A method of fabricating a semiconductor memory device to protect a tunneling insulating layer from etching-damage includes the steps of forming sequentially a tunnel insulating layer, a first conductive layer, a dielectric layer and a second conductive layer on a se...	10/12/2010
7799639	Methods of fabricating non-volatile memory devices including a chlorine cured tunnel oxide layer Fabrication of a nonvolatile memory device includes sequentially forming a tunnel oxide layer, a first conductive layer, and a nitride layer on a semiconductor substrate. A stacked pattern is formed from the tunnel oxide layer, the first conductive layer, and the ni...	09/21/2010
7772068	Method of manufacturing non-volatile memory A method of manufacturing a non-volatile memory including the following steps is provided. First, a dielectric layer, a first conductive layer and a patterned mask layer are sequentially formed on a substrate. A portion of the first conductive layer is removed using...	08/10/2010
7723187	Semiconductor memory device and method of manufacturing the same A salicide treatment is performed on a common source line to reduce surface resistance and contact resistance, thereby improving a cell current characteristic. Therefore, a chip can be reduced in size and chips per wafer can be increased, thereby achieving high yiel...	05/25/2010
7608509	Method of manufacturing a flash memory device having compensation members formed on edge portions of a tunnel oxide layer In a semiconductor device and a method of manufacturing the semiconductor device, preliminary isolation regions having protruded upper portions are formed on a substrate to define an active region. After an insulation layer is formed on the active region, a first co...	10/27/2009
7598140	Method of producing a semiconductor device having an oxide film A semiconductor device having excellent characteristics is provided without deteriorated film quality. A first oxide film is divided into three regions A, B and C. Lengths I, II and III of the regions A, B and C in a plane direction of the silicon substrate are set ...	10/06/2009
7592227	Methods of manufacturing a semiconductor device Example embodiments of the present invention relate to methods of manufacturing a semiconductor device. Other example embodiments of the present invention relate to methods of manufacturing a semiconductor device having a gate electrode. In the method of manufacturi...	09/22/2009
7582530	Managing floating gate-to-floating gate spacing to support scalability Formation techniques are utilized to increase the space or distance between floating gates of a memory array of floating gate transistors. In at least some embodiments, floating gates are first formed over the substrate and then portions of the floating gates are re...	09/01/2009
7494874	Method of manufacturing a flash memory device A method of manufacturing a flash memory device includes the steps of forming a tunnel oxide layer and a polysilicon layer over a semiconductor substrate. An etch process is then performed to form a pattern and a trench. An isolation layer is formed in the trench. A...	02/24/2009
7439106	Gate CD trimming beyond photolithography A semiconductor device is fabricated with a selected critical dimension. A gate dielectric layer is formed over a semiconductor body. A gate layer comprised of a conductive material, such as polysilicon, is formed over the gate dielectric layer. The gate layer is pa...	10/21/2008
7439157	Isolation trenches for memory devices A method includes removing a portion of a substrate to define an isolation trench; forming a first dielectric layer on exposed surfaces of the substrate in the trench; forming a second dielectric layer on at least the first dielectric layer, the second dielectric la...	10/21/2008
7439131	Flash memory device having resistivity measurement pattern and method of forming the same A flash memory device has a resistivity measurement pattern and method of forming the same. A trench is formed in an isolation film in a Self-Aligned Floating Gate (SAFG) scheme. The trench is buried to form a resistivity measurement floating gate. This allows the r...	10/21/2008
7413953	Method of forming floating gate array of flash memory device The method of forming a floating gate array of a flash memory device includes: (a) sequentially forming a tunnel oxide film, a floating gate forming film, a capping oxide film and a first nitride film on a semiconductor substrate with an active device region defined...	08/19/2008
7410869	Method of manufacturing a semiconductor device In a method of manufacturing a semiconductor device such as a flash memory device, an insulating pattern having an opening is formed to partially expose a surface of a substrate. A first silicon layer is formed on the exposed surface portion of the substrate and the...	08/12/2008
7402492	Method of manufacturing a memory device having improved erasing characteristics In a method of manufacturing a memory device having improved erasing characteristics, the method includes sequentially forming a tunneling oxide layer, a charge storing layer, and a blocking oxide layer on a semiconductor substrate; annealing the semiconductor subst...	07/22/2008
7371645	Method of manufacturing a field effect transistor device with recessed channel and corner gate device Fabrication of recessed channel array transistors (RCAT) with a corner gate device includes forming pockets between a semiconductor fin that includes a gate groove and neighboring shallow trench isolations that extend along longs sides of the semiconductor fin. A pr...	05/13/2008
7368348	Methods of forming MOS transistors having buried gate electrodes therein Methods of forming field effect transistors having buried gate electrodes include the steps of forming a semiconductor substrate having a sacrificial gate electrode buried beneath a surface of the semiconductor substrate and then removing the sacrificial gate electr...	05/06/2008
7364963	Method for fabricating semiconductor device A method for fabricating a semiconductor device is provided. The method includes: implanting impurities onto a substrate by performing an ion implantation process; recessing portions of the substrate to form a plurality of trenches; performing a first thermal proces...	04/29/2008
7358139	Method of forming a field effect transistor including depositing and removing insulative material effective to expose transistor gate conductive material but not transistor gate semiconductor material The invention includes methods of forming field effect transistors. In one implementation, a method of forming a field effect transistor having a gate comprising a conductive metal or metal compound received over conductively doped semiconductive material includes f...	04/15/2008
7358130	Method for monitoring lateral encroachment of spacer process on a CD SEM A process implementing steps for determining encroachment of a spacer structure in a semiconductor device having thick and thin spacer regions, including a transition region formed therebetween. The method steps comprise: obtaining a line width roughness (LWR) measu...	04/15/2008
7354824	Fabrication method of non-volatile memory A method for fabricating a non-volatile memory is provided. A dielectric layer, a first conductive layer, and a mask layer are formed sequentially on a substrate and then patterned to form a number of openings and floating gates. In addition, spacers are formed on t...	04/08/2008
7341906	Method of manufacturing sidewall spacers on a memory device, and device comprising same The present invention is generally directed to a method of manufacturing sidewall spacers on a memory device, and a memory device comprising such sidewall spacers. In one illustrative embodiment, the method includes forming sidewall spacers on a memory device compri...	03/11/2008
7332408	Isolation trenches for memory devices Methods and apparatus are provided. A first dielectric plug is formed in a portion of a trench that extends into a substrate of a memory device so that an upper surface of the first dielectric plug is recessed below an upper surface of the substrate. The first diele...	02/19/2008
7329578	Method of forming floating-gate tip for split-gate flash memory process A split-gate flash memory process for improving sharpness and height of a floating-gate tip has steps as follows. Using a dry etching process, a trench is formed in the first polysilicon layer through the pattern opening. An oxide layer is then deposited on the firs...	02/12/2008
7323743	Floating gate A floating gate and fabrication method thereof. A semiconductor substrate is provided, on which an oxide layer, a first conducting layer, and a patterned hard mask layer having an opening are sequentially formed. A spacer is formed on the sidewall of the opening. A ...	01/29/2008
7320915	Method of manufacturing flash memory device The present invention relates to a method of manufacturing a flash memory device. According to the method of manufacturing the flash memory device, a gate line is formed to have a structure in which a tunnel oxide film, a polysilicon layer for floating gate, dielect...	01/22/2008
7317222	Memory cell using a dielectric having non-uniform thickness A memory cell is programmed by injecting charge into a charge storage layer of the memory cell. A desired programmed charge results in the charge storage layer over an edge portion of a channel region of the memory cell. An undesired programmed charge results in the...	01/08/2008
7315058	Semiconductor memory device having a floating gate To prevent the extraction of electrons from the floating gate during a read operation. A semiconductor memory device comprises a selection gate 3a provided in a first region on a substrate 1 through an insulating film 2, a floating gate	01/01/2008
7303960	Method for fabricating flash memory device A method for fabricating a flash memory device including the steps of: providing a substrate having thereon a gate with therein a control gate; lining the substrate and the gate with a liner; forming a silicon layer on the liner; forming a sacrificing layer on the s...	12/04/2007
7300842	Method of fabricating a mask ROM A mask ROM and fabrication method thereof are disclosed, in which a bit line is formed of a conductive material such as polysilicon, by which a device size can be minimized, and by which resistance characteristics are enhanced. ...	11/27/2007
7297598	Process for erase improvement in a non-volatile memory device A method of making embedded non-volatile memory devices includes forming a first mask layer overlying a polycrystalline silicon layer in a cell region and a peripheral region on a semiconductor substrate wherein the first mask layer has a plurality of openings in th...	11/20/2007
7282780	Semiconductor device A capacitor having low voltage dependency and high pn junction diode reverse breakdown voltage. A first n-well is formed in the surface of a p-type silicon substrate. A second n-well is superimposed and formed in the first n-well. A gate electrode is formed along th...	10/16/2007
7276403	Selective oxidation of silicon in diode, TFT, and monolithic three dimensional memory arrays The present invention relates to use of selective oxidation to oxidize silicon in the presence of tungsten and/or tungsten nitride in memory cells and memory arrays. This technique is especially useful in monolithic three dimensional memory arrays. In one aspect of ...	10/02/2007
7271064	Method of forming a field effect transistor using conductive masking material The invention includes methods of forming field effect transistors. In one implementation, a method of forming a field effect transistor having a gate comprising a conductive metal or metal compound received over conductively doped semiconductive material includes f...	09/18/2007
7259419	Programmable memory device, integrated circuit including the programmable memory device, and method of fabricating same An integrated circuit comprises a memory device including an isolation layer for defining an active area of a substrate, a tunnel oxide layer formed on the active area, a floating gate formed over the active area and the isolation layer, an inter-gate dielectric lay...	08/21/2007
7250341	Flash memory device having poly spacers A non-volatile memory device includes a substrate having a first active region and a second active region. A first floating gate is provided over the first active region and having an edge, the first floating gate being made of a conductive material. A first spacer ...	07/31/2007

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Class 438/265 - Oxidizing sidewall of gate electrode