Did You Know...
...that Robert Adler has the dubious distinction of being the Father of the Couch Potato? Back in 1955 Adler was employed by what was then Zenith Radio Corp., where he was charged to invent something that would allow viewers to turn down the TV volume without leaving their chairs. After a series of flops (such as a wired contraption that people tripped over), Adler hit on the idea of using sound waves. Thus the Remote Control was born...
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| Number | Title | Issue Date |
| 8153486 | Method for fabricating capacitor A method for fabricating a capacitor includes forming an etch stop layer, a first isolating insulation layer, and a floating layer over a substrate including storage node contact plugs to form a resulting substrate structure; etching the floating layer, the first is... | 04/10/2012 |
| 8017475 | Process to improve high-performance capacitors in integrated MOS technologies A method of fabricating a high-performance capacitor that may be incorporated into a standard CMOS fabrication process suitable for submicron devices is described. The parameters used in the standard CMOS process may be maintained, particularly for the definition an... | 09/13/2011 |
| 7892919 | Method of forming isolation layer in semiconductor device The invention discloses a method of forming an isolation layer in a semiconductor device. The method includes providing a semiconductor substrate having a trench formed therein; forming a first insulating layer in the trench; and forming a densified second insulatin... | 02/22/2011 |
| 7892920 | Method for manufacturing semiconductor device including implanting through a hole patterned from a first photoresist an oxide and a second photoresist A method for manufacturing a semiconductor device which minimizes the line width of a pattern and allows a low temperature oxide film and a thinly formed photoresist film to serve as ion blockers when performing an ion implantation process on the semiconductor subst... | 02/22/2011 |
| 7790546 | Method for forming storage node of capacitor in semiconductor device A method for forming a capacitor in a semiconductor device comprises forming an inter-layer layer on a semi-finished substrate; etching the inter-layer insulation layer to form a plurality of first contact holes; forming a first insulation layer on sidewalls of the ... | 09/07/2010 |
| 7704828 | Method of fabricating a semiconductor device A method of fabricating a semiconductor device is provided. The method includes forming a mold for forming a storage electrode, forming sacrificial spacers at side walls of openings in the mold, forming a conductive film for a storage electrode along the inside of t... | 04/27/2010 |
| 7687344 | Method for fabricating capacitor in semiconductor device A first insulation layer is formed on a substrate structure including an inter-layer insulation layer and a storage node contact plug. The first insulation layer is etched to form a first opening exposing a portion of the storage node contact plug. The first opening... | 03/30/2010 |
| 7678646 | Semiconductor device and manufacturing method of the same To provide a semiconductor device capable of improving accuracy in finishing a hole in which a conductive plug right under a capacitor, and a manufacturing method of such a semiconductor device comprising the following steps: a step of forming first and second condu... | 03/16/2010 |
| 7666737 | Method of forming a metal-insulator-metal capacitor A method of forming a metal-insulator-metal capacitor has the following steps. A stack dielectric structure is formed by alternately depositing a plurality of second dielectric layers and a plurality of third dielectric layers. A wet etch selectivity of the second d... | 02/23/2010 |
| 7625795 | Container capacitor structure and method of formation thereof Container capacitor structure and method of construction. An etch mask and etch are used to expose portions of an exterior surface of an electrode (“bottom electrodes”) of the structure. The etch provides a recess between proximal pairs of container capacitor st... | 12/01/2009 |
| 7579235 | Container capacitor structure and method of formation thereof Disclosed is a container capacitor structure and method of constructing it. An etch mask and etch are used to expose portions of an exterior surface of electrode (“bottom electrodes”) of the container capacitor structure. The etch provides a recess between proxi... | 08/25/2009 |
| 7504300 | Method for fabricating semiconductor memory device having cylinder type storage node Disclosed is a method for fabricating a semiconductor memory device capable of preventing a bunker defect caused by a pinhole or a crack on a single metal layer used as a storage node. The method includes the steps of: forming a plurality of storage node plugs on a ... | 03/17/2009 |
| 7491606 | Semiconductor device and method for fabricating the same A method for fabricating a three dimensional type capacitor is provided. The method includes forming a first insulation layer including first contact layers over a substrate, forming a second insulation layer over the first insulation layer, forming second contact l... | 02/17/2009 |
| 7449383 | Method of manufacturing a capacitor and method of manufacturing a dynamic random access memory device using the same In a method of manufacturing a capacitor and a method of manufacturing a dynamic random access memory device, an insulating layer covering an upper portion of a conductive layer may be provided with an ozone gas so as to change the property of the upper portion of t... | 11/11/2008 |
| 7435677 | Method for fabricating semiconductor device A method for fabricating a semiconductor device includes: forming a first inter-layer insulation layer over a substrate where a plurality of first contact holes are formed; forming a conductive layer over the first inter-layer insulation layer to fill the first cont... | 10/14/2008 |
| 7435644 | Method of manufacturing capacitor of semiconductor device Provided is a method of manufacturing a capacitor of a semiconductor device, which can prevent tilting or an electrical short of a lower electrode. In the method, a mesh-type bridge insulating layer is formed above the contact plug on a mold oxide layer. The mold ox... | 10/14/2008 |
| 7416954 | Enhanced on-chip decoupling capacitors and method of making same An apparatus including a capacitor formed between metallization layers on a circuit, the capacitor including a bottom electrode coupled to a metal layer and a top electrode coupled to a metal via wherein the capacitor has a corrugated sidewall profile. A method incl... | 08/26/2008 |
| 7413951 | Stacked capacitor and method for producing stacked capacitors for dynamic memory cells A method produces stacked capacitors for dynamic memory cells, in which a number of trenches (48) are formed in the masking layer (40), each trench (48) being arranged above a respective contact plug (26) and extending from the top (42... | 08/19/2008 |
| 7411240 | Integrated circuits including spacers that extend beneath a conductive line Integrated circuit devices are fabricated by fabricating a conductive line on an insulating layer on an integrated circuit substrate. The conductive line includes a bottom adjacent the insulating layer, a top remote from the insulating layer and first and second sid... | 08/12/2008 |
| 7410866 | Method for forming storage node of capacitor in semiconductor device A method for forming a capacitor in a semiconductor device comprises forming an inter-layer layer on a semi-finished substrate; etching the inter-layer insulation layer to form a plurality of first contact holes; forming a first insulation layer on sidewalls of the ... | 08/12/2008 |
| 7402486 | Cylinder-type capacitor and storage device, and method(s) for fabricating the same A one cylinder storage device and a method for fabricating a capacitor are disclosed, realizing simplified fabrication by overexposure with a mask having a plurality of holes, in which the method includes forming a contact hole in an insulating layer on a semiconduc... | 07/22/2008 |
| 7397078 | Non-volatile semiconductor memory A non-volatile semiconductor memory comprising at least one EPROM/EEPROM memory cell that includes a floating gate transistor and a coupling capacitor, said floating gate transistor comprising a field effect transistor and a polysilicon layer, the coupling capacitor... | 07/08/2008 |
| 7393743 | Methods of forming a plurality of capacitors The invention includes methods of forming a plurality of capacitors. In one implementation, a plurality of capacitor electrode openings is formed over a substrate. Individual of the capacitor electrode openings are bounded on a first pair of opposing sides by a firs... | 07/01/2008 |
| 7393742 | Semiconductor device having a capacitor and a fabrication method thereof In a semiconductor device having a capacitor and a method of fabricating the same, the semiconductor device comprises a semiconductor substrate and an insulating layer on the semiconductor substrate, a contact plug electrically connected to the semiconductor substra... | 07/01/2008 |
| 7385240 | Storage cell capacitor compatible with high dielectric constant materials An integrated circuit structure includes a digit line and an electrode adapted to be part of a storage cell capacitor and includes a barrier layer interposed between a conductive plug and an oxidation resistant layer. An insulative layer protects sidewalls of the ba... | 06/10/2008 |
| 7374992 | Manufacturing method for an integrated semiconductor structure The present invention provides a manufacturing method for an integrated semiconductor structure comprising the steps of: providing a semiconductor substrate having a plurality of gate stacks in a memory cell region and at least one gate stack in a peripheral device ... | 05/20/2008 |
| 7371636 | Method for fabricating storage node contact hole of semiconductor device A method for fabricating a storage node contact hole of a semiconductor device includes: forming an inter-layer insulation layer over a substrate; forming a hard mask over the inter-layer insulation layer; etching the inter-layer insulation layer to form a storage n... | 05/13/2008 |
| 7364967 | Methods of forming storage capacitors for semiconductor devices Methods of forming a storage capacitor include forming an interlayer insulation layer having an opening therethrough on a semiconductor substrate, forming a contact plug in the opening, forming a molding oxide layer on the interlayer insulation layer and the contact... | 04/29/2008 |
| 7361550 | Methods of fabricating semiconductor memory devices including electrode contact structures having reduced contact resistance A semiconductor memory device includes a semiconductor substrate having an active region therein, an insulating layer on the substrate, and a lower electrode conductive pad extending through the insulating layer. The lower electrode conductive pad electrically conta... | 04/22/2008 |
| 7351597 | Fabrication method of semiconductor integrated circuit device The fabrication of a semiconductor integrated circuit device involves testing using a pushing mechanism that is constructed by forming, over the upper surface of a thin film probe, a reinforcing material having a linear expansion coefficient (thermal expansion coeff... | 04/01/2008 |
| 7348621 | Non-volatile memory cells A non-volatile memory cell and method of fabrication are provided. The non-volatile memory cell includes a substrate of a first conductivity type, a first dopant region of a second conductivity type in the substrate, a second dopant region of the first conductivity ... | 03/25/2008 |
| 7338610 | Etching method for manufacturing semiconductor device A wafer having a dielectric layer and an electrode partially protruding from the top surface of the dielectric layer is provided. The dielectric layer is etched with a chemical solution such as LAL. Prior to etching, the protruding portion of the electrode is remove... | 03/04/2008 |
| 7335552 | Electrode for thin film capacitor devices A method of forming a conductor on a substrate including steps of depositing tantalum on a glass layer of the substrate; oxidizing the tantalum; and depositing a noble metal on the oxidized tantalum to form the conductor. The method can be used to form a ferroelectr... | 02/26/2008 |
| 7335554 | Method for fabricating semiconductor A method for fabricating a semiconductor device includes forming a first trench by etching a substrate already provided with a storage node contact (SNC) region and a bit line contact (BLC) region, forming a protection layer on sidewalls of the first trench, forming... | 02/26/2008 |
| 7329574 | Methods of forming capacitor electrodes using fluorine and oxygen A method of forming a capacitor can include etching a metal-nitride layer in an environment comprising fluorine and oxygen to form a capacitor electrode. ... | 02/12/2008 |
| 7329576 | Double-sided container capacitors using a sacrificial layer Double-sided container capacitors are formed using sacrificial layers. A sacrificial layer is formed within a recess in a structural layer. A lower electrode is formed within the recess. The sacrificial layer is removed to create a space to allow access to the sides... | 02/12/2008 |
| 7311852 | Method of plasma etching low-k dielectric materials A semiconductor manufacturing process wherein a low-k dielectric layer is plasma etched with selectivity to an overlying mask layer. The etchant gas can be oxygen-free and include a fluorocarbon reactant, a nitrogen reactant and an optional carrier gas, the fluoroca... | 12/25/2007 |
| 7312118 | Semiconductor device and method of manufacturing the same Disclosed is a semiconductor device comprising a semiconductor substrate, a capacitor structure formed above the semiconductor substrate and comprising a first electrode, a second electrode provided below the first electrode, a third electrode provided below the sec... | 12/25/2007 |
| 7312131 | Method for forming multilayer electrode capacitor A method of forming a multilayer electrode capacitor is described. A trench is formed in a substrate or in an insulator layer. Two sets of conductive layers are deposited on the inner surface of the trench. The first set of conductive layers is electrically connecte... | 12/25/2007 |
| 7312130 | Methods of forming capacitor structures including L-shaped cavities Methods of forming capacitor structures may include forming an insulating layer on a substrate, forming a first capacitor electrode on the insulating layer, forming a capacitor dielectric layer on portions of the first capacitor electrode, and forming a second capac... | 12/25/2007 |
