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| Number | Title | Issue Date |
| 8093123 | Integration methods for carbon films in two- and three-dimensional memories formed therefrom Methods of forming memory cells are disclosed which include forming a pillar above a substrate, the pillar including a steering element and a memory element, and performing one or more etches vertically through the pillar to form multiple memory cells. Memory cells ... | 01/10/2012 |
| 8039344 | Methods of forming a capacitor structure and methods of manufacturing a semiconductor device using the same In a method of forming a capacitor, a seed stopper and a sacrificial layer is formed on an insulating interlayer having a plug therethrough. An opening is formed through the sacrificial layer and the seed stopper to expose the plug. A seed is formed on an innerwall ... | 10/18/2011 |
| 7906393 | Methods for forming small-scale capacitor structures The present disclosure provides small scale capacitors (e.g., DRAM capacitors) and methods of forming such capacitors. One exemplary implementation provides a method of fabricating a capacitor that includes sequentially forming a first electrode, a dielectric layer,... | 03/15/2011 |
| 7741176 | Method for fabricating a cylindrical capacitor including implanting impurities into the upper sections of the lower electrode to prevent the formation of hemispherical grain silicon on the upper sections A method for fabricating a semiconductor device is disclosed. The semiconductor device includes a capacitor and a support insulator. The capacitor includes a cylindrical electrode. The cylindrical electrode comprises upper and lower sections. The lower section has a... | 06/22/2010 |
| 7736972 | Method for forming storage electrode of semiconductor memory device In order to form a storage electrode of a semiconductor memory device, an interlayer dielectric layer is formed on a semiconductor substrate having a bit line thereon. A contact hole exposing the semiconductor substrate is formed by patterning the interlayer dielect... | 06/15/2010 |
| 7666738 | Method for fabricating capacitor of semiconductor device The present invention relates to a method for fabricating a capacitor of a semiconductor device. The method includes the steps of: forming a first amorphous silicon layer doped with an impurity in a predetermined first doping concentration suppressing dopants from l... | 02/23/2010 |
| 7642157 | Method for enhancing electrode surface area in DRAM cell capacitors Methods for forming the lower electrode of a capacitor in a semiconductor circuit, and the capacitors formed by such methods are provided. The lower electrode is fabricated by forming a texturizing underlayer and then depositing a conductive material thereover. In o... | 01/05/2010 |
| 7504301 | Stressed field effect transistor and methods for its fabrication A stressed field effect transistor and methods for its fabrication are provided. The field effect transistor comprises a silicon substrate with a gate insulator overlying the silicon substrate. A gate electrode overlies the gate insulator and defines a channel regio... | 03/17/2009 |
| 7456065 | Fabricating method of DRAM cylindrical capacitor A method of manufacturing dynamic random access memory (DRAM) cylindrical capacitor is provided. A substrate having a polysilicon plug formed therein is provided. A dielectric layer having an opening is disposed on the substrate, wherein the opening exposes the poly... | 11/25/2008 |
| 7432152 | Methods of forming HSG layers and devices A polysilicon film is formed with enhanced selectivity by flowing chlorine during the formation of the film. The chlorine acts as an etchant to insulative areas adjacent polysilicon structures on which the film is desired to be formed. Bottom electrodes for capacito... | 10/07/2008 |
| 7427545 | Trench memory cells with buried isolation collars, and methods of fabricating same The present invention relates to semiconductor devices, preferably dynamic random access memory (DRAM) cells, each of which contains at least one trench capacitor with a buried isolation collar. The trench capacitor is located in a trench in a semiconductor substrat... | 09/23/2008 |
| 7414297 | Capacitor constructions The invention includes methods of forming rugged electrically conductive surfaces. In one method, a layer is formed across a substrate and subsequently at least partially dissociated to form gaps extending to the substrate. An electrically conductive surface is form... | 08/19/2008 |
| 7413950 | Methods of forming capacitors having storage electrodes including cylindrical conductive patterns A capacitor is provided including a storage node contact pad and a storage electrode. The storage electrode includes at least two cylindrical conductive patterns. The at least two cylindrical conductive patterns are electrically coupled to a portion of a surface of ... | 08/19/2008 |
| 7407854 | Method for fabricating capacitor of semiconductor device The present invention relates to a method for fabricating a capacitor of a semiconductor device. The method includes the steps of: forming a first amorphous silicon layer doped with an impurity in a predetermined first doping concentration suppressing dopants from l... | 08/05/2008 |
| 7405122 | Methods for fabricating a capacitor A method for forming a capacitor comprises providing a substrate. A bottom electrode material layer is formed on the substrate. A first mask layer is formed on the bottom electrode material layer. A second mask layer is formed on the first mask layer. The second mas... | 07/29/2008 |
| 7393742 | Semiconductor device having a capacitor and a fabrication method thereof In a semiconductor device having a capacitor and a method of fabricating the same, the semiconductor device comprises a semiconductor substrate and an insulating layer on the semiconductor substrate, a contact plug electrically connected to the semiconductor substra... | 07/01/2008 |
| 7387929 | Capacitor in semiconductor device and method of manufacturing the same The present invention relates to a capacitor in semiconductor device and a method of manufacturing the same, wherein, owing to formation of a lower electrode and an upper electrode into a stack structure of a poly-silicon layer and an aluminum (Al) layer and formati... | 06/17/2008 |
| 7378313 | Methods of fabricating double-sided hemispherical silicon grain electrodes and capacitor modules Methods are provided for robust and cost effective techniques to fabricate a semiconductor device having double-sided hemispherical silicon grain (HSG) electrodes for container capacitors. In an embodiment, this is accomplished by forming a layer of hemispherical si... | 05/27/2008 |
| 7374992 | Manufacturing method for an integrated semiconductor structure The present invention provides a manufacturing method for an integrated semiconductor structure comprising the steps of: providing a semiconductor substrate having a plurality of gate stacks in a memory cell region and at least one gate stack in a peripheral device ... | 05/20/2008 |
| 7371647 | Methods of forming transistors The invention encompasses a method of forming a structure over a semiconductor substrate. A silicon dioxide containing layer is formed across at least some of the substrate. Nitrogen is formed within the silicon dioxide containing layer. Substantially all of the nit... | 05/13/2008 |
| 7368343 | Low leakage MIM capacitor Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor structures ... | 05/06/2008 |
| 7368014 | Variable temperature deposition methods A deposition method may include, at a first temperature, contacting a substrate with a first precursor and chemisorbing a first layer at least one monolayer thick over the substrate. At a second temperature different from the first temperature, the first layer may b... | 05/06/2008 |
| 7368776 | Semiconductor device comprising a highly-reliable, constant capacitance capacitor A semiconductor device, having a memory cell region and a peripheral circuit region, includes an insulating film, having an upper surface, formed on a major surface of a semiconductor substrate to extend from the memory cell region to the peripheral circuit region. ... | 05/06/2008 |
| 7364968 | Capacitor in semiconductor device and manufacturing method The capacitor in a semiconductor device includes a substrate, a lower electrode formed over the substrate, a diffusion barrier formed over the lower electrode, a plurality of agglomerates formed over the diffusion barrier, a dielectric layer formed over the surface ... | 04/29/2008 |
| 7366094 | System and method for channel transport format allocation in a wireless communication system A wireless communication system and method employing channel transport format allocation in a shared uplink channel between a UE and a Node B, and wherein the UE can determine a transport format combination which it can support, by: detecting in the UE a change in t... | 04/29/2008 |
| 7361547 | Method for forming a capacitor for use in a semiconductor device A method for forming a capacitor for use in a semiconductor device having electrode plugs surrounded by an insulating film and connected to underlying contact pads, includes sequentially forming an etch stop film and a mold oxide film on the insulating film and the ... | 04/22/2008 |
| 7355234 | Semiconductor device including a stacked capacitor A stacked capacitor formed in a capacitor hole includes a bottom electrode, capacitor insulation film and a top electrode. The bottom electrode includes a plurality of islands formed on an underlying insulating film, and a metallic film covering the islands on the u... | 04/08/2008 |
| 7354848 | Poly-silicon-germanium gate stack and method for forming the same A CMOS gate stack that increases the inversion capacitance compared to a conventional CMOS gate stack has been described. Using a poly-SiGe gate, instead of the conventional poly-Si gate near the gate dielectric layer, increases the amount of implanted dopant that c... | 04/08/2008 |
| 7351654 | Semiconductor device and method for producing the same A method for producing a semiconductor device includes the steps of forming silicon crystal nuclei on a substrate, depositing first amorphous silicon, depositing second amorphous silicon, and crystallizing the first amorphous silicon and the second amorphous silicon... | 04/01/2008 |
| 7338855 | Method for fabricating semiconductor device A method for fabricating a semiconductor device is provided, wherein a large MIM capacitor including an uneven surface if formed to increase capacitance. The method includes forming a polysilicon layer on a lower metal layer by plasma-enhanced chemical vapor deposit... | 03/04/2008 |
| 7335554 | Method for fabricating semiconductor A method for fabricating a semiconductor device includes forming a first trench by etching a substrate already provided with a storage node contact (SNC) region and a bit line contact (BLC) region, forming a protection layer on sidewalls of the first trench, forming... | 02/26/2008 |
| 7332391 | Method for forming storage node contacts in semiconductor device A method for forming storage node contacts in a semiconductor device includes forming an interlayer dielectric layer on a semiconductor substrate provided with transistors; forming a hydrogen diffusion preventing layer on the interlayer dielectric layer; forming a h... | 02/19/2008 |
| 7333370 | Method to prevent bit line capacitive coupling Structures, systems and methods for memory cells utilizing trench bit lines formed within a buried layer are provided. A memory cell is formed in a triple well structure that includes a substrate, the buried layer, and an epitaxial layer. The substrate, buried layer... | 02/19/2008 |
| 7331432 | Disk brake apparatus Axial grooves 8e and circumferential groove 8f intersecting with he axial grooves are provided in a cylinder bore 8e. A fixed-side cam plate 12 has anti-rotation projections 12c, which are projected from... | 02/19/2008 |
| 7329573 | Methods of forming capacitors A method of forming a capacitor includes forming a first capacitor electrode over a semiconductor substrate. A capacitor dielectric region is formed onto the first capacitor electrode. The capacitor dielectric region has an exposed oxide containing surface. The expo... | 02/12/2008 |
| 7329576 | Double-sided container capacitors using a sacrificial layer Double-sided container capacitors are formed using sacrificial layers. A sacrificial layer is formed within a recess in a structural layer. A lower electrode is formed within the recess. The sacrificial layer is removed to create a space to allow access to the sides... | 02/12/2008 |
| 7322507 | Transducer assembly, capillary and wire bonding method using the same A transducer assembly and wire bonding method has a vibration unit for generating an ultrasonic wave. A body section is coupled to the vibration unit for transferring the ultrasonic wave. A tapered horn is coupled to the body section for transferring and concentrati... | 01/29/2008 |
| 7321148 | Capacitor constructions and rugged silicon-containing surfaces The invention encompasses a method of forming a rugged silicon-containing surface. A layer comprising amorphous silicon is provided within a reaction chamber at a first temperature. The temperature is increased to a second temperature at least 40° C. higher than th... | 01/22/2008 |
| 7312120 | Method for obtaining extreme selectivity of metal nitrides and metal oxides Methods for etching metal nitrides and metal oxides include using ultradilute HF solutions and buffered, low-pH HF solutions containing a minimal amount of the hydrofluoric acid species H2F2. The etchant can be used to selectively remove metal ... | 12/25/2007 |
| 7309627 | Method for fabricating a gate mask of a semiconductor device A nitride layer of the gate mask for the semiconductor device is deposited at a temperature higher than 750 deg. C so as to release hydrogen from the nitride layer. Alternatively, a nitride layer of the gate mask for the semiconductor device is deposited in a gas at... | 12/18/2007 |
